• Journal of Information Display
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• 제2권4호
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• pp.8-14
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• 2001

Three types of conjugated polymers, poly(PZ-Pi), poly(PZ-BPI) and poly(PZ-NPI) were synthesized by Schiff-base reaction. These new conjugated polymers exhibited improved solubility in common organic solvents due to the presence of alkyl side chains as well as azomethine groups, Double layer LEDs made with the synthesized polymers as emitting layer and $Alq_3$, as electron transporting layer exhibited enhanced EL emission and efficiency compared to those of single layer LEDs. Double layer LEDs exhibited gradual shift in the emission peak th the single layer LED, made of only $Alq_3$ as the emitting layer as the thickness of $Alq_3$ layer increased.

• 한국재료학회지
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• 제15권10호
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• pp.626-631
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• 2005

GaN-related compound semiconductors were grown on the corrugated interface substrate using a metalorganic chemical vapor deposition system to increase the optical power of white LEDs. The patterning of substrate for enhancing the extraction efficiency was processed using an inductively coupled plasma reactive ion etching system and the surface morphology of the etched sapphire wafer and that of the non-etched surface were investigated using an atomic force microscope. The structural and optical properties of GaN grown on the corrugated interface substrate were characterized by a high-resolution x-ray diffraction, transmission electron microscopy, atomic force microscope and photoluminescence. The roughness of the etched sapphire wafer was higher than that of the non-etched one. The surface of III-nitride films grown on the hemispherically patterned wafer showed the nano-sized pin-holes that were not grown partially. In this case, the leakage current of the LED chip at the reverse bias was abruptly increased. The reason is that the hemispherically patterned region doesn't have (0001) plane that is favor for GaN growth. The lateral growth of the GaN layer grown on (0001) plane located in between the patterns was enhanced by raising the growth temperature ana lowering the reactor pressure resulting in the smooth surface over the patterned region. The crystal quality of GaN on the patterned substrate was also similar with that of GaN on the conventional substrate and no defect was detected in the interface. The optical power of the LED on the patterned substrate was $14\%$ higher than that on the conventional substrate due to the increased extraction efficiency.

• 전자공학회논문지D
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• 제35D권11호
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• pp.91-99
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• 1998

본 논문에서는 광통신용 5Gbps급 LiNbO₃ 패키징(packaging)하여 그 제반특성을 조사하였다. 광위상변조기의 광도파로는 양자교환법(APE, annealed proton exchange)으로 제작하였고 마이크로파전극은 ACPS(asymmetric coplanar strip)로 설계하였다. 소자특성으로 제작한 LiNbO₃위상변조기를 파장 1550nm에서 구동시켰을 때 소자의 변조대역폭, 삽입손실 및 구동전압은 각각 7㎓, 3.0dB 및 6V를 나타내었다.

• 센서학회지
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• 제28권6호
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• pp.341-344
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• 2019

Liquid crystal (LC) mesophase materials manifest a variety of phase transitions. The optical properties of LCs are highly dependent upon the phase and orientation of the optical axis with respect to the polarization of incoming light. Studying the LC phase transitions is significantly important for a wide range of scientific and industrial applications. In this study, we demonstrate the propagation velocity of the phase boundary between the nematic and isotropic phase of 4-Cyano-4-pentylbiphenyl (5CB) liquid crystal for different electric fields using a polarized optical microscope. The results demonstrate that the propagation velocity of the phase boundary exhibits a peak value for a specific voltage, attributed to the supercooling of the isotropic phase of the LC. The analysis of the propagation velocity for different electric fields also provides a simple optical platform to measure the thermal anisotropy and voltage dependent thermal properties of the homogeneously aligned LC.

• 한국정보전자통신기술학회논문지
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• 제16권2호
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• pp.109-115
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• 2023

본 논문은 UV(ultraviolet) 처리된 자기 조립 단분자막(fluorinated self-assembled monolayers; FSAM)을 배향막으로 사용한 액정의 배향 특성을 분석하였다. 물리화학적 분석을 사용하여 UV 처리 전후의 ITO(indium-tin-oxide) 유리 기판의 FSAM 특성을 확인하였다. FSAM 표면은 UV 처리에 의해 소수성에서 친수성으로 변화하였다. LC(liquid crystal) 분자는 UV 처리된 FSAM 표면에서 수평방향으로 정렬되었고 선경사각도 90°에서 0°로 변화하였다. UV 처리된 FSAM을 배향막으로 사용하여 제작된 TN(twist nematic) 셀의 전기광학(electro optics; EO) 특성은 기존의 PI(polyimide) 배향막에 비해 응답 시간이 빠른 것을 확인하였다. 이는 UV 처리된 FSAM 이 LCD(liquid crystal display)의 기존 폴리이미드 배향막을 대체할 잠재적인 가능성을 가진다.

• 한국결정성장학회지
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• 제6권4호
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• pp.532-542
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• 1996

Floating zone(FZ)법으로 육성하고 annealing한 undoped $LiNbO_3$ 단결정 및 MgO 또는 ZnO를 첨가한 $LiNbO_3$ 단결정의 전기적,광학적 특성을 조사하였다. 전기전도도, 유전율 및 전이온도, 전기.기계결합계수등의 전기적 특성과 광투과율, 굴절율 등의 광학적 특성을 측정하였으며, 비선형 광학특성의 척도라 할 수 있는 비선형 굴절율을 이론적으로 계산하였다. Undoped $LiNbO_3$ 단결정과 MgO 또는 ZnO를 첨가한 $LiNbO_3$ 단결정의 전기적, 광학적 특성을 비교함으로서 MgO 또는 ZnO의 첨가가 $LiNbO_3$ 단결정의 전기적 및 광학적 특성에 미치는 영향을 조사하였다.

• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.165-165
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• 2006

We prepared nonlinear optical (NLO) polymers possessing thermal and temporal stability, which were based on the polyimides appended with NLO chromophores. NLO chromophores with a terminal hydroxyl group have been synthesized by coupling between aminobenzene or julolidine donor and phenylene bridge, and then subsequent coupling between the resulting product and tricyanofuran acceptor. The chromophores were chemically bonded to the polyimides backbone through Mitsunobu reaction. The NLO polymers showed $160-170^{\circ}C$ of Tgs and were thermally stable up to $200^{\circ}C$. We obtained optical quality films by spincoating and evaluated their electro-optical properties and temporal stability.

• 한국광학회지
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• 제20권3호
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• pp.148-155
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• 2009

본 연구에서는 광학계의 굴절률, 중심두께 및 곡률반경에 대한 설계변수가 온도변화에 따라 1차 특성 및 결상성능에 어떠한 영향을 미치는지 분석하고, 이로부터 온도보정 설계를 실시하였다. 광학설계 변수들을 각각의 사용온도에 해당되는 값으로 변경한 후, 기존의 coupling 및 ruler 설계 개념을 폰 카메라용 렌즈설계에 적용하여 온도보정을 고려한 설계방법을 제시하였다. 본 연구에서 제시한 온도보정 설계개념을 4매 구성의 1/3.2" 5M 렌즈계에 최초로 적용하여 최적 설계한 결과, 폰 카메라용 렌즈에 대한 일반사양을 만족시키는 동시에 사용온도 $-10^{\circ}C{\sim}+60^{\circ}C$에서의 후초점거리 변화량에 대한 요구사양(${\Delta}BFL{\leq}10{\mu}m$)도 만족시켰다. 또한 최적 설계된 렌즈계의 전장(TTL)은 5.5 mm로 매우 컴팩트한 구성이다. 따라서 본 연구의 결과는 휴대폰 카메라 및 감시 카메라용 광학계 개발에 활용이 가능할 것으로 기대된다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1575-1577
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• 2002

In this study, multi layer type OLED(Organic Light Emitting Diode) has been fabricated using $Snq_2$, $Snq_4$, and $Alq_3$ for development of high efficiency, electrical and optical properties of multi layer type OLED investigated. The HTL(Hole Transfer Layer) and EML(Emitting Material Layer) were fabricated by using vacuum evaporation on ITO electrode, and its thickness controlled using thickness monitor. Al was used as a cathode. The electrical and optical properties such as J-V, brightness-V and EL spectrum of OLED device was measured using I.V.L.T system. The result, brightness of $Alq_3$, $Snq_2$ and $Snq_4$ were $3900cd/m^2$, $63cd/m^2$ and $23cd/m^2$ respectively.

• 한국표면공학회지
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• 제44권4호
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• pp.144-148
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• 2011

$Ga_2O_3$ doped $SnO_2$ thin films were grown by using pulsed laser deposition (PLD) technique on glass substrate. The optical and electrical properties of these films were investigated for different doping concentrations, oxygen partial pressures, substrate temperatures, and film thickness. The films were deposited at different substrate temperatures (room temperature to $600^{\circ}C$). The best opto-electrical properties is shown by the film deposited at substrate temperature of $300^{\circ}C$ with oxygen partial pressure of 80 m Torr and the gallium concentration of 2 wt%. The as obtained lowest resistivity is $9.57{\times}10^{-3}\;{\Omega}cm$ with the average transmission of 80% in the visible region and an optical band gap (indirect allowed) of 4.26 eV.