• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1034-1037
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• 2006

We have developed a novel thin film encapsulation method for thin-cathode OLED by introducing organic (not polymer)/inorganic multiple thin films to protect device, which is shown to slow down the permeation rate of moisture and oxygen. From the stability test of devices, the projected lifetime of thin-cathode OLED device with thin film encapsulation was similarly to that with glass lid encapsulation.

• Polymer(Korea)
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• v.24 no.1
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• pp.90-96
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• 2000

Organic electroluminescent (EL) device was fabricated with Alq$_3$ as an emitting material and PDPMA ultra thin film prepared by Langmuir-Boldgett technique as a polymer hole transport layer. A stable condensed PDPMA monolayer was obtained using arachidic acid as a surface active material. The thickness and absorbance of PDPMA LB film increased line-arly with the layer numbers. The organic multilayered device consisted of ITO/PDPMA LB film (19 layers)/Alq$_3$/Al emitted green light with brightness of 2500 cd/m$^2$ at a DC 14 V Especially, the drive voltage of EL device having PDPMA LB film of 15 layers exhibited the value as low as 4 V. The effects of thickness control and molecular orientation in the PDPMA LB film on EL performance were discussed.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.11
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• pp.44-51
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• 1995

Homogeneous, compositionally graded, and superlattice-like silicon oxynitride(SiON) dielectric layers, with the refractive index varying from 1.46 to 2.05 as a function of film thickness, were grown by computer-controlled plasma-enhanced chemical vapor deposition (PECVD) using silane, nitrogen, and nitrous oxide reactant gases. An antireflection(AR) coating and thin-film electroluminescent(TFEL) devices with multiple dielectrics were designed and fabricated using real time control of reactant gases of the PECVD system.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.11a
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• pp.168-168
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• 1999

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.05a
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• pp.128-128
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• 1998

• Journal of Information Display
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• v.7 no.4
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• pp.9-12
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• 2006

This paper reports the synthesis and electroluminescent properties of new aromatic compounds as hole-transporting materials based on phenothiazine, such as 1,4-diphenothiazyl-benzene [DPtzB], 1,4-diphenothiazyl-xylene [DPtzX] and 9,10-diphenothiazyl-anthracene [DPtzA]. DPtzB thin film exhibited photoluminescence (PL) maximum emission peak and emission shoulder at 450 and 475 nm, and a maximum emission at 447 nm without emission shoulder was obtained in DPtzX thin film. When DPtzA was excited by incident light of 359 nm, DPtzA showed strong PL emission at 417 nm and weak emission at 600 nm. Luminance efficiency of DPtzB, DPtzX and DPtzA-based electroluminescence (EL) devices was 3.57, 3.46 and 0.47 cd/A, and power efficiency of DPtzB, DPtzX and DPtzA-based EL devices was 1.48, 1.26 and 0.201 m/W.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.1
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• pp.29-33
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• 2002

The SrS:Cu, Ag thin film electroluminescient devices were fabricated on $AlTiO_3$/ITO/glass substrates by electron-beam evaporation. The emission spectrum of the device was about 460 nm with $\chi$=0.20, y=0.29 in the CIE color coordinator. It was found that the emission spectrum was saturated to pure blue color when Ag sensitizer was doped in SrS:CuCl phosphors. The luminance of the device was increased by increasing the sulfur pressure. The measured luminance was saturated with 430 cd/$m^2$at the applied voltage of 90 V and the maximum luminance was 580 cd/$m^2$at 110V. The polarization charge and conduction charge of the devices were found to be found to be about $3.5\mu$C/$\textrm{cm}^2$ and $7.4\mu$C/$\textrm{cm}^2$, respectively.

• Journal of the Korean Applied Science and Technology
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• v.15 no.4
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• pp.21-25
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• 1998

Organic-based electroluminescent devices have attracted lots of interests because of their possible application as a large-area flat panel display. Polyimides have been used for photo-alignment in LCD(Liquid Crystal Display). However, the devices used in this study were fabricated with polyimide doped with N,N'-Diphenyl-N,N'-di(m-tolyl)-benzidine(TPD) (3, 10, 30wt%) for electroluminescent hole tranforting layer(EHTL). The photochemical and physical properties of EHTL was studied. The film thicknesses were reduced under illumination with UV light. Polyimide films doped with TPD(3wt%) was irradiated and the electrical properties of the films were studied.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.351-354
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• 2001

We fabricated organic electroluminescent(EL) devices with mixed emitting layer of poly (N- vinylcarbazole) ( PVK) , 2,5-bis (5-tert-butyl -2- benzoxaBoly) thiophene ( BBOT) , N,N-diphenyl-N,N- (3-methyphenyl) -1,1-biphenyl-4, 4-thiamine(TPD) and poly(3-hexylthiophene) (P3HT) deposited by LB(Langumuir-Boldgett) method. From the AFM(atomic force microscope) images, the monolayer containing 30% of AA(arachidic acid) showed a roughness value of 28$\AA$. In the voltage-current characteristics of ITO/Emitting layer/BBOT/LiF/A1 devices, current density much smaller than that of the spin-coated devices having a same thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.602-605
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• 1999

We dried emitting layer of EL device at 30, 80, I20 and $150^{\circ}C$ for Ihr to investigate the effects to the emission characteristics of devices. PL intensity of P3HT thin film decreased with increasing the drying temperature. But, the EL intensity and stability of device with emitting layer dried at $150^{\circ}C$ were the best. We think it s because of absence of water and remaining solvent in P3HT emitting layer. So, We suggest that the drying temperature of emitting layer of EL device should be select slightly low temperature than its glass transition temperature.