• 한국컴퓨터산업교육학회:학술대회논문집
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• 2003.11a
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• pp.79-82
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• 2003

The electrothermal simulation of high voltage LIGBT(Lateral Insulated Gate Bipolar Transistor) in thin Silicon on insulator (SOI) and Silicon on sapphire (SOS) for thermal conductivity and sink is performed by means of MEDICI. The finite element simulations demonstrate that the thermal conductivity of the buried oxide is an important parameter for the modeling of the thermal behavior of silicon-on-insulator (SOI) devices. In this paper, using for SOI LIGBT, we simulated electrothermal for device that insulator layer with $SiO_2$ and $Al_2O_3$ at before and after latch up to measured the thermal conductivity and temperature distribution of whole device and verified that SOI LIGBT with $Al_2O_3$ insulator had good thermal conductivity and reliability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.234-237
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• 1996

The amorphous chalogenide semiconductors are new material in semiconductor physics. Their properties, especially electronic and optical properties are main motives for device application. Amorphous As$_{10}$Ge$_{15}$ Te$_{75}$material has the stable ac conductivity at high frequency and the dc memory switching property. At higher frequency than 10MHz, ac conductivity of As$_{10}$Ge$_{15}$ Te$_{75}$ thin film is much higher than below frequency and independent of temperature and frequency. If the dc voltages are applied between edges of thin film, one can see the dc memory switching phenomenon, in other words the dc conductivity increases quite a few of magnitude after the threshold voltage is applied. Using the stable ac conductivity at high frequency and the increase of conductivity after dc memory switching, As$_{10}$Ge$_{15}$ Te$_{75}$thin film is considered as new material for microwave switch devices.vices.es.vices.

• 한국지구물리탐사학회:학술대회논문집
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• 2007.06a
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• pp.1-6
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• 2007

Two impedance imaging systems of multi-frequency electrical impedance tomography (MFEIT) and magnetic resonance electrical impedance tomography (MREIT) are described. MFEIT utilizes boundary measurements of current-voltage data at multiple frequencies to reconstruct cross-sectional images of a complex conductivity distribution (${\sigma}+i{\omega}{\varepsilon}$) inside the human body. The inverse problem in MFEIT is ill-posed due to the nonlinearity and low sensitivity between the boundary measurement and the complex conductivity. In MFEIT, we therefore focus on time- and frequency-difference imaging with a low spatial resolution and high temporal resolution. Multi-frequency time- and frequency-difference images in the frequency range of 10 Hz to 500 kHz are presented. In MREIT, we use an MRI scanner to measure an internal distribution of induced magnetic flux density subject to an injection current. This internal information enables us to reconstruct cross-sectional images of an internal conductivity distribution with a high spatial resolution. Conductivity image of a postmortem canine brain is presented and it shows a clear contrast between gray and white matters. Clinical applications for imaging the brain, breast, thorax, abdomen, and others are briefly discussed.

• Journal of Sensor Science and Technology
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• v.23 no.4
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• pp.234-237
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• 2014

In this paper, a copper foil-thick grapheme (thin graphite sheet)-copper foil structure is reported to achieve mechanically strong and high thermal conductive layer suitable for heat spreading components. Since graphene provides much higher thermal conductivity than copper, thick graphene embedded copper layer can achieve higher effective thermal conductivity which is proportional to graphene/copper thickness ratio. Since copper is nonreactive with carbon material which is graphene, chromium is used as adhesion layer to achieve copper-thick graphene-copper bonding for graphene embedded copper layer. Both sides of thick graphene were coated with chromium as an adhesion layer followed by copper by sputtering. The copper foil was bonded to sputtered copper layer on thick graphene. Angstrom's method was used to measure the thermal conductivity of fabricated copper-thick graphene-copper structure. The thermal conductivity of the copper-thick graphene-copper structures is measured as $686W/m{\cdot}K$ which is 1.6 times higher than thermal conductivity of pure copper.

• Journal of Korea Foundry Society
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• v.34 no.5
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• pp.151-155
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• 2014

The relatively low conductivity of conventional Mg-Al alloys often limits their areas of application. Therefore, several attempts to develop new high-conductivity magnesium alloys have been made recently. In this research, A Ce-rich rare-earth (RE)material and zinc were added to magnesium which contained no aluminum. As the RE and Zn content were increased, both the hardness and tensile strength were gradually increased, despite the fact that the electrical conductivity decreased slightly. The effects of an aging treatment on the conductivity and mechanical properties of Mg-RE-Zn alloys were also investigated. The electrical conductivity did not change according to the heat treatment conditions; however, the mechanical properties could be enhanced by proper aging heat treatments.

• Korean Journal of Materials Research
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• v.21 no.8
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• pp.456-460
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• 2011

Microelectromechanical systems (MEMS)-fabricated suspended devices were used to measure the in-plane electrical conductivity, Seebeck coefficient, and thermal conductivity of 304 nm and 516 nm thick InGaAlAs films with 0.3% ErAs nanoparticle inclusions by volume. The suspended device allows comprehensive thermoelectric property measurements from a single thin film or nanowire sample. Both thin film samples have identical material compositions and the sole difference is in the sample thickness. The measured Seebeck coefficient, electrical conductivity, and thermal conductivity were all larger in magnitude for the thicker sample. While the relative change in values was dependent on the temperature, the thermal conductivity demonstrated the largest decrease for the thinner sample in the measurement temperature range of 325 K to 425 K. This could be a result of the increased phonon scattering due to the surface defects and included ErAs nanoparticles. Similar to the results from other material systems, the combination of the measured data resulted in higher values of the thermoelectric figure of merit (ZT) for the thinner sample; this result supports the theory that the reduced dimensionality, such as in twodimensional thin films or one-dimensional nanowires, can enhance the thermoelectric figure of merit compared with bulk threedimensional materials. The results strengthen and provide a possible direction in locating and optimizing thermoelectric materials for energy applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.8
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• pp.711-717
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• 2000

Effect of alloying element additions to Ag on thermal conductivity electrical conductivity and mechanical properties of sheath materials for BSCCO tapes has been characterized. The thermal conductivity at low temperature range(10~300K) of Ag alloys were evaluated by both direct and indirect measurement techniques and compared with each other. It was observed that thermal conductivity decreased with increasing the content of alloying elements such as Au, Pd and Mg. Thermal conductivity of pure Ag at 30 K was measured to be 994.0 W/m.K on the other hand the corresponding values of A $g_{0.9995}$/M $g_{0.0005}$, A $g_{0.974}$/A $u_{0.025}$/M $g_{0.001}$, A $g_{0.973}$/Au.0.025//M $g_{0.002}$, and A $g_{0.92}$/P $d_{0.06}$/M $g_{0.02}$ were 342.6, 62.1, 59.2, 28.9 W/m.K respectively indicating 3 to 30 times lower than that of pure Ag. In addition alloying element additions to Ag improved mechanical strength while reduced elongation probably due to the strengthening mechanisms by the presence of additive atoms.s.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.4
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• pp.89-94
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• 2022

Thermoelectric materials can directly convert a temperature gradient to an electrical energy and vice-versa, and their performance is determined by the electrical conductivity, Seebeck coefficient, and thermal conductivity. However, it is difficult to establish an effective strategy for enhancing performance since electrical conductivity, Seebeck coefficient, and thermal conductivity are strongly dependent on the composition, crystal structure, and electronic structure of the material, and show a correlation with each other. Herein, based on the understanding of the formulas related to the performance of thermoelectric materials, we provide a methodology to establish feasible defect engineering strategies of thermal conductivity reduction for improving the performance of thermoelectric materials in connection with the experimental results.

• Journal of the Korean Society of Industry Convergence
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• v.20 no.4
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• pp.257-263
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• 2017

The following thesis researched into the characteristics of electrolytic ion water with different levels of electrical conductivity by adding NaCl into tap water which is for experimental use in multi-layered electrolytic ion water generator. Electrolytic ion water is generated by underwater electrolysis and the electrolysis generator has a simple structure, is easy to control and is highly utilized in industries. Electrolytic ion water is useful in many areas since it has a superior sterilizing power, has no possibility of secondary pollution itself as water and removes active oxygen. In the experiment, we used tap water with NaCl excluded and water with three different levels of electrical conductivity by changing NaCl concentration levels into three levels. The features of current and voltage in electrolytic ion water represented a form of quadric instead of the linear characteristic following ohm's law. As well, as the electric conductivity of water and applied voltage increased, we were able to generate much stronger acid water and alkali water.

• Advances in materials Research
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• v.6 no.1
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• pp.79-91
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• 2017

In the present work, a design of experiment (DOE) technique using Taguchi method, has been applied to optimize the properties of ODS tungsten heavy alloys(WHAs). In this work Taguchi method involves nine experiments groups for four processing parameters (compaction pressure, sintering temperature, binding material type, and oxide type) with three levels was implemented. The signal-to-noise (S/N) ratio and analysis of variance (ANOVA) were employed to obtain the optimal process parameter levels and to analyze the effect of these parameters on density, electrical conductivity, hardness and compressive strength values. The results showed that all the chosen factors have significant effects on all properties of ODS tungsten heavy alloys samples. The density, electrical conductivity and hardness increases with the increase in sintering temperature. The analysis of the verification experiments for the physical properties (density and Electrical conductivity) has shown that Taguchi parameter design can successfully verify the optimal parameters, where the difference between the predicted and the verified values of relative density and electrical conductivity is about 1.01% and 1.15% respectively.