Dynamic chracteristics of widely tunable SGDBR/SSGDBR laser diodes integrated with an electroabsorption modulator

전계흡수변조기가 집적된 광대역 파장가변 SGDBR/SSGDBR 레이저 다이오드의 동적특성

  • 김병성 (광운대학교 전자공학부/전자통신공학과 신기술연구소) ;
  • 정영철 (광운대학교 전자공학부/전자통신공학과 신기술연구소) ;
  • 김선호 (한국과학기술연구원 정보전자연구부 광기술연구센터)
  • Published : 1998.08.01

Abstract

Dynamic characteristics of widely tunable SGDBR/SSGDBR laser diodes integrated with an electroabsorption modulator is inestigated using an improved large-signal timef-domain model. First, wide tunning properties of a SGDBR laser diode and a SSGDBR laser diode are analyzed respectively and compared with each other. And, intensity-modulation characteristics of a SGDBR laser diode incorprating an electroabsorption modulator are investigated. It is shown that an external modulation has the lower frequency chirp by 1/20 for almost same extinction ratios than a direct modulation, and a nearly transform-limited pulse train can be generated using the optical gating of an electroabsorption modulator.

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