• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.11
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• pp.725-729
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• 2014

In this study, a transparent conductive oxide (TCO)-less dye-sensitized solar cells (DSSCs) was fabricated by using titanium (Ti) electrode to replace the Fluorine-doped tin oxide (FTO) for the reduction of manufacturing cost. Ti film was formed by electron beam evaporation method and the results showed the sheet resistance of Ti electrodes with a thikness of 500 nm similar to FTO. In case of power conversion efficiency (PCE), a DSSC with Ti electrodes showed a lower value than that with FTO by 0.38%. For the investigation of the difference, the DSSCs were measured and analyzed by using electrochemical impedance analyzer (EIS).

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.565-565
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• 2013

Free burning arcs where the work piece acts as an anode are frequently used for a number of applications. Our investigation is exclusively concerned with a simplified unified model of arcs and anode under steady state conditions at atmospheric pressure. The model is used to make predictions of arc and anode temperatures and arc voltage for a 200 A arc in argon. The computed temperatures along the axis between the cathode tip and the anode surface compare well the measured data. This knowledge of free burning arcfeatures can play a role in developing the atmospheric plasma systems, however, further investigation should include the modelling of Cu evaporation from anode and non-LTE situation near electrodes for more realistic calculations.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1789-1791
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• 2007

We fabricated OTFT-OLED display panel by using Ag-paste for source and drains electrode of OTFTs. The OTFTs were fabricated by solution processes such as spin-coating for PVP gate dielectric and screen printing for S/D electrodes with Ag-paste, except pentacene active layer which was deposited by evaporation. The mobility was 0.024 cm2/V.sec , off state current ${\sim}10-11A$, threshold voltage 7.6 V and on/off current ratio ${\sim}105$. The panel consisted of 16 x 16 pixels and each pixel consisted of 2 OTFTs, 1 Capacitor and 1 OLED. The pixels successfully worked in terms of current magnitude supplied to OLED and the control ability of driving and switching OTFTs.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.221-224
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• 2000

We have successfully demonstrated metal-ferroel-ectric-insulator-semiconductor (MFIS) devices using Al/LiNbO$_{3}$/SiN/Si structure. The SiN thin films were made into metal -insulator- semiconductor (MIS) devices by thermal evaporation of aluminum source in a dot away on the surface. The interface property of MFIS from 1MHz & quasistatic C-V is good and the memory window width is about 1.5V at 0.2V/s signal voltage sweep rate. The gate leakage current density of MFIS capacitors using a aluminum electrode showed the least value of 1x10$^{-8}$ A/$\textrm{cm}^2$ order at the electric field of 300㎸/cm. And the XRD patterns shows the probability of applications of LN for MFIS devices for FeRAMs on amorphous SiN buffer layer.

• Progress in Superconductivity
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• v.11 no.2
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• pp.158-161
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• 2010

We measured the critical current of a Cooper pair transistor consisting of two Josephson junctions and a gate electrode. The Cooper pair transistors were fabricated by using electron-beam lithography and double-angle evaporation technique. The Gate voltage dependence of critical current was measured by observing voltage jumps at various gate voltages while sweeping bias current. The observed oscillation was 2e-periodic, which shows the Cooper pair transistor had low level of quasiparticle poisoning.

• Journal of Surface Science and Engineering
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• v.28 no.1
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• pp.46-54
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• 1995

An electrochromic(EC) cell was constructed using $WO_3$ as a electrochromic material and NiO as a counter electrode, deposited onto ITO-coated glass by the implementation of electron beam evaporation. The electrolytic media were both lithium and proton conducting polymers such as poly-acrylonitrile(PAN)-$LiClO_4$, poly-ethylene oxide(PEO)-$LiClO_4$, poly-vinyl butyral(PVB)-LiCl and PVB-H$_3$$PO_4$. Potentiodynamic cycling of the cells using PAN-$LiClO_4$, or PVB-$H_3$$PO_4$ electrolyte yielded a transmission variation of more than 40% at the wavelength of 632.8 nm within less than 10 sec response time at room temperature. These results indicate that these electrolytes, transparent in gel type, are premising for the application in large area electrochromic windows.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1754-1756
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• 2000

Organic semiconductors based on fused-ring polycyclic aromatic hydrocarbon have great potential to be utilized as an active layer for electronic and optoelectronic devices. In this study, pentacene thin films and electrode materials were deposited by Organic Molecular Beam Deposition(OMBD) and vacuum evaporation respectively. For the gate dielectric, polyamic acid was spin-coated and cured into polyimide at 350$^{\circ}C$. Electrical characteristics of the devices were investigated, where the channel length and width was 50${\mu}m$ and 5mm. It was found that field effect mobility was 0.012$cm^{2}/Vs$, and on/off current ratio was $10^5$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.586-589
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• 1999

Organic semiconductors based on conjugated thiophene oligomer have great potential to be utilized as an active layer far electronic and optoelectronic devices. In this study, $\alpha$ -sexithiophene($\alpha$-6T) thin films and various electrode materials were deposited by Organic Molecular Beam Deposition(OMBD) and vacuum evaporation respectively. Those films were photolithographically patterned fur measurements. Electrical characterization of the thin film transistor with various channel length were measured, and field effect mobility is calculated by formula.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1357-1358
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• 2006

Indium tin oxide (ITO) thin film is a transparent electrode, which is widely applied to solar battery, illuminators, optical switches, liquid crystal displays (LCDs), plasma display panels (PDPs), and organic light emitting displays (OLEDs) due to its easy formation on glass substrates, goof optical transmittance, and good conductivity. ITO thin film is generally fabricated by various methods such as spray, CVD, evaporation, electron gun deposition, direct current electroplating, high frequency sputtering, and reactive DC sputtering. However, some problems such as peaks, bumps, large particles, and pin-holes on the surface of ITO thin film were reported, which caused the destruction of color quality, the reduction of device life time, and short-circuit. Chemical mechanical polishing (CMP) processis one of the suitable solutions which could solve the problems.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.252-253
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• 2007

In this paper the experiments of breakdown characteristics $SF_6$ liquid ($LSF_6$) in model GIS(Gas Insulated Switchgear) were described. From the experiments results, The ability of $LSF_6$ insulation is higher than high-pressurized $SF_6$ gas. The breakdown characteristics of $LSF_6$ were produced by bubble formed evaporation of $LSF_6$ and bubble caused by high electric emission. It is considered in this paper that the results are fundamental data for electric insulation design of superconductor and cryogenic equipments machinery which will be studied and developed in the future.