Thinning of SDB SOI by electrochemical etch-stop

전기화학적 식각정지에 의한 SDB SOI의 박막화

  • 정연식 (부경대학교 전자공학과) ;
  • 정귀상 (동서대학교 정보시스템공학부)
  • Published : 2001.07.18

Abstract

This paper describes on thinning SDB SOI substrates by SDB technology and Electro-chemical etch-stop. The surface of the fabricated SDB SOI substrates is more uniform than that grinding or polishing by mechanical method, and this process is possible to accurate SOI thickness control. During Electrochemical etch-stop, leakage current versus voltage curves were measured for analysis of the open current potential (OCP) point and the passivation potential (PP) poin and determinated to anodic passivation potential. The surface roughness and selectively controlled thickness of the fabricated SOI substrates were analyzed by using AFM and SEM, respectively.

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