• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.11
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• pp.9-18
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• 2003

Two configurations of Film Bulk Acoustic Wave Resonators with acoustic quater-wave bragg reflector layers are theoretically analyzed using equivalent circuits and the difference of their characteristics are discussed. We compare the characteristics of λ/2 mode to those of ideal FBAR with top and bottom electrode contacting air and the characteristics of λ/4 mode to those of ideal FBAR with top electrode contacting air and bottom electrode clamped. We assume that the piezoelectric film is ZnO, the electrode is A1 and the substrate is Si, ABCD parameters are extracted and input impedance is calculated by converting the equivalent circuit from Mason equivalent circuits to the simplified equivalent circuits that ABCD parameters are extracted possible, From the variation of resonance frequency due to the change of thickness of reflector layers and the variation of electrical Q due to the change of mechanical Q of reflector layers, it is confirmed that the reflector layer just under the bottom electrode have the greatest effect on the varation of resonance frequency and electrical Q. It is shown that the number of reflector layers required for the saturation of electrical Q decreases with the increase of the impedance ratio of reflector layers and electrical Q of λ/2 mode is larger than that of λ/4 mode, Electromechanical coupling factor is independent of the number of layers, The impedance ratio of reflector layers becomes larger as the electromechanical coupling factor becomes larger, The electromechanical coupling factor of the two mode are smaller than those of ideal FBARs because of the trapping of acoustic energy in the reflector layers, The insertion loss of the ladder filter decreases with the increase of the number of reflector layers but the bandwidth is not affected much by the number of reflector layers, As the impedance ratio of reflector layers becomes larger the insertion loss becomes smaller and the bandwidth becomes wider, In our analysis of the two mode, characteristics of λ/2 mode appear to be slightly more favorable than that of λ/4 mode

• Korean Journal of Fisheries and Aquatic Sciences
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• v.28 no.3
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• pp.253-262
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• 1995

To develop a device for measuring fish freshness which could be move accurate and reliable than used freshness measuring systems. A new device based on digital circuit was designed using a microcomputer. The device was composed of a sensor part, 8096 microprocessor and a segment display. The effectiveness of device has been evaluated by the coefficient of correlation among the measured freshness stores such as electrical Q-value, K-value and amount of volatile basic nitrogen (VBN) of plaice, Paralichthys Olivaceus, during storage at $-3^{\circ}C,\;0^{\circ}C,\;5^{\circ}C,\;10^{\circ}C,\;and\;25^{\circ}C$. Q-values measured by a new device were more closely correlated with K-value (r=-0.978-\;-0.962,\;p<0.05) and VBN (r=-0.888-\;-0.988,\;p<0.05) in case of plaice meat. If more data would achieve using various fishes, this new designed device could be a valuable kit in fish market by its compact portability.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.22 no.2
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• pp.347-353
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• 2018

In this paper, we studied a design method for a band-pass waveguide filter with a modified H-type resonant iris (RI) placed in a thin transverse wall of a rectangular waveguide. The horizontal straight gap at the center of a conventional H-shaped iris is modified to a U-shaped one to increase the equivalent capacitance, and the equivalent inductance is improved by changing the vertical two straight slots into C-shaped ones. From some simulation results for the frequency response of the proposed RI, it was observed that the proposed iris was advantageous for reducing its size and having better cutoff, compared to typical H-shaped one. Equivalent inductance, capacitance, and quality factor of the proposed RI were extracted to analyze its performance. A third-order band pass filter using the proposed modified H-shaped iris was designed and, it was observed that the filter operated in the frequency range of 9.18-9.84 GHz with its insertion loss of 0.3 dB and return loss of 14 dB.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.422.1-422.1
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• 2016

Graphene quantum dots (GQDs), a new kind of carbon-based photo luminescent nanomaterial from chemically modified graphene oxide (CMGO) or chemically modified graphene (CMG), has attracted extensive research attention in the last few years due to its outstanding chemical, optical and electrical properties. To further extended its potential applications as optoelectronic devices, solar cells, bio and bio-sensors and so on, intensive research efforts have been devoted to the CMG. However, the CMG, a suspension of aqueous, have problematic since they are prone to agglomeration after drying a solvent. In this study, we synthesized the GQDs from graphite and deposited on silicon substrate by kinetic spray. The photo luminescent properties of deposited GQD films were analyzed and compared with initial GQDs suspension. In addition, its carbon properties were investigated with GQDs solution properties. The properties of deposited GQD films by kinetic spray were similar to that of the GQDs suspension in water. We could provide a pathway for silicon-based silicon based device applications. Finally, the well-adjusted GQD films with photo luminescence effects will show Energy-Down-Shift layer effects on silicon solar cells. The GQD layers deposited at nozzle scan speeds of 40, 30, 20, and 10 mm/s were evaluated after they were used to fabricate crystalline-silicon solar cells; the results indicate that GQDs play an important role in increasing the optical absorptivity of the cells. The short-circuit current density (Jsc) was enhanced by about 2.94 % (0.9 mA/cm2) at 30 mm/s. Compared to a reference device without a GQD energy-down-shift layer, the PCE of p-type silicon solar cells was improved by 2.7% (0.4 percentage points).

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.8 s.99
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• pp.815-824
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• 2005

In this paper, we proposed a new DGS(Defected Ground Structure) Doherty amplifier for IMT-2000 band. Originally, active load-pull analysis of a Doherty amplifier assumes ideal harmonic termination condition. However, there have been no papers considering this ideal harmonic termination condition. We obtained excellent improvements of efficiency, gain, maximum output power as well as superior size reduction of a Doherly amplifier by satisfying the overlooked assumption of ideal harmonic termination through the adaptation of DGS at the output transmission line of carrier and peaking amplifier that is essential for Doherty operation. The amount of both the 2nd and the 3rd harmonic rejection of the proposed DGS Doherty amplifier over the conventional one are 44.92 dB and over 23.77 dB, respectively. The acquired improvement in Pl dB, gain, drain efficiency, and ACPR to WCDMA 1FA signal were 0.42 dB, 0.33 dB, $6.4\%$ and 5.4 dBc, respectively. Moreover, electrical length of $90{\circ}$ is reduced at each of the DGS carrier amplifier path and DGS peaking amplifier path, therefore the whole amplifier circuit size is considerably reduced.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.10 s.113
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• pp.967-975
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• 2006

In this paper, design and implementation of a very compact and cost effective front-end module are presented for IEEE 802.16 FWA(fixed Wireless Access) in the 40 GHz band. A multi-layer LTCC(Low Temperature Co-fred Ceramic) technology with cavity process to achieve excellent electrical performances is used to fabricate the front-end module. The wirebond matching circuit design of switch input/output port and waveguide transition to connect antenna are optimally designed to keep transmission loss low. To reduce the size of the front-end module, the dielectric waveguide filter is developed instead of the metal waveguide filter. The LTCC is composed of 6 layers(with the thickness of a layer of 100 um) having a relative dielectric constant of 7.1. The front-end module is implemented in a volume of $30{\times}7{\times}0.8mm^3$ and shows an overall insertion loss < 5.3 dB, and image rejection value > 49 dB.

• Resources Recycling
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• v.20 no.3
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• pp.12-27
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• 2011

DOWA group has been working on metal recycling applying the smelting and refining process of KOSAKA Smelter. DOWA has developed it's metal recycling technologies through the treatment of black ore(complex sulfide ores) that contain many kinds of non-ferrous metals. In addition to these special technologies, DOWA has strengthened its hydrometallurgical process of precious metals and ability to deal with low-grade materials such as used electrical appliances or vehicles. On the other hand, JX Nippon Mining & Metals Corporation(JX-NMMC) carries out its metal recycling and industrial waste treatment businesses employing advanced separation, extraction and refining technologies developed through its extensive experience in the smelting of non-ferrous metals. JX-NMMC collects approximately 100,000t/y of copper and precious metal scraps from waste sources such as electronic parts, mobile phones, catalytic converters, print circuit boards and gold plated parts. These items are recycled through the smelting and refining operations of Saganoseki smelter and Hitachi Metal-recycling complex(HMC). In this like, metal recycling industries combined with environmental business service in Japan have been developed through excellent technologies for mineral processing and non-ferrous smelting. Also, both group, Dowa and JX-NMMC, were contributed to establish Japan's recycling-oriented society as the typical leading company of non-ferrous smelting. Now. it is an important issue to set up the collection system for e-waste.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.12
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• pp.2899-2904
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• 2015

This paper introduces about the effect on $I_{DS}-V_{GS}$ characteristic of transistor that interface trap charge is created by damage due to heat in a 3D sequential inverter. A interface trap charge distribution in oxide layer in a 3D sequential inverter is extracted using two-dimensional device simulator. The variation of threshold voltage of top transistor according to the gate voltage variation of bottom transistor is also described in terms of Inter Layer Dielectric (ILD) length of 3D sequential inverter, considering the extracted interface trap charge distribution. The extracted interface trap density distribution shows that the bottom $HfO_2$ layer and both the bottom and top $SiO_2$ layer were relatively more affected by heat than the top $HfO_2$ layer with latest process. The threshold voltage variations of the shorter length of ILD in 3D sequential inverter under 50nm is higher than those over 50nm. The $V_{th}$ variation considering the interface trap charge distribution changes less than that excluding it.

• Journal of the Korean Society of Marine Environment & Safety
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• v.25 no.6
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• pp.802-808
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• 2019

DC motors are used extensively on shipboard, including as the ship's winch operating motor, owing to their simple speed control and excellent output torque characteristics. Moreover, they were used as propulsion motors in the early days of electric propulsion ships. However, mechanical rectifiers, such as brushes, used in DC motors have certain disadvantages. Hence, brushless DC (BLDC) motors are increasingly being used instead. While the electrical characteristics of both types of motors are similar, BLDC motors employ electronic rectifying devices, which use semiconductor elements, instead of mechanical rectifying devices. The inverter system for driving conventional BLDC motors uses a two-phase excitation method so that the waveform of the back electromotive force becomes trapezoidal. This causes harmonics and torque ripple in the phase current switching period in which the winding wire through which the current flows is changed. Researchers have studied and presented various methods to reduce the harmonics and torque ripple. This study applies a cascaded H-bridge multilevel inverter, which implements a proportional-integral speed current controller algorithm in the driving circuit of the BLDC motor for electric propulsion ships using a power analysis program. The simulation results of the modeled BLDC motor show that the driving method of the proposed BLDC motor improves the voltage waveform of the input side of the motor and remarkably reduces the harmonics and torque ripple compared with the conventional driving method.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.993-994
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• 2008

Electrochromic (EC) devices are capable of reversibly changing their optical properties upon charge injection and extraction induced by the external voltage. The characteristics of the EC device, such as low power consumption, high coloration efficiency, and memory effects under open circuit status, make them suitable for use in a variety of applications including smart windows and electronic papers. Coloration due to reduction or oxidation of redox chromophores can be used for EC devices (e-paper), but the switching time is slow (second level). Recently, with increasing demand for the low cost, lightweight flat panel display with paper-like readability (electronic paper), an EC display technology based on dye-modified $TiO_2$ nanoparticle electrode was developed. A well known organic dye molecule, viologen, was adsorbed on the surface of a mesoporous $TiO_2$ nanoparticle film to form the EC electrode. On the other hand, ZnO is a wide bandgap II-VI semiconductor which has been applied in many fields such as UV lasers, field effect transistors and transparent conductors. The bandgap of the bulk ZnO is about 3.37 eV, which is close to that of the $TiO_2$ (3.4 eV). As a traditional transparent conductor, ZnO has excellent electron transport properties, even in ZnO nanoparticle films. In the past few years, one-dimension (1D) nanostructures of ZnO have attracted extensive research interest. In particular, 1D ZnO nanowires renders much better electron transportation capability by providing a direct conduction path for electron transport and greatly reducing the number of grain boundaries. These unique advantages make ZnO nanowires a promising matrix electrode for EC dye molecule loading. ZnO nanowires grow vertically from the substrate and form a dense array (Fig. 1). The ZnO nanowires show regular hexagonal cross section and the average diameter of the ZnO nanowires is about 100 nm. The cross-section image of the ZnO nanowires array (Fig. 1) indicates that the length of the ZnO nanowires is about $6\;{\mu}m$. From one on/off cycle of the ZnO EC cell (Fig. 2). We can see that, the switching time of a ZnO nanowire electrode EC cell with an active area of $1\;{\times}\;1\;cm^2$ is 170 ms and 142 ms for coloration and bleaching, respectively. The coloration and bleaching time is faster compared to the $TiO_2$ mesoporous EC devices with both coloration and bleaching time of about 250 ms for a device with an active area of $2.5\;cm^2$. With further optimization, it is possible that the response time can reach ten(s) of millisecond, i.e. capable of displaying video. Fig. 3 shows a prototype with two different transmittance states. It can be seen that good contrast was obtained. The retention was at least a few hours for these prototypes. Being an oxide, ZnO is oxidation resistant, i.e. it is more durable for field emission cathode. ZnO nanotetropods were also applied to realize the first prototype triode field emission device, making use of scattered surface-conduction electrons for field emission (Fig. 4). The device has a high efficiency (field emitted electron to total electron ratio) of about 60%. With this high efficiency, we were able to fabricate some prototype displays (Fig. 5 showing some alphanumerical symbols). ZnO tetrapods have four legs, which guarantees that there is one leg always pointing upward, even using screen printing method to fabricate the cathode.