• 제목/요약/키워드: Electrode interface

검색결과 493건 처리시간 0.028초

$Sr_{0.8}Bi_{2.4}Ta_2O_9/Pt/Si$ 구조의 수소열처리에 의한 강유전특성 열화에 미치는 W-N/Pt 전극효과 (Effects of W-N/Pt Bottom Electrode on the Ferroelectric Degradation of $Sr_{0.8}Bi_{2.4}Ta_2O_9/Pt/Si$ Structure due to the Hydrogen Annealing)

  • 이창우
    • 마이크로전자및패키징학회지
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    • 제11권4호
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    • pp.87-91
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    • 2004
  • [ $Sr_{0.8}Bi_{2.4}Ta_2O_9(SBT)/Pt$ ] 구조에서 $350^{\circ}C$ 온도로 수소열처리에 의한 강유전특성 열화를 방지하기 위한 W-N/Pt 하부전극의 효과를 살펴보았다. 그 결과 Pt와 SBT 박막사이에 증착된 W-N박막에 의해 수소의 확산을 차단할 수 있었다. Pt 표면에서 수소원자가 화학적인 흡착이 일어나지 않음으로써 흡착된 수소가 SBT 박막내의 산소와 결합하게 됨으로써 oxygen deficiency가 발생하는 것을 막을 수 있었다. W-N 박막이 양호한 확산방지막으로 작용하여 강유전특성의 열화현상을 방지 할 수 있었다.

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Improvement of Reliability by Using Fluorine Doped Tin Oxide Electrode for Ta2O5 Based Transparent Resistive Switching Memory Devices

  • Lee, Do Yeon;Baek, Soo Jung;Ryu, Sung Yeon;Choi, Byung Joon
    • 한국신뢰성학회지:신뢰성응용연구
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    • 제16권1호
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    • pp.1-6
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    • 2016
  • Purpose: Fluorine doped tin oxide (FTO) bottom electrode for $Ta_2O_5$ based RRAM was studied to apply for transparent resistive switching memory devices owing to its superior transparency, good conductivity and chemical stability. Methods: $ITO/Ta_2O_5/FTO$ (ITF) and $ITO/Ta_2O_5/Pt$ (ITP) devices were fabricated on glass and Si substrate, respectively. UV-visible (UV-VIS) spectroscopy was used to examine transparency of the ITF device and its band gap energy was determined by conventional Tauc plot. Electrical properties, such as electroforming and voltage-induced RS characteristics were measured and compared. Results: The device with an FTO bottom electrode showed good transparency (>80%), low forming voltage (~-2.5V), and reliable bipolar RS behavior. Whereas, the one with Pt electrode showed both bipolar and unipolar RS behaviors unstably with large forming voltage (~-6.5V). Conclusion: Transparent and conducting FTO can successfully realize a transparent RRAM device. It is concluded that FTO electrode may form a stable interface with $Ta_2O_5$ switching layer and plays as oxygen ion reservoir to supply oxygen vacancies, which eventually facilitates a stable operation of RRAM device.

Comparison of characteristics of IZO-Ag-IZO and IZO-Au-IZO multilayer electrodes for organic photovoltaics

  • Jeong, Jin-A;Choi, Kwang-Hyuk;Park, Yong-Seok;Park, Ho-Kyun;Kim, Han-Ki
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.131-131
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    • 2010
  • We compared the electrical, optical, structural, and interface properties of indium zinc oxide (IZO)-Ag-IZO and IZO-Au-IZO multilayer electrodes deposited by linear facing target sputtering system at room temperature for organic photovoltaics. The IZO-Ag-IZO and IZO-Au-IZO multilayer electrodes show a significant reduction in their sheet resistance (4.15 and 5.49 Ohm/square) and resistivity ($3.9{\times}10^{-5}$ and $5.5{\times}10^{-5}$Ohm-cm) with increasing thickness of the Ag and Au layers, respectively. In spite of its similar electrical properties, the optical transmittance of the IZO-Ag-IZO electrode is much higher than that of the IZO-Au-IZO electrode, due to the more effective antireflection effect of Ag than Au in the visible region. In addition, the Auger electron spectroscopy depth profile results for the IZO/Ag/IZO and IZO/Au/IZO multilayer electrodes showed no interfacial reaction between the IZO layer and Ag or Au layer, due to the low preparation temperature. To investigate in detail the Ag and Au structures on the bottom IZO electrode with increasing thickness, a synchrotron x-ray scattering examination was employed. Moreover, the OSC fabricated on the IZO-Ag-IZO electrode shows a higher power conversion efficiency (3.05%) than the OSC prepared on the IZO-Au-IZO electrode (2.66%), due to its high optical transmittance in the wavelength range of 400-600 nm, which is the absorption wavelength of the P3HT:PCBM active layer.

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투명전도층이 없는 염료감응형 태양전지의 Ru 상대전극 연구 (Ru employed as Counter Electrode for TCO-less Dye Sensitized Solar Cells)

  • 노윤영;유기천;유병관;한정조;고민재;송오성
    • 대한금속재료학회지
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    • 제50권2호
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    • pp.159-163
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    • 2012
  • A TCO-less ruthenium (Ru) catalytic layer on glass substrate instead of conventional Ru/TCO/ glass substrate was assessed as counter electrode (CE) material in dye sensitized solar cells (DSSCs) by examining the effect of the Ru thickness on the DSSC performance. Ru films with different thicknesses (34, 46, 69, and 90 nm) were deposited by atomic layer deposition (ALD) on glass substrates to replace both existing catalyst and electrode layer. In order to make our comparison, we also prepared an Ru catalytic layer by a similar method on FTO/glass substrate. Finally, we prepared the $0.45cm^2$ DSSC device the properties of the DSSCs were examined by cyclic voltammetry (CV), impedance spectroscopy (EIS), and current-voltage (I-V) method. CV measurements revealed an increase in catalytic activity with increasing film thickness. The charge transfer resistance at the interface between the electrolyte and Rudecreased with increasing Ru thickness. I-V results showed that the energy conversion efficiency increased up to 1.96%. Our results imply that TCO-less Ru/glass might perform as both catalyst and electrode layer when it is used in counter electrodes in DSSCs.

산화티타늄피막의 광 전기분해 특성에 대한 연구 (A Study of Photoelectrolysis of Water by Use of Titanium Oxide Films)

  • 박성용;조원일;조병원;이응조;윤경석
    • 한국수소및신에너지학회논문집
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    • 제2권1호
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    • pp.47-56
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    • 1990
  • Pure titanium rods were oxidized by anodic oxidation, furnace oxidation and flame oxidation and used as a electrode in the photodecomposition of water. The maximum photoelectrochemical conversion efficiency(${\eta}$) was found for flame oxidized electrode ($1200^{\circ}C$ for 2 min in air), 0.8 %. Anodically oxidized electrodes have minimum photoelectrochemical conversion efficiencies, 0.3 %. Furnace oxidized electrode ($800^{\circ}C$ for 10min in air) has 0.5% phtoelectrochemical efficiency and shows a band-gap energy of about 2.9eV. The efficiency shows a parallelism with the presence of the metallic interstitial compound $TiO_{O+X}$(X < 0.33) at the metal-semiconductor interface, the thickness of the sub oxide layer and that of the external rutile scale.

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고압 적층 칩 캐패시터의 유전체 두께 및 내부전극 형상에 따른 AC, DC 절연 파괴 특성 (The AC, DC Dielectric Breakdown Characteristics according to Dielectric Thickness and Inner Electrode Pattern of High Voltage Multilayer Ceramic Capacitor)

  • 윤중락;김민기;이석원
    • 한국전기전자재료학회논문지
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    • 제21권12호
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    • pp.1118-1123
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    • 2008
  • High voltage multilayer ceramic capacitors (MLCCs) are classified into two classes-those for temperature compensation (class I) and high dielectric constant materials (class II). We manufactured high voltage MLCC with temperature coefficient characteristics of C0G and X7R and studied the characteristics of electric properties. Also we studied the characteristics of dielectric breakdown voltage (V) as the variation of thickness in the green sheet and how to pattern the internal electrodes. The dielectric breakdown by electric field was caused by defects in the dielectric materials and dielectric/electrode interface, so the dielectric thickness increased, the withstanding voltage per unit (E) thickness decreased. To overcome this problem, we selected the special design like as floating electrode and this design affected the increasing breakdown voltage(V) and realized the constant withstanding voltage per unit thickness(E). From these results, high voltage application of MLCCs can be expanded and the rated voltage can also be develop.

연료극 지지체식 고체산화물 연료전지의 기계적 및 전기적 특성에 미치는 Ni-YSZ의 미세구조의 영향 (Effect of Microstructure on Mechanical and Electrical Properties in Ni-YSZ of Anode Supported SOFC)

  • 최미화;최진혁;이태희;유영성
    • 한국수소및신에너지학회논문집
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    • 제22권5호
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    • pp.592-598
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    • 2011
  • Electrode of solid oxide fuel cell must have sufficient porosity to allow gas transport to the interface with electrolyte effectively but high porosity has a negative impact on structural stability in electrode support. Thus, the upper limit of porosity is based on consideration of mechanical strength of electrode. In this study, the effect of microstructure of Ni-YSZ anode supported SOFC on the mechanical and electrical property was investigated. LSCF composite cathode and 8YSZ electrolyte were used. The porosity of the anode was modified by the amount of graphite powder and added graphite contents were 24, 18, 12 vol%, respectively. The higher the porosity, the better the electrical performance, $P_{max}$. While the flexural strength decreased with increasing the amount of graphite. But the rate of increase in electrical performance and the rate of decrease in mechanical strength were not directly proportional to amount of graphite. The optimum graphite content incorporating both electrical and mechanical performance was 18 vol%.

BIocompatible Reduced Graphene Oxide Multilayers for Neural Interfaces

  • 김성민;주필재;안국문;김병수;윤명한
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.278.1-278.1
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    • 2013
  • Among the prerequisites for stable neural interfacing are the long-term stability of electrical performance of and the excellent biocompatibility of conducting materials in implantable neural electrodes. Reduced graphene oxide offers a great potential for a variety of biomedical applications including biosensors and, particularly, neural interfaces due to its superb material properties such as high electrical conductivity, decent optical transparency, facile processibility, and etc. Nonetheless, there have been few systematic studies on the graphene-based neural interfaces in terms of biocompatibility of electrode materials and long term stability in electrical characteristics. In this research, we prepared the primary culture of rat hippocampal neurons directly on reduced graphene oxide films which is chosen as a model electrode material for the neural electrode. We observed that the viability of primary neuronal culture on the present structure is minimally affected by nanoscale graphene flakes below. These results implicate that the multilayer films of reduced graphene oxides can be utilized for the next-generation neural interfaces with decent biocompatibility and outstanding electrical performance.

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Optimal EEG Locations for EEG Feature Extraction with Application to User's Intension using a Robust Neuro-Fuzzy System in BCI

  • Lee, Chang Young;Aliyu, Ibrahim;Lim, Chang Gyoon
    • 통합자연과학논문집
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    • 제11권4호
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    • pp.167-183
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    • 2018
  • Electroencephalogram (EEG) recording provides a new way to support human-machine communication. It gives us an opportunity to analyze the neuro-dynamics of human cognition. Machine learning is a powerful for the EEG classification. In addition, machine learning can compensate for high variability of EEG when analyzing data in real time. However, the optimal EEG electrode location must be prioritized in order to extract the most relevant features from brain wave data. In this paper, we propose an intelligent system model for the extraction of EEG data by training the optimal electrode location of EEG in a specific problem. The proposed system is basically a fuzzy system and uses a neural network structurally. The fuzzy clustering method is used to determine the optimal number of fuzzy rules using the features extracted from the EEG data. The parameters and weight values found in the process of determining the number of rules determined here must be tuned for optimization in the learning process. Genetic algorithms are used to obtain optimized parameters. We present useful results by using optimal rule numbers and non - symmetric membership function using EEG data for four movements with the right arm through various experiments.

FE model of electrical resistivity survey for mixed ground prediction ahead of a TBM tunnel face

  • Kang, Minkyu;Kim, Soojin;Lee, JunHo;Choi, Hangseok
    • Geomechanics and Engineering
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    • 제29권3호
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    • pp.301-310
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    • 2022
  • Accurate prediction of mixed ground conditions ahead of a tunnel face is of vital importance for safe excavation using tunnel boring machines (TBMs). Previous studies have primarily focused on electrical resistivity surveys from the ground surface for geotechnical investigation. In this study, an FE (finite element) numerical model was developed to simulate electrical resistivity surveys for the prediction of risky mixed ground conditions in front of a tunnel face. The proposed FE model is validated by comparing with the apparent electrical resistivity values obtained from the analytical solution corresponding to a vertical fault on the ground surface (i.e., a simplified model). A series of parametric studies was performed with the FE model to analyze the effect of geological and sensor geometric conditions on the electrical resistivity survey. The parametric study revealed that the interface slope between two different ground formations affects the electrical resistivity measurements during TBM excavation. In addition, a large difference in electrical resistivity between two different ground formations represented the dramatic effect of the mixed ground conditions on the electrical resistivity values. The parametric studies of the electrode array showed that the proper selection of the electrode spacing and the location of the electrode array on the tunnel face of TBM is very important. Thus, it is concluded that the developed FE numerical model can successfully predict the presence of a mixed ground zone, which enables optimal management of potential risks.