• 제목/요약/키워드: Electrical capacitance

검색결과 1,562건 처리시간 0.027초

흡연이 십이원혈(十二原穴)의 체표 capacitance에 미치는 영향 (The Effects of Smoking on Bioelectrical Capacitance Measured at Twelve Source Points: A Cross-Over Study)

  • 김양섭;박영춘;임윤경
    • 대한한의학회지
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    • 제36권3호
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    • pp.35-52
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    • 2015
  • Objectives: The objective of this study was to investigate the effects of smoking on the skin bio-electrical capacitance at twelve source points. Methods: Twenty healthy male subjects were assigned to smoking and sham-smoking by a random cross-over design. Skin bio-electrical capacitance was measured at twelve source points for 10 minutes before and after smoking. The change of skin bio-electrical capacitance was analysed. Results: 1. The skin bio-electrical capacitance at LU9, PC7 and LR3 was significantly increased after smoking. 2. In the smoking group, the skin bio-electrical capacitance at the source points of Hand Yin meridians significantly increased compared to that of Foot Yin and Hand Yang meridians. Conclusions: Smoking significantly increased the skin bio-electrical capacitance at the source points of Lung, Pericardium and Liver meridians. Hand Yin meridians appear to be more vulnerable to smoking than other meridians.

The thermal effect on electrical capacitance sensor for two-phase flow monitoring

  • Altabey, Wael A.
    • Structural Monitoring and Maintenance
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    • 제3권4호
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    • pp.335-347
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    • 2016
  • One of major errors in flow rate measurement for two-phase flow using an Electrical Capacitance Sensor (ECS) concerns sensor sensitivity under temperature raise. The thermal effect on electrical capacitance sensor (ECS) system for air-water two-phase flow monitoring include sensor sensitivity, capacitance measurements, capacitance change and node potential distribution is reported in this paper. The rules of 12-electrode sensor parameters such as capacitance, capacitance change, and change rate of capacitance and sensitivity map the basis of Air-water two-phase flow permittivity distribution and temperature raise are discussed by ANSYS and MATLAB, which are combined to simulate sensor characteristic. The cross-sectional void fraction as a function of temperature is determined from the scripting capabilities in ANSYS simulation. The results show that the temperature raise had a detrimental effect on the electrodes sensitivity and sensitive domain of electrodes. The FE results are in excellent agreement with an experimental result available in the literature, thus validating the accuracy and reliability of the proposed flow rate measurement system.

Capacitance Swing and Capacitance Ratio of GaN-Based Metal-Semiconductor-Metal Two-Dimensional Electron Gas Varactor with Different Dielectric Films

  • Tien, Chu-Yeh;Kuei, Ping-Yu;Chang, Liann-Be;Hsu, Chien-Pin
    • Journal of Electrical Engineering and Technology
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    • 제10권4호
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    • pp.1720-1725
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    • 2015
  • The performance of the AlGaN/GaN MSM-2DEG varactor with different dielectric films deposited by the E-beam deposition is investigated in detail. The capacitance swing and the capacitance ratio of the varactor without dielectric film as well as with, SiO2, Gd2O3, and Si3N4 films, respectively, are determined by electrodes of varying areas. The maximum capacitance, the minimum capacitance and the capacitance ratios are proportional to the increasing of the electrode areas. The capacitance ratio determined by the maximum and the minimum capacitance is found to be 18.35 (with Si3N4 dielectric film) and 149.51 (without dielectric film), respectively. The transition voltages of the fabricated varactors are almost the same for a bias voltage of about ±5 V and leakage current can be lower three orders of magnitude while the varactors with dielectric films. The tunability of the capacitance ratio makes the AlGaN/GaN MSM-2DEG varactor with a dielectric film highly useful in multirange applications of a surge free preamplier.

가변 분할을 적용한 유한 요소법에 의한 3차원 모형의 효율적인 커패시턴스 추출 방법 (An Efficient Three-Dimensional Capacitance Extraction Based on finite Element Method Adopting Variable Division)

  • 김정학;김준희;김석윤
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제52권3호
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    • pp.116-122
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    • 2003
  • This paper proposes an efficient method for computing the 3-dimensional capacitance of complex structures. The proposed method Is based on Finite Element Method(FEM) and expands the conventional FEM by adopting variable division. This method improves the extraction efficiency 50 times when compared to the conventional FEM with equal division. The proposed method can be used efficiently to extract electrical parameters of on/off-chip interconnects in VLSI systems.

An Improved Technique for Fault Location Estimation Considering Shunt Capacitance on Transmission Line

  • Kim Hyun-Houng;Jeong Yun-Won;Lee Chan-Joo;Park Jong-Bae;Shin Joong-Rin
    • Journal of Electrical Engineering and Technology
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    • 제1권3호
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    • pp.295-301
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    • 2006
  • This paper presents a new two-terminal numerical algorithm for fault location estimation using the synchronized phasor in time-domain. The proposed algorithm is also based on the synchronized voltage and current phasor measured from the PMUs (Phasor Measurement Units) installed at both ends of the transmission lines. In this paper, the algorithm is given without shunt capacitance and with shunt capacitance using II -model and estimated using DFT (Discrete Fourier Transform) and LES (Least Error Squares Method). The algorithm uses a very short data window and classification for real-time transmission line protection. To verify the validity of the proposed algorithm, the Electro-Magnetic Transient Program (EMTP) and MATLAB are used.

메사구조를 갖는 다공질 실리콘 습도 센서 (Humidity sensors using porous silicon layer with mesa structure)

  • 전병현;양규열;김성진
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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    • pp.25-28
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    • 2000
  • A capacitance-type humidity sensors in which porous silicon layer is used as humidity-sensing material was developed. This sensors was fabricated monolithically to be compatible with the typical IC process technology except for the formation of porous silicon layer. As the sensors is made as a mesa structure, the correct measurement of capacitance is expected because it can remove the effect of the parasitic capacitance from the bottom layer and another junctions. To do this, the sensor was fabricated using process steps such as localized formation of porous silicon, oxidation of porous silicon layer and etching of oxidized porous silicon layer. From completed sensors, capacitance response was measured on the relative humidity of 25 to 95% at room temperature. As the result the measured capacitance showed the increase over 300% at the low frequency of 120Hz, and showed little dependence on the temperature between 10 to $40^{\circ}C$.

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Capacitance Estimation Method of DC-Link Capacitors for BLDC Motor Drive Systems

  • Moon, Jong-Joo;Kim, Yong-Hyu;Park, June-Ho;Kim, Jang-Mok
    • Journal of Electrical Engineering and Technology
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    • 제11권3호
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    • pp.653-661
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    • 2016
  • This paper proposes a capacitance estimation method of the dc-link capacitor for brushless DC motor (BLDCM) drive systems. In order to estimate the dc-link capacitance, the BLDCM is operated in quadrant-II or -IV among four-quadrant operation. Quadrant-II and -IV are called reverse braking and forward braking, respectively. During the braking operation of the BLDCM, the capacitor is charged by the phase current and then the voltage is increased during the braking operation time. The capacitor current and voltage can be obtained by using the phase current sensor of BLDCM and the dc-link voltage sensor. The capacitance and be easily obtained by the voltage equation of the capacitor. The proposed method guarantees the reliable and simple calculation of the dc-link capacitance without additional hardware system except several the sensors already installed for the motor control system. The effectiveness of the proposed method is verified through both the simulation and experimental results.

미세 방전 가공에서 방전 면적과 축전 용량에 따른 가공율 특성 (Characteristics of Material Removal Rate According to Discharge Area and Capacitance in MEDM)

  • 박동희;류시형;김보현;주종남
    • 한국정밀공학회지
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    • 제20권12호
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    • pp.183-190
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    • 2003
  • In this paper, investigated are the machining characteristics such as material removal rate and machining time with respect to discharge area and capacitance in micro electrical discharge machining (MEDM). As discharge area determined by the electrode size and capacitance change, the optimal feedrate to allow the minimum machining time changes. The smaller discharge area is, the lower MRR becomes because of the area effect. As the capacitance increases, MRR also increases. However there is the limit capacitance beyond which the MRR does not increase anymore. As the discharge area increases, the limit capacitance also increases.

세라믹소재를 이용한 해수압센서 제작 및 전기적 특성 연구 (A Study on the Fabrication and Electrical Characteristics of Hydraulic Pressure Sensors by Using Ceramics Materials)

  • 박성현;김은섭;정정균
    • 한국전기전자재료학회논문지
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    • 제28권6호
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    • pp.384-389
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    • 2015
  • In this paper, we fabricated ceramic body and sapphire wafer in order to develop a hydraulic pressure sensor with high sensitivity and high temperature stability. The sapphire wafer was adopted with a membrane of capacitance ceramic pressure sensor. The capacitance value of the sensor for the finite element analysis(FEM) showed a linear pressure characteristics. Membrane was processed with a diameter of 32.4 mm and a thickness of 1 mm by using alumina powders. Ceramic body was processed with a diameter 32.4 mm and a thickness 5 mm. The capacitance pressure sensor was made with high heat treatment of the ceramic body and the sapphire wafer. Initially capacitance of the pressure sensor was 50 pF and a capacitance of 110 pF was measured from 5 bar pressure. Output voltage of 5 V was appeared at 5 bar pressure.

인버티드 스태거형 TFT 캐패시턴스의 온도변화 특성 (Temperature Variation Capacitance Characteristics of Inverted Staggered TFT)

  • 정용호;이우선;김남오
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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    • pp.102-104
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    • 1996
  • The fabrication and analytical expression for the temperature dependent capacitance characteristics of inverted staggered hydrogenerated amorphous silicon thin film transistors(a-si :H TFT) from 303k to 363k were presented. The results show that the experimental capacitance-voltage characteristics at several temperatures are easily measured. Capacitance increased exponentially by gate voltage increase and decreased by temperature increase. C/C(max) ratio decreased at higher temperature, C/C(min) ratio increased at higher temperature.

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