• 전자공학회논문지D
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• 제35D권8호
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• pp.53-61
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• 1998

Dynamic characteristics of widely tunable SGDBR/SSGDBR laser diodes integrated with an electroabsorption modulator is inestigated using an improved large-signal timef-domain model. First, wide tunning properties of a SGDBR laser diode and a SSGDBR laser diode are analyzed respectively and compared with each other. And, intensity-modulation characteristics of a SGDBR laser diode incorprating an electroabsorption modulator are investigated. It is shown that an external modulation has the lower frequency chirp by 1/20 for almost same extinction ratios than a direct modulation, and a nearly transform-limited pulse train can be generated using the optical gating of an electroabsorption modulator.

• E2M - 전기 전자와 첨단 소재
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• 제11권11호
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• pp.28-36
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• 1998

Widely tunable diodes integrated with periodically sampled and chirped DBR(distributed Bragg reflector) and an EA(electroabsorption) modulator are analyzed dynamically using the improved largesinal time-domain model. The tuning characteristics of sampled- and chirped-grating DBR laser diodes are demonstrated theoretically. The results of the simulation agree well with those of the experiment. And the intensity-modulation properties of the laser diodes integrated with an EA modulator are calculated. It is shown that the external modulation has the lower frequency chirp by 1/20 for the same extinction ratio than the direct modulation, and also the short pulse train can be generated using the optical gating of an EA modulator.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2002년도 추계종합학술대회
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• pp.817-820
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• 2002

본 논문에서는 전계 흡수형 변조기를 사용한 400Gb/s 광송신기를 구성하고, 이에 대한 특성을 측정해 보았다. 그 결과 전계 흡수형 변조기에 가해지는 DC 바이어스 전압 및 온도를 변화시켰을 때 소광비, 출력 파워 및 파장이 변화하였다. 이러한 특성의 변화를 토대로 400Gb/s 광송신기의 최적화 설계가 가능하다.

• ETRI Journal
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• 제35권3호
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• pp.459-468
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• 2013

A novel integrated laser, that is, a distributed reflector laser diode integrated with an electroabsorption modulator, is proposed to improve the output efficiency, single-mode stability, and chirp. The proposed laser can be realized using the selective metalorganic vapor phase epitaxy technique (that is, control of the width of the insulating mask), and its fabrication process is almost the same as the conventional electroabsorption modulated laser (EML) process except for the asymmetric coupling coefficient structure along the cavity. For our analysis, an accurate time-domain transfer-matrix-based laser model is developed. Based on this model, we perform steady-state and large-signal analyses. The performances of the proposed laser, such as the output power, extinction ratio, and chirp, are compared with those of the EML. Under 10-Gbps NRZ modulation, we can obtain a 30% higher output power and about 50% lower chirp than the conventional EML. In particular, the simulation results show that the chirp provided by the proposed laser can appear to have a longer wavelength side at the leading edge of the pulse and a shorter wavelength side at the falling edge.

• Journal of the Optical Society of Korea
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• 제1권1호
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• pp.44-47
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• 1997

The integration of a GaAs/AlGaAs multi-quantum well electroabsorption modulator and a tapered waveguide vertical direction optical interconnect has been performed without the complicated regrowth process. Zn impurity-induced layer disordering of MQW layer is used to achieve the energy transfer between SQW and MQW regions. Light coupled into a SQW region was transferred to an MQW region and an intensity modulation of 10 dB extinction ratio was demonstrated.

• 대한전자공학회논문지SD
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• 제39권7호
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• pp.37-45
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• 2002

본 논문에서는 3차원 FDTD를 이용하여 진행파형 흡수 CPW(Coplanar waveguide) 광 변조기의 마이크로파 특성을 분석하여 최적화 설계하였다. 진행파형 구조에 있어서 마이크로파의 특성은 진성 영역의 두께와 폭에 영향을 받게 되고 신호전극과 접지전극의 위치와 신호전극의 폭에도 영향을 받게 된다. 진성 영역이 InAsP/InGaP (1.3Q) 의 양자우물로 구성되었을 때, 도파관의 폭이 $2{\mu}m$, 진성영역의 두께가 $0.9{\mu}m$ 신호전극과 접지전극 사이의 간격이 $3{\mu}m$일 때 마이크로파 손실을 최소화 하며 광파와의 속도정합을 이루었으며 이때의 임피던스는 약 50${\Omega}$으로 광 변조기의 최적화를 이룰 수 있었다. FDTD를 이용하여 다양한 구조의 변화가 마이크로파에 미치는 영향을 분석 하였으며 이를 이용한 보다 정확한 소자 설계가 가능함을 보였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권1호
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• pp.74-81
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• 2004

We propose a novel scheme to transmit high center frequency RF signals using electroabsorption devices (EADs) as frequency converters at the transmitter and the receiver. In this approach frequency heterodyning is employed for obtaining high center frequency. With the EAD as a detector/mixer at the receiver we demonstrated a smaller conversion loss than that of the conventional modulator/mixer. With EAD as a modulator/mixer at the transmitter and with two heterodyned lasers to generate an optical local oscillator (LO), we demonstrated a large reduction (${\sim}23dB$) in conversion loss, and the transmission is not limited by the optical saturation of the EAD. This transmission scheme has optical single-side-band transmission feature which greatly relieves the fiber dispersion effect.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권6호
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• pp.293-297
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• 2005

Linearity is an important property of optical devices for analog communications. In this paper, we study the 3rd-order interrnodulation distortion (IMD3) of an Inp/InGaAsP multiple-quantum-well (MQW) traveling-wave type electroabsorption modulator (TW-EAM). We observe abnormal notches in the IMD3 results those were different from notches by general transfer curve of electroabsorption modulators (EAMs). We analyze the phenomena through absorption coefficients according to wavelengths and bias voltages to verify appearance of the abnormal notchs, where it can be known to result from Stark-shift and broadening. We propose the method to enhance linearity of MQW-EAMs by using these effects.

• ETRI Journal
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• 제31권6호
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• pp.765-769
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• 2009

In this paper, we present the fabrication of 40 Gb/s traveling-wave electroabsorption modulator-integrated laser (TW-EML) modules. A selective area growth method is first employed in 40 Gb/s EML fabrication to simultaneously provide active layers for lasers and modulators. The 3 dB bandwidth of a TW-EML module is measured to be 34 GHz, which is wider than that of a lumped EML module. The 40 Gb/s non-return-to-zero eye diagram shows clear openings with an average output power of +0.5 dBm.

• ETRI Journal
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• 제45권1호
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• pp.163-170
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• 2023

We report an electroabsorption modulator (EAM)-integrated distributed Bragg reflector laser diode (DBR-LD) capable of supporting a high data rate and a wide wavelength tuning. The DBR-LD contains two tuning elements, plasma and heater tunings, both of which are implemented in the DBR section, which have blue-shift and red-shift in the Bragg wavelength through a current injection, respectively. The light created from the DBR-LD is intensity-modulated through the EAM voltage, which is integrated monolithically with the DBRLD using a butt-joint coupling method. The fabricated chip shows a threshold current of approximately 8 mA, tuning range of greater than 30 nm, and static extinction ratio of higher than 20 dB while maintaining a side mode suppression ratio of greater than 40 dB under a window of 1550 nm. To evaluate its modulation properties, the chip was bonded onto a mount including a radiofrequency line and a load resistor showing clear eye openings at data rates of 25 Gb/s nonreturn-to-zero and 50 Gb/s pulse amplitude modulation 4-level, respectively.