• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.675-675
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• 2013

CIGS thin films have received a great attention as a promising material for solar cells due to their high absorption coefficient, appropriate bandgap, long-term stability, and low cost production. CIGS thin films have been deposited by various methods such as co-evaporation, sputtering, spray pyrolysis and electro-deposition. In this study, Cu(In,Ga)Se2(CIGS) thin films were prepared using a single quaternary target by rf magnetron sputtering. The effect of sulfurization on the structural, compositional and electrical properties of the films was examined in order to develop the deposition process. An optimal sulfurization process will be selected for the preparation of CIGS thin films with good structural, optical and electrical properties by applying various sulfurization processes. In addition, the electrical properties of CIGS thin films were investigated by post-deposition annealing process. The carrier concentration of CIG(SSe) thin films after sulfurization was increased from $10^{14}cm^{-3}$ to $10^{16}cm^{-3}$ and the resistivity was increased from 10 ${\Omega}cm$ to $10^3$ ${\Omega}cm$. It is confirmed that CIG(SSe) thin films prepared at optimal deposition condition have similar atomic ratio to the target value after sulfurization.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.382-382
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• 2012

CIGS thin films have received great attention as a promising material for solar cells due to their high absorption coefficient, appropriate bandgap, long-term stability, and low cost production. CIGS thin films are deposited by various methods such as co-evaporation, sputtering, spray pyrolysis and electro-deposition. The deposition technique is one of the most important processes in preparing CIGS thin film solar cells. Among these methods, co-evaporation is one of the best technique for obtaining high quality and stoichiometric CIGS films. However, co-evaporation method is known to be unsuitable for commercialization. The sputtering is known to be very effective and feasible process for mass production. In this study, CIGS thin films have prepared by rf magnetron sputtering using a $Cu(In_{1-x}Ga_x)Se_2$ single quaternary target without post deposition selenization. This process has been examined by the effects of deposition parameters on the structural and compositional properties of the films. In addition, we will explore the influences of substrate temperature and additional annealing treatment after deposition on the characteristics of CIGS thin films. The thickness of CIGS films will be measured by Tencor-P1 profiler. The crystalline properties and surface morphology of the films will be analyzed using X-ray diffraction and scanning electron microscopy, respectively. The optical properties of the films will be determined by UV-Visible spectroscopy. Electrical properties of the films will be measured using van der Pauw geometry and Hall effect measurement at room temperature using indium ohmic contacts.

• Korean Chemical Engineering Research
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• v.54 no.2
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• pp.157-162
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• 2016

Porous $Co(OH)_2$ nano-flake thin films were prepared by a potential-controlled electro-deposition technique at various deposition voltage (-0.75, -1.0, -1.2, and -1.4 V) on Ti-mesh substrates for supercapacitor application. The potential of electrode was controlled to regulate the film thickness and the amount of $Co(OH)_2$ nano-flake on the titanium substrate. The film thickness was shown to reach the maximum value of $34{\mu}m$ at -1.4 V of electrode potential, where 17.2 g of $Co(OH)_2$ was deposited on the substrate. The specific discharge capacitances were measured to be 226, 370, 720, and $1008mF\;cm^{-2}$ in the 1st cycle corresponding to the films which were formed at -0.75, -1.0, -1.2, and -1.4 V of electrode potentials, respectively. Then the discharge capacities were decreased to be 206, 349, 586 and $866mF/cm^{-2}$, where the persistency rates were 91, 94, 81, and 86%, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.295-295
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• 2010

Nanoparticles of the compound semiconductor, Cu(In, Ga)Se2 (CIGS), were synthesized in solution under ambient pressure below $100^{\circ}C$ and characterized by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), optical absorption spectroscopy and energy-dispersive X-ray (EDX) analyses. These materials have chalcopyrite crystal structures and the particle sizes less than 100 nm. Synthetic conditions were studied for the crystallized CIGS nanoparticles formation to prevent from side products of Cu2Se, Cu2-xSe, and CuSe etc. The single phase CIGS nanoparticles were applied to coating of thin films photovoltaic cells. The electro deposition of CIGS thin films is also a good non-vacuum technology and under investigation. In aqueous solutions, the different chemical compositions of CIGS thin films were obtained, depending on pH, concentration of starting materials and deposition potentials. The surface morphology of the prepared CIGS thin films depends on the complexing ligands to the solutions during the electrochemical deposition.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2002.05a
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• pp.37-37
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• 2002

Diamoncl/Mo/Ni multi-layers on SKH-51 steel substrate was prepared to improve the abrasive wear resistance of a tool and die by a commercial chemical vapor deposition unit and electro-plating. The diamond after 7 hour deposition had cuba-octahedral structure with 2~5$\mu\textrm{m}$ grains. The existence of non-ferrous metals such as chromium, nickel and molybdenum between diamond and SKH-51 substrate results in forming higher quality of diamond layer by retarding carbon diffusion in the diamond layer during deposition, and also improving hardness and wear resistance. Surface cracks on the film was sometimes observed by the difference of by the thermal expansion coefficients between the steel substrate and the deposited layers during cooling.

• Applied Chemistry for Engineering
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• v.16 no.4
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• pp.527-532
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• 2005

Ionic polymer metal composites (IPMC) are soft polymeric smart materials having large displacement at low voltage in air and water. The polymeric electrolyte actuator consists of a thin and porous membrane and metal electrodes plated on both faces, in impregnation electro-plating method. The response and actuation of actuator are governed. Among many factors governing the activation and response of IPMC actuator, the surface electrode plays an important role. In this study, the well-designed modification of electrode surface was carried out in order to improve the chemical stability well as electromechanical characteristics of the IPMC actuator. We employed Ion Beam Assisted Deposition (IBAD) method to prepare the topologically homogeneous thin surface electrode. After roughing the surface of Nafion membrane in order to get a larger surface area, the IPMC was prepared by impregnation for electro-plating and re- coating on the surface through traditional chemical deposition, followed by an additional surface treatment with high conductive metals with IBAD. It was observed that our IPMC specimen shows the enhanced surface electrical properties as well as the improved actuation and response characteristics under applied electric field.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.20.2-20.2
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• 2010

Recently inkjet printing technology has been developed in the areas of low cost fabrication in environmentally friendly manufacturing processes. Although inkjet printing requires the interdisciplinary researches including development of materials, manufacturing processes and printing equipment and peripherals, manufacturing a printhead is still core of inkjet technology. In this study, a piezoelectric driven DOD (drop on demand) inkjet printhead has been fabricated on three layers of the silicon wafer in MEMS Technology because of its chemical resistance to industrial inks, strong mechanical properties and dimensional accuracy to meet the drop volume uniformity in printed electronics and display industries. The flow passage, filter and nozzles are precisely etched on the layers of the silicon wafers and assembled through silicon fusion bonding without additional adhesives. The piezoelectric is screen-printed on the top the pressure chamber and the nozzle plate surface is treated with non-wetting coating for jetting fluids. Printheads with nozzle number of 16 to 256 have been developed to get the drop volume range from 5 pL to 80 pL in various industrial applications. Currently our printheads are successfully utilized to fabricating color-filters and PI alignment layers in LCD Flat Panel Display and legend marking for PCB in Samsung Electronics.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.3
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• pp.2314-2320
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• 2015

MBR (Membrane Bio-Reactor) process is known to consume enormous energy to control membrane fouling. To solve this problem, electro-coagulation technique has been applied to MBR. A series of electro-coagulation was applied to activated sludge suspension under different current density condition. After the electro-coagulations, membrane filtration of the activated sludge suspensions was conducted to investigate the effect of electro-coagulation on the fouling. As current density increased 10 to 40A/m2, the total fouling resistance (Rc+Rf) decreased from 18 to 79%, showing that the electro-coagulation improved the membrane filtration efficiency. Both the organic concentration in bulk and the particles size distribution were not nearly changed before and after the electro-coagulation. The enhanced filtration efficiency might be due to the aluminum hydroxide generated from chemical precipitation, which can be acted as a dynamic membrane preventing a deposition of foulants on membrane surfaces.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.591-596
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• 2006

Lead zirconate titanate(PZT) thin films have been attracting worldwide interests in exploring their potential properties [1-3] or the origins [4-6] of their excellent dielectic, ferroelectric and piezoelectric properties near the morphotropic phase boundary (MPB). PZT thin films are expected to apply to the memory devices, micro electro mechanical systems (MEMS), and display because of their superior ferroelectric, pyroelectric, piezoelectric and electron emission properties. In this study, high- performance piezoelectric PZT thin films for actuated mirror array and optical scanner were developed by controlling the several factors, such as molecular-designed precursor, seeding layer and the residual stress in films, by a chemical solution deposition (CSD).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.20-23
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing(CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Chemical-Mechanical polishing(CMP) of conductors is a key process in Damascene patterning of advanced interconnect structure. The effect of alternative commercial slurries pads, and post-CMP cleaning alternatives are discuss, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. Electroplated copper deposition is a mature process from a historical point of view, but a very young process from a CMP perspective. While copper electro deposition has been used and studied for decades, its application to Cu damascene wafer processing is only now gaining complete acceptance in the semiconductor industry. The polishing mechanism of Cu-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. however it is important to understand the effect of oxidizer on copper passivation layer in order to obtain higher removal rate and non-uniformity during Cu-CMP process. In this paper, we investigated the effects of oxidizer on Cu-CMP process regarding the additional volume of oxidizer.