• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.375-375
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• 2007

In the conventional crystallization method, thepoly-Si TFTs show poor device-to-device uniformity because of the random location of the grain boundaries. However, our new crystallization method introduced in this paper employed substrate-embedded seeds on the highly ordered anodic alumina template to control both the location of seeds and the number of grain boundaries intentionally. In the process of excimer laser crystallization (ELC), a-Si film deposited on the anodic alumina by low pressure chemical vapor deposition (LPCVD) is transformed into fine poly-Si grains by explosive crystallization (XC) prior to primary melting. At the higher energy density, the film is nearly completely melted and laterally grown by super lateral growth (SLG) from remained small part of the fine poly-Si grains as seeds at the Si/anodic alumina interface. Resultant grain boundaries have almost linear functions of the number of seeds in concavities of anodic alumina which have a constant spacing. It reveals the uniformity of. device can be enhanced prominently by controlling location and size of pores which contains fine poly~Si seeds under artificial anodizing condition.

• ETRI Journal
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• v.42 no.6
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• pp.837-845
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• 2020

The objective of this study was to implement an in vitro exposure system for 28 GHz to investigate the biological effects of fifth-generation (5G) communication. A signal source of 28 GHz for 5G millimeter-wave (MMW) deployment was developed, followed by a variable attenuator for antenna input power control. A power amplifier was also customized to ensure a maximum output power of 10 W for high-power 28-GHz exposure. A 3-dB uniformity over the 80 mm × 80 mm area that corresponds to four Petri dishes of three-dimensional cell cultures can be obtained using a customized choke-ring-type antenna. An infrared camera is employed for temperature regulation during exposure by adjusting the airflow cooling rate via real-time feedback to the incubator. The reported measurement results confirm that the input power control, uniformity, and temperature regulation for 28-GHz exposure were successfully accomplished, indicating the possibility of a wide application of the implemented in vitro exposure system in the fields of various MMW dose-response studies.

• Journal of Information Display
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• v.2 no.3
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• pp.66-71
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• 2001

MCFEDs (MOSFET-Contoolled Field Emission Displays) were fabricated to evaluate the validity of MCFEA for display application. The electrical properties of FEAs (Field Emitter Arrays), HVMOSFETs (High-Voltage MOSFETs), and MCFEAs (MOSFET-Controlled Field Emitter Arrays) were measured. The extraction gate voltage of the FEAs to obtain the anode current of 10 nA/tip was around 71 V. The breakdown voltages of the HVMOSFETs were above 81 V for all the samples. The I-V characteristics of the MCFEAs showed that the emission currents of the FEAs were well controlled depending on the control gate voltages of the HVMOSFETs. To avoid the harmful effects during the packaging process, the performance of the MCFEDs was evaluated in a high vacuum chamber. The emission images of the MCFEDs were controlled through very-through operation. From the comparison with a conventional FED, it was proven that the poor uniformity of FED could be improved through the integration with HVMOSFET.

• Transactions on Electrical and Electronic Materials
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• v.8 no.6
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• pp.268-273
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• 2007

In this study, It was studied about the luminance characteristics of 17 inch direct-type back light using EEFL(external electrode fluorescent lamp) and CCFL(cold cathode fluorescent lamp). The EEFL has a long life time because the electrode is installed outside of lamp. And it is produced in lower price than conventional CCFL. Moreover, it does not need process of installing internal electrode. However, the EEFL technology has several problems such as difficulty of designing driving inverter and preventing this phenomenon along the skin of lamps. We suggested two types of backlight unit for LCD TV application using the EEFL and the CCFL. We found optimized optical design parameters. We set the optical variation parameters such as lamp height, lamp distance, total thickness, and angles of inner walls. We achieved 7580 nits of center luminance, 82% of luminance uniformity by using 20 lamps of the EEFL and 7297 nits of center luminance, 78% of luminance uniformity by using 16 lamps of the CCFL.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.2
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• pp.81-84
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• 2014

The bipolar resistive switching characteristics of resistive random access memory (ReRAM) based on $HfO_2$ thin films have been demonstrated by using Ag/$HfO_2$/Pt structured ReRAM device. MIcrowave irradiation (MWI) treatment at low temperature was employed in device fabrication with $HfO_2$ thin films as a transition layer. Compared to the as-deposited Ag/$HfO_2$/Pt device, highly improved uniformity characteristics of resistance values and operating voltages were obtained from the MWI treatment Ag/$HfO_2$/Pt ReRAM device. In addition, a stable DC endurance (> 100 cycles) and a high data retention (> $10^4$ sec) were achieved.

• Journal of the Korean Solar Energy Society
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• v.30 no.6
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• pp.102-107
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• 2010

a-Si solar cell has relatively dominant drift current when compared with crystalline solar cell due to the high internal electric field. Such drift current make an impact on the PV module in the local shading. In this paper, the a-Si PV module output characteristics of shading effects was approached in terms of process condition, because of the different deposition layer of thin film lead to rising the resistance. We suggested design condition to ensure the long-term durability of the module with regard to the degradation factors such as hot spot by analyzing the module specification. The result shows a remarkable difference on module uniformity for each shading position. In addition, the unbalanced power loss due to power mismatch of each module could intensify the degradation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.8
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• pp.491-496
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• 2014

The resistive switching characteristics of resistive random access memory (ReRAM) based on amorphous $Ge_{0.5}Se_{0.5}$ thin films have been demonstrated by using Ti/Ag nanocrystals/$Ge_{0.5}Se_{0.5}$/Pt structure. Ag nanocrystals (Ag NCs) were spread on the amorphous $Ge_{0.5}Se_{0.5}$ thin film and they played the role of metal ions source. As a result, comparing the conventional Ag/$Ge_{0.5}Se_{0.5}$/Pt structure, this Ti/Ag NCs/$Ge_{0.5}Se_{0.5}$/Pt ReRAM device exhibits the highly uniform bipolar resistive switching (BRS) characteristics, such as the operating voltages, and the resistance values. At the same time, a stable DC endurance(> 100 cycles), and the excellent data retention (> $10^4$ sec) properties were found from the Ti/Ag NCs/$Ge_{0.5}Se_{0.5}$/Pt structured ReRAM device.

• Progress in Superconductivity and Cryogenics
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• v.11 no.4
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• pp.33-36
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• 2009

An air gap between the pancake windings was provided in this paper to increase the central magnetic field of a high temperature superconducting (HTS) magnet consisting of pancake windings. Unlike the LTS magnet, providing an air gap between the pancake windings increases the central magnetic field of a HTS magnet. Furthermore, the uniformity of the magnetic field near the center of the magnet increased because the pancake windings spread out in wider area. Effects of the air gap on the central magnetic field of an HTS magnet was described in this paper, Calculation of the critical current was carried out by using E-J relation of the HTS wire and the optimization technique was adopted to obtain the appropriate critical current which could maximize the central magnetic field. Pancake windings with BSCCO-2223 HTS wire were wound on glass epoxy bobbin. 6 double pancake windings with 200 turns were used to construct a HTS magnet. Characteristics of the HTS magnet including the central magnetic field and the uniformity of the magnetic field were measured and compared with the results of calculation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.375-375
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• 2010

CdTe as an absorber material is widely used in thin film solar cells with the heterostructure due to its almost ideal band gap energy of 1.45 eV, high photovoltaic conversion efficiency, low cost and stable performance. The deposition methods and preparation conditions for the fabrication of CdTe are very important for the achievement of high solar cell conversion efficiency. There are some rearranged reports about the deposition methods available for the preparation of CdTe thin films such as close spaced sublimation (CSS), physical vapor deposition (PVD), vacuum evaporation, vapor transport deposition (VTD), closed space vapor transport, electrodeposition, screen printing, spray pyrolysis, metalorganic chemical vapor deposition (MOCVD), and RF sputtering. The RF sputtering method for the preparation of CdTe thin films has important advantages in that the thin films can be prepared at low growth temperatures with large-area deposition suitable for mass-production. The authors reported that the optical and electrical properties of CdTe thin film were closely connected by the thickness-uniformity of the film in the previous study [1], which means that the better optical absorbance and the higher carrier concentration could be obtained in the better condition of thickness-uniformity for CdTe thin film. The thickness-uniformity could be controlled and improved by the some process parameters such as vacuum level and RF power in the sputtering process of CdTe thin films. However, there is a limitation to improve the thickness-uniformity only in the preparation process [1]. So it is necessary to introduce the external or additional method for improving the thickness-uniformity of CdTe thin film because the cell size of thin film solar cell will be enlarged. Therefore, the authors firstly applied the chemical mechanical polishing (CMP) process to improving the thickness-uniformity of CdTe thin films with a G&P POLI-450 CMP polisher [2]. CMP process is the most important process in semiconductor manufacturing processes in order to planarize the surface of the wafer even over 300 mm and to form the copper interconnects with damascene process. Some important CMP characteristics for CdTe were obtained including removal rate (RR), WIWNU%, RMS roughness, and peak-to-valley roughness [2]. With these important results, the CMP process for CdTe thin films was performed to improve the thickness-uniformity of the sputtering-deposited CdTe thin film which had the worst two thickness-uniformities of them. Some optical properties including optical transmittance and absorbance of the CdTe thin films were measured by using a UV-Visible spectrophotometer (Varian Techtron, Cary500scan) in the range of 400 - 800 nm. After CMP process, the thickness-uniformities became better than that of the best condition in the previous sputtering process of CdTe thin films. Consequently, the optical properties were directly affected by the thickness-uniformity of CdTe thin film. The absorbance of CdTe thin films was improved although the thickness of CdTe thin film was not changed.

• Proceedings of the KIEE Conference
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• 1997.07e
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• pp.1764-1766
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• 1997

In this paper, the illuminance distribution of blackboards on classroom in elementary, junior, and senior high school was measured and analyzed. Generally, average illuminance and uniformity of illuminance was 519[lx] and 0.543 (elementary: 389[lx], 0.387; junior: 632[lx], 0.570; senior: 527[lx], 0.608) respectively. When all lighting fixtures in each classroom were turned on, average illuminance was higher about 65% than lights-out, and, in case that local lighting fixtures exist, was higher 27% than absence, but uniformity of illuminance turned bad on the contrary ($0.462{\rightarrow}0.676$). According to classification into direction of windows on classroom. facing north, both were bad. In case of classroom to slant to east or west, the difference of illuminance at the forenoon and afternoon was big, and uniformity of illuminance was also bad.