Journal of the Korean Institute of Telematics and Electronics D (전자공학회논문지D)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Properties and Fabrications of 5 Gbps level LiNbO$_3$ Optical Phase Modulator for a Broadband Optical Communications

광대역 광통신용 5 Gbps급 LiNbO$_3$광위상변조기 제작 및 특성

  • 김성구 (전자부품종합기술연구소 통신부품연구센터) ;
  • 윤형도 (전자부품종합기술연구소 통신부품연구센터) ;
  • 윤대원 (전자부품종합기술연구소 박막소자연구센터) ;
  • 박계춘 (목포대학교 전기공학과) ;
  • 강성준 (목포대학교 컴퓨터공학과)
  • Published : 1998.11.01
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Abstract

A 5Gbps LiNbO$_3$ optical phase modulator was designed, packaged and it's properties were characterized for optical communications. The APE(annealed proton exchange) method was employed for the optical waveguide and the electrode of ACPS (asymmetric coplanar strip) type was formed by electro-plating on LiNbO$_3$ for applying microwave signal with a dimension of width 18${\mu}{\textrm}{m}$, gap 9${\mu}{\textrm}{m}$ and length 50mm. The fabricated single-moded modulator operated at a 1550nm wavelength exhibits its modulation bandwidth, insertion loss and driving voltage of 7㎓, 3.0dB and 6V, respectively.

본 논문에서는 광통신용 5Gbps급 LiNbO₃ 패키징(packaging)하여 그 제반특성을 조사하였다. 광위상변조기의 광도파로는 양자교환법(APE, annealed proton exchange)으로 제작하였고 마이크로파전극은 ACPS(asymmetric coplanar strip)로 설계하였다. 소자특성으로 제작한 LiNbO₃위상변조기를 파장 1550nm에서 구동시켰을 때 소자의 변조대역폭, 삽입손실 및 구동전압은 각각 7㎓, 3.0dB 및 6V를 나타내었다.

Keywords