• Korean Journal of Materials Research
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• v.34 no.3
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• pp.144-151
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• 2024

This work focuses on the fabrication of excellent magnetic structures for trapping breast cancer cells. Micromagnetic structures were patterned for trapping cancer cells by depositing 30 nm of permalloy on a silicon substrate. These structures were designed and fabricated using two fabrication techniques: electron beam lithography and laser direct writing. Two types of magnetic structures, rectangular wire and zig-zagged wire, were created on a silicon substrate. The length of each rectangular wire and each straight line of zig-zagged wire was 150 ㎛ with a range of widths from 1 to 15 ㎛ for rectangular and 1, 5, 10 and 15 ㎛ for zigzag, respectively. The magnetic structures showed good responses to the applied magnetic field despite adding layers of silicon nitride and polyethylene glycol. The results showed that Si + Si₃N₄ + PEG exhibited the best adhesion of cells to the surface, followed by Si + Py + Si₃N₄ + PEG. concentration of 5-6 with permalloy indicates that this layer affected silicon nitride in the presence of Polyethylene glycolPEG.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.934-937
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• 2005

It is not efficient and scarcely out of the question to use commercial expensive electron beam lithography system widely used for semiconductor fabrication process for the manufacturing application field of various devices in the small business scope. Then scanning electron microscope based electron beam machining system is maybe regarded as a powerful model can be used for it simply. To get a complete suite of thus proper system, proper chamber with high vacuum condition is necessarily required more than anything else to modify scanning electron microscope. In this study, special chamber unit using rotary pump and diffusion pump to obtain high vacuum degree was designed and manufactured and various evaluation tests fur recognize the vacuum characteristic were accomplished.

• Proceedings of the Optical Society of Korea Conference
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• 2009.02a
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• pp.237-238
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• 2009

• Journal of the Korean Society for Precision Engineering
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• v.24 no.4 s.193
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• pp.153-158
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• 2007

Recently nano imprint lithography to fabricate photonic crystal on polymer is preferred because of its simplicity and short process time and ease of precise manufacturing. But, the technique requires the precise mold as an imprinting tool for good replication. These molds are made of the silicon, nickel and quartz. But this is not desirable due to complex fabrication process, high cost. So, we describe a simple, precise and low cost method of fabricating PDMS stamp to make the photonic crystals. In order to fabricate the PDMS mold, we make the original pattern with designed hole array by finding the optimal electron beam writing condition. And then, we have tried to fabricate PDMS mold by the replica molding with ultrasonic vibration and pressure system. We have used the cleaning process to solve the detaching problem on the interface. Using these methods, we acquired the PDMS mold for photonic crystals with characteristics of a good replication. And the accuracy of replication shows below 1% in 440nm at diameter and in 610nm at lattice constant by dimensional analysis by SEM and AFM.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2092-2094
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• 2000

As a next generation lithography (NGL) technology for VLSI semiconductor fabrication, electron beam, ion beam, X-ray and extreme ultraviolet(EUV) are considered as possible candidates. Among these methods, EUV lithography(EUVL) is thought to be the most probable because it is easily realized by improving current optical lithography technology. In order to set EUV radiation which can be applied to EUVL, it is essential to generate very high density and high temperature plasma stably. The method using a pulse power laser and a high voltage pulse discharge is commonly used to accomplish such a high density and high temperature plasma. In this paper we review the recent trends of the EUV generation technique by high density and high temperature plasma.

• Journal of the Semiconductor & Display Technology
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• v.3 no.2
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• pp.5-9
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• 2004

Microcircuit fabrication requires precise control of impurities in tiny regions of the silicon. These regions must be interconnected to create components and VLSI circuits. The patterns to define such regions are created by lithographic processes. In order to image features smaller than 70 nm, it is necessary to employ non-optical technology (or next generation lithography: NGL). One such NGL is extreme ultra-violet lithography (EUVL). EUVL transmits the pattern on the wafer surface after reflecting ultra-violet through mask pattern. If particles exist on the blank mask, it can't transmit the accurate pattern on the wafer and decrease the reflectivity. It is important to care the blank mask. We removed the particles on the wafer using focused ion beam (FIB). During removal, FIB beam caused damage the multi layer mask and it decreased the reflectivity. The relationship between particle removal and reflectivity is examined: i) transmission electron microscope (TEM) observation after particle removal, ii) reflectivity simulation. It is found that the image mode of FIB is more effective for particle removal than spot and bar mode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.6
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• pp.515-521
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• 2003

There are now many theoretical investigations and real manufactures for numerous applications of photonic crystals (PCs) associated with photonic band gap and photonic integrated circuits. However, there are some difficulties to design and fabricate the desired pattern quality. It is not easy to satisfy accurate critical dimension (CD) for patterns with arbitrary shapes and pitch sizes aligned in various directions. In this work, we report the optimum conditions to better fabricate and design, and greatly improve pattern quality in delineating two-dimensional (2D) PCs in the nanometer range using single- step e-beam lithography system with conventional exposure mode.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1741-1744
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• 2005

The electron beam machining provides very high resolution up to nanometer scale, hence the E-Beam writing technology is rapidly growing in MEMS and nano-engineering areas. For E-Beam machining, $2^{nd}$ electron detector is required to see a machined sample at the stage. The $2^{nd}$ electron detector is composed of scintillator and photomultiplier with signal amplifier and high voltage power supplier. Since a photomultiplier tube is an extremely high-sensitivity photodetector, the signal light level to be detected is very low and therefore particular care must be exercised in shielding external light. In this paper, the design methodology of $2^{nd}$ electron detector and the image noise removal method are introduced.

• Korean Journal of Materials Research
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• v.13 no.8
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• pp.485-490
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• 2003

We have developed a new way of the constant growth technique to maintain a grating height of originally-etched V-groove of submicron gratings up to 1.5 $\mu\textrm{m}$ thickness by a low pressure metalorganic chemical vapor deposition. The constant growth technique is well performed on two kinds of submicron gratings that made by holography and electron (e)-beam lithography GaAs buffer layer grown on thermally deformed submicron gratings has an important role in recovering the deformed grating profile from sinusoidal to V-shaped by reducing mass transport effects. The thermal deformation effect on submicron gratings made by e-beam lithography is less than that on submicron gratings made by holography. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystals.

• Electronics and Telecommunications Trends
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• v.13 no.5 s.53
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• pp.38-52
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• 1998

Phase-shifting masks (PSM), optical proximity correction (OPC), off-axis illumination (OAI), annular illumination (AI)의 리소그래피 분해능 향상 기법과 deep ultraviolet photoresist의 개발 및 리소그래피의 최근 기술 동향을 요약 소개한다. DUV 리소그래피의 대안으로 관심을 끌고 있는 scattering with angular limitation projection electron-beam lithography (SCALPEL), extreme ultraviolet lithography (EUVL), X-ray lithography (XRL), ion projection lithography (IPL) 등의 새로운 리소그래피 기술들의 기본 원리와 최근 기술 동향도 소개하였다. 리소그래피는 반도체 공정에 있어서 가장 중요한 부분을 차지하기 때문에 리소그래피의 최근 기술 동향을 검토해 봄으로써 국내 리소그래피 장비 산업의 기술 개발을 위한 방향 설정에 도움이 될 것으로 생각한다.