• Title/Summary/Keyword: Electrical contact material

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A Study on the Errors for the Improved Version of the Virtual Transmission-Line Model (개선된 가상의 전송선로 모델의 오차 연구)

  • 조유선;김세윤;김영식
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.13 no.10
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    • pp.971-981
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    • 2002
  • An open-ended coaxial probe method has been considered as one of effective tools for measuring electrical properties of its contacted material without shaping and fitting. The measured reflection coefficient at the probe's end is able to convert into the corresponding complex permittivity by employing the improved version of virtual transmission-line model Presented by our lab already. But the error of complex permittivity converted by equivalent model increases as the operating frequency ascends high. The errors of complex permittivity in the open-ended coaxial probe can be yielded compositively by the imperfect contact or probe, manufacture error of probe and complex permittivity error of reference material etc. Therefore it is necessary to limit the problem to identify the error causes in high frequency. In this paper, the errors which are resulted from the measurement of reflection coefficient are removed by using the FDTD(Finite-Difference Time-Domain) method, the error causes are limited the conversion model problem. And the error study of the improved conversion model is performed from several viewpoints. At first, the local minimum of parameter to be calculated by the iteration method in the conversion model is checked. At second, the modeling of the equivalent model is checked in the frequency range. From this study, we know the valid range of the improved conversion model.

Evaluations of Si based ternary anode materials by using RF/DC magnetron sputtering for lithium ion batteries

  • Hwang, Chang-Muk;Park, Jong-Wan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.302-303
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    • 2010
  • Generally, the high energy lithium ion batteries depend intimately on the high capacity of electrode materials. For anode materials, the capacity of commercial graphite is unlike to increase much further due to its lower theoretical capacity of 372 mAhg-1. To improve upon graphite-based negative electrode materials for Li-ion rechargeable batteries, alternative anode materials with higher capacity are needed. Therefore, some metal anodes with high theoretic capacity, such as Si, Sn, Ge, Al, and Sb have been studied extensively. This work focuses on ternary Si-M1-M2 composite system, where M1 is Ge that alloys with Li, which has good cyclability and high specific capacity and M2 is Mo that does not alloy with Li. The Si shows the highest gravimetric capacity (up to 4000mAhg-1 for Li21Si5). Although Si is the most promising of the next generation anodes, it undergoes a large volume change during lithium insertion and extraction. It results in pulverization of the Si and loss of electrical contact between the Si and the current collector during the lithiation and delithiation. Thus, its capacity fades rapidly during cycling. Si thin film is more resistant to fracture than bulk Si because the film is firmly attached to the substrate. Thus, Si film could achieve good cycleability as well as high capacity. To improve the cycle performance of Si, Suzuki et al. prepared two components active (Si)-active(Sn, like Ge) elements film by vacuum deposition, where Sn particles dispersed homogeneously in the Si matrix. This film showed excellent rate capability than pure Si thin film. In this work, second element, Ge shows also high capacity (about 2500mAhg-1 for Li21Ge5) and has good cyclability although it undergoes a large volume change likewise Si. But only Ge does not use the anode due to its costs. Therefore, the electrode should be consisted of moderately Ge contents. Third element, Mo is an element that does not alloys with Li such as Co, Cr, Fe, Mn, Ni, V, Zr. In our previous research work, we have fabricated Si-Mo (active-inactive elements) composite negative electrodes by using RF/DC magnetron sputtering method. The electrodes showed excellent cycle characteristics. The Mo-silicide (inert matrix) dispersed homogeneously in the Si matrix and prevents the active material from aggregating. However, the thicker film than $3\;{\mu}m$ with high Mo contents showed poor cycling performance, which was attributed to the internal stress related to thickness. In order to deal with the large volume expansion of Si anode, great efforts were paid on material design. One of the effective ways is to find suitably three-elements (Si-Ge-Mo) contents. In this study, the Si based composites of 45~65 Si at.% and 23~43 Ge at.%, and 12~32 Mo at.% are evaluated the electrochemical characteristics and cycle performances as an anode. Results from six different compositions of Si-Ge-Mo are presented compared to only the Si and Ge negative electrodes.

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Microstructure and EDM Processing of $MoSi_2$ Intermetallic Composite ($MoSi_2$ 금속간화합물 복합재료의 미세구조와 방전가공특성)

  • Yoon, Han-Ki;Lee, Sang-Pill;Yoon, Kyong-Wok;Kim, Dong-Hyun
    • Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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    • 2002.05a
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    • pp.23-28
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    • 2002
  • This paper describes the machining characteristics of the $MoSi_2$ based composites by electric discharge drilling with various tubular electrodes, besides, Hardness characteristics and microstructures of $Nb/MoSi_2$ laminate composites were evaluated from the variation of fabricating conditions such as preparation temperature, applied pressure and pressure holding time. $MoSi_2$ -based composites has been developed in new materials for jet engine of supersonic-speed airplanes and gas turbine for high- temperature generator. Achieving this objective may require new hard materials with high strength and high temperature-resistance. However, With the exception of grinding, traditional machining methods are not applicable to these new materials. Electric discharge machining (EDM) is a thermal process that utilizes a spark discharge to melt a conductive material, the tool electrode being almost non-unloaded, because there is no direct contact between the tool electrode and the workpiece. By combining a nonconducting ceramics with more conducting ceramic it was possible to raise the electrical conductivity. From experimental results, it was found that the lamination from Nb sheet and $MoSi_2$ powder was an excellent strategy to improve hardness characteristics of monolithic $MoSi_2$. However, interfacial reaction products like (Nb, Mo)$SiO_2$ and $Nb_2Si_3$ formed at the interface of $Nb/MoSi_2$ and increased with fabricating temperature. $MoSi_2$ composites which a hole drilling was not possible by the conventional machining process, enhanced the capacity of ED-drilling by adding $NbSi_2$ relative to that of SiC or $ZrO_2$ reinforcements.

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Characteristics of LSC coated Metallic Interconnect for Solid Oxide Fuel Cell (LSC가 코팅된 고체산화물 연료전지용 금속연결재의 특성 연구)

  • Pyo, Seong-Soo;Lee, Seung-Bok;Lim, Tak-Hyoung;Park, Seok-Joo;Song, Rak-Hyun;Shin, Dong-Ryul
    • Korean Chemical Engineering Research
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    • v.48 no.2
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    • pp.172-177
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    • 2010
  • This study reports the high-temperature oxidation kinetics, ASR(area specific resistance), and interfacial microstructure of metallic interconnects coated with conductive oxides in oxidation atmosphere at $800^{\circ}C$, The conductive material LSC($La_{0.8}Sr_{0.2}CoO_3$, prepared by Solid State Reaction) was coated on the Crofer22APU. The contact behavior of coating layer/metal substrate was increased by sandblast. The electrical conductivity of the LSC coated Crpfer22APU was measured by a DC two probe four wire method for 4000hr, in air at $800^{\circ}C$. Microstructure and composition of the coated layer interface were investigated by SEM/EDS. These results show that a coated LSC layer prevents the formation and growth of oxide scale such as $Cr_2O_3$ and enhances the long-term stability and electrical performance of metallic interconnects for SOFCs.

Electrochemical Characterization of Anti-Corrosion Film Coated Metal Conditioner Surfaces for Tungsten CMP Applications (텅스텐 화학적-기계적 연마 공정에서 부식방지막이 증착된 금속 컨디셔너 표면의 전기화학적 특성평가)

  • Cho, Byoung-Jun;Kwon, Tae-Young;Kim, Hyuk-Min;Venkatesh, Prasanna;Park, Moon-Seok;Park, Jin-Goo
    • Journal of the Microelectronics and Packaging Society
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    • v.19 no.1
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    • pp.61-66
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    • 2012
  • Chemical Mechanical Planarization (CMP) is a polishing process used in the microelectronic fabrication industries to achieve a globally planar wafer surface for the manufacturing of integrated circuits. Pad conditioning plays an important role in the CMP process to maintain a material removal rate (MRR) and its uniformity. For metal CMP process, highly acidic slurry containing strong oxidizer is being used. It would affect the conditioner surface which normally made of metal such as Nickel and its alloy. If conditioner surface is corroded, diamonds on the conditioner surface would be fallen out from the surface. Because of this phenomenon, not only life time of conditioners is decreased, but also more scratches are generated. To protect the conditioners from corrosion, thin organic film deposition on the metal surface is suggested without requiring current conditioner manufacturing process. To prepare the anti-corrosion film on metal conditioner surface, vapor SAM (self-assembled monolayer) and FC (Fluorocarbon) -CVD (SRN-504, Sorona, Korea) films were prepared on both nickel and nickel alloy surfaces. Vapor SAM method was used for SAM deposition using both Dodecanethiol (DT) and Perfluoroctyltrichloro silane (FOTS). FC films were prepared in different thickness of 10 nm, 50 nm and 100 nm on conditioner surfaces. Electrochemical analysis such as potentiodynamic polarization and impedance, and contact angle measurements were carried out to evaluate the coating characteristics. Impedance data was analyzed by an electrical equivalent circuit model. The observed contact angle is higher than 90o after thin film deposition, which confirms that the coatings deposited on the surfaces are densely packed. The results of potentiodynamic polarization and the impedance show that modified surfaces have better performance than bare metal surfaces which could be applied to increase the life time and reliability of conditioner during W CMP.

Simultaneous Transfer and Patterning of CVD-Grown Graphene with No Polymeric Residues by Using a Metal Etch Mask

  • Jang, Mi;Jeong, Jin-Hyeok;Trung, T.Q.;Lee, Nae-Eung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.642-642
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    • 2013
  • Graphene, two dimensional single layer of carbon atoms, has tremendous attention due to its superior property such as high electron mobility, high thermal conductivity and optical transparency. Especially, chemical vapor deposition (CVD) grown graphene has been used as a promising material for high quality and large-scale graphene film. Unfortunately, although CVD-grown graphene has strong advantages, application of the CVD-grown graphene is limited due to ineffective transfer process that delivers the graphene onto a desired substrate by using polymer support layer such as PMMA(polymethyl methacrylate). The transferred CVD-grown graphene has serious drawback due to remaining polymeric residues generated during transfer process, which induces the poor physical and electrical characteristics by a p-doping effect and impurity scattering. To solve such issue incurred during polymer transfer process of CVD-grown graphene, various approaches including thermal annealing, chemical cleaning, mechanical cleaning have been tried but were not successful in getting rid of polymeric residues. On the other hand, lithographical patterning of graphene is an essential step in any form of microelectronic processing and most of conventional lithographic techniques employ photoresist for the definition of graphene patterns on substrates. But, application of photoresist is undesirable because of the presence of residual polymers that contaminate the graphene surface consistent with the effects generated during transfer process. Therefore, in order to fully utilize the excellent properties of CVD-grown graphene, new approach of transfer and patterning techniques which can avoid polymeric residue problem needs to be developed. In this work, we carried out transfer and patterning process simultaneously with no polymeric residue by using a metal etch mask. The patterned thin gold layer was deposited on CVD-grown graphene instead of photoresists in order to make much cleaner and smoother surface and then transferred onto a desired substrate with PMMA, which does not directly contact with graphene surface. We compare the surface properties and patterning morphology of graphene by scanning electron microscopy (SEM), atomic force microscopy(AFM) and Raman spectroscopy. Comparison with the effect of residual polymer and metal on performance of graphene FET will be discussed.

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Plasma Surface Modification of Graphene and Combination with Bacteria Cellulose (Graphene의 플라즈마 표면 개질과 박테리아 셀룰로오스와의 결합성 검토)

  • Yim, Eun-Chae;Kim, Seong-Jun;Oh, Il-Kwon;Kee, Chang-Doo
    • Korean Chemical Engineering Research
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    • v.51 no.3
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    • pp.388-393
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    • 2013
  • The study was focused to evaluate the possibility for combination membrane of bacterial cellulose (BC) and graphene with high electrical properties. BC with natural polymer matrix was known to have strong physical strength. For the combination of graphene with BC, the surface of graphene was modified with oxygen plasma by changing strength and time of radio waves in room temperature. Water contact angle of modified graphene grew smaller from $130^{\circ}$ to $12^{\circ}$. XPS analysis showed that oxygen content after treatment increased from 2.99 to 10.98%. Damage degree of graphene was examined from $I_D/I_G$ ratio of Raman analysis. $I_D/I_G$ ratio of non-treated graphene (NTG) was 0.11, and 0.36 to 0.43 in plasma treated graphene (PTG), increasing structural defects of PTG. XRD analysis of PTG membrane with BC was $2{\theta}$ same to BC only, indicating chemically combined membrane. In FT-IR analysis, 1,000 to 1,300 $cm^{-1}$ (C=O) peak indicating oxygen radicals in PTG membrane had formed was larger than NTG membrane. The results suggest that BC as an alternation of plastic material for graphene combination has a possibility in some degree on the part like transparent conductive films.

A Study of Mo Back Electrode for CIGSe2 Thin Film Solar Cell (CIGSe2 박막태양전지용 Mo 하부전극의 물리·전기적 특성 연구)

  • Choi, Seung-Hoon;Park, Joong-Jin;Yun, Jeong-Oh;Hong, Young-Ho;Kim, In-Soo
    • Journal of the Korean Vacuum Society
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    • v.21 no.3
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    • pp.142-150
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    • 2012
  • In this Study, Mo back electrode were deposited as the functions of various working pressure, deposition time and plasma per-treatment on sodalime glass (SLG) for application to CIGS thin film solar cell using by DC sputtering method, and were analyzed Mo change to $MoSe_2$ layer through selenization processes. And finally Mo back electrode characteristics were evaluated as application to CIGS device after Al/AZO/ZnO/CdS/CIGS/Mo/SLG fabrication. Mo films fabricated as a function of the working pressure from 1.3 to 4.9mTorr are that physical thickness changed to increase from 1.24 to 1.27 ${\mu}m$ and electrical characteristics of sheet resistance changed to increase from 0.195 to 0.242 ${\Omega}/sq$ as according to the higher working pressure. We could find out that Mo film have more dense in lower working pressure because positive Ar ions have higher energy in lower pressure when ions impact to Mo target, and have dominated (100) columnar structure without working pressure. Also Mo films fabricated as a function of the deposition time are that physical thickness changed to increase from 0.15 to 1.24 ${\mu}m$ and electrical characteristics of sheet resistance changed to decrease from 2.75 to 0.195 ${\Omega}/sq$ as according to the increasing of deposition time. This is reasonable because more thick metal film have better electrical characteristics. We investigated Mo change to $MoSe_2$ layer through selenization processes after Se/Mo/SLG fabrication as a function of the selenization time from 5 to 40 minutes. $MoSe_2$ thickness were changed to increase as according to the increasing of selenization time. We could find out that we have to control $MoSe_2$ thickness to get ohmic contact characteristics as controlling of proper selenization time. And we fabricated and evaluated CIGS thin film solar cell device as Al/AZO/ZnO/CdS/CIGS/Mo/SLG structures depend on Mo thickness 1.2 ${\mu}m$ and 0.6 ${\mu}m$. The efficiency of CIGS device with 0.6 ${\mu}m$ Mo thickness is batter as 9.46% because Na ion of SLG can move to CIGS layer more faster through thin Mo layer. The adhesion characteristics of Mo back electrode on SLG were improved better as plasma pre-treatment on SLG substrate before Mo deposition. And we could expect better efficiency of CIGS thin film solar cell as controlling of Mo thickness and $MoSe_2$ thickness depend on Na effect and selenization time.

Application of Environmental Friendly Bio-adsorbent based on a Plant Root for Copper Recovery Compared to the Synthetic Resin (구리 회수를 위한 식물뿌리 기반 친환경 바이오 흡착제의 적용 - 합성수지와의 비교)

  • Bawkar, Shilpa K.;Jha, Manis K.;Choubey, Pankaj K.;Parween, Rukshana;Panda, Rekha;Singh, Pramod K.;Lee, Jae-chun
    • Resources Recycling
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    • v.31 no.4
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    • pp.56-65
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    • 2022
  • Copper is one of the non-ferrous metals used in the electrical/electronic manufacturing industries due to its superior properties particularly the high conductivity and less resistivity. The effluent generated from the surface finishing process of these industries contains higher copper content which gets discharged in to water bodies directly or indirectly. This causes severe environmental pollution and also results in loss of an important valuable metal. To overcome this issue, continuous R & D activities are going on across the globe in adsorption area with the purpose of finding an efficient, low cost and ecofriendly adsorbent. In view of the above, present investigation was made to compare the performance of a plant root (Datura root powder) as a bio-adsorbent to that of the synthetic one (Tulsion T-42) for copper adsorption from such effluent. Experiments were carried out in batch studies to optimize parameters such as adsorbent dose, contact time, pH, feed concentration, etc. Results of the batch experiments indicate that 0.2 g of Datura root powder and 0.1 g of Tulsion T-42 showed 95% copper adsorption from an initial feed/solution of 100 ppm Cu at pH 4 in contact time of 15 and 30 min, respectively. Adsorption data for both the adsorbents were fitted well to the Freundlich isotherm. Experimental results were also validated with the kinetic model, which showed that the adsorption of copper followed pseudo-second order rate expression for the both adsorbents. Overall result demonstrates that the bio-adsorbent tested has a potential applicability for metal recovery from the waste solutions/effluents of metal finishing units. In view of the requirements of commercial viability and minimal environmental damage there from, Datura root powder being an effective material for metal uptake, may prove to be a feasible adsorbent for copper recovery after the necessary scale-up studies.

Fabrication and Characterization of Transparent Conductive Film based on Bacterial Cellulose (Bacterial cellulose를 기반으로 하는 투명전도성막의 제조 및 특성평가)

  • Yim, Eun-Chae;Kim, Seong-Jun;Kee, Chang-Doo
    • Korean Chemical Engineering Research
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    • v.51 no.6
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    • pp.766-773
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    • 2013
  • A transparent film was fabricated based on bacterial cellulose (BC), BC has excellent physical strength and stability at high temperature and it is an environmental friendly flexible material. In order to improve the conductivity, silver nanowire (AgNW) and/or graphene were introduced to the BC membrane. The aspect ratio of the AgNW synthesized in this study was 214, with a length of $15{\mu}m$ and width of 70 nm. The higher aspect ratio improved the conductivity by reducing the contact resistance. The thermal and electrical properties of 7 types of films prepared were investigated. Each film was fabricated with rectangular shape ($2mm{\times}2mm{\times}50{\mu}m$). The films were scored with a net shape by a knife, and filled with AgNW and graphene to bestow conductivity. The film filled with AgNW showed favorable electrical characteristics with a thickness of $350{\mu}m$, electron concentration of $1.53{\times}10^{19}$, electron mobility of $6.63{\times}10^5$, and resistivity of 0.28. The film filled with graphene had a thickness of $360{\mu}m$, electron concentration of $7.74{\times}10^{17}$, electron mobility of 0.17, and resistivity of 4.78. The transmittances at 550 nm were 98.1% and 80.9%, respectively. All the films were able to light LEDs bulbs although their brightness differed. A thermal stability test of the BC and PET films at $150{\pm}5^{\circ}C$ showed that the BC film was more stable, whereas the PET film was quickly banded. From these results, it was confirmed that there it is possible to fabricate new transparent conductivity films based on BC.