• Journal of the Korea Organic Resources Recycling Association
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• v.9 no.4
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• pp.125-134
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• 2001

The purpose of this study is to provide basic information for a future countermeasure municipal and to establish several wastes policy after investigating solid wastes from Sunchon City. In addition, this research can be supported to manage of recycling plant and to reuse plant of each wastes. Results are as bellows after checking up and analysis type of waste in Sunchon city Unit solid waste generation rate from single family is $0.50kg/person{\cdot}day$, and total solid wastes are 41.9ton/day. Unit solid waste generation rate from apartments is $0.45kg/person{\cdot}day$, and solid wastes generation is 55.5ton/day. Unit solid waste generation rate from agricultural is $0.22kg/person{\cdot}day$ and total solid wastes are 13.5ton/day. That show total amount of municipal solid wastes from residential are 110.9ton/day. Unit solid waste generation rate from traditional markets is $1.85kg/person{\cdot}day$, and solid waste total volume is 5,400kg/day. Unit solid waste generation rate from small store is $2.03kg/person{\cdot}day$, and solid waste total are 25,101kg/day. Therefore, this show that total wastes are 30.50kg from downtown and commercial area. Solid waste quantity from Industrial area (Factory region) is 8.5ton and in case of school and hospitals are 7.2kg/day and 3.0kg/day. Solid waste amount from Institutional is 6.6kg/day. Food wastes were eliminated from municipal solid wastes as standard 63.4ton/day, and combustible wastes were 126.9ton/day. If it schedule about 5 years (by 2006) as durable year for food wastes treatment plant, it is expected 42.5ton/day for treatment capacity. We can judge that it is effective to be set 2 lines equipment ${\times}25ton/day$ as treatment ability under considering unexpected working condition such as any repair, trouble and an electrical load. If it schedule about 10 years (by 2011) as durable year for food wastes treatment plant, it is expected 150 ton/day for treatment capacity. We can conclude that it is effective to be set 2 lines equipment ${\times}80ton/day$ as treatment ability under considering working condition such as low loaded operating and the repair for incineration.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.22 no.6
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• pp.599-609
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• 2021

A novel grounding system, which is presented in IEC 60364, has been adopted since 2021. A safety evaluation for the human body on the grounding system is required due to the various characteristics of the touch voltage and current passing when the human body experiences an electric shock. The Korea Electrical Safety Corporation (KESCO) and Korea Electric Association (KEA) have been conducting a safety technical education on the grounding system. On the other hand, it is difficult to instruct the electrical safety manager because of a lack of safety evaluations for the test equipment on the grounding system. Therefore, this paper modeled and implemented a test device for a safety evaluation depending on the grounding system of IEC 60364. Namely, this paper presents the modeling of the test device for a safety evaluation using PSCAD/EMTDC S/W, which is composed of an AC grid section, s test device section on the grounding system, and a sub-device section. This paper implemented a test device for safety evaluation, which consisted of an AC grid section, TT grounding system section, TN-S grounding system section, and monitoring section. From the simulation and test results with the safety characteristics of the human body in the TT and TN-S grounding system, when the fault impedances are 0[Ω], 10[Ω], and 100[Ω], the currents passing through the human body in the TT grounding system are 104[mA], 87.4[mA], and 35.5[mA], respectively. The corresponding currents in the TN-S grounding system are 54.9[mA], 4.1[mA], and 0.4[mA], respectively. Based on the results, the protection performance for an electric shock to the human body in the TN-S system is better than the TT system. This can be improved when the existing grounding system is changed from the TT system to the TN-S system.

• Journal of Korean Society of Disaster and Security
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• v.10 no.1
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• pp.85-90
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• 2017

The purpose of this study is to investigate the effect of vertical and horizontal refraction on the lower part of the power supply and control system of various facilities and machinery that use electricity, so that the power distribution system, which is an important electric facility installed in buildings and public facilities, Type earthquake resistant pads to protect the substructure and prevent short-circuiting on the upper part of the system. The GR-63-CORE (Scale 8.3 class) It is earthquake disaster prevention and disaster prevention technology that satisfies seismic performance. As a research result, it is possible to protect the electricity and communication infrastructure, which can contribute to shortening the time for recovering the electric facilities to the normal state in case of an earthquake, and preventing the fire caused by the destruction of the electricity supply facility in case of an earthquake. As a result, it is possible to minimize the spread of fire that occurs when a large-scale earthquake occurs and to minimize the damage of people and damage to property, and it can contribute to the securing of electric infrastructure that enables citizens to quickly recover to daily life even after suffering a major earthquake. In addition, the technology can be applied to ensure the seismic resistance of the equipment in the communication and computer room, and it can be applied to various fields where the facility function can be stopped due to the shaking of the earthquake base.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.77-77
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• 2000

Titanium oxide (TiO2) thin films have valuable properties such as a high refractive index, excellent transmittance in the visible and near-IR frequency, and high chemical stability. Therefore it is extensively used in anti-reflection coating, sensor, and photocatalysis as electrical and optical applications. Specially, TiO2 have a high dielectric constant of 180 along the c axis and 90 along the a axis, so it is highlighted in fabricating dielectric capacitors in micro electronic devices. A variety of methods have been used to produce patterned self-assembled monolayers (SAMs), including microcontact printing ($\mu$CP), UV-photolithotgraphy, e-beam lithography, scanned-probe based micro-machining, and atom-lithography. Above all, thin film fabrication on $\mu$CP modified surface is a potentially low-cost, high-throughput method, because it does not require expensive photolithographic equipment, and it produce micrometer scale patterns in thin film materials. The patterned SAMs were used as thin resists, to transfer patterns onto thin films either by chemical etching or by selective deposition. In this study, we deposited TiO2 thin films on Si (1000 substrateds using titanium (IV) isopropoxide ([Ti(O(C3H7)4)] ; TIP as a single molecular precursor at deposition temperature in the range of 300-$700^{\circ}C$ without any carrier and bubbler gas. Crack-free, highly oriented TiO2 polycrystalline thin films with anatase phase and stoichimetric ratio of Ti and O were successfully deposited on Si(100) at temperature as low as 50$0^{\circ}C$. XRD and TED data showed that below 50$0^{\circ}C$, the TiO2 thin films were dominantly grown on Si(100) surfaces in the [211] direction, whereas with increasing the deposition temperature to $700^{\circ}C$, the main films growth direction was changed to be [200]. Two distinct growth behaviors were observed from the Arhenius plots. In addition to deposition of THe TiO2 thin films on Si(100) substrates, patterning of TiO2 thin films was also performed at grown temperature in the range of 300-50$0^{\circ}C$ by MOCVD onto the Si(100) substrates of which surface was modified by organic thin film template. The organic thin film of SAm is obtained by the $\mu$CP method. Alpha-step profile and optical microscope images showed that the boundaries between SAMs areas and selectively deposited TiO2 thin film areas are very definite and sharp. Capacitance - Voltage measurements made on TiO2 films gave a dielectric constant of 29, suggesting a possibility of electronic material applications.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.39C no.10
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• pp.896-908
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• 2014

The electrical medical device market have been expanded since the public interest in healthy living that has deepened together with the global health trend of the aging population. The external hand-held ultrasonic probe is a frequently approved medical device and it is commonly used in the clinical field. However, there is no obvious standard or a guideline in Korea on regarding evaluation of performance of such external hand-held ultrasonic probe for approval and quality management. In this study, local and foreign reference standards were reviewed to propose performance test standards and methods after conducting characteristic of probe, market, and permission status. In addition, such proposed test items were validated to develop a draft guideline that is internationally harmonized for performance evaluation. This study is expected not only improve the quality and performance of the external hand-held ultrasonic probe but also contribute to securing consistency of permission and evaluation works for approval.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.119-119
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• 2011

This study examined the synthesis of large area graphene and the change of its characteristics depending on the ratio of CH4/H2 by using the thermal CVD methods and performed the experiments to control the electron-hole conduction and Dirac-point of graphene by using chemical doping methods. Firstly, with regard to the characteristics of the large area graphene depending on the ratio of CH4/H2, hydrophobic characteristics of the graphene changed to hydrophilic characteristics as the ratio of CH4/H2 reduces. The angle of contact also increased to 78$^{\circ}$ from 58$^{\circ}$. According to the results of Raman spectroscopy showing the degree of defect, the ratio of I(D)/I(G) increases to 0.42% from 0.25% and the surface resistance also increased to 950 ${\Omega}$ from 750 ${\Omega}$/sq. As for the graphene synthesis at the high temperature of 1,000$^{\circ}$ by using CH4/H2 in a Cu-Foil, the possibility of graphene formation was determined as a function of the ratio of H2 included in the fixed quantity of CH4 as per specifications of every equipment. It was observed that the excessive amount of H2 prevented graphene from forming, as extra H-atoms and molecules activated the reaction to C-bond of graphene. Secondly, in the experiment for the electron-hole conduction and the Dirac-point of graphene using the chemical doping method, the shift of Dirac-point and the change in the electron-hole conduction were observed for both the N-type (PEI) and the P-type (Diazonium) dopings. The ID-VG results show that, for the N-type (PEI) doped graphene, Dirac-point shifted to the left (-voltage direction) by 90V at an hour and by 130 V at 2 hours respectively, compared to the pristine graphene. Carrier mobility was also reduced by 1,600 cm2/Vs (1 hour) and 1,100 cm2/Vs (2 hours), compared to the maximum hole mobility of the pristine graphene.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.4
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• pp.163-169
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• 2019

Sn-Pb solder alloys in electronics rapidly has been replaced to Pb free solder alloys because of various environmental regulations such as restriction of hazardous substances directive (RoHS), European Union waste electrical, waste electrical and electronic equipment (WEEE), registration evaluation authorization and of chemicals (REACH) etc. Because Sn58%Bi (in wt.%) solder alloy has low melting point and higher mechanical properties than that of Sn-Pb solder, it has been studied to manufacture electronic components. However, the reliability of Sn58%Bi solder could be lowered because of the brittleness of Bi element included in the solder alloy. Therefore, we observed the microstructures of Sn58%Bi composite solders with various contents of Sn-decorated multiwalled carbon nanotube (Sn-MWCNT) particles and evaluated bonding strength of the FR-4 components assembled with Sn58%Bi composite solder. Also, microstructures and bonding strengths of the Sn58%Bi composite solder joints were evaluated with the number of reflows from 1 to 7 times, respectively. Bonding strengths and fracture energies of the Sn58%Bi composite solder joints were measured by die shear test. Microstructures and fracture modes were observed with scanning electron microscope (SEM). Microstructures in the Sn58%Bi composite solder joints were finer than that of only Sn58%Bi solder joint. Bonding strength and fracture energy of Sn58%Bi composite solder including 0.1 wt.% of Sn-decorated MWCNT particles increased up to 20.4% and 15.4% at 5 times in reflow, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.4
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• pp.301-307
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• 2002

Direct bonded SOI wafer pairs with $Si ll SiO_2/Si_3N_4 ll Si$ the heterogeneous insulating layers of SiO$_2$-Si$_3$N$_4$are able to apply to the micropumps and MEMS applications. Direct bonding should be executed at low temperature to avoid the warpage of the wafer pairs and inter-diffusion of materials at the interface. 10 cm diameter 2000 ${\AA}-SiO_2/Si(100}$ and 560 $\AA$- ${\AA}-Si_3N_4/Si(100}$ wafers were prepared, and wet cleaned to activate the surface as hydrophilic and hydrophobic states, respectively. Cleaned wafers were pre- mated with facing the mirror planes by a specially designed aligner in class-100 clean room immediately. We employed a heat treatment equipment so called fast linear annealing(FLA) with a halogen lamp to enhance the bonding of pre mated wafers We kept the scan velocity of 0.08 mm/sec, which implied bonding process time of 125 sec/wafer pairs, by varying the heat input at the range of 320~550 W. We measured the bonding area by using the infrared camera and the bonding strength by the razor blade clack opening method, respective1y. It was confirmed that the bonding area was between 80% and to 95% as FLA heat input increased. The bonding strength became the equal of $1000^{\circ}C$ heat treated $Si ll SiO_2/Si_3N_4 ll Si$ pair by an electric furnace. Bonding strength increased to 2500 mJ/$\textrm{m}^2$as heat input increased, which is identical value of annealing at $1000^{\circ}C$-2 hr with an electric furnace. Our results implies that we obtained the enough bonding strength using the FLA, in less process time of 125 seconds and at lowed annealing temperature of $400^{\circ}C$, comparing with the conventional electric furnace annealing.

• Resources Recycling
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• v.26 no.1
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• pp.69-77
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• 2017

Used small household appliances(small e-waste) consists of a variety of complex materials and components. The small e-waste is mainly composed of plastics and an important potential source of waste plastic. The black plastics, particularly are very difficult to separate by resin type and therefore these are mainly recycled in the form of a mixtures. In the present study, the sorting technologies such as gravity and electro static separation, near-infrared ray(NIR) and IR/Raman optical sorting separation on mixture of black plastics were analyzed and their limitations on sorting process were also investigated. The Laser Induced Breakdown Spectroscopy(LIBS) spectrum of each black plastics was used for identification of black plastics by resin type, and after analyzing the normalization operation, Principal Component Analysis(PCA) was carried out. The spectrum data was optimized through PCA process. In order to improve the identification accuracy and sorting efficiency of black plastics, it is necessary to design a classifier with high efficiency and to improve the performance and reliability of the classifier by applying the field of intelligent algorithms.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.7
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• pp.2549-2558
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• 2010

A Remote Vital Sign Monitor is an in-home healthcare system designed to wirelessly monitor core-body temperature. The Remote Vital Sign Monitor provides accuracy and features which are comparable to hospital equipment while minimizing cost with ease-of-use. It has two parts, a bandage and a monitor. The bandage and the monitor both use the Chipcon2430(CC2430) which contains an integrated 2.4GHz Direct Sequence Spread Spectrum radio. The CC2430 allows Remote Vital Sign Monitor to operate at over a 100-foot indoor radius. A simple user interface allows the user to set an upper temperature and a lower temperature that is monitored with respect to the core-body temperature. If the core-body temperature exceeds the one of two defined temperatures, the alarm will sound. The alarm is powered by a low-voltage audio amplifier circuit which is connected to a speaker. In order to accurately calculate the core-body temperature, the Remote Vital Sign Monitor must utilize an accurate temperature sensing device. The thermistor selected from GE Sensing satisfies the need for a sensitive and accurate temperature reading. The LCD monitor has a screen size that measures 64.5mm long by 16.4mm wide and also contains back light, and this should allow the user to clearly view the monitor from at least 3 feet away in both light and dark situations.