• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1034-1037
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• 2006

We have developed a novel thin film encapsulation method for thin-cathode OLED by introducing organic (not polymer)/inorganic multiple thin films to protect device, which is shown to slow down the permeation rate of moisture and oxygen. From the stability test of devices, the projected lifetime of thin-cathode OLED device with thin film encapsulation was similarly to that with glass lid encapsulation.

• 폴리머
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• 제24권1호
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• pp.90-96
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• 2000

고분자 정공 전달체로 LB 기법에 의해 제조한 PDPMA 초박막과 발광층으로 Alq$_3$를 사용하여 유기 발광소자를 제작하였다. 표면활성제로 arachidic acid를 사용하여 안정한 PDPMA 단분자막을 얻을 수 있었다. PDPMA LB 필름의 두께와 320nm의 최대 흡광도는 층수의 증가에 따라 거의 선형적으로 증가하였다. ITO/PDPMA LB 필름(19층)/Alq$_3$/Al으로 구성된 유기 적층형 소자는 DC 14V에서 2500 cd/m$^2$의 높은 휘도를 갖는 녹색 빛을 발광하였다. 특히 PDPMA LB 필름의 층이 15로 이루어진 발광소자의 구동전압은 4V의 매우 낮은 값을 나타내었다. PDPMA LB 필름의 두께 조절 및 분자 배향에 따른 EL 성능에 미치는 영향에 관하여도 검토하였다.

• 전자공학회논문지A
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• 제32A권11호
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• pp.44-51
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• 1995

Homogeneous, compositionally graded, and superlattice-like silicon oxynitride(SiON) dielectric layers, with the refractive index varying from 1.46 to 2.05 as a function of film thickness, were grown by computer-controlled plasma-enhanced chemical vapor deposition (PECVD) using silane, nitrogen, and nitrous oxide reactant gases. An antireflection(AR) coating and thin-film electroluminescent(TFEL) devices with multiple dielectrics were designed and fabricated using real time control of reactant gases of the PECVD system.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1999년도 추계학술발표강연 및 논문개요집
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• pp.168-168
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• 1999

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 한국재료학회 춘계학술발표강연 및 논문개요집
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• pp.128-128
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• 1998

• Journal of Information Display
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• 제7권4호
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• pp.9-12
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• 2006

This paper reports the synthesis and electroluminescent properties of new aromatic compounds as hole-transporting materials based on phenothiazine, such as 1,4-diphenothiazyl-benzene [DPtzB], 1,4-diphenothiazyl-xylene [DPtzX] and 9,10-diphenothiazyl-anthracene [DPtzA]. DPtzB thin film exhibited photoluminescence (PL) maximum emission peak and emission shoulder at 450 and 475 nm, and a maximum emission at 447 nm without emission shoulder was obtained in DPtzX thin film. When DPtzA was excited by incident light of 359 nm, DPtzA showed strong PL emission at 417 nm and weak emission at 600 nm. Luminance efficiency of DPtzB, DPtzX and DPtzA-based electroluminescence (EL) devices was 3.57, 3.46 and 0.47 cd/A, and power efficiency of DPtzB, DPtzX and DPtzA-based EL devices was 1.48, 1.26 and 0.201 m/W.

• 마이크로전자및패키징학회지
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• 제9권1호
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• pp.29-33
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• 2002

The SrS:Cu, Ag thin film electroluminescient devices were fabricated on $AlTiO_3$/ITO/glass substrates by electron-beam evaporation. The emission spectrum of the device was about 460 nm with $\chi$=0.20, y=0.29 in the CIE color coordinator. It was found that the emission spectrum was saturated to pure blue color when Ag sensitizer was doped in SrS:CuCl phosphors. The luminance of the device was increased by increasing the sulfur pressure. The measured luminance was saturated with 430 cd/$m^2$at the applied voltage of 90 V and the maximum luminance was 580 cd/$m^2$at 110V. The polarization charge and conduction charge of the devices were found to be found to be about $3.5\mu$C/$\textrm{cm}^2$ and $7.4\mu$C/$\textrm{cm}^2$, respectively.

• 한국응용과학기술학회지
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• 제15권4호
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• pp.21-25
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• 1998

Organic-based electroluminescent devices have attracted lots of interests because of their possible application as a large-area flat panel display. Polyimides have been used for photo-alignment in LCD(Liquid Crystal Display). However, the devices used in this study were fabricated with polyimide doped with N,N'-Diphenyl-N,N'-di(m-tolyl)-benzidine(TPD) (3, 10, 30wt%) for electroluminescent hole tranforting layer(EHTL). The photochemical and physical properties of EHTL was studied. The film thicknesses were reduced under illumination with UV light. Polyimide films doped with TPD(3wt%) was irradiated and the electrical properties of the films were studied.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.351-354
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• 2001

We fabricated organic electroluminescent(EL) devices with mixed emitting layer of poly (N- vinylcarbazole) ( PVK) , 2,5-bis (5-tert-butyl -2- benzoxaBoly) thiophene ( BBOT) , N,N-diphenyl-N,N- (3-methyphenyl) -1,1-biphenyl-4, 4-thiamine(TPD) and poly(3-hexylthiophene) (P3HT) deposited by LB(Langumuir-Boldgett) method. From the AFM(atomic force microscope) images, the monolayer containing 30% of AA(arachidic acid) showed a roughness value of 28$\AA$. In the voltage-current characteristics of ITO/Emitting layer/BBOT/LiF/A1 devices, current density much smaller than that of the spin-coated devices having a same thickness.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.602-605
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• 1999

We dried emitting layer of EL device at 30, 80, I20 and $150^{\circ}C$ for Ihr to investigate the effects to the emission characteristics of devices. PL intensity of P3HT thin film decreased with increasing the drying temperature. But, the EL intensity and stability of device with emitting layer dried at $150^{\circ}C$ were the best. We think it s because of absence of water and remaining solvent in P3HT emitting layer. So, We suggest that the drying temperature of emitting layer of EL device should be select slightly low temperature than its glass transition temperature.