• Journal of Electrical Engineering and Technology
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• v.8 no.4
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• pp.840-849
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• 2013

This paper presents a statistical approach to analyze electrical tree inception voltage, electrical tree breakdown voltage and tree breakdown time of unsaturated polyester resin subjected to AC voltage. The aim of this work was to show that Weibull and lognormal distribution may not be the most suitable distributions for analysis of electrical treeing data. In this paper, an investigation of statistical distributions of electrical tree inception voltage, electrical tree breakdown voltage and breakdown time data was performed on 108 leaf-like specimen samples. Revelations from the test results showed that Johnson SB distribution is the best fit for electrical tree inception voltage and tree breakdown time data while electrical tree breakdown voltage data is best suited with Wakeby distribution. The fitting step was performed by means of Anderson-Darling (AD) Goodness-of-fit test (GOF). Based on the fitting results of tree inception voltage, tree breakdown time and tree breakdown voltage data, Johnson SB and Wakeby exhibit the lowest error value respectively compared to Weibull and lognormal.

• Journal of Electrical Engineering and Technology
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• v.12 no.2
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• pp.865-873
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• 2017

Converter transformer is the key equipment of high voltage direct current transmission system. The solid suspending particles originating from the process of installation and operation of converter transformer have significant influence on the insulation performance of transformer oil, especially in presence of DC component in applied voltage. Under high electric field, the particles easily lead to partial discharge and breakdown of insulating oil. This paper investigated copper particle effect on the breakdown voltage of transformer oil at combined AC and DC voltage. A simulation model with single copper particle was established to interpret the particle effect on the breakdown strength of insulating oil. The experimental and simulation results showed that the particles distort the electric field. The breakdown voltage of insulating oil contaminated with copper particle decreases with the increase of particle number, and the breakdown voltage and the logarithm of particle number approximately satisfy the linear relationship. With the increase of the DC component in applied voltage, the breakdown voltage of contaminated insulating oil decreases. The simulation results show that the particle collides with the electrode more frequently with more DC component contained in the applied voltage, which will trigger more discharge and decrease the breakdown voltage of insulating oil.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.4
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• pp.408-412
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• 2023

In this paper, in order to analyze high electrical insulation and cooling performance using mineral oil, the liquid insulating oil was changed in electrode shape and distance between electrodes to compare and analyze electrical characteristics according to equal electric field, quasi-equivalent electric field, and unequal electric field. As a result, the breakdown voltages were 36,875 V and 36,875 V in the form of sphere-sphere and plate-plate electrodes with equal electric fields. The breakdown voltage was 31,475 V in the sphere-plate electrode type, which is a quasi-equilibrium field, and the breakdown voltage was 28,592 V, 27,050 V, and 22,750 V in the needle-needle, sphere-needle, and needle-plate electrode types, which are unequal fields. Through this, it is possible to know the difference in breakdown voltage according to the type of electric field. The more equal the field, the higher the breakdown voltage, and the more unequal field, the lower the breakdown voltage. The difference in insulation breakdown voltage could be seen depending on the type of electric field, the insulation breakdown voltage was higher for the more equal electric field, and the insulation breakdown voltage was lower for the more unequal electric field. Also, it was confirmed that the closer the distance between the electrodes, the higher the insulation breakdown voltage, the higher the insulation breakdown current, and the insulation breakdown voltage and the insulation breakdown current were proportional.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.1
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• pp.23-28
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• 1999

Electrical breakdown characteristics of liquid nitrogen($LN_2$) used as both coolant and insulator for high $T_c$ superconductor system are very important. This paper presents dynamic breakdown characteristics fo $LN_2$ by quench phenomena of thermal bubble under high electric field. Experimental results revealed dynamic breakdown voltage fell down drastically compared with the static breakdown voltage without the quench. Because of increasing heat power, bubble size becomes big and breakdown voltage decreases. The breakdown voltage mechanism of $LN_2$ depends on thermal bubble effect. In the Electrode arrangement, electrical breakdown voltage of horizontal arrangement appears lower than that of vertical arrangement. Also, we observed the behavior of thermal bubbles in $LN_2$ which were generated after quench using camera.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.8
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• pp.1398-1406
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• 2008

This paper describes the electrical breakdown characteristics of broken toughened glass stem insulators by comparing with those of sound ones. The broken toughened glass stem insulators were taken from the electric railway field. According to the international standards, the sound and broken toughened glass stem insulators were tested in electrical strength. In the test, the power frequency voltage and the impulse voltage with a standard waveform were applied to the insulators. The power frequency voltage tests were carried out under both dry and wet condition and the impulse voltage tests under only dry condition. The acquired results were compared one another and discussed in electrical breakdown characteristic by analyzing the flashover progress pictures. As a result, the electrical strength of the broken toughened glass insulators was acquired and the processes of the surface breakdown on the toughened glass insulators were confirmed.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.4
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• pp.659-665
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• 2017

Power semiconductor devices required the low on-resistance and high breakdown voltage. Wide band-gap materials opened a new technology of the power devices which promised a thin drift layer at an identical breakdown voltage. The diamond had the wide band-gap of 5.5 eV which induced the low power loss, high breakdown capability, low intrinsic carrier generation, and high operation temperature. We investigated the p-type pseudo-vertical diamond Schottky barrier diodes using a numerical simulation. The impact ionization rate was material to calculating the breakdown voltage. We revised the impact ionization rate of the diamond for adjusting the parallel-plane breakdown field at 10 MV/cm. Effects of the field plate on the breakdown voltage was also analyzed. A conventional diamond Schottky barrier diode without field plate exhibited the high forward current of 0.52 A/mm and low on-resistance of $1.71{\Omega}-mm$ at the forward voltage of 2 V. The simulated breakdown field of the conventional device was 13.3 MV/cm. The breakdown voltage of the conventional device and proposed devices with the $SiO_2$ passivation layer, anode field plate (AFP), and cathode field plate (CFP) was 680, 810, 810, and 1020 V, respectively. The AFP cannot alleviate the concentration of the electric field at the cathode edge. The CFP increased the breakdown voltage with evidences of the electric field and potential. However, we should consider the dielectric breakdown because the ideal breakdown field of the diamond is higher than that of the $SiO_2$, which is widely used as the passivation layer. The real breakdown voltage of the device with CFP decreased from 1020 to 565 V due to the dielectric breakdown.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.74-75
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• 2008

TIGBT has some merits which are lower on-state voltage drop and smaller cell pitch, but also has a defect which is relatively lower breakdown voltage in comparison with planar IGBT. This lower breakdown voltage is due to the electric field which is concentrated on beneath the vertical gate. Therefore in this paper, new trench IGBT structure is proposed to improve breakdown voltage In the new proposed structure, a narrow oxide beneath the trench gate edge where the electric field is concentrated is extended into rectangular shape to decrease the electric field. As a result, breakdown voltage is improved to 23%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.11
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• pp.681-684
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• 2016

This research was carried out experiments of variety IGBTs for industrial inverter and electric vehicle. The devices for this paper were planar gate IGBT, trench gate IGBT and dual gate IGBT and we designed using same design and process parameters. As a result of experiments, the electrical characteristics of planar gate IGBT were 1,459 V of breakdown voltage, 4.04 V of threshold voltage and 4.7 V of on-state voltage drop. And the electrical characteristics of trench gate IGBT were 1,473 V of breakdown voltage, 4.11 V of threshold voltage and 3.17 V of on-state voltage drop. Lastly, the electrical characteristics of dual gate IGBT were 1,467 V of breakdown voltage, 4.14 V of threshold voltage and 3.08V of on-state voltage drop. We almost knew that the trench gate IGBT was superior to dual gate IGBT in terms of breakdown voltage. On the other hand, the dual gate IGBT was better than the trench gate IGBT in terms of on state voltage drop.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.985-990
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• 2002

The electrical breakdown characteristics of liquid nitrogen(LN$\sub$2/) were studied under simulated quenching conditions for application of HTS apparatus. The experimental results for various quenching condition revealed that the breakdown voltage of LN$\sub$2/ with bubble flow velocity and gap spacing. In the case, breakdown voltage decreases gradually with the bubble velocity. When it is bubble velocity from 0 to 1 $\ell$ /min, breakdown voltage rapidly decreases but decreases from 2 $\ell$/min to 10 $\ell$/min slowly. The breakdown voltage for vertical electrode arrangement is higher than that for horizontal electrode arrangement. Also, it did a electric field and potential distribution interpreting at the liquid nitrogen when the bubble existed. The plots of equipotential lines for three cases are also shown.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.22-23
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• 2008

The conventional IGBT has two problems to make the device taking high performance. The one is high on state voltage drop associated with JFET region, the other is low breakdown voltage associated with concentrating the electric field on the junction of between p base and n drift. This paper is about the structure to effectively improve both the lower on state voltage drop and the higher breakdown voltage than the conventional IGBT. For the fabrication of the circular trench IGBT with the circular trench layer, it is necessary to perform the only one wet oxidation step for the circular trench layer. Analysis on both the on state voltage drop and the Breakdown voltage show the improved values compared to the conventional IGBT structure. Because the circular trench layer disperses electric field from p base and n drift junction to circular trench, the breakdown voltage increase. The on state voltage drop decrease due to reduction of JFET region and direction change of current path which pass through reversed layer channel.