• Korean Chemical Engineering Research
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• 제43권4호
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• pp.495-502
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• 2005

무전해 도금 용액을 이용하여 구리를 직접 텅스텐(Tungsten, W) 기판 위에 도금하였다. 도금 용액의 농도는 각각 $CuSO_4$ 7.615 g/L, EDTA 10.258 g/L, glyoxylic acid 7 g/L로 하였다. 도금 용액의 pH는 11.0에서 12.8까지 변화시켰으며, 용액의 온도는 $60^{\circ}C$로 유지하였다. 도금된 필름의 특성을 조사하기 위하여 X선 회절분석기, 전계 방출 주사 전자 현미경, 주사형 원자력 현미경, X선 광전자 분석기 및 Rutherford backscattering spectroscope(RBS)를 사용하였다. 구리 도금을 위한 가장 좋은 pH 조건은 11.8이였다. 이 용액에서 10분 동안 도금한 경우 둥근 모양의 구리 입자가 균일하게 도금되었으며, 불순물 peak이 없는 순수 구리 peak이였고, 근평균 제곱 표면 거칠기는 약 11 nm가 되었다. 또한, pH 11.8에서 12분 동안 도금한 필름의 두께는 140 nm이었고 도금속도는 약 12 nm/min였다. 무전해 도금 용액의 pH를 12.8로 증가시키면 도금된 구리 필름은 Cu peak 이외에 불순물 peak인 $Cu_2O$가 나타나고 구리 입자 모양도 기다란 직사각형 모양으로 변하였다. 순수 구리의 도금을 위해서는 도금 용액에서 적당한 pH를 유지하여야 한다. 도금된 구리의 농도는 RBS로 측정한 결과 99 atom％였다. 또한, Cu/W 필름은 전기 도금하는 동안 합금 형태를 이루기 때문에 접착성도 좋았다.

• 한국세라믹학회지
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• 제45권4호
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• pp.191-195
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• 2008

Highly ordered silver nanowire with a diameter of 10 nm was arrayed by electroless deposition in a porous anodic aluminum oxide(AAO) membrane. The AAO membrane was fabricated electrochemically in an oxalic acid solution via a two-step anodization process, while growth of the silver nanowire was initiated by using electroless deposition at the long-range-ordered nanochannels of the AAO membrane followed by thermal reduction of a silver nitrate aqueous solution by increasing the temperature up to $350^{\circ}C$ for an hour. An additional electro-chemical procedure was applied after the two-step anodization to control the pore size and channel density of AAO, which enabled us to fabricate highly-ordered silver nanowire on a large scale. Electroless deposition of silver nitrate aqueous solution into the AAO membrane and thermal reduction of silver nanowires was performed by increasing the temperature up to $350^{\circ}C$ for 1 h. The morphologies of silver nanowires arrayed in the AAO membrane were investigated using SEM. The chemical composition and crystalline structure were confirmed by XRD and EDX. The electroless-deposited silver nanowires in AAO revealed a well-crystallized self-ordered array with a width of 10 nm.

• 한국표면공학회지
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• 제43권2호
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• pp.111-120
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• 2010

In this study, the effects of multi-complex agents addition on characteristics of electroless Ni plating solution are investigated. The species and the concentration of complexing agents are major factors to control the deposition rate, P concentration, and surface morphology of plating films. Adipic acid increases the deposition rate in regardless of single- or mutli-complex agent addition. However, lactic acid effectively increases the deposition rate in case of multi-addition as the complex agents with adipic or sodium succinate acid. In addition, sodium citric acid and malic acid show good stabilizing effects of plating solution and lowering the deposition rate, because they have high complexibility. Therefore, it is suggested that the development of Ni-P plating solution suitable for diverse usages can be carried out systematically using the database from this study.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.25.2-25.2
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• 2011

Recently, thin film capacitors used for vehicle inverters are small size, high capacitance, fast response, and large capacitance. But its applications were made up of liquid as electrolyte, so its capacitors are limited to low operating temperature range and the polarity. This research proposes using Ni-P alloys by electroless plating as the electrode instead of liquid electrode. Our substrate has a high aspect ratio and complicated shape because of anodic aluminum oxide (AAO). We used AAO because film thickness and effective surface area are depended on for high capacitance. As the metal electrode instead of electrolyte is injected into AAO, the film capacitor has advantages high voltage, wide operating temperature, and excellent frequency property. However, thin film capacitor made by electroless-plated Ni on AAO for full-filling into etched tunnel was limited from optimizing the deposition process so as to prevent open-through pore structures at the electroless plating owing to complicated morphological structure. In this paper, the electroless plating parameters are controlled by temperature in electroless Ni plating for reducing reaction rate. The Electrical properties with I-V and capacitance density were measured. By using nickel electrode, the capacitance density for the etched and Ni electroless plated films was 100 nFcm-2 while that for a film without any etch tunnel was 12.5 nFcm-2. Breakdown voltage and leakage current are improved, as the properties of metal deposition by electroless plating. The synthesized final nanostructures were characterized by scanning electron microscopy (SEM).

• 대한전자공학회논문지
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• 제24권2호
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• pp.238-241
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• 1987

ITO thin film was prepared by the electroless deposition technique. ITO thin film had a high transmittance in the visible region and a high reflectance in the near infrared region. The energy gap of the thn film (Sn/Im=0.1) was 4.05 eV, the carrier concentration was 2x10**21 cm**-3, and the electric resistivity was 1.5x10**-3 ohm-cm. We confirmed that ITO thin film was a degenerated n-type semiconductor.

• 한국재료학회지
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• 제24권11호
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• pp.632-638
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• 2014

We investigated the effects of DMAB (Borane dimethylamine complex, C2H10BN) in electroless Ni-B film with addition of DMAB as reducing agent for electroless Ni plating. The electroless Ni-B films were formed by electroless plating of near neutral pH (pH 6.5 and pH 7) at $50^{\circ}C$. The electroless plated Ni-B films were coated on screen printed Ag pattern/PET (polyethylene terephthalate). According to the increase of DMAB (from 0 to 1 mole), the deposition rate and the grain size of electroless Ni-B film increased and the boron (B) content also increased. In crystallinity of electroless Ni-B films, an amorphization reaction was enhanced in the formation of Ni-B film with an increasing content of DMAB; the Ni-B film with < 1 B at.% had a weak fcc structure with a nano crystalline size, and the Ni-B films with > 5 B at.% had an amorphous structure. In addition, the Ni-B film was selectively grown on the printed Ag paste layer without damage to the PET surface. From this result, we concluded that formation of electroless Ni-B film is possible by a neutral process (~green process) at a low temperature of $50^{\circ}C$.

• 한국표면공학회지
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• 제55권2호
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• pp.102-119
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• 2022

Gold plating is used as a coating of connecter in printed circuit boards, ceramic integrated circuit packages, semiconductor devices and so on, because the film has excellent electric conductivity, solderability and chemical properties such as durability to acid and other chemicals. As increasing the demand for miniaturization of printed circuit boards and downsizing of electronic devices, several types of electroless gold plating solutions have been developed. Most of these conventional gold plating solutions contain cyanide compounds as a complexing agent. The gold film obtained from such baths usually satisfies the requirements for electronic parts mentioned above. However, cyanide bath is highly toxic and it always has some possibility to cause serious problems in working environment or other administrative aspects. The object of this investigation was to develop a cyanide-free electroless gold plating process that assures the high stability of the solution and gives the excellent solderability of the deposited film. The investigation reported herein is intended to establish plating bath composition and plating conditions for electroless gold plating, with thiomalic acid as a complexing agent. At the same time, we have investigated the solution stability against nickel ion and pull strength of solder ball. Furthermore, by examining the characteristics of the plated Au plating film, the problems of the newly developed electroless Au plating solution were improved and the applicability to various industrial fields was examined. New type electroless gold-plating bath which containing thiomalic acid as a complexing agent showing so good solution stability and film properties as cyanide bath. And this bath shows the excellent stability even if the dissolved nickel ion was added from under coated nickel film, which can be used at the neutral pH range.

• Korean Chemical Engineering Research
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• 제47권2호
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• pp.141-149
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• 2009

초고속 연산용 CMOS(complementary Metal Oxide Semiconductor) 배선재료로 사용되고 있는 구리(Cu)가, 기가급 메모리 소자용 금속 배선 물질에도 사용이 시작되면서 구리 박막에 대한 재료 및 공정이 새로운 조명을 받고 있다. 반도체 금속 배선에 사용하는 수 nm 두께의 구리 박막의 형성에 전해도금(electrodeposition)과 무전해 도금(electroless deposition) 같은 전기화학적 방법을 이용하게 되어서 표면 처리, 전해액 조성과 같은 중요한 요소에 대한 최신 연구 동향을 요약하였다. 구리 박막에서 구리 배선을 제작하여야 하므로 새로운 패턴 기술인 상감기법이 도입되어, 구리도금과 상감기법과의 공정 일치성 관점에서 전해도금과 무전해 도금의 요소 기술에 대해 기술하였다. 구리보다 비저항이 낮아 차세대 소자용 배선에 있어서 적용이 예상되는 은(Ag)을 전기화학적 방법으로 금속 배선에 적용하는 최신 연구에 대하여도 소개하였다.

• Bulletin of the Korean Chemical Society
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• 제35권3호
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• pp.743-748
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• 2014

In this work, we describe a very simple electroless deposition method to prepare moderate-SERS-active nanostructured Pd films deposited on the glass substrates. To the best of our knowledge, this is the first report on the one-pot electroless method to deposit Pd nanostructures on the glass substrates. This method only requires the incubation of negatively charged glass substrates in ethanol-water mixture solutions of $Pd(NO_3)_2$ and butylamine at elevated temperatures. Pd films are then formed exclusively and evenly on glass substrates. Due to the aggregated structures of Pd, the SERS spectra of benzenethiol and organic isonitrile could be clearly identified using the Pd-coated glass as a SERS substrate. This one-step fabrication method of Pd thin film on glass is cost-effective and suitable for the mass production.

• 한국표면공학회지
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• 제37권6호
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• pp.335-343
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• 2004

Bath stabilizers in the electroless nickel(EN) plating solution are known to prevent sudden bath decomposition and extend its lifetime. Further, every stabilizer has a different role and function in EN solution and it influences the surface structure. In this study, the effects of various stabilizers on the deposition rate, surface morphology, deposition content of phosphor and hardness were investigated.