• 제목/요약/키워드: Electrochemical polishing

검색결과 86건 처리시간 0.026초

금속분리판의 Electro Polishing 및 CrN 코팅을 통한 PEMFC 성능 향상을 위한 연구 (A Study to Improve PEMFC Performance by Using Electro Polishing and CrN Coating on Metal Bipolar Plate)

  • 황성택;천승호;송준석;윤영훈;김병헌;장하;김대웅;현덕수;오병수
    • 한국자동차공학회논문집
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    • 제22권4호
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    • pp.65-71
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    • 2014
  • As an important component of a fuel cell, the bipolar plate comprises a large proportion in the fuel cell's volume, weight and price. The bipolar plate is the most widely used; however, graphite bipolar plate is large in volume, brittle and therefore easily broken during assembling. In addition, due to its poor machinability, production costs a lot, unless mass production. Compared with the graphite bipolar plate, the metal bipolar plate has good machinability, high electric conductivity and strong mechanical strength; however, it corrodes easily and has a high contact resistance, so in order to prevent corrosion and reduce the contact resistance, the basic metal needs to be processed by use of electro polishing and coating. The water which is produced by electrochemical reactions in the fuel cell must be discharged smoothly. In this study, in order to prevent corrosion the processes of electro polishing and CrN coating were used. According to the presence or absence of these processes, the contact angles can be measured and different metal bipolar plates can be made, these plates can be used for comparing and analyzing the performance of the fuel cell.

양극산화에 의한 다공성 알루미나 막의 기체투과 특성 (Gas Permeation Characteristics of Porous Alumina Membrane Prepared by Anodic Oxidation)

  • 함영민
    • 환경위생공학
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    • 제13권3호
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    • pp.72-78
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    • 1998
  • For investigation into gas permeation characteristics, the porous alumina membrane with asymmetrical structure, having upper layer with 10 nanometer under of pore diameter and lower layer with 36 nanometer of pore diameter, was prepared by anodic oxidation using DC power supply of constant current mode in an aqueous solution of sulfuric acid. The aluminium plate was pre-treated with thermal oxidation, chemical polishing and electrochemical polishing before anodic oxidation. Because the pore size depended upon the electrolyte, electrolyte concentration, temperature, current density, and so on, the the membranes were prepared by controling the current density, as a very low current density for upper layer of membrane and a high current density for lower layer of membrane. By control of current quantity, the thicknesses of upper layer of membranes were about $6{\;}{\mu}m$ and the total thicknesses of membranes were about $80-90{\;}{\mu}m$. We found that the mechanism of gas permeation depended on model of the Knudsen flow for the membrane prepared at each condition.

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Application of Potential-pH Diagram and Potentiodynamic Polarization of Tungsten

  • Seo, Yong-Jin;Park, Sung-Woo;Lee, Woo-Sun
    • Transactions on Electrical and Electronic Materials
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    • 제7권3호
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    • pp.108-111
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    • 2006
  • The oxidizer-induced corrosion state and microstructure of surface passive metal-oxide layer greatly influenced on the removal rate of tungsten film according to the slurry chemical composition of different mixed oxidizers. In this paper, the actual polishing mechanism and pH-potential equilibrium diagram obtained from potentiodynamic polarization curve were electrochemically compared. An electrochemical corrosion effect implies that slurries with the highest removal rate (RR) have the high dissolution rate.

전기화학적 마이크로머시닝 기술을 이용한 균일한 니오븀 표면 에칭 연구 (Homeogenous Etched Pits on the Surface of Nb by Electrochemical Micromachining)

  • 김경민;유현석;박지영;신소운;최진섭
    • 공업화학
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    • 제25권1호
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    • pp.53-57
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    • 2014
  • 본 연구에서는 micro-contact printing을 통하여 니오븀 호일 표면 위에 균일한 에칭 pits를 형성하였다. 균일한 보호층을 형성하고자 전해연마의 효과를 확인하였으며, 기존의 $O_2$ 플라즈마 공정 없이 손쉽게 균일한 에칭 pits를 형성시킬 수 있는 조건을 확인하였다. 메탄올 혼합 전해질을 사용하여 10 min 동안 에칭을 진행한 결과 니오븀 호일 표면 위에 지름과 간격이 각각 $10{\mu}m$$5{\mu}m$로 잘 정렬된 에칭 pits를 관찰하였다.

로렌츠원리에 의한 초정밀 전해연마 특성에 관한 연구 (Study on the Characteristics of Precision Electrochemical Polishing by Using Lorentz's Principle)

  • 김정두
    • 한국공작기계학회:학술대회논문집
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    • 한국공작기계학회 1995년도 추계학술대회 논문집
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    • pp.82-85
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    • 1995
  • Magnetic-electrolytic-abrasive polishign(MEAP) systemwas newly developed and the finishing characteristics of Cr-coated roller was analyzed. The paper describes the operational principle of MEAP system and magnetic field effect on the MEAP process by experimental results. The finishing characteristics and optimal finishing condition for Cr-coated roller were experimented and analyzed.

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전기화학적 식각정지에 의한 SDB SOI의 박막화 (Thinning of SDB SOI by electrochemical etch-stop)

  • 정연식;정귀상
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2001년도 하계학술대회 논문집 C
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    • pp.1369-1371
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    • 2001
  • This paper describes on thinning SDB SOI substrates by SDB technology and Electro-chemical etch-stop. The surface of the fabricated SDB SOI substrates is more uniform than that grinding or polishing by mechanical method, and this process is possible to accurate SOI thickness control. During Electrochemical etch-stop, leakage current versus voltage curves were measured for analysis of the open current potential (OCP) point and the passivation potential (PP) poin and determinated to anodic passivation potential. The surface roughness and selectively controlled thickness of the fabricated SOI substrates were analyzed by using AFM and SEM, respectively.

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LSV법을 이용한 전기화학적 메커니즘 연구 (A Study on the Electrochemical Mechanism using Liner Sweep Voltammetry (LSV) Method)

  • 이영균;한상준;서용진;이우선
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.164-164
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    • 2008
  • 금속배선공정에서 높은 전도율과 재료의 값이 싸다는 이유로 최근 Cu를 사용하였으나, 디바이스의 구조적 특성을 유지하기 위해 높은 압력으로 인한 새로운 다공성 막(low-k)의 파괴와, 디싱과 에로젼 현상으로 인한 문제점이 발생하게 되었다. 이러한 문제점을 해결하고자, 본 논문에서는 Cu 표면에 Passivation layer를 형성 및 제거하는 개념으로 공정시 연마제를 사용하지 않으며, 낮은 압력조건에서 공정을 수행하기 위해, 전해질의 농도 변화에 따른 Liner sweep voltammetry 법을 사용하여 전압활성화에 의한 전기화학적 반응이 Cu전극에 어떤 영향을 미치는지 연구하였으며, 표면 조성을 알아보기 위하여 Energy Dispersive Spectroscopy (EDS) 분석을 하였고, Cu disk의 결정성과 배향성 관찰을 위해 X-Ray diffraction (XRD)로 금속 표면을 비교하여 실험 결과로 얻어진 데이터를 통하여 ECMP 공정에 적합한 전해액 선정과 농도를 선택하였다.

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Preparation and Characterization of a Surface Renewable Solid State Hg/HgO Reference Electrode Utilizing Gold Amalgam

  • Kim, Won;Park, Jong-Man
    • Bulletin of the Korean Chemical Society
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    • 제28권3호
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    • pp.439-442
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    • 2007
  • A solid state Hg(Au)/HgO reference electrode was prepared utilizing gold amalgam solid particles. Solid fine powder of the gold amalgam was prepared by chemical reduction of Au(III) with NaBH4 followed by reduction of Hg(II) in the presence of gold fine particles. The solid content in the suspension of the gold amalgam particles and fine mercury oxide particles in DMF containing PVC was precipitated by the addition of a large amount of water to give solid Hg(Au)/HgO/PVC mixture. After drying, the mixture was pressure-molded to a physically stable Hg(Au)/HgO composite reference electrode material. The electrochemical characteristics of the electrode as a reference electrode were very similar to an ordinary Hg/HgO reference electrode. The electrode material can be molded and fabricated in any desired shape and size. The surface can be renewed by a simple polishing process whenever contaminated or deactivated. The applicability of the electrode in the electrochemical detection of carbohydrates after anion exchange separation was evaluated.

KOH 전해액의 전기 화학적 특성고찰 (Electrochemical Characteristic of KOH Electrolyte)

  • 박성우;한상준;이영균;이우선;서용진
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.540-540
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    • 2008
  • 본 논문에서는 KOH 전해액을 이용하여 Cu 막의 부동태층의 형성을 I-V를 통해 평가하였으며, 이를 토대로 최적화된 전압과 시간을 알 수 있었다. 또한, SEM, EDS, XRD를 통해 표면 품질 및 성분 분석을 비교 분석하였다.

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Dual Damascene 공정에서 Bottom-up Gap-fill 메커니즘을 이용한 Cu Plating 두께 최적화 (Cu Plating Thickness Optimization by Bottom-up Gap-fill Mechanism in Dual Damascene Process)

  • 유해영;김남훈;김상용;장의구
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.93-94
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    • 2005
  • Cu metallization using electrochemical plating(ECP) has played an important role in back end of line(BEOL) interconnect formation. In this work, we studied the optimized copper thickness using Bottom-up Gap-fill in Cu ECP, which is closely related with the pattern dependencies in Cu ECP and Cu dual damascene process at 0.13 ${\mu}m$ technology node. In order to select an optimized Cu ECP thickness, we examined Cu ECP bulge, Cu CMP dishing and electrical properties of via hole and line trench over dual damascene patterned wafers split into different ECP Cu thickness.

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