• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1018-1021
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• 2001

1018-1021 The CuO-P$_2$O$_{5}$ containing P$_2$O$_{5}$ as glass-former were prepared by press-quenching method on the copper plate. By post-heat treatment of these glasses, the CuO-P$_2$O$_{5}$ -V$_2$O$_{5}$ -g1ass ceramics was obtained and the crystallization behavior and dc conductivities were investigovted. The heat-treated glass-ceramics decreased in electrical conductivity by the order of 10$^1$ compared to amorphous glass. The linear relationship between In($\sigma$T) and T$^{-1}$ indicated that electrical conduction in CuO-P$_2$O$_{5}$ -V$_2$O$_{5}$ -gass occurred by a small polaron hopping.

• Proceedings of the KIEE Conference
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• 1989.11a
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• pp.127-130
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• 1989

This paper reports the theoretical model and the experimental results regarding to the electrical conductivity of hydrogenated amorphous silicon (a-Si:H). The total effective conductance of a-Si:H with a planar structure has been considered as the sum of the conductance of an adsorbate-induced layer, a surface-interface layer, a bulk layer, and a substrate-interface layer. In order to investigate the effects of space charge layers in a-Si:H on the conductivity, the thickness dependence of the conductivity is characterized and the conductivities measured at the upper electrodes deposited on a-Si:H are compared with those measured at the lower electrodes deposited on the glass substrate. From our analysis, the bulk conductivity and the thickness of the space charge layer in a-Si:H are characterized quantitatively.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1239-1242
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• 1994

We have characterized XeCl excimer-laser-induced crystallization of thin amorphous silicon films deposited by PECVD (${\alpha}-Si:H$) and LPCVD(${\alpha}-Si$). The electrical and optical properties and surface roughness of crystallized thin films have been measured. The dc conductivities, crystallinity and surface roughness of the films increased as the laser energy density and shot density were increased. Also, we have investigated the effects of 2-step annealing employing SPC and ELA. The properties of 2-step annealed films were better than those of films annealed by ELA only.

• Journal of the Korean Society for Precision Engineering
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• v.16 no.8
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• pp.100-105
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• 1999

This work analyses the effects of electrical conductivities of dielectric and cobalt amount on output parameters such as metal removal rate and the surface roughness value of cemented carbides cut by wire electrical discharge machining(W-EDM). Especially, the cracking behaviour of W-EDM machined surface and optimal machining condition of three kinds of cemented carbides, which have different chemical composition of tungsten carbide and cobalt are also tested. Experimental result shows that increases in cobalt content and electrical conductivity of the dielectric affect the metal removal rate and substantially worsen the final surface quality as a greater quantity of solidified metal deposits on the eroded surface.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.57-57
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• 2018

Zinc-oxide (ZnO), II-VI semiconductor with a wide and direct band gap (Eg: 3.2~3.4 eV), is one of the most potential candidates to substitute for ITO due to its excellent chemical, thermal stability, specific electrical and optoelectronic property. However, the electrical resistivity of un-doped ZnO is not low enough for the practical applications. Therefore, a number of doped ZnO films have been extensively studied for improving the electrical conductivities. In this study, Ti-doped ZnO films were successfully prepared by atomic layer deposition (ALD) techniques. ALD technique was adopted to careful control of Ti doping concentration in ZnO films and to show its feasible application for 3D nanostructured TCO layers. Here, the structural, optical and electrical properties of the Ti-doped ZnO depending on the Ti doping concentration were systematically presented. Also, we presented 3D nanostructured Ti-doped ZnO layer by combining ALD and nanotemplate processes.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1244-1246
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• 1997

In conducting systems based on Langmuir - Blodgett (LB) films, tetracyanoquinodimethane(TCNQ) derivatives have been extensively studied as electron acceptor molecules. We have fabricated N-docosyl N'-methyl viologen diTCNQ (DMVT) anion radical LB film and investigated the FT-IR, ESR, and AFM images as the optical, magnetic properties and morphology of the LB film. We have measured in-plane electrical conductivity with number of layers. The in-plane conductivities are approximately $10^{-7}{\sim}10^{-6}\;S/cm$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.1
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• pp.1-6
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• 1998

Polyaniline free standing films are prepared by various processing. The properties of these films such as electrical conductivity and electromagnetic shielding efficiency are investigated. The conductivities of films doped with a camphorsulfonic acid and a silver are found to be 170/cm and 190S/cm, respectively, indicating metallic behavior. The films added silver, which are casted from hydrochloric acid and dodecylbenzensulfonic acid, show that the electromagnetic shielding efficiency are obtained 42∼52dB and 46∼56dB in the frequency range of 10MHz∼1GHz, respectively. This suggests that the films added silver, which is casted from dodecylbenzensulfonic acid, can be used as electromagnetic shielding material.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.4
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• pp.162-166
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• 2017

Thermoelectric compounds of $Zn_{1-x}Ag_xSb$ with x = 0~0.2 were prepared by vacuum melting and quenching process and their crystal phases and thermoelectric properties were examined. It was found that free metallic Sb phases were formed in the compound with x = 0.05, leading to increasing the electrical conductivities. The power factors were significantly affected by the electrical conductivity rather than Seebeck coefficient. When x > 0.05, the peak intensities of $Ag_3Sb$ phases in XRD patterns were increased and those of free Sb phases were weakened. These changes of second phases resulted in decreasing the electrical conductivities and the power factors and became more obvious in the compound with x = 0.2.

• Composites Research
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• v.33 no.3
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• pp.153-160
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• 2020

In this paper, hexagonal boron nitride (h-BN) particles were added between the sheets of prepreg, and the effect of on many properties of BN-embedded carbon fiber reinforced plastics was investigated. The amount of BN particles which corresponds with 0 to 15 wt% of total resin weight was used as an additive material. The tensile strength and the inter-laminar shear strength of BN-embedded CFRP samples were improved by maximally 13.6%, and 6.7%, respectively. The tendency changes of thermal, electrical conductivities and the morphology of cross-section of CFRPs were also observed. This study suggests the possibility of controlling the characteristics of carbon fiber-BN-epoxy composites to use for aerospace applications.

• Journal of the Korean Mathematical Society
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• v.47 no.6
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• pp.1223-1238
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• 2010

The purpose of this work is to identify the internal structure of the electrical networks with data obtained from only a part of network or the boundary of network. To be precise, it is discussed whether we can identify resistors or electrical conductivities of each link inside networks by the measurement of voltage on the boundary which is induced by a prescribed current on the boundary. As a result, it is shown that the structure of the resistor network can be determined uniquely by only one pair of the data (current, voltage) on the boundary, if the resistors satisfy an appropriate condition. Besides, several useful results about the energy functionals, which means the electrical power, are included.