• Journal of the Korean institute of surface engineering
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• v.24 no.2
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• pp.103-113
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• 1991

Electroless Ni-Cu-P alloy plating of Al base hard disk was performed to investigate some properties according to the change of composition. It was found that the composition of Ni and Cu in deposits changed linearly with increasing the mole ratio of NiSO4.6H2O/CuSO4.5H2O. The increase in hardness by heat - treatment was confirmed to be associated with small size grained crystallization of the amorphous deposits. Acid resistance of all deposits layer. which had been heated up to 30$0^{\circ}C$, was found to be exellent when immersed in 1N-H2SO4 solution, and it showed more superior acid resistance with decreasing Cu content and with increasing P. The resistivity of the deposits heat treated became smaller at temperature more than 50$0^{\circ}C$, and it became largerly with increasing P content. Cu 44.1wt% alloy(C bath) showed the most superior non-magnetically stable characteristics after heat treatment. It was superiorly with higher temperature and with decreasing P content.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.4
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• pp.27-36
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• 2007

In this study, we investigated the interfacial reactions between various Sn-Ag-Cu(SAC) solder alloys and ENIG(Electroless Ni Immersion Gold) and Cu-OSP(Organic Solderability Preservative) pad finish. In the case of the interfacial reaction between Sb added SAC solder and ENlf thinner P-rich Ni layer was formed at the interface. In the case of the interfacial reaction between Ni added SAC solder and Cu-OSP, the uniform $Cu_6Sn_5$, intermetallic compounds(IMCs) were formed and $Cu_6Sn_5$ grain did not grow after multiple reflows. Thinner $Cu_3Sn$ IMCs were farmed at the interface between $Cu_6Sn_5$ and Cu-OSP after $150^{\circ}C$ thermal aging.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.3
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• pp.27-33
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• 2008

With increasing use of portable appliances such as PDA and cellular phone, changing environment of applications requires higher solder joint reliability. The ENIG (Electroless Nickel Immersion Gold) process has been widely used for fine pitch SMT (Surface Mount Technology) and BGA (Ball Grid Array) packaged devices due to its benefits including excellent solderability, high uniformity and substantial legibility throughout the packaging process. Its brittle fracture of solder, however, has received increasingly attentions. It was Down that fracture brittleness is mainly related with black pad resulting from galvanic nickel corrosion and P-enriched layer formation between the IMC (Intermetallic Compounds) and electroless nickel layer. Theoretically, smooth electroless Ni layer was blown to have a advantages in minimizing the black pad phenomenon by uniform solution exchange during immersion gold plating. Nevertheless, how to control the surface morphology of electroless Ni layer has been hardly blown. This study investigates an effect of surface morphology of Cu underlayer on surface morphology of electroless Ni layer. To obtain various kinds of surface morphology of Cu layer, two types of Cu etching chemical and a number of Cu etching treatment were applied.

• Journal of Power System Engineering
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• v.8 no.3
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• pp.36-43
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• 2004

The effect of bath composition, plating condition and plating rate on the magnetic property of electroless Co-Cu-P deposits were investigated. With increasing $CuCl_2$ concentration in the bath, plating rate increased, while the Br value of deposit decreased sharply. Deposited surface were inferiority by the increase pH above 10.5, bath temperature higher than $80^{\circ}C$. Plating reaction had been ceased by the increase of pH above 11, bath temperature higher than $90^{\circ}C$ and under $40^{\circ}C$. The Br value of deposit was uniform with various concentration of complexing agent(sodium citrate) in the bath. The Br value of deposit was almost equal to that found by the addition of stabilizer (thiourea) and accelerator(NaF). The Br value of deposit was uniform in plating time(20min) and heat treatment temperature(below $200^{\circ}C$), and were confirmed to have adequate bath stability for practical use.

• Korean Journal of Materials Research
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• v.28 no.10
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• pp.601-609
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• 2018

To study the effects of graphite shape and the composite fabricating method on the mechanical properties of graphite/copper (Gr/Cu) composites, a copper composite using graphite flakes or graphite granules as reinforcing phases is fabricated using mechanical mixing or electroless plating method. The mechanical properties of the Gr/Cu composites are evaluated by compression tests, and the compressive strength and elongation of the Gr/Cu composites using graphite granules as a reinforcing phase are compared with those of Cu composites with graphite flakes as a reinforcing phase. The compressive yield strength or maximum strength of the Gr/Cu composites with graphite granules as a reinforcing phase is higher than that of the composites using graphite flakes as a reinforcing phase regardless of the alignment of graphite. The strength of the composite produced by the electroless plating method is higher than that of the composite material produced by the conventional mechanical mixing method regardless of the shape of the graphite. Using graphite granules as a reinforcing phase instead of graphite flakes improves the strength and elongation of the Gr/Cu composites in all directions, and reduces the difference in strength or elongation according to the direction.

• Journal of Power System Engineering
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• v.10 no.3
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• pp.58-66
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• 2006

The effect of bath composition, plating condition and plating rate on the magnetic properties of electroless Ni-Cu-P deposits were investigated. With increasing $CuSO_4$ concentration in the bath, plating rate increased, while the Br value of deposits decreased Sharply. Plating rate increased up to 34% with the addition of 200ppm of NaF and 0.8ppm of Thiourea to the bath. Plating reaction had been ceased by the increase of pH above 11.3, bath temperature higher than $90^{\circ}C$ and under $70^{\circ}C$. The Br value of deposit was uniform with various concentration of complexing agent (Sodium citrate, Ethylenediamine) in the bath. The Br value of deposit was almost equal to that found by the addition of stabilizer(Thiourea) and accelerator(NaF). The Br value of deposit was uniform in plating time(120 min) and heat treatment temperature(below $200^{\circ}C$), and were confirmed to have adequate bath stability for practical use.

• Korean Journal of Materials Research
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• v.25 no.11
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• pp.622-629
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• 2015

Cu circuits were successfully fabricated on flexible PET(polyethylene terephthalate) substrates using wettability difference and electroless plating without an etching process. The wettability of Cu plating solution on PET was controlled by oxygen plasma treatment and $SiO_x$-DLC(silicon oxide containing diamond like carbon) coating by HMDSO(hexamethyldisiloxane) plasma. With an increase of the height of the nanostructures on the PET surface with the oxygen plasma treatment time, the wettability difference between the hydrophilicity and hydrophobicity increased, which allowed the etchless formation of a Cu pattern with high peel strength by selective Cu plating. When the height of the nanostructure was more than 1400 nm (60 min oxygen plasma treatment), the reduction of the critical impalement pressure with the decreasing density of the nanostructure caused the precipitation of copper in the hydrophobic region.

• Korean Chemical Engineering Research
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• v.43 no.4
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• pp.495-502
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• 2005

Copper was plated on the tungsten substrate by use of a direct copper electroless plating. The optimum deposition conditions were found to be with a concentration of $CuSO_4$ 7.615 g/L, EDTA of 10.258 g/L, and glyoxylic acid of 7 g/L, respectively. The solution temperature was maintained at $60^{\circ}C$. The pH was varied from 11.0 to 12.8. After the deposition, the properties of the copper film were investigated with X-ray diffractometer (XRD), Field emission secondary electron microscope (FESEM), Atomic force microscope (AFM), X-ray photoelectron spectroscope (XPS), and Rutherford backscattering spectroscope (RBS). The best deposition condition was founded to be the solution pH of 11.8. In the case of 10 min deposition at the pH of 11.8, the grain shape was spherical, Cu phase was pure without impurity peak ($Cu_2O$ peak), and the surface root mean square roughness was about 11 nm. The thickness of the film turned out to be 140 nm after deposition for 12 min and the deposition rate was found to be about 12 nm/min. Increase in pH induced a formation of $Cu_2O$ phase with a long rectangular grain shape. The pH control seems to play an important role for the orientation of Cu in electroless deposition. The deposited copper concentration was 99 atomic percent according to RBS. The resulting Cu/W film yielded a good adhesive strength, because Cu/W alloy forms during electroless deposition.

• Journal of Adhesion and Interface
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• v.4 no.2
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• pp.10-20
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• 2003

This paper is relative to the electroless deposition of nickel or copper films on polyimide and polytetrafluoroethylene substrates. First, it is presented an original approach of the electroless process which consists in grafting nitrogenated functionalities on the polymer surfaces via plasma or VUV-assisted treatments operating in a nitrogen-based atmosphere ($NH_3$, $N_2$), and then in catalysing the grafted surfaces in an aqueous tin-free, Pd(+2)-based solution. Adhesion of the Pd(+2) catalytic species on polymer surfaces is explained by the formation of strong covalent bonds between these species and the grafted nitrogenated groups. Second, it is show how a fragmentation test performed in conjunction with electrical measurements can be used to characterize the practical adhesion of the electroless coatings deposited on flexible polymer substrates, and to evidence the influence of some experimental parameters (plasma treatment time and nature of the gas phase).

• Korean Chemical Engineering Research
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• v.47 no.2
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• pp.141-149
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• 2009

The Cu thin film material and process, which have been already used for metallization of CMOS(Complementary Metal Oxide Semiconductor), has been highlighted as the Cu metallization is introduced to the metallization process for giga - level memory devices. The recent progresses in the development of key elements in electrochemical processes like surface pretreatment or electrolyte composition are summarized in the paper, because the semiconductor metallization by electrochemical processes such as electrodeposition and electroless deposition controls the thickness of Cu film in a few nm scales. The technologies in electrodeposition and electroless deposition are described in the viewpoint of process compatibility between copper electrodeposition and damascene process, because a Cu metal line is fabricated from the Cu thin film. Silver metallization, which may be expected to be the next generation metallization material due to its lowest resistivity, is also introduced with its electrochemical fabrication methods.