• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2015년도 추계학술대회 논문집
• /
• pp.187-187
• /
• 2015

마그네슘 합금은 지구상에 존재하는 가장 경량인 금속이며 비강도가 우수할 뿐만 아니라 진동 감쇠능과 절삭성 및 전자파 차폐성 등이 뛰어나 전자제품, 수송기기 부품, 주방제품 및 의료 분야 등 광범위한 분야에 이용이 크게 기대되고 있다. 그러나 마그네슘은 표준 전극 전위가 매우 낮은 활성 금속이기 때문에 쉽게 산화되며 표준 전극 전위가 높은 이종 금속과 접촉하면 먼저 부식되는 등 내식성이 현저히 낮아 그 사용범위에 제약을 받는다. 그러므로 마그네슘 금속을 사용하기 위해서는 내식성 및 기계적 특성을 향상시키는 표면처리가 필수적이다.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2014년도 추계학술대회 논문집
• /
• pp.227-228
• /
• 2014

마그네슘은 금속 재료중 화학적 활성이 높아 내식성 향상을 위해 표면처리 공정이 반드시 필요하다. 플라즈마 전해 산화를 통한 산화 피막 생성 후 좀더 높은 내식성 향상을 위해 전착 도장법을 사용할 수 있다. 본 논문에서는 전원 인가 방식에 따라 pulse 전원을 on/off 비율에 따른 피막 두께 변화를 측정 하였고 전착 도장을 시행 하여 cross cut test를 통한 부착성 시험을 진행해 on/off 비율 1:4 조건에 250V 전압을 인가 하였을 때 부착성이 가장 우수함을 확인 하였다. 또한 플라즈마 전해 산화 후 탕세 공정을 통해 전착 도장의 내열탕 시험 후 표면 blister의 개선 효과를 얻을 수 있었다.

• 한국자원리싸이클링학회:학술대회논문집
• /
• 한국자원리싸이클링학회 2003년도 추계정기총회 및 국제심포지엄
• /
• pp.185-189
• /
• 2003

The effect of surface roughness of the substrate on HF-CVD diamond coating was researched. The surface roughness was changed variously by electro-chemical etching conditions. The etching process acted to remove the metallic cobalt from the WC-Co. Diamond nucleation density was higher in etched the substrate. Therefore, the etching process was effective in both Co-removal and higher surface roughness, leading to the improving the diamond nucleation and deposition.

• Progress in Superconductivity
• /
• 제12권2호
• /
• pp.118-123
• /
• 2011

The properties of $2^{nd}$ generation high temperature superconducting wire, coated conductor strongly depend on the quality of superconducting oxide layer and property of metal substrate is one of the most important factors affecting the quality of coated conductor. Good mechanical and chemical stability at high temperature are required to maintain the initial integrity during the various process steps required to deposit several layers consisting coated conductor. And substrate need to be nonmagnetic to reduce magnetization loss for ac application. Hastelloy and stainless steel are the most suitable alloys for metal substrate. One of the obstacles in using stainless steel as substrate for coated conductor is its difficulties in making smooth surface inevitable for depositing good IBAD layer. Conventional method involves several steps such as electro polishing, deposition of $Al_2O_3$ and $Y_2O_3$ before IBAD process. Chemical solution deposition method can simplify those steps into one step process having uniformity in large area. In this research, we tried to improve the surface roughness of stainless steel(SUS310). The precursor coating solution was synthesized by using yttrium complex. The viscosity of coating solution and heat treatment condition were optimized for smooth surface. A smooth amorphous $Y_2O_3$ thin film suitable for IBAD process was coated on SUS310 tape. The surface roughness was improved from 40nm to 1.8 nm by 4 coatings. The IBAD-MgO layer deposited on prepared substrate showed good in plane alignment(${\Delta}{\phi}$) of $6.2^{\circ}$.

• 접착 및 계면
• /
• 제10권4호
• /
• pp.155-161
• /
• 2009

최근 자동차용 도료의 가장 큰 관심 중에 한 가지는 도장공정을 줄여 생산성 및 환경친화성을 높이는 "compact coating process"이다. 그 중에서 pre-primed 도료는 기존의 전착도료와 primer 도료를 대체하는 도료로서 각광받고 있는 기술이다. 용접이 가능한 weldable pre-primed 도료에서 가장 중요한 물성은 유연성, 내식성, 용접성 등이다. 본 연구에서는 부착성과 유연성이 우수한 polyester resin, 이를 개량하여 유연성을 극대화한 elastomeric polyester resin을 합성하였고, 내구성과 물리적 성질이 우수한 polyvinyliedene fluoride resin을 합성한 후 경화거동 및 인장물성 등을 평가하였다. elastomeric polyester resin을 사용한 도료시스템이 유연성 및 부착성 측면을 고려했을 때, pre-primed 도료시스템에 적용하기에 가장 적합하였다.

• 전자공학회논문지A
• /
• 제30A권10호
• /
• pp.33-40
• /
• 1993

A reflection type 16x8 S-SEED array from LP(Low Pressure)-MODVD-grown GaAs/AlGaAs extremely shallow quantum well(ESQW) structures, with 4% Al fraction, has been fabricated. Its intrinsic region consists of 50 pairs of alternating 100.angs. GaAs and 100.angs. $Al_{0.04}$Ga$_{0.96}$As layers. A multilayer reflector stack of $Al_{0.04}$/Ga$_{0.96}$ As(599$\AA$)/AlAs(723$\AA$) was incorporated for the reflection plane below the p-i-n structures. The device processing after the MOCVD growth includes the mesa etching, isolation etching, insulator deposition, p & n metallization, and AR(Anti-Reflection) coating. For switching characteristics of the S-SEED in the form of p-i-n ESQW diode, the maximum optical negative resistance was observed at 856nm. Reflectance measurements showed a change from 15.6% to 43.3% for +0.9V to -6V bias. The maximum contrast ration of the S-SEED array was 2.0 and all the 128 devices showed optical bistability with contrast ratios over 2.4 at 5V reverse bias.

• 한국표면공학회지
• /
• 제41권5호
• /
• pp.240-244
• /
• 2008

Composite plating is a method of co-deposition of plating layer with metallic and/or non-metallic particles to improve the plating layer properties such as high corrosion resistance and photolysis of organic compounds. The properties of nickel-ceramic composite plating are significantly depend on the surface characteristics of co-deposited particles as well as the quantity in electrolyte. In this study, Ni-$TiO_2$ composite coating layer was produced by electrodeposition technique from non-aqueous eletrolyte and its surface characteristics as well as photolytic properties were investigated. The amounts of immobilized $TiO_2$ particles increased with increasing the initial $TiO_2$ particles contents in the bath. Samples electroplated with the current density of $0.5\;A/dm^2$ showed the significantly improved homogeneous $TiO_2$ particles distribution. The corrosion resistance of Ni-$TiO_2$ composite coating layer also improved with increaing the amounts of $TiO_2$ particles. Etched sample showed about 10% increased photolytic rate of organic matter compare to that of the non-etched.

• Journal of Electrochemical Science and Technology
• /
• 제10권3호
• /
• pp.335-343
• /
• 2019

In this study, $Sr_2Ni_{1.8}Mo_{0.2}O_{6-{\delta}}$ (SNM) with a double perovskite structure was investigated as an alternative anode for use in the $CH_4$ fuel in solid oxide fuel cells. SNM demonstrates a double perovskite phase over $600^{\circ}C$ and marginal crystallization at higher temperatures. The Ni nanoparticles were exsolved from the SNM anode during the fabrication process. As the SNM anode demonstrates poor electrochemical and electro-catalytic properties in the $H_2$ and $CH_4$ fuels, it was modified by applying a samarium-doped ceria (SDC) coating on its surface to improve the cell performance. As a result of this SDC modification, the cell performance improved from $39.4mW/cm^2$ to $117.7mW/cm^2$ in $H_2$ and from $15.9mW/cm^2$ to $66.6mW/cm^2$ in $CH_4$ at $850^{\circ}C$. The mixed ionic and electronic conductive property of the SDC provided electrochemical oxidation sites that are beyond the triple boundary phase sites in the SNM anode. In addition, the carbon deposition on the SDC thin layer was minimized due to the SDC's excellent oxygen ion conductivity.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
• /
• pp.100-101
• /
• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• 한국표면공학회지
• /
• 제45권6호
• /
• pp.248-256
• /
• 2012

A Pd-based hydrogen membranes for hydrogen purification and separation need high hydrogen perm-selectivity. The surface roughness of the support is important to coat the pinholes free and thin-film membrane over it. Also, The pinholes drastically decreased the hydrogen perm-selectivity of the Pd-based composite membrane. In order to remove the pinholes, we introduced various surface pre-treatment such as alumina powder packing, nickel electro-plating and micro-polishing pre-treatment. Especially, the micro-polishing pretreatment was very effective in roughness leveling off the surface of the porous nickel support, and it almost completely plugged the pores. Fine Ni particles filled surface pinholes with could form open structure at the interface of Pd alloy coating and Ni support by their diffusion to the membrane and resintering. In this study, a $4{\mu}m$ surface pore-free Pd-Cu-Ni ternary alloy membrane on a porous nickel substrate was successfully prepared by micro-polishing, high temperature sputtering and Cu-reflow process. And $H_2$ permeation and $N_2$ leak tests showed that the Pd-Cu-Ni ternary alloy hydrogen membrane achieved both high permeability of $13.2ml{\cdot}cm^{-2}{\cdot}min^{-1}{\cdot}atm^{-1}$ permation flux and infinite selectivity.