• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.92-94
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• 2004

In this investigation, 3C-SiC film deposited $1000{\AA}$ on the p-type silicon wafer which is resistance $0{\sim}30[{\Omega}{\cdot}cm]$ by PECVD (Plasma-enhanced Chemical Vapor Deposition). We deposited Cr, Ta, Pt in front of wafer to utilize DC-sputter for $500{\AA}$, the SiC Schottky diode made from Al ohmic contact about $4000{\AA}$, and to each different temperature which annealing in Ar atmosphere, we had forward characteristic analysis along to annealing temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.232-233
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• 2005

The Surface of semi-conductive silicone rubber was treated by oxygen plasma to improve adhesion and electric performance in joints between insulating and semi-conductive silicone materials. Surface characterizations were assessed using contact angle measurement and Fourier transform infrared spectroscope (FTIR). Adhesion level was understood from T-peel tests between plasma treated semi-conductive and insulating material. Electrical breakdown strength was measured to understand the charge of electrical performance. From the results, the oxygen plasma treatment produces a significant increase in function group of containing oxygen which can be mainly ascribed to the creation of carbonyl groups on the silicone surface from the strength were improved. Therefore it is concluded then plasma treatment leads to decrease voids originating form poor adhesive, and the improve the adhesion in silicone interface. So we could obtain higher electrical design level of silicone material used for electrical apparatus using oxygen plasma treatment.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1637-1639
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• 2001

Air arc interruption used in low rated voltage breaker, ACB and MCCB, have used the arc chamber composed of metal plates and insulating laminates which supposed these mechanically. and geometry and materials of arc chamber are very different by breaker manufacturer. These breakers have required to be smaller and to interrupt higher current by user. therefore the arc chamber geometry and material in breaker have been small, complex and various. The purpose of this study is to examine the effects of insulating laminates and contact materials on air arc interruption. Contacts were surrounded by a rectangle chamber of insulating laminates. Contact concoctions were composed of AgW, AgCdO that have used in low rated voltage breaker, and insulating laminates were polyester, epoxy. We found strong dependance of arc voltage on insulating material. The ablated vapor on polyester increased arc voltage that was useful in air arc interruption.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.666-670
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• 2004

VLSI 소자에서 design rule(D/R)이 작아져 각 단위 Pattern의 size가 작아짐에 따라 aspect ratio가 커지게 되었다. 산화막 contact etch를 하는데 있어 산화막 측벽을 보호하는데, 이러한 보호막은 주로 fluoro-carbon 계열의 polymer precursor들이 사용된다. Aspect ratio(A/R)가 5 이하일 때에는 측벽의 보호막에 의한 바닥 변형이 문제가 되지 않으나, 10 이상의 A/R를 가진 contact에서는 크기가 줄고, 모양이 불균형하게 변하는 바닥 변형을 쉴게 관찰할 수 있다. 이러한 바닥 변형이 커지면 contact 저항이 높아지는 것은 물론이고, 심하게는 하부 pattern과 overlap 불량을 유발할 수 있다. 본 논문에서는 바닥변형을 일으키는 원인을 분석하고 fluoro-carbon 계열의 polymer precursor의 종류$(C_4_F6\;vs.\;C_3F_8)$에 따른 polymer증착 상태 확인 및 pattern비대칭에 따른 바닥 변형의 고찰과 plasma etching 시 H/W 변형을 통해 바닥 변형이 거의 없는 조건을 찾아낼 수 있었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.825-831
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• 2006

As an increase of chip complexity and level of chip integration, chip input/output (I/O) pad pitches are also drastically reduced. With arrival of high complexity SoC (System on Chip) and SiP (System in Package) products, conventional horizontal type probe card showed its limitation on probing density for wafer level test. To enhance probing density, we proposed new vertical type probe card that has the $70{\mu}m$ probe needle with tungsten wire in $80{\mu}m$ micro-drilled hole in ceramic board. To minimize alignment error, micro-drilling conditions are optimized and epoxy-hardening conditions are also optimized to minimize planarity changes. To apply wafer level test for target devices (T5365 256M SDRAM), designed probe card was characterized by probe needle tension for test, contact resistance measurement, leakage current measurement and the planarity test. Compare to conventional probe card with minimum pitch of $50{\sim}125{\mu}m\;and\;2\;{\Omega}$ of average contact resistance, designed probe card showed only $22{\mu}$ of minimum pitch and $1.5{\Omega}$ of average contact resistance. And also, with the nature of vertical probing style, it showed comparably small contact scratch and it can be applied to bumping type chip test.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04a
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• pp.25-28
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• 2002

Contact type Ic measurement system is needed to measure Ic continuously for long Bi-2223 tapes. Voltage and current terminals were designed several shapes for 4-probe method Ic measurement. Voltage terminals were made with brass and current terminals were made with Cu. We used 2 kinds of Bi-2223 tapes with different strength. When we measured Ic of Bi-2223 tape with Ag-Mg sheath, The proper weight was 0.3 kg and sharp pin type was better. according to voltage terminal shape and load. In case of Bi-2223 tape with Ag-Mn sheath, the proper terminal weight was 4 kg and sharp pin type was bad. It was possible to make continuous contact type Ic measurement system because We could get proper data - terminal shapes and loads - through these experiments.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.868-871
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• 2008

We propose an optical-based measuring instrument of catenary system in electric railway. This system was made to utilize line scan camera as inspecting system to measure the stagger and height of overhead contact wire in railway and composed with optical type source and FPGA-based image acquisition system with PCI slot. Vision acquisition software has been used for the application to programming interface for image acquisition, display, and storage with a frequency of sampling. To check the validity of our approach for the intended application, we monitored height and stagger in the overhead wire of a high-speed catenary system in Korea. The proposed optical-based measuring instrument to measure the contact wire geometry such as the hight and stagger shows promising on-field applications for online condition motoring. We expect that a new generation of real-time instruments with demanding various conditions motoring requirement in railway can be easily integrated into optical-based measuring instrument system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.543-544
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• 2006

This paper describes a simple real-time monitoring system for use in measurement subsystem of contact wire and geometry of overhead contact wire in electric railway. The system has been consists of a high speed CMOS camera with resolution $1024\;{\times}\;1280$ pixels, line type laser source with a power equal to 300 mW, and PC-based image acquisition system with PCI Express slot. National instrument LabVIEW (8.0) and vision acquisition software have been used in application programming interface for image acquisition, display, and storage with a frequency of sampling of 500 acquisitions per second.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.6
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• pp.507-511
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• 2019

The purpose of an electric railway system contact wire is to supply electric energy to trains through a contacted pantograph. This energy is then converted into mechanical energy. Recent developments in overhead contact lines include the increase in the tension force up to 34 kN according to train speeds that reach up to 400 km/h with a verified safety. Rigid conductor catenary (R-Bar) for high speeds of up to 250 km/h have been developed in tunnels to save on construction costs. This is significant because minor defects in R-bars in aspects, such as height and stagger affect installation conditions. In this study, we propose the use of a detector that measures the static characteristics to reduce the R-bar installation errors. This detector has been developed to measure the height and stagger of the contact wire using video images.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.813-816
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• 2002

We investigate the junction between CdZnTe and a variety of metals with the aim of determining whether the choice of metal can improve the performance of X-ray image detectors, in particular minimizing the dark current. The samples consist of $5{\mu}m$ thick CdZnTe with top electrodes formed from In, Al, and Au. For each metal, current transients following application of valtages from -10V to 10V are measured for up to 1 hour. We find that dark currents depending on the metal used. The current is controlled by hole injection at the metal-CdZnTe junction and there is consistent trend with the metal's work function possibly and it seems that metal to CdZnTe layer junction is ohmic contact.