• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.477-479
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• 1987

An understanding of dielectric breakdown characteristics in cryogenic liquids is of importance in the development of various cryogenic and superconducting electrical equipments. This investigation describes measurements of pulse breakdown voltage, polarity effect, conditioning effect and time lag characteristics of cryogenic liquids.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.230-233
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• 1996

In this paper, We intended to evaluate characteristics of XLPE/EPDM interface which exists in the cable joint. Because the fault was mainly occurred in this interface. We investigated breakdown characteristics of XLPE/EPDM double layered insulator as a funtion of temperature, pressure, annealing time, kinds of jointmaterial. It was shown that breakdown strength of XLPE/EPDM insulators is higher that of XLPE/XLPE or EPDM/EPDM

• Transactions on Electrical and Electronic Materials
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• v.10 no.3
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• pp.97-101
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• 2009

The use of a filler material in epoxy composite materials is an essential condition for reducing the unit cost of production and reinforcing mechanical strength. However, the dielectric strength of insulators decreases rapidly due to interactions between the epoxy resin and filler particles. In contrast to existing composite materials, nano-composite materials have superior dielectric strength, mechanical strength, and enduring chemical properties due to an increase in the bond strength of the polymer and nano material, It is reported that nano-fillers provide new characteristics different from the properties of the polymer material. This study is to improve the insulation capability of epoxy resins used in the insulation of a power transformer apparatus and many electronic devices mold. To accomplish this, the additional amount of nano-$SiO_2$ to epoxy resin was changed and the epoxy/$SiO_2$ nano composite materials were made, and the fundamental electrical properties were investigated using a physical properties and an analysis breakdown test. Using allowable breakdown probability, the optimum breakdown strength for designing an electrical apparatus was determined. The results found that the electrical characteristics of the nano-$SiO_2$ content specimens were superior to the virgin specimens. The 0.4 wt% specimens showed the highest electrical properties among the specimens examined with an allowable breakdown probability of 20 %, which indicates stable breakdown strength in insulating machinery design.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.11
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• pp.1647-1650
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• 2017

Bus bars are used in place of cables because they can carry more electrical energy with the same volume of conductors. This paper deals with the electrical properties of ceramic coating material for busbars. A ceramic coated samples were prepared for the electrical properties test. There are two types of samples. One is a sample without degradation, and the other is a sample degraded for 30 days. Four electrical properties tests were carried out in accordance with domestic standards. Four electrical characteristics tests are AC dielectric breakdown, V-t, lighting impulse dielectric breakdown, and discharge arc. Both samples showed excellent electrical properties, and the ceramic coating material is very good insulating materials for bus bar.

• 전기의세계
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• v.30 no.4
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• pp.231-236
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• 1981

It has been known that D.C. breakdown Voltage is lower than A.C. breakdown Voltage in insulatingoil, but there are still many unvivid points at electric conduction in breakdown or under of high electric field. This study measured the electric current-electric field characteristics (I-E characteristics) and the breakdown Voltage under of D.C. electric field of insulating oil using the system of electrodes that are near the Uniform electric field with a result. I can study, electric conduction in area of high electric field depends upon the Schottky effect. The liquidity of breakdown electric field takes place by the local concentration of electric field. The longer gap is and the more electric current is the more breakdown Voltage decreased. There are not almost the change of electric current-electric field characteristics by materials of electrode.

• Journal of Electrical Engineering and Technology
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• v.6 no.3
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• pp.391-396
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• 2011

The tracking pattern formed on the dielectric surface due to a surface electrical discharge exhibits fractal structure. In order to quantitatively investigate the fractal characteristics of the surface tracking pattern, the dielectric breakdown model has been employed to numerically generate the surface tracking pattern. In dielectric breakdown model, the pattern growth is determined stochastically by a probability function depending on the local electric potential difference. For the computation of the electric potential for all points of the lattice, a two-dimensional discrete Laplace equation is solved by mean of the successive over-relaxation method combined to the Gauss-Seidel method. The box counting method has been used to calculate the fractal dimensions of the simulated patterns with various exponent $\eta$ and breakdown voltage $\phi_b$. As a result of the simulation, it is found that the fractal nature of the surface tracking pattern depends strongly on $\eta$ and $\phi_b$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.249-251
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• 2003

This paper discribes the analysis of the breakdown voltage characteristics of SOI LIGBT with dual epi-layer. In case of SOI LIGBT with dual epi-layer, if we used high doping concentration in epi-layer, we obtained higher breakdown voltage compared with typical device because of charge compensation effect, and we obtained low on-state resistivity characteristic in the same breakdown voltage. In this paper, we analyzed on-state and off-state characteristics of SOI LIGBT with dual epi-layer. Breakdown voltage of proposed LIGBT was shown 125V when $T_1=T_2=2.5{\mu}m$, $N_1=7{\times}10^{15}/cm^3$ and $N_2=3{\times}10^{15}/cm^3$, respectively Although we used high doping concentration and thin epi-layer thickness, breakdown voltage was increased compared with conventional devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.227-228
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• 2007

Although many studies have been carried out about binary gas mixtures with $SF_6$, few studies were presented about breakdown characteristics of $SF_6/CF_4$ mixtures. At present study the breakdown characteristics of SFJCF4 mixtures in uniform field was performed. The experiments were carried out under AC and standard lightning impulse (SLI) voltages. The sphere-sphere electrode whose gap distance was 1 mm was used in a test chamber. $SF_6/CF_4$ mixtures contained from 0 to 100% $SF_6$ and the experimental gas pressure ranged from 0.1 to 0.4 MPa. The results show that addition of $SF_6$ to $CF_4$ increase AC and SLI breakdown voltages. Under AC voltages the breakdown voltages of each mixture were linearly increased according to the quantity of $SF_6$. However under SLI voltages the breakdown voltages of each mixture were similar.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.4
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• pp.214-217
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• 2017

An IGBT (insulated gate bipolar transistor) device has an excellent current-conducting capability. It has been widely employed as a switching device to use in power supplies, converters, solar inverters, and household appliances or the like, designed to handle high power. The aim with IGBT is to meet the requirements for use in ideal power semiconductor devices with a high breakdown voltage, an on-state voltage drop, a high switching speed, and high reliability for power-device applications. In general, the concentration of the drift region decreases when the breakdown voltage increases, but the on-resistance and other characteristics should be reduced to improve the breakdown voltage and on-state voltage drop characteristics by optimizing the design and structure changes. In this paper, using the T-CAD, we designed the NPT-IGBT (non punch-through IGBT) and FS-IGBT (field stop IGBT) and analyzed the electrical characteristics of those devices. Our analysis of the electrical characteristics showed that the FS-IGBT was superior to the NPT-IGBT in terms of the on-state voltage drop.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.2
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• pp.363-369
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• 2017

This paper presents the experimental results related to soil ionization and electrical breakdown in a concentric hemispherical electrode system under lightning impulse voltages. Dynamic voltage-current and impedance-time characteristics of soil ionization were measured and analyzed. Also the electrical breakdowns of the soil gap were investigated. The time-lag to the peak current corresponds to the soil ionization propagation. The time of ionization propagation in wet sand is found to decrease with increasing the impulse currents. A drastic decrease in ground resistance was observed during the impulse current spreading in sand. The electrical breakdown appears at the wave tail of impulse voltage and results in a wide scatter in V-t curves. The voltage-current curves have a fan-like shape attributed to ionization processes which result in increasing current and decreasing voltage.