• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.775-778
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• 2009

Novel blue host material, 4,4'-(dinaphthalen-2-yl)-1,1'-binaphthyl (DNBN), was designed and synthesized for OLEDs. In order to test the electroluminescent properties of DNBN, DNBN was used as the host materials for a blue emitter, PCVtPh. The device exhibited deep-blue emission with the CIEx,y coordinates (x=0.15, y=0.08) at 8.0 V, a luminous efficiency of 1.66 cd/A, a power efficiency of 0.77 lm/W and an external quantum efficiency of 2.30 % at 20 mA/$cm^2$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.116-119
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• 1997

In this paper A double-layer organic electroluminescent(EL) device was fabricated using a TPD(N,N'-dipheny] -N,N'-bis(3-methylphenyl)-[1,1'-biphenyl]-4.4'-diamine: aromatic diamine), as a hole-transport material and tris (8-hydroxy quinolinate) aluminum(Alq$_3$) as a an emiting material and its performance characteristics were investigated. structure of devices is ITO/TPD/Alq$_3$/Al. we have fabricated hole transport layer of two types. Doping material of Hole Transport material is Poly(methyl methacrylate)(PMMA) and PEI(Poly-Ether-Imide). Carrier injection from the electrodes to the doped PMMA and PEI layer through the dopants and concomitant electroluminescence from Alq$_3$were observed. Green emission with luminance of 40cd/m$^2$was achieved at a drive voltage of 30V

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.73-74
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• 2006

New iridium complexes that have carbonyl group were synthesized and demonstrated various red light emission in organic light-emitting diodes (OLEDs). The maximum luminance of $57000{\sim}15300\;cd/m^2$ at 15 V and the luminance efficiency of 22.8~5.6 cd/A at $20\;mA/cm^2$ were achieved respectively. The peak wavelength of the electroluminescence were at 570~604 nm and the device also showed a stable color chromaticity with various voltages.

• 한국재료학회지
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• 제15권7호
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• pp.448-452
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• 2005

This study was based on organic electroluminescence display. Especially, TPD and $\alpha-NPD$ for the hole transport materials were synthesized by Ullmann reaction. This reaction was conducted between 3­methylphenylamine, 1-naphthylamine and 4,4'-diiodobiphenyl in toluene containing CuCl catalyst and KOH base. The structural property of reaction products were analyzed by FT-IR, $^1H-NMR$ spectroscopy, and thermal stability, reactivity and PL property were analyzed by melting point, yield and emission spectrum, respectively. The photoluminescence spectra of a pure TPD and $\alpha-NPD$ were observed at approximately 416nm and 438nm respectively. In this study, it was known that the melting point, yield, PL properties of TPD and $\alpha-NPD$ were changed by substituent group of amines.

• Current Applied Physics
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• 제18권11호
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• pp.1415-1421
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• 2018

Unlike ordinary organic field-effect transistors (OFETs), saturation current is hardly to be found in vertical OFETs (VOFETs). Moreover, the fabrication process of patterned sourced for VOFETs is quite complex. In this current work, a simple solution processed VOFET with directly deposited intermediate silver source electrode has been demonstrated. The VOFET exhibits a high leakage current that induces an inversion polarity of its transistor behavior. Interestingly, a well-defined saturation current was observed in the linear scale of transfer characteristic. The VOFET operated with high-current density > $280mA/cm^2$ at $V_d=5V$. Overview potential of the fabricated device in display application is also presented. This preliminary work does open-up a new direction in VOFET fabrication and their application.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1343-1346
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• 2005

Self assembled monolayers (SAM) are generally used at the anode/organic interface to enhance the carrier injection in organic light emitting devices, which improves the electroluminescence performance of organic devices. This paper reports the use of SAM of 1-decanethiol (H-S(CH2)9CH3) at the cathode/organic interface to enhance the electron injection process for organic light emitting devices. Aluminum (Al), tris-(8-hydroxyquionoline) aluminum (Alq3), N,N'-diphenyl-N,N'-bis(3 -methylphenyl)-1,1'- diphenyl-4,4'-diamine (TPD) and indium-tin-oxide (ITO) were used as bottom cathode, an emitting layer (EML), a hole-transporting layer (HTL) and a top anode, respectively. The results of the capacitancevoltage (C-V), current density -voltage (J-V) and brightness-voltage (B-V), luminance and quantum efficiency measurements show a considerable improvement of the device performance. The dipole moment associated with the SAM layer decreases the electron schottky barrier between the Al and the organic interface, which enhances the electron injection into the organic layer from Al cathode and a considerable improvement of the device performance is observed. The turn-on voltage of the fabricated device with SAM layer was reduced by 6V, the brightness of the device was increased by 5 times and the external quantum efficiency is increased by 0.051%.

• 한국광학회지
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• 제3권2호
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• pp.111-116
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• 1992

이중절연층구조 ZnS:Sm,F 박막 EL 소자를 전자선 가열 증착법으로 제작하여 제작한 소자들의 발광특성과 발광효율을 조사하였다. ZnS:Sm,F 박막 EL소자의 발광 스펙트럼은 Sm/sup 3+/ 이온의 /sup 4/G/sub 5/2/ .rarw. /sup 6/H/sub 9/2//sup 4/G/sub 5/2/.rarw./sup 6/H/sub 7/2/, /sup 4/G/sub 5/2/.rarw./sup 6/H/sub 5/2/.rarw.전이에 의한 발광이다. 이들 중 650nm를 발광하는 /sup 4/G/sub 5/2/.rarw./sup 6/H/sub 9/2/전이가 가장 우세하며 주홍색 발광을 한다. ZnS:Sm, F 박막 EL 소자의 최적 농도와 기판온도는 1wt%, 200.deg.C이며 최적조건으로 제작한 소자의 발광효율이 가장 크다.

• Korean Chemical Engineering Research
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• 제51권5호
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• pp.634-639
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• 2013

유기발광다이오드(Organic Light-Emitting Diodes, OLEDs)의 효율을 향상시키기 위하여 다양한 아세트산금속(Macetate, M: Li, Na, K, Cs)을 cathode underlayer 소재로 사용하고 이들이 소자의 전자주입 및 발광 특성에 미치는 영향에 대하여 연구하였다. 1 nm 두께의 M-acetate 층을 cathode underlayer로 사용한 경우 Cs-acetate를 사용한 소자를 제외한 모든 소자에서 기존의 LiF 전자주입층을 사용한 소자보다 효율적인 전자주입 및 향상된 발광특성을 보였으며, M-acetate에 포함된 금속의 일함수가 작을수록 높은 전류밀도와 우수한 발광특성을 보였다. 또한, cathode underlayer의 두께가 소자의 특성에 미치는 영향을 분석한 결과, 사용된 M-acetate의 분자크기에 따라 각기 다른 두께(Li-acetate 0.7 nm, Cs-acetate 2.0 nm)에서 최적의 발광특성을 보였으며 기존의 LiF 층을 사용한 소자에 비하여 동일 인가전압에서 전류효율이 약 60% 향상된 결과를 얻을 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.65-65
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• 2015

In this talk, I will introduce two topics. The first topic is the polymer light emitting diodes (PLEDs) using graphene oxide quantum dots as emissive center. More specifically, the energy transfer mechanism as well as the origin of white electroluminescence in the PLED were investigated. The second topic is the facile synthesis of eco-friendly III-V colloidal quantum dots and their application to light emitting diodes. Polymer (organic) light emitting diodes (PLEDs) using quantum dots (QDs) as emissive materials have received much attention as promising components for next-generation displays. Despite their outstanding properties, toxic and hazardous nature of QDs is a serious impediment to their use in future eco-friendly opto-electronic device applications. Owing to the desires to develop new types of nanomaterial without health and environmental effects but with strong opto-electrical properties similar to QDs, graphene quantum dots (GQDs) have attracted great interest as promising luminophores. However, the origin of electroluminescence (EL) from GQDs incorporated PLEDs is unclear. Herein, we synthesized graphene oxide quantum dots (GOQDs) using a modified hydrothermal deoxidization method and characterized the PLED performance using GOQDs blended poly(N-vinyl carbazole) (PVK) as emissive layer. Simple device structure was used to reveal the origin of EL by excluding the contribution of and contamination from other layers. The energy transfer and interaction between the PVK host and GOQDs guest were investigated using steady-state PL, time-correlated single photon counting (TCSPC) and density functional theory (DFT) calculations. Experiments revealed that white EL emission from the PLED originated from the hybridized GOQD-PVK complex emission with the contributions from the individual GOQDs and PVK emissions. (Sci Rep., 5, 11032, 2015). New III-V colloidal quantum dots (CQDs) were synthesized using the hot-injection method and the QD-light emitting diodes (QLEDs) using these CQDs as emissive layer were demonstrated for the first time. The band gaps of the III-V CQDs were varied by varying the metal fraction and by particle size control. The X-ray absorption fine structure (XAFS) results show that the crystal states of the III-V CQDs consist of multi-phase states; multi-peak photoluminescence (PL) resulted from these multi-phase states. Inverted structured QLED shows green EL emission and a maximum luminance of ~45 cd/m2. This result shows that III-V CQDs can be a good substitute for conventional cadmium-containing CQDs in various opto-electronic applications, e.g., eco-friendly displays. (Un-published results).

• 한국재료학회지
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• 제18권7호
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• pp.347-351
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• 2008

We have fabricated and evaluated newNew high high-efficiency green green-light light-emitting phosphorescent devices with an emission layer of [$TCTA/TCTA_{1/3}TAZ_{2/3}/TAZ$] : $Ir(ppy)_3$ were fabricated and evaluated, and compared the electroluminescence characteristics of these devices were compared with the conventional phosphorescent devices with emission layers of ($TCTA_{1/3}TAZ_{2/3}$) : $Ir(ppy)_3$ and (TCTA/TAZ) : $Ir(ppy)_3$. The current density, luminance, and current efficiency of the a device with an emission layer of ($80{\AA}-TCTA/90^{\circ}{\AA}-TCTA_{1/3}TAZ_{2/3}/130{\AA}-TAZ$) : 10%-$Ir(ppy)_3$ were $95\;mA/cm^2$, $25000\;cd/m^2$, and 27 cd/A at an applied voltage of 10 V, respectively. The maximum current efficiency was 52 cd/A under the a luminance value of $400\;cd/m^2$. The peak wavelength and FWHM (FWHM (full width at half maximum) in the electroluminescence spectral were 513 nm and 65 nm, respectively. The color coordinate was (0.30, 0.62) on the CIE (Commission Internationale de I'Eclairage) chart. Under the a luminance of $15000\;cd/m^2$, the current efficiency of the a device with an emission layer of ($80{\AA}-TCTA/90{\AA}-TCTA_{1/3}TAZ_{2/3}/130{\AA}-TAZ$) : 10%-$Ir(ppy)_3$ was 34 cd/A, which has beenshowed an improvement of improved 1.7 and 1.4 times compared to those of the devices with emission layers of ($300{\AA}-TCTA_{1/3}TAZ_{2/3}$) : 10%-$Ir(ppy)_3$ and ($100{\AA}-TCTA/200{\AA}$-TAZ) : 10%-$Ir(ppy)_3$, respectively.