• Title/Summary/Keyword: Electrical insulating materials

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Insulation Properties of Unaged Stator Winding Bars for Turbine Generators (터빈 발전기용 비열화 고정자 권선 바의 절연 특성)

  • Kim, Tae-Hee;Kang, Myung-Guk;Lee, Jai-Kwun
    • Proceedings of the KIEE Conference
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    • 2005.07c
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    • pp.2097-2099
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    • 2005
  • Class-F and class-B insulating materials based on the resin rich type mica-epoxy composites for the stator windings in large turbine generators have been developed by DHIC. In recent, stator winding bars applied with prototype insulation tapes and commercially available resin rich groundwall tapes were produced through the same manufacturing processes as the real bars. Comparative tests to obtain the insulation properties of both bars were carried out such as IR/PI. dissipation factor and partial discharge at room temperature. In this paper, the manufacturing processes and the insulation properties of the bars which were not aged are presented.

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Preparation and Characterization of MFIS Using PT/BFO/$HFO_2$/Si Structures

  • Kim, Kwi-Junga;Jeong, Shin-Woo;Han, Hui-Seong;Han, Dae-Hee;Jeon, Ho-Seung;Im, Jong-Hyun;Park, Byung-Eun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.80-80
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    • 2009
  • Recently, multiferroics have attracted much attention due to their numorous potentials. In this work, we attemped to utilize the multiferroics as an alternative material for ferroelectrics. Ferroelectric materials have been stadied to ferroelectric random access memories, however, some inevitable problems prevent it from inplementation. multiferroics shows a ferroelectricity and has low process temperature $BiFeO_3$(BFO) films have good ferroelectric properties but poor leakage characterization. Thus we tried, in this work, to adopt $HfO_2$ insulating layer for metal-ferroelectric-insulator-semiconductor(MFMIS) structure to surpress to leakage current. $BiFeO_3$(BFO) thin films were fabricared by using a sol-gel method on $HfO_2/Si$ structure. Ferroelectric BFO films on a p-type Si(100)wafer with a $HfO_2$ buffer layer have been fabricated to form a metal-ferroelectric-insulator-semiconductor (MFIS) structure. The $HfO_2$ insulator were deposited by using a sol-gel method. Then, they were carried out a rapid thermal annealing(RTA) furnace at $750\;^{\circ}C$ for 10 min in $N_2$. BFO films on the $HfO_2/Si$ structures were deposited by sol-gel method and they were crystallized rapid thermal annealing in $N_2$ atomsphere at $550\;^{\circ}C$ for 5 min. They were characterized by atomic force microscopy(AFM) and Capacitance-voltage(C-V) curve.

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Effect of Ambient Temperature on the AC Electrical Treeing Phenomena in an Epoxy/Layered Silicate Nanocomposite

  • Park, Jae-Jun
    • Transactions on Electrical and Electronic Materials
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    • v.14 no.4
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    • pp.221-224
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    • 2013
  • Effects of ambient temperature on the ac electrical treeing and breakdown behaviors in an epoxy/layered silicate (1 wt%) were carried out in needle-plate electrode geometry. A layered silicate was exfoliated in an epoxy base resin,, using our ac electric field apparatus. To measure the treeing initiation and propagation, and the breakdown rate, constant alternating current (ac) of 10 kV (60 Hz) was applied to the specimen in a needle-plate electrode arrangement, at $30^{\circ}C$, $90^{\circ}C$ or $130^{\circ}C$ of insulating oil bath. At $30^{\circ}C$, the treeing initiation time and the breakdown time in the epoxy/layered silicate (1 wt%) system were 1.4 times higher than those of the neat epoxy resin. At $90^{\circ}C$ (lower than Tg), electrical treeing was initiated in 55 min, and propagated until 1,390 min at the speed of $0.35{\times}10^{-3}mm/min$, which was 4.4 times higher than that at $30^{\circ}C$; however, there was almost no further treeing propagation after 1,390 min. At $130^{\circ}C$ (higher than Tg), electrical treeing was initiated in 44 min, and propagated until 2,000 min at the speed of $0.96{\times}10^{-3}mm/min$. Typical branch type electrical treeing was obtained from the neat epoxy and epoxy/layered silicate at $30^{\circ}C$, while bush type treeing was observed out from the needle tip at $90^{\circ}C$ and $130^{\circ}C$.

Low-Temperature Electron Transport Properties of La2/3+xTiO3-δ (x = 0, 0.13) (저온에서 La2/3+xTiO3-δ (x = 0, 0.13)세라믹스의 전자전도특성)

  • Jung, Woo-Hwan
    • Korean Journal of Materials Research
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    • v.24 no.11
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    • pp.604-609
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    • 2014
  • The thermoelectric power and dc conductivity of $La_{2/3+x}TiO_{3-{\delta}}$ (x = 0, 0.13) were investigated. The thermoelectric power was negative between 80K and 300K. The measured thermoelectric power of x = 0.13 increased linearly with increased temperatures and was represented by $S_0+BT$. The x = 0 sample exhibited insulating behavior, while the x = 0.13 sample showed metallic behavior. The electric resistivity of x = 0.13 had a linear temperature dependence at high temperatures and a T3/2 dependence below about 100K. On the other hand, the electric resistivity of x = 0 has a linear relation between $ln{\rho}/T$ and 1/T in the range of 200 to 300K, and the activation energy for small polaron hopping was 0.23 eV. The temperature dependence of thermoelectric power and the resistivity of x = 0 suggests that the charge carriers responsible for conduction are strongly localized. This temperature dependence indicates that the charge carrier (x = 0) is an adiabatic small polaron. These experimental results are interpreted in terms of spin (x = 0.13) and small polaron (x = 0) hopping of almost localized Ti 3d electrons.

A Study on Electric Field Dependence of Tree Shape in Low Density Polyethylene (저밀도폴리에틸렌에서 트리 형상의 전계의존성에 관한 연구)

  • 김재환;박창옥;윤헌주
    • Fire Science and Engineering
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    • v.14 no.1
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    • pp.1-7
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    • 2000
  • Internal insulators give rise to partial discharge(PD), which cause local breakdown and even entire insulation breakdown. Treeing due to PD is one of the main causes of breakdown of the insulating materials and reduction of the insulation life. Therefore the necessity for establishing a method to diagnose the aging of insulation materials and to predict the breakdown of insulation has become important. From this viewpoint, we have studied on Electric Field dependence of tree shape in Low Density Polyethylene about treeing phenomena occurring on the high electrical field. As the result, under the reasoning that the growing of tree supposing when the inner part of tree is either dielectrec or conductor has the intermediate characteristics between dielectrec and conductor, theoretically investicated results well according with the experimental results.

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Tracking Resistance of Epoxy Mold Insulating Materials by the Rotating Wheel Dip Test (회전윤법에 의한 에폭시 몰드 절연재료의 내트래킹성 평가)

  • Cho, Han-Goo;Yun, Mun-Su;Park, Yang-Kwan
    • Proceedings of the KIEE Conference
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    • 2000.07c
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    • pp.1590-1592
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    • 2000
  • The time to tracking breakdown of treated filled specimen is longer than untreated filled specimen. And, after the RWDT, the surface of specimen by adding untreated filler appeared heavy erosion. It was found that the addition to surface treated filler. the better tracking resistance. In the RWDT, the breakdown specimen is not affected by the dry flashover voltage. despite the fact that the surface degradation of tracking test has different state on each specimen. This suggests that wet flashover voltage play an important role in evaluating of tracking and erosion on the surface degradation in tracking test. And, the flashover voltage of specimen under wet conditions are greatly affected by the salt concentration and degree of degradation by the RWDT. Because of hydrophobicity and degree of degradation by the RWDT, the flashover voltage of treated filled specimen is higher than that of untreated filled specimen. Different types of specimen may have different hydrophobicity and their surface state under contaminated conditions may not be the same. It is assumed that this phenomenon is related to the decrease in hydrophobicity of the surface of the materials.

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Degradation Diagnosis of Complex System Using Regression Analysis (희귀분석을 이용한 복합 시스템의 열화진단)

  • Kim, Seong-Hong;Song, Jae-Joo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.09a
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    • pp.60-66
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    • 2001
  • Because of internal voids in insulators give rise to partial discharge(PD), which cause local breakdown and even entire insulation breakdown. Treeing due to PD is one of the main causes of breakdown of the insulating materials and reduction of the insulation life. Therefore the necessity for establishing a method to diagnose the aging of insulation materials and to predict the breakdown of insulation has become important. From this viewpoint, our studies diagnose insulation degradation using the method of computer sensing system, which has the advantages of PD and acoustic emission(AE) sensing system. To use advantages of these two methods can be used effectively to search for treeing location and PD in some materials. In analysis method of degradation, We analyzed the PD pulse and AE pulses by regression analysis, compared to these obtained the correlation coefficient and determination coefficient by T-distribution and saw that PD and AE pulses show a similar pattern on the whole. This is in agreement with the results of the research by Yoshimura and Fujita.

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Degradation Diagnosis of Complex System Using Regression Analysis (회귀분석을 이용한 복합 시스템의 열화진단)

  • 김성홍;박재준;김재환
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.13 no.1
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    • pp.39-45
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    • 1999
  • Because of internal voids in insulators give rise to partial discharge(PD), which cause local breakdown and even entire insulation breakdown. Treeing due to PD is one of the main causes of breakdown of the insulating materials and nrluction of the insulation life. 1berefore the necessity for establishing a rrethod to diagnose the aging of insulation materials and to predict the breakdown of insulation has becorne irrportant. From this viewpoint, our studies diagnose insulation degradation using the rrethod of computer sensing system, which has PD and acoustic emission(AE) sensing system. To use advantages of these two methods can be used effectiveiy to search for treeing location and PD in sorre materials. In analysis rrethod of degradation, we analyzed the PD and AE pulses by regression analysis, corrpared to these obtained the correlation coefficient and retermination coefficient by T-distribution and saw that PD and AE pulses show a similar pattern on the whole. This has a similar teIlrency to the results of the research by Yoshimura and Fujita.Fujita.

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A Study on the Preferred Orientation Characteristics of AlN Thin Films by Reactive Evaporation Method using NH3 (NH3를 이용한 반응성 증착법에 의한 AlN 박막의 우선배향특성에 관한 연구)

  • Oh, Chang-Sup;Han, Chang-Suk
    • Korean Journal of Metals and Materials
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    • v.50 no.1
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    • pp.78-85
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    • 2012
  • Aluminum nitride(AlN) is a compound (III-V group) of hexagonal system with a crystal structure. Its Wurzite phase is a very wide band gap semiconductor material. It has not only a high thermal conductivity, a high electrical resistance, a high electrical insulating constant, a high breakdown voltage and an excellent mechanical strength but also stable thermal and chemical characteristics. This study is on the preferred orientation characteristics of AlN thin films by reactive evaporation using $NH_3$. We have manufactured an AlN thin film and then have checked the crystal structure and the preferred orientation by using an X-ray diffractometer and have also observed the microstructure with TEM and AlN chemical structure with FT-IR. We can manufacture an excellent AlN thin film by reactive evaporation using $NH_3$ under 873 K of substrate temperature. The AlN thin film growth is dependent on Al supplying and $NH_3$ has been found to be effective as a source of $N_2$. However, the nuclear structure of AlN did not occur randomly around the substrate a particle of the a-axis orientation in fast growth speed becomes an earlier crystal structure and is shown to have an a-axis preferred orientation. Therefore, reactive evaporation using $NH_3$ is not affected by provided $H_2$ amount and this can be an easy a-axis orientation method.

Magnetism of Nanocomposite Quartz Powder by use of MCR Method

  • Soh, Deawha;Lim, Byoungjae;Soh, Hyunjun;Mofa, N.N.;Ketegenov, T.A.;Mansurov, Z.A.
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2004.05a
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    • pp.113-116
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    • 2004
  • The materials showing high structure dispersion with functional properties were developed on the quartz base and those were obtained by mechano-chemical reaction technology. Depending on the processing conditions and subsequent applications the materials produced by mechano-chemical reaction show concurrently magnetic, dielectric and electrical properties. The obtained magnetic-electrical powders classified by aggregate complex of their features as segnetomagnetics, containing a dielectric material as a carrying nucleus, particularly the quartz on that surface one or more layers of different compounds were synthesized having thickness up to 10~50 nm showing magnetic, electrical properties and others. The similarity of the structure of surface layers of quartz particles subjected to mechano-chemical processing and nano-structure cluspol (clusters in a polymer matrics) material was also confirmed by the fact that the characteristics of ferromagnetic quartz of insulating nano-composite powder were changed with time, after its preparing process was completed. The magnetic permeability of the sample was decreasing within first two months down by 15~20 %. Then, the magnetic characteristics were almost stabilized steadily and continuously. The observed changes were related with defective structure of the particles, elastic stress relief, and changes of electron density and magnetic moment in deformation zones. This process of stabilization of the investigated properties could be intensified by the thermal annealing heat treatment in short time period of the nano-composite quartz powders at the temperature ranges of 100~15$0^{\circ}C$.

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