• Proceedings of the KIEE Conference
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• 1997.07a
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• pp.303-305
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• 1997

The advantage of application polymer instead of conventional porcelain as the housing material for arrester is that light weight, shorter section length of arrester would be possible due to the use of an insulated hanger (mold compound). also, polymer arrester has very good characteristics in design versatility as well as excellent resistance to moist ingress and pollution performance. The finite element method is widely used to calculate for electromagnetic devices. In this paper, we perform the each conditional analysis of PC with an advanced graphical user interface(GUI) using the vector fields simulator. And we try to analyze electromagnetic fields through the conventional two dimensional analysis in case of high voltage contamination on the electrode of a arrester.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.481-482
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• 2006

We fabricated pentacene organic thin film transistor with good uniformity. And we extracted contact resistance in organic thin film transistors from the plot of the inverse of drain current versus channel length by extrapolating the curve to a channel length of zero, and multiplying by drain-source voltage. Extracted contact resistance is about $70K{\Omega}$ at gate-drain voltage of -20 V

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.107-108
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• 2006

In this work, we first applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. $Bi_{3.25}La_{0.75}Ti_{3}O_{12}$ (BLT) ferroelectric film was fabricated by the sol-gel method. However, there have been serious problems in CMP in terms of repeatability and defects in patterned wafer. Especially, dishing & erosion defects increase the resistance because they decrease the interconnect section area, and ultimately reduce the lifetime of the semiconductor. Cross-sections of the wafer before and after CMP were examined by Scanning electron microscope(SEM). Process characteristics of non-dishing and erosion were investigated.

• Proceedings of the Safety Management and Science Conference
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• 1999.11a
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• pp.345-354
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• 1999

A new type of capacitor named "Super Capacitor" has been developed, in which the properties of electric double layer formed at the interface of activated carbon electrode- liquid organic electrolyte is applied. This capacitor is small In size, light in weight, wide In temperature range(-25~$70^{\circ}C$), large in charge-discharge capability and good in voltage preservation. And this super capacitor is applied as a power back-up for electricity failure in volatile memory devices etc., a power source for a short time and a power source for operating actuators. At present the development of high power back-up types of the capacitor system and improvement of their characteristics are being actively conducted in order to find wider applications.lications.

• Solar Energy
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• v.19 no.1
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• pp.29-36
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• 1999

ZnO/n-Si junctions were fabricated by spin coating with ZnO precursor produced by the sol-gel process. In order to increase the electrical conductivity of ZnO films, the films were n-doped with Al impurity and subsequently annealed at about $450^{\circ}C$ under reducing environments. The ohmic contacts between n-Si and AI for a bottom electrode were successfully fabricated by doping the rear surface of Si substrate with phosphorous atoms. The front surface of the substrate was also doped with phosphorous atoms for improving the efficiency of the solar cells. Consequently, conversion efficiencies ranging up to about 5.3% were obtained. These efficiencies were found to decrease slowly with time because of the oxide films formed at the ZnO/Si interface upon oxygen penetration through the porous ZnO. Oxygen barrier layers could be necessary in order to prevent the reduction of conversion efficiencies.

• Vacuum Magazine
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• v.2 no.2
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• pp.12-16
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• 2015

Organic photovoltaics (OPVs) have attracted significant interest in an interdisciplinary research field for the decades as a next-generation photovoltaic device due to their unique advantages. One of requirements for OPVs having high power conversion efficiency is the favorable energy level alignment between the electrode/organic and organic/organic interfaces to manage the exciton dissociation and improve the charge transport. In this review, strategies to enhance the OPV performance by controlling the energy level alignment are discussed. The insertion of an exciton blocking layer leads to the efficient dissociation of photogenerated excitons at the donor/acceptor interface enhancing the short-circuit current density. The choice of a donor having a high ionization energy and an acceptor having a low electron affinity increases the open-circuit voltage. The insertion of an appropriate work function modifier which reduces the charge injection barrier removes the S-kink in current density-voltage characteristics of OPVs and improves the fill factor. This review would give a valuable guide to design the efficient OPV structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.137-140
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• 2001

To improve structural properties and induce higher conductivity, we have annealed emitting layer, The temperature condition was investigated by various experiment. To observe the surface morphology of emitting layer, measured the AFM and the X-ray diffraction pattern of P3HT film is shown. It is move to slightly low angles and diffraction peaks also become much sharper. After annealing of emitting layer, EL intensity and Voltage-current-luminance curve is better as compared with untreated. But PL intensity was decreased. It is known that by emission principal. After annealing of emitting layer, EL devices enhances the interface adhesion between the emissive polymer and Indium-tin-oxide electrode, which takes a critical role to improve the emitting properties of EL devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.6
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• pp.602-607
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• 2004

This paper describes the characteristics of Ru-Zr alloy gate electrodes deposited by co-sputtering. The various atomic composition was made possible by controlling sputtering power of Ru and Zr. Thermal stability was examined through 600 and 700 $^{\circ}C$ RTA annealing. Variation of oxide thickness and X-ray diffraction(XRD) pattern after annealing were employed to determine the reaction at interface. Low and relatively stable sheet resistances were observed for Ru-Zr alloy after annealing. Electrical properties of alloy film were measured from MOS capacitor and specific atomic composition of Zr and Ru was found to yield compatible work function for nMOS. Ru-Zr alloy was stable up to $700^{\circ}C$ while maintaining appropriate work function and oxide thickness.

• Bulletin of the Korean Chemical Society
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• v.17 no.8
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• pp.715-719
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• 1996

Thin films of polyaniline (PANI) salts were in situ deposited on a Pt plate during either chemical polymerization or electrochemical polymerization. The oxidation states of the salt films were controlled by the applied DC potential. AC impedance of the Pt/PANI electrode were measured in monomer-free 1 N HCl solution in order to investigate the electrodic properties of the films at the following applied DC potentials: 0, 0.45 and 0.75 V vs. SCE. Very small differences in film conductivity according to its oxidation state were observed by analysis of the impedance spectra, the reasons of which are complicated by enriched water content in the film and possible decrease in the film thickness during the measurements. The electrochemical activity of the film/solution interface varied with its oxidation state. Stability of the film in 1 N HCl solution was also evaluated by impedance and cyclic voltammetry measurements.

• Journal of the Semiconductor & Display Technology
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• v.20 no.1
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• pp.113-117
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• 2021

A composite active layer was designed based on graphene quantum dots, which is a low-dimensional structure, and a heterogeneous active layer of graphene quantum dots was applied to the interfacial defect structure to overcome the limitations. Increasing to 1.5~3.5 wt % PVP GQD, Vf changed from 2.16 ~ 2.72 V. When negative deflection is applied to the lower electrode, electrons travel through the HfOx/ITO interface. The Al + ions are reduced and the device dominates at low resistance. In addition, as the PVP GQD concentration increased, the depth of the interfacial defect decreased, and the repetition of appropriate electrical properties was confirmed through Al and HfOx/ITO. The low interfacial defects help electrophoresis of Al+ ions to the PVP GQD layer and the HfOx thin film. A local electric field increase occurred, resulting in the breakage of the conductive filament in the defect.