• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권4호
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• pp.147-151
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• 2002

The resistances of metal2 contact to metall and poly Si are checked by various RF etch conditions in terms of pre-cleaning. The changes of resistance are evaluated by statistical analysis method(SAS) for the AC bias power, coil power and RF target. The contact area on poly Si is shown by TEM image and the distributions of contact resistance according to ar etch target and RTP are investigated. The RTP groups have larger variations than normal RF etch targets. When the RF etch target becomes lower and coil power becomes higher, the resistances of metal2 contact to metals and poly Si have lower contact resistance. But the condition of AC bias power did not satisfied low meta12 contacts resistance for metall and poly Si simultaneously. The R-square of ststistical analysis was 0.98 for resistances of meta12 contact to poly Si and 0.87 for resistances of meta12 contact to metall.

• 한국초전도ㆍ저온공학회논문지
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• 제21권1호
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• pp.31-35
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• 2019

The lumped-parameter circuit model for a no- insulation (NI) high temperature superconductor (HTS) magnet has been well understood after many experimental and analytic studies over a decade. It successfully explains the non-linear charging behaviors of NI magnets. Yet, recently, multiple groups reported that the post-quench electromechanical behaviors of an NI HTS magnet may not be well explained by the lumped circuit model. The characteristic resistance of an NI magnet is one of the key parameters to characterize the so-called "NI behaviors" of an NI magnet and recently a few groups reported a potential that the characteristic resistance of an NI magnet may substantially vary during a quench. This paper deals with this issue, the increment of contact resistance of the no-insulation (NI) REBCO magnet during a quench and its impact on the post-quench behaviors. A 7 T 78 mm NI REBCO magnet that was previously built by the MIT Francis Bitter Magnet Laboratory was chosen for our simulation to investigate the increment of contact resistance to better duplicate the post-quench coil voltages in the simulation. The simulation results showed that using the contact resistance value measured in the liquid nitrogen test, the magnitude of the current through the coil must be much greater than the critical current. This indicates that the value of the contact resistance should increase sharply after the quench occurs, depending on the lumped circuit model.

• 한국세라믹학회지
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• 제54권1호
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• pp.66-69
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• 2017

In this study, the fabrication and electrical properties of aligned single-walled carbon nanotube (SWCNT) networks using a template-based fluidic assembly process are presented. This complementary metal-oxide-semiconductor (CMOS)-friendly process allows the formation of highly aligned lateral nanotube networks on $SiO_2/Si$ substrates, which can be easily integrated onto existing Si-based structures. To measure outstanding electrical properties of organized SWCNT devices, interfacial contact resistance between organized SWCNT devices and Ti/Au electrodes needs to be improved since conventional lithographic cleaning procedures are insufficient for the complete removal of lithographic residues in SWCNT network devices. Using optimized purification steps and controlled developing time, the interfacial contact resistance between SWCNTs and contact electrodes of Ti/Au is reached below 2% of the overall resistance in two-probe SWCNT platform. This structure can withstand current densities ${\sim}10^7A{\cdot}cm^{-2}$, equivalent to copper at similar dimensions. Also failure current density improves with decreasing network width.

• 센서학회지
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• 제16권4호
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• pp.263-269
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• 2007

Although variable resistance displacement transducer is widely applied for its technical simplicity, electrical point contact limits measurement resolution (precision). The present study introduced roller shaped structure for electrical line contact. Proto-type transducer was developed and measurement characteristics were compared with a commercialized product. When the displacement was varied with steps of 5 mm, 1 mm, and down to 0.1 mm, the correlation coefficient between resistance and displacement decreased lower than 0.9 in the commercialized product while the proto-type transducer maintained values higher than 0.99. Therefore, the measurement resolution was enhanced by approximately 10 times. Since manufacturing also seemed easier, the present results would enable more accurate and less expensive manufacturing of variable resistance displacement transducer.

• 정보저장시스템학회논문집
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• 제3권4호
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• pp.160-166
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• 2007

In this paper, the measured electrical resistance method is proposed to analyze the ramp-tab contact during the load/unload (L/UL) process. Since this method supplies the voltage change due to the resistance change, we can easily and conveniently identify the ramp-tab contact from the acoustic emission (AE) signal. At first, we carefully deposit the conductive material on the surface of the conventional ramp by sputtering method. The ratio frequency (RF) magnetron co-sputtering system is applied to accomplish the deposited double-layers on the ramp surface. One layer is the stainless steel for the conductive layer and the other is the titanium layer for the cohesive function between the ramp surface and the stainless steel layer. In order to guarantee the stiffness and damping properties of the original ramp, the deposited conductive layer is intended to have very thin thickness. After integration the proposed ramp device into the L/UL system and networking the electrical resistance circuit, the L/UL performance is experimentally evaluated by comparing the measured electrical resistance signal and AE signal.

• 전기학회논문지
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• 제57권1호
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• pp.46-51
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• 2008

Extra-high voltage(EHV) disconnecting switch(DS) consists of the electrical contacts and mechanical parts which actuate the contacts. When the short-circuit condition occurs, a large amount of current flows through the electrical contact in disconnecting switches and this causes considerable temperature rise due to Joule heating. If the temperature rise is higher than the melting point of contact material, the DS contact becomes melting and cannot be usable anymore. For this reason, the analysis for capability of carrying short-circuit current in DS contacts must be performed at a design stage. Here, we proposed a numerical technique for evaluating the capability of carrying short-circuit current at electrical contacts in EHV DS. In this numerical approach, the mechanical and thermal analyses were simulated to check the capability of carrying short-circuit current. First, the applied pressure at contact parts was analyzed considering the mechanical properties, and then contact resistance was calculated by an empirical equation. Finally, thermal analysis was performed with resistance variation at electrical contacts. To verify these numerical results, the distributions of temperature in DS were experimentally measured and compared with each other. The results from experiments were agreed well with those from the proposed numerical simulations.

• International Journal of Korean Welding Society
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• 제2권1호
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• pp.1-10
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• 2002

The thermal contact conductance at different temperatures and with different electrode forces and zinc coating morphology was measured by monitoring the infrared emissions from the one dimensionally simulated contact heat transfer experiments. The contact heat transfer coefficients were presented as a function of the harmonic mean temperature of the two contacting surfaces. Using these contact heat transfer coefficients and experimentally measured temperature profiles, the electrical contact resistivities both for the faying interface and electrode-workpiece interface were deduced from the numerical analyses of the one dimension simulation welding. It was found that the average value of the contact heat transfer coefficients for the material with zinc coating (coating weight from 0 g/$mm^2$to 100 g/$mm^2$) ranges from 0.05 W/$mm^2$$^{\circ}C$ to 2.0 W/$mm^2$$^{\circ}C$ in the temperature range above 5$0^{\circ}C$ harmonic mean temperature of the two contacting surfaces. The electrical contact resistivity deduced from the one dimension simulation welding and numerical analyses showed that the ratio of electrical contact resistivity at the laying interface to the electrical contact resistivity at the electrode interface is smaller than one far both bare steel and zinc coated steel.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.349-349
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• 2010

Great performance of many semiconductor devices requirs the use of low-resistance ohmic contact. Typically, transmission line method (TLM) patterns are used to measure the specific contact resistance between silicon and metal. In this works, we investigate contact resistance for metal dependent (Cr/Ag, Ni) using TLM pattern based on silicon-on-insulator (SOI) wafer. The electrode with Ni linearly increases contact resistance as the pattern distance increase from $15{\mu}m$ to $75{\mu}m$ in accumulation part, but non-linearly increase in inversion part. In additional, the electrode with Cr/Ag linearly increases contact resistance as the pattern distance increase from $15{\mu}m$ to $75{\mu}m$ in inversion part, but non-linearly increase in accumulation part.

• 전자공학회논문지A
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• 제31A권9호
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• pp.78-88
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• 1994

The electrical properties of TiM/TiSi$_{2}$ bilayer formed by rapid thermal anneal in NH$_{3}$ ambient after the Ti film is deposited on silicon cubstrate are investigated. N$^{+}$ contact resistance slightly increases with increasing annealing temperature with P$^{+}$ contact resistance decreases. The contact resistance of N$^{+}$ contance was less than 24[.OMEGA.] but P$^{+}$ thatn that of N$^{+}$ contact but the leakage current indicates degradation of the contact at high annealing temperature for both N$^{+}$ and contacts. The leakage current of N$^{+}$ Junction was less than 0.06[fA/${\mu}m^{2}$] but P$^{+}$ contact was 0.11-0.15[fA/${\mu}m^{2}$]. The junction breakdown voltage for N$^{+}$ junction remains contant with increasing annealing temperature while P$^{+}$ junction slightly decreases. The Electrical properties of a two step annealing are better than that of one step annealing. The Tin/TiSi$_{2}$ bilayer formed by RTA in NH$_{3}$ ambient reveals good electrical properties to be applicable at ULSI contact.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.63-66
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• 1995

The ohmic characterization of Au/Te/Au/n-GaAs structure is investigated by the application of x-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, the specific contact resistance and I-V measurement. Increasing the annealing temperature, the results of XRD measurement show the sharpening of the Au-Ga peak and the increasing of the intensity of Au peak due to the crystallization. At 400$^{\circ}C$, which is the ohmic onset point, Ga$_2$Te$_3$peak gets evident and GaAs regrowth peak appears for the samples annealed at 500$^{\circ}C$. The variation of shottky contact to ohmic contact is confirmed by the I-V curve transition. The specific contact resistance of 3.8x10$\^$-5/$\Omega$-$\textrm{cm}^2$ is obtained for the sample annealed at 500$^{\circ}C$ and above 600$^{\circ}C$ the specific contact resistance increased due to the decomposition of GaAs substrate.