• Journal of Electrical Engineering and Technology
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• v.7 no.3
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• pp.336-341
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• 2012

Deformations in a cage-induction machine are investigated with simulations. The contribution of the Maxwell stress in the air gap and coil regions of the machine on the deformation is studied by comparing results obtained with and without inclusion of the stress into the calculation. The work attests the acceptability of an energy-based magneto-mechanical model for a 2D mesh of two different rotating electrical machines.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05a
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• pp.61-64
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• 2003

The degradation of the dielectric properties of insulating papers that were used under loaded conditions at cryogenic temperature was paid attention. Electrical and tensile stress properties of dielectric paper at cryogenic temperature have been investigated to optimum insulating design of high-Tc superconducting(HTS) cable. Tensile strength of PPLP in liquid nitrogen was high more than that of air, but tensile strain could know that decrease sharply. According as tensile strength increases, the breakdown stress of PPLP in liquid nitrogen was decreased.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.2
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• pp.45-50
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• 2005

To improve mean-life and reliability of power cable, in this study, we have investigated electrical properties and stress-strain showing by changing the content of carbon black that is semiconductive additives for underground power transmission. Specimens were made of sheet form with the nine of specimens for measurement. Volume resistivity of specimens was measured by volume resistivity meter after 10 minutes in the pre-heated oven of both 25±1 [℃] and 90±1 [℃]. And stress-strain of specimens was measured by TENSOMETER 2000. A speed of measurement was 200[mm/min], ranges of stress and strain were 400[Kgf/㎠] and 600[%]. In addition tests of stress-strain were progressed by aging specimens in air oven. From this experimental results, volume resistivity was high according to increasing the content of carbon black. And yield stress was increased, while strain was decreased according to increasing the content of carbon black. And stress-strain were decreased some after aging because of oxidation reaction of chemical defect. We could know EEA was excellent more than other specimens from above experimental results.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.322-325
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• 2000

N-channel poly-Si TFT, Processed by Solid Phase Crystalline(SPC) on a glass substrate, has been investigated by measuring its electrical properties before and after electrical stressing. It is observed that the threshold voltage shift due to electrical stress varies with various stress conditions. Threshold voltages measured in 1.5$\mu\textrm{m}$ and 3$\mu\textrm{m}$ poly-Si TFTs are 3.3V, 3.V respectively. With the threshold voltage shia the degradation of transconductance(G$\_$m/) and subthreshold swing(S) is also observed.

• Journal of the Korean Society of Safety
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• v.16 no.4
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• pp.7-13
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• 2001

Wire electrical discharge machining experiments in conducted to investigate characteristics of acoustic emission (AE) and electrical discharge energy due to current peak (I$_{p}$), pulse on time($\tau$/on/). The AE signals are obtained with a sensor attached to workpiece side. Machining states are identified with scanning electron microscopy and residual stress analyzer. It is demonstrated that the residual stress provide reliable informations about the machining states. Moreover, machining states can be detected successfully using both the residual stress and AE count rate.e.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.64 no.3
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• pp.417-421
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• 2015

In this paper, study for B-H curve characteristics of the magnetic material due to tensile stresses of submarine for magnetic silence. For the experiment, made the sample of the material of AH36 and made to a B-H curve Tracer. In addition, design and made a system of stress by the weight in order to apply a tensile stress, it was possible to obtain results for the change of the magnetization.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.1
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• pp.1-6
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• 2015

In this work, the combined meandering-pattern stress-sensors were presented in order to achieve the high sensitivity of stress sensors. Compared to the previous works, which have been using the single meandering-pattern stress-sensors, the sensitivity was approximately observed to increase by 30%~70%. Also, in this paper, more simple and convenient stress-measurement method was presented.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.489-492
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• 1999

The effects of alternate bias stress on p-channel poly-Si TPT's has been systematically investigated. It has been shown that the application of alternate bias stress affects device degradation for the negative bias stress as well as device improvement for the positive bias stress. This effects have been related to the hot carrier injection into the gate oxide rather than the generation of defect states within the poly-Si/SiO$_2$ under bias stress.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.11
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• pp.869-873
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• 2001

The effects of alternate bias stress on p-channel poly-Si TFT\`s has been systematically investigated. We alternately applied positive and negative bias stress on p-channel poly-Si TFT\`s, device Performance(V$\_$th/, g$\_$m/, leakage current, S-slope) are alternately appeared to be increasing and decreasing. It has been shown that device performance degrade under the negative bias stress while improve under the positive bias stress. This effects have been related to the hot carrier injection into the gate oxide rather than the generation of defect states within the poly-Si/SiO$_2$ interface under alternate bias stress.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.749-752
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• 2004

Unlike OLEDs, there is no lifetime testing procedure for TFTs. In this work, we have defined such a procedure and developed a method for the accelerated stress testing of TFT pixel circuits in a-Si AMOLED displays. The acceleration factors derived are based on high current and temperature stress, and can be used to significantly reduce the testing time required to guarantee a 20000-hour display backplane lifespan.