• Tribology and Lubricants
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• v.12 no.4
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• pp.52-59
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• 1996

The results of the electrical contact conductivity of multi-contact spots accounting the surface roughness and the non-conductive films of different origins such as air, water, cutting oil, and machining oil are presented. The array of metal spheres compressed between two flat plates has been used for simulation of the contact behavior of multiple contact of solids, under normal loading. Measurement of electrical contact resistance has been made using the equipment providing the adequate accuracy in the range of micro Ohms. The data on electrical contact resistance have been compared with theoretical predictions using the multiple contact model of constriction resistance. The effect of single spot number and array on conductivity of contact has been evaluated. The results of the experiments show that the contact resistance are closely related to the number of loading cycles, form of surface roughness, and presence of non-conductive films that reduce the size of the real electrical contact spots.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1013-1015
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• 1995

The electrical properties of Al/TiN/Ti contact according to post anneal ins conditions are investigated at submicron contacts. $N^+$ contact resistance increases with increasing alloy temperature while $P^+$ contact resistance slightly decreases. The contact tentage current increases wi th increasing alloy temperature for both $N^+$ and $P^+$ contacts. The contact resistance and leakage current of $N^+$ contact increases with increasing alloy tide. $P^+$ contact resistance decreases with increasing alloy time but $P^+$ contact tentage current increases. The contact resistance and contact leakage current increases with increasing alloy cycles for both $N^+$ and $P^+$ contacts.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1069-1071
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• 1995

The electrical properties of Al/TiN/Ti contact are investigated at submicron contacts. The contact resistance and contact leakage current are dependent on metallization, surface dopant concentration, semiconductor surface treatment and contact plug ion implantation. In this paper, the contact resistance and contact leakage current are studied according to surface dopant concentration, semiconductor surface treatment and contact plug ion implantation at 0.8 micron contact. The contact resistance and contact leakage current increases with increasing substrate ion concentration. HF cleaning represents high contact resistance but low contact leakage current while CDE cleaning represents low contact resistance but high contact leakage current. Contact plug ion implantation decreases contact resistance but increases contact leakage current. Specially, RTA represents good electrical properties.

• Proceedings of the KSME Conference
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• 2004.11a
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• pp.404-409
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• 2004

The electrical contact resistance is here estimated using the multiscale microcontact distribution of elastic contact between rough surfaces, simulated from the Archard's model, and the electrical contact conduction theory suggested by Greenwood. These analysis confirms that the electrical contact resistance is converged to a values, larger than would be obtained if the contact spots were widely separated and hence independent. In multiscale process, the base potential is close to the value of the potential difference between the contact surface and the extremity of body, suggesting a possibility to obtain the multiscale electrical contact resistance relations.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.294.2-294.2
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• 2016

Graphene, a sigle atomic layered structure of graphite, has drawn many scientific interests for attractive future electronics and optoelectronics beyond silicon-based technology because of its robust physical, optical, and electrical properties. But high metal-graphene contact resistance prevents the successful integration of high speed graphene devices and circuits, although pristine graphene is known to have a novel carrier transport property. Meanwhile, in the recently reported metal-graphene contact studies, there are many attempts to reduce the metal-graphene contact resistance, such as doping and one-dimensional edge contact. However, there is a lack of quantitative analysis of the edge contact scheme through variously designed patterns with different metal contact. We first investigate the effets of edge contact (metal-graphene interface) on the contact resistance in terms of edge pattern design through patterning (photolithography + plasma etching) and electral measurements. Where the contact resistance is determined using the transfer length method (TLM). Finally, we research the role of metal-kind (Palladium, Copper, and Tianium) on the contact resistance through the edge-contacted devices, eventually minimizing contact resistance down to approximately $23{\Omega}{\cdot}{\mu}m$ at room temperature (approximately $19{\Omega}{\cdot}{\mu}m$ at 100 K).

• Carbon letters
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• v.14 no.3
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• pp.171-174
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• 2013

The high quality contact between graphene and the metal electrode is a crucial factor in achieving the high performance of graphene transistors. However, there is not sufficient research about contact resistance reduction methods to improve the junction of metal-graphene. In this paper, we propose a new method to decrease the contact resistance between graphene and metal using directly grown graphene over a metal surface. The study found that the grown graphene over copper, as an intermediate layer between the copper and the transferred graphene, reduces contact resistance, and that the adhesion strength between graphene and metal becomes stronger. The results confirmed the contact resistance of the metal-graphene of the proposed structure is nearly half that of the conventional contact structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.146-147
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• 2007

A universal four-point contact measurement method, has an advantage of non-existence of contact resistance, is demonstrated by the experiments with carbon nanotubes and ZnO nanowire. Ti/Au and Pt are tried to compare the influence of contact resistance between two different metals. These metals are selected to make Ohmic contact and Schottky contact originated from their different work functions. For precise experiments, Ti/Au and Pt are separately evaporated to form double 'four-point contact electrodes' on CNTs or ZnO, and the voltage-current characteristics are measured. This method can be applied to universal resistivity measurement for nanotubes and nanowires.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.2
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• pp.115-119
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• 2015

The power relay can be easily controlled with high voltage and current through the contacts. For this reason, has become widely used range in a variety of applications. In this study, we measured the contact resistance between the bouncing phenomenon of contact due to the change of load. The results of the experiment, the contact resistance increases with the deterioration of the contact, it is possible to predict the life of the relay contacts through the contact resistance. And relay bounce duration time have occurred in 3.5 ms or less. In addition, it is possible to use the results to design an arc suppression circuit device.

• International Journal of Precision Engineering and Manufacturing
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• v.5 no.3
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• pp.5-10
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• 2004

Electric contacts serve the purpose of transmitting electric signals across two conducting components. In this paper, the effects of contact conditions such as surface roughness, oxidation, and contamination were investigated with respect to electrical resistance variation of a connector in a direct current circuit. Such change in the electrical resistance is particularly important for low power circuits. The experimental results showed that compared with the effects of contact surface scratch or oxidation, the effect of contamination on the resistance variation was the most significant. In order to minimize failure due to electrical resistance change at the contact region, proper sealing to prevent contamination from entering the interface is needed.

• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.178-182
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• 1991

Contact resistance and contact leakage current of the $Al/TiSi_2/Si$ system are investigated for $N^+\;and\;P^+$ junctions. Titanium disilicide is one of the most common silicides because of its thermal stability, ability, to form selective formation and low resistivity. In this paper, the effect of RTA temperature and Junction implant dose are characterized. The $TiSi_2$ contact resistance to $N^+$ silicon is lower than that of Al to $N^+$ silicon, but $TiSi_2$ of contact resistance to $P^+$ silicon is higher than that of Al to $P^+$ silicon. The $TiSi_2$ of contact leakage current to $N^+\;and\;P^+$ silicon is similar to that of Al contact.