• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.5
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• pp.235-240
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• 2013

Pure-carbon materials such as graphite, graphene, carbon nanotubes, and diamond have very high thermal conductivities. The reported thermal conductivity of graphene is in the range 3000~5000W/m-K at room temperature. Here, we developed graphene/cu foam hybrid type heat spreader to obtain higher thermal conductivity than Cu foam. Hybrid materials were characterized using optical microscopy (OM), scanning electron microscopy (SEM) and thermal conductivity measurement system; LFA (Laser Flash Analysis @ LFA 447, NETZSCH). We suggest that excellent thermal properties of graphene/cu foam hybrid structures are beneficial for all proposed electrical applications and can lead to a thermal management application.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.10
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• pp.154-160
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• 1990

System modeling for Heterodyne/Coherent Optical BFSK receiver is described and its receiver performance is evaluated. Receiver performance is deteriorated due to both shot noise and laser phase nois. Therefore, to minimize these noise impacts PLL loop natural frequency is selected optimally. For different power penalty due to phase error, required phase error variance to achieve $BER=10^{-9}$, nomalized loop power, and laser linewidth/bit rate(${\Delta\nu}s/Rb$) are derived. For 0.5dB power penalty, phase error variance=0.035(${rad^2}$), photon numbers=20.0, nomalized loop power = $3.8{\times}10^{-3}$(electron/s per herz), and ${\Delta\nu}s/Rb=5.24{\times}10^{-3}$ are obtained.

• Journal of the Korean Magnetics Society
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• v.21 no.6
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• pp.208-213
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• 2011

We calculated the EPR (electron paramagnetic resonance) line-shape function. The line-widths of a -doped single crystal was studied as a function of the temperature with 0.5 and 2 at. at a frequency of (X-band). The line-width decreases with increasing temperature, such temperature behavior of the line-width can indicate a motional narrowing of the spectrum, when impurity ions substitute for host ions in an off-center position, and thus there can be fast jumping of dipoles between several symmetrically equivalent configurations. Therefore, the present technique is considered to be more convenient to explain the resonant system as in the case of other optical transition problems.

• Journal of Information Display
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• v.13 no.2
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• pp.91-95
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• 2012

Indium phosphide (InP) quantum dots (QDs) are considered alternatives to Cd-containing QDs for application in light-emitting devices. The multishell coating with ZnSe/ZnS was shown to improve the photoluminescence quantum yield (QY) of InP QDs more strongly than the conventional ZnS shell coating. Structural proof for this system was provided by X-ray diffraction and transmission electron microscopy. QY values in the range of 50-70% along with peak widths of 45-50 nm can be routinely achieved, making the optical performance of InP/ZnSe/ZnS QDs comparable to that of Cd-based QDs. The fabrication of a working electroluminescent light-emitting device employing the reported material demonstrated the feasibility of the desired application.

• Journal of the Korean Ceramic Society
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• v.56 no.3
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• pp.298-301
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• 2019

This paper details the synthesis of α-FeOOH (goethite) rods through the reaction of iron (III) nitrate with KOH as a strong base, and shape control of the particles for use as a yellow inorganic pigment. The crystal phase of the α-FeOOH crystal with OH content according to the addition of KOH and the change in morphology were investigated. The optical properties varied with the aspect ratios, and the yellowness increased with increasing aspect ratio. However, the enhanced chromaticity characteristics reversed beyond a certain critical aspect ratio. Thus, the relative optimal aspect ratio of the α-FeOOH rods as a vivid yellow inorganic pigment was derived. The morphology and coloration of the prepared rods were investigated in detail using X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-vis spectroscopy, and CIE Lab color parameter measurements.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.403-404
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• 2007

We prepared the Al doped ZnO (AZO) thin film on polyethersulfon (PES) without any substrate heating by Facing Targets Sputtering (FTS) system. ZnO doped the content of Al 2 wt% was used and the sputtering conditions were gas pressure 1mTorr and input power 100W. The electrical, structural and optical properties of AZO thin films were investigated. To investigate the as-deposited thin film properties, we employed four-point probe, UV/VIS spectrometer, X-ray diffractometer (XRD), scanning electron microscopy (SEM), Hall Effect measurement system and Atomic Force Microscope (AFM).

• Journal of Power System Engineering
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• v.10 no.1
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• pp.46-51
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• 2006

Present study was investigated the effect of the particle of the counterface of unidirectional carbon fiber reinforced composite. The friction coefficient of composite and the specific wear rate different sliding velocity were measured for this materials. The friction track of counterface was observed by an optical microscope and scanning electron microscope. There were insignificant effects of the specific wear rate under lower Sic abrasive particle, however it showed high effect on $30{\mu}m$ abrasive particle size. There were significant effects of friction and wear behavior of the fiber direction under 0.3m/s sliding speed. Major failure mechanisms can be classified such as microfracture, plowing, microcutting, cutting and cracking.

• Journal of the Semiconductor & Display Technology
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• v.18 no.2
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• pp.53-57
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• 2019

In this study, we prepared sputtering cathode for large sputtering thin film in the facing targets sputtering(FTS) system. Before fabrication of cathode equipment, we investigated optimal magnetic flux in the sputtering cathode by using magnetic field stimulation(Comsol). According to the result of magnetic field stimulation, we manufactured the cathode. After we mounted laboratory-designed cathode on FTS system, the discharge properties were observed in vacuum condition. In addition, ITO films were deposited on glass substrate and their electrical and optical properties were investigated by various measurements (four-point probe, UV-VIS spectrometer, field emission scanning electron microscopy(FE-SEM), Hall-effect measurement).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.380-381
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• 2007

This paper reports on the deposition conditions and properties of ITO films used as electrode layer in a organic light emitting diodes on a PET substrate. The deposition technique employed was specially designed roll-to-roll sputtering. The oxide was deposited at room temperature in an argon and oxygen plasma on a transparent conducting ITO layer on a PET film. The influence of deposition parameters such as DC power, working pressure and oxygen partial pressure has been investigated, in order to obtain the best compromise between a high deposition rate and adequate electro-optical properties. Electrical and optical properties of ITO films were analyzed by Hall measurement examinations with van der pauw geometry at room temperature and UV/Vis spectrometer analysis, respectively. In addition, the structural properties and surface smoothness were measured by x-ray diffraction and scaning electron microscopy, respectively. From optimized ITO films grown by roll-to-roll sputter system, good electrical$(6.44{\times}10^{-4}\;{\Omega}-cm)$ and optical(above 86 % at 550 nm) properties were obtained. Also, the ITO films exhibited amorphous structure and very flat surface beacause of low deposition temperature.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.20-24
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• 1998

Photploymer films are widely used in printing and electronic industries, and their usage is expanding to encompass holography, data storage and data processing, optical waveguides and compact disks, etc. One of widely used photoplymerization initiator, 20chloro-hexaarylbiimidazole (o-Cl-HABI), is studied by laser flash photolysis in dichloromethane solution in the absence and presence of the visible light photosensitizing dye, 2, 5-bis[(2, 3, 6, 7 -tetrahydro- 1H, 5H -benzo [i, j,] quinolizin -1-yl) methylene]-cyclopenta-none, (JAW). In the presence of JAW, an increase in triarylimidazolyl radicals L.formation is observed in relative to the absence of JAW. The mechanism of this photosensitizing dissociation is concluded as the dissociation of the o-Cl-HABI radical anion formed by the electron transfer from excited singlet state of JAW to o-Cl-HABI. The observed formation of L.radicals exhibits a linear dependence on o-Cl-HABI concentration. The rate constant of electron transfer obtained from this dependence is equal to (1.0$\pm$0.2) x $10^9 M^{-1}s^{-1}$. No reaction between the excited triplet state of JAW and o-Cl-HABI is found.