• Journal of Korean Society of Disaster and Security
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• v.10 no.1
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• pp.85-90
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• 2017

The purpose of this study is to investigate the effect of vertical and horizontal refraction on the lower part of the power supply and control system of various facilities and machinery that use electricity, so that the power distribution system, which is an important electric facility installed in buildings and public facilities, Type earthquake resistant pads to protect the substructure and prevent short-circuiting on the upper part of the system. The GR-63-CORE (Scale 8.3 class) It is earthquake disaster prevention and disaster prevention technology that satisfies seismic performance. As a research result, it is possible to protect the electricity and communication infrastructure, which can contribute to shortening the time for recovering the electric facilities to the normal state in case of an earthquake, and preventing the fire caused by the destruction of the electricity supply facility in case of an earthquake. As a result, it is possible to minimize the spread of fire that occurs when a large-scale earthquake occurs and to minimize the damage of people and damage to property, and it can contribute to the securing of electric infrastructure that enables citizens to quickly recover to daily life even after suffering a major earthquake. In addition, the technology can be applied to ensure the seismic resistance of the equipment in the communication and computer room, and it can be applied to various fields where the facility function can be stopped due to the shaking of the earthquake base.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.39 no.6
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• pp.34-42
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• 2002

In this paper, we propose a temperature independent the detective voltage source in voltage detector. The value of a detective voltage source is designed to become m times of silicon bandgap voltage at zero absolute temperature. By properly choosing the temperature coefficient of diode, the temperature coefficient of a concave voltage nonlinearities generated by the ${\Delta}V_{BE}$ section of diode between base and emitter of transistors with a different area can be summed with convex nonlinearities the $V_{BE}$ voltage to achieve the near zero temperature coefficient of the detective voltage source. We designed that the value of a detective voltage can be varied by ${\Delta}V_{BE}$, the $V_{BE}$multiplier circuit and resistor. In order to verify the performance of a proposed detective voltage source, we manufactured the voltage detector IC for 1.9V which is fabricated in $6{\mu}m$ Bipolar technology and measured the operating characteristics, the temperature coefficient of a detective voltage. To reduce the deviation of a detective voltage in the IC process step, we introduced a trimming technology, ion implantation and an isotropic etching. In manufactured IC, the detective voltage source could achieve the stable temperature coefficient of 29ppm/$^{\circ}C$ over the temperature range of -30$^{\circ}C$ to 70$^{\circ}C$. The current consumption of a voltage detector constituted by the proposed detective voltage source is $10{\mu}A$ from 1.9V-supply voltage at room temperature.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.9
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• pp.936-943
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• 2013

This work presents the design and measured results of the single channel automotive radar system for 76.5~77 GHz long range FMCW radar applications. The transmitter uses a commercial GaAs monolithic microwave integrated circuit(MMIC) and the receiver uses the down converter designed using 65 nm CMOS process. The output power of the transmitter is 10 dBm. The down converter chip can operate at low LO power as -8 dBm which is easily supplied from the transmitter output using a coupled line coupler. All MMICs are mounted on an aluminum jig which embeds the WR-10 waveguide. A microstrip to waveguide transition is designed to feed the embedded waveguide and finally high gain horn antennas. The overall size of the fabricated radar system is $80mm{\times}61mm{\times}21mm$. The radar system achieved an output power of 10 dBm, phase noise of -94 dBc/Hz at 1 MHz offset and a conversion gain of 12 dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.6
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• pp.470-477
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• 2017

As a method of the transmission efficiency improvement of an aperture smaller than the wavelength, we modified the conventional H-shaped resonant aperture to lower the resonance frequency of resonant aperture, and the transmission efficiency of resonant aperture was improved more than the conventional aperture. The maximum transmission cross section(TCS) calculated using the equivalent circuit tends to be almost equal to the maximum TCS from the small resonant aperture modified to improve the transmission efficiency. The transmission characteristics of resonant apertures can be quantified as the TCS, and the transmission efficiency of that can be compared. The modified resonant aperture has a maximum TCS increased by about 2.87 times from $846mm^2$ to $2,431mm^2$ compared to the H-shaped aperture, and the resonant frequency decreased from 5.06 GHz to 2.92 GHz, and the length-to-wavelength ratio of the aperture was reduced from 0.178 to 0.103.

• Journal of IKEEE
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• v.7 no.2 s.13
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• pp.236-244
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• 2003

In this paper, RF and IF circuits for mobile terminals which have usually been implemented using expensive BiCMOS processes are designed using CMOS circuits, and a Tx CMOS RF/IF single chip for PCS applications is designed. The designed circuit consists of an IF block including an IF PLL frequency synthesizer, an IF mixer, and a VGA and an RF block including a SSB RF mixer and a driver amplifier, and performs all transmit signal processing functions required between digital baseband and the power amplifier. The phase noise level of the designed IF PLL frequency synthesizer is -114dBc/Hz@100kHz and the lock time is less than $300{\mu}s$. It consumes 5.3mA from a 3V power supply. The conversion gain and OIP3 of the IF mixer block are 3.6dB and -11.3dBm. It consumes 5.3mA. The 3dB frequencies of the VGA are greater than 250MHz for all gain settings. The designed VGA consumes 10mA. The designed RF block exhibits a gain of 14.93dB and an OIP3 of 6.97dBm. The image and carrier suppressions are 35dBc and 31dBc, respectively. It consumes 63.4mA. The designed circuits are under fabrication using a $0.35{\mu}m$ CMOS process. The designed entire chip consumes 84mA from a 3V supply, and its area is $1.6㎜{\times}3.5㎜$.

• Journal of IKEEE
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• v.19 no.2
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• pp.193-200
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• 2015

In this paper, we propose the radiation measuring algorithm and the device composition using CMOS image sensor. The radiation measuring algorithm using CMOS image sensor is based on the radiation particle distinguishing algorithm projected to the CMOS image sensor and accumulated and average number of pixels of the radiation particles projected to dozens of images per second with CMOS image sensor. The radiation particle distinguishing algorithm projected to the CMOS image sensor measures the radiation particle images by dividing them into R, G and B and adjusting the threshold value that distinguishes light intensity and background from the particle of each image. The radiation measuring algorithm measures radiation with accumulated and average number of radiation particles projected to dozens of images per second with CMOS image sensor according to the preset cycle. The hardware devices to verify the suggested algorithm consists of CMOS image sensor and image signal processor part, control part, power circuit part and display part. The test result of radiation measurement using the suggested CMOS image sensor is as follows. First, using the low-cost CMOS image sensor to measure radiation particles generated similar characteristics to that from measurement with expensive GM Tube. Second, using the low-cost CMOS image sensor to measure radiation presented largely similar characteristics to the linear characteristics of expensive GM Tube.

• Journal of IKEEE
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• v.21 no.4
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• pp.368-374
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• 2017

In this Paper, we developed a low power type LED security light using LED lighting that substitutes a 220[V] commercial power source for a solar cell module instead of a halogen or a sodium lamp. in addition, a PWM type drive control circuit is designed to minimize the heat generation problem and the drive current of the LED drive controller. in developed system, The light efficiency measurement value is 93.6[lm/W], and a high precision temperature sensor is used inside the controller to control the heat generation of the LED lamp. In order to eliminate the high heat generated from the LED lamp, it is designed to disperse quickly into the atmosphere through the metal insertion type heat sink. The heat control range of LED lighting was $50-55[^{\circ}C]$. The luminous flux and the lighting speed of the LED security lamp were 0.5[s], and the beam diffusion angle of the LED lamp was about $110[^{\circ}C]$ by the light distribution curve based on the height of 6[m].

• Journal of the Korean Vacuum Society
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• v.17 no.6
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• pp.518-522
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• 2008

The miniaturization of device size and multilevel interlayers have been developed by ULSI circuit devices. These submicron processes cause serious problems in conventional metallization due to the solubility of silicon and metal at the interface, such as an increasing contact resistance in the contact hole and interdiffusion between metal and silicon. Therefore it is necessary to implement a barrier layer between Si and metal. Thus, the size of multilevel interconnection of ULSI devices is critical metallization schemes, and it is necessary reduce the RC time delay for device speed performance. So it is tendency to study the Cu metallization for interconnect of semiconductor processes. However, at the submicron process the interaction between Si and Cu is so strong and detrimental to the electrical performance of Si even at temperatures below $200^{\circ}C$. Thus, we suggest the tungsten-carbon-nitrogen (W-C-N) thin film for Cu diffusion barrier characterized by nano scale indentation system. Nano-indentation system was proposed as an in-situ and nanometer-order local stress analysis technique.

• Journal of Korea Society of Industrial Information Systems
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• v.19 no.5
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• pp.25-31
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• 2014

Bioelectrical Impedance Analysis(BIA) is a widely used method for estimating body composition changes which is a non-invasive, inexpensive, safety and reproductive method. We studied the bioimpedance change and the distinction of blood pressure according to body posture and conducted three kinds of experiments: the real-time bioimpedance measurement, the simulation using equivalent circuit model and the blood pressure measurement. Bioimpedance is measured during 4 minutes at the multi-frequency(1 kHz, 10 kHz, 20 kHz, 50 kHz, 70 kHz, 100 kHz). From the experiment results, the changes in body postures result in changes of resistance and reactance, with an average rapid increase of body impedance when going from standing, sitting to supine. Specially, the laying resistance on average was 16.49% higher than supine resistance at 50 kHz and the laying reactance measurement was also 26.05% higher than sitting reactance at 1 kHz. Blood pressure in standing posture was higher than those in other postures both in maximum($125.14{\pm}12.30$) and in minimum($75.57{\pm}10.31$). The results of BIA and blood pressure in this study will be contributed to the research on acute illness, extreme fat, and body shape abnormalities.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.16 no.12
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• pp.1336-1347
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• 1991

In this paper, The PC interface for packet terminal of ISDN is designed and implemented in order to build packet communication networks which share computer resources and exchange informations between computer in the ISDN environment. The PC interface for packet terminal of ISDN constitutes S interface handler part which controls functions of ISDN layer1 and layer 2, constitutes packet handler part which controls services of X.25 protocol in the packet level.Where, The function of ISDN layer1 provides rules of electrical and mechanical characteristics, services for ISDN layer 2. The function of ISDN layer 2 provides function of LAPD procedure, services for X.25 The X.25 specifies interface between DCE and DTE for terminals operrating in the packet mode. The S interface handler part is orfanized by Am 79C30 ICs manufactured by Advanecd Micro Devices. ISDN packet handler part is organiged by AmZ8038 for FIFO for the purpose of D channel. The common signal procedure for D channel is controlled by Intel's 8086 microprocessor. The S interface handler part is based on ISDN layer1,2 is controlled by mail box in order to communicate between layers. The ISDN packet handler part is based on module in the X.25 lebel. The communication between S interface handler part and ISDN packet handler part is organized by interface controller.