• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.482-483
• /
• 2011

Graphene is a good candidate for the future nano-electronic materials because it has excellent conductivity, mobility, transparency, flexibility and others. Until now, most graphene researches are focused on the nano electronic device applications, however, biological application of graphene has been relatively less reported. We have fabricated a deoxyribonucleic acid (DNA) conjugated graphene field-effect transistor (FET) and measured the electrical transport characteristics. We have used graphene sheets grown on Ni substrates by chemical vapour deposition. The Raman spectra of graphene sheets indicate high quality and only a few number of layers. The synthesized graphene is transferred on top of the substrate with pre-patterned electrodes by the floating-and-scooping method [1]. Then we applied adhesive tapes on the surface of the graphene to define graphene flakes of a few micron sizes near the electrodes. The current-voltage characteristic of the graphene layer before stripping shows linear zero gate bias conductance and no gate operation. After stripping, the zero gate bias conductance of the device is reduced and clear gate operation is observed. The change of FET characteristics before and after stripping is due to the formation of a micron size graphene flake. After combined with 30 base pairs single-stranded poly(dT) DNA molecules, the conductance and gate operation of the graphene flake FETs become slightly smaller than that of the pristine ones. It is considered that DNA is to be stably binding to the graphene layer due to the ${\pi}-{\pi}$ stacking interaction between nucleic bases and the surface of graphene. And this binding can modulate the electrical transport properties of graphene FETs. We also calculate the field-effect mobility of pristine and DNA conjugated graphene FET devices.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.1 no.4
• /
• pp.209-215
• /
• 2001

In this paper a method for analysis and modelling of coplanar transmission interconnect lines that are placed on top of silicon-silicon oxide substrates is presented. The potential function is expressed by series expansions in terms of solutions of the Laplace equation for each homogeneous region of layered structure. The expansion coefficients of different series are related to each other and to potentials applied to the conductors via boundary conditions. In the plane of conductors, boundary conditions are satisfied at $N_d$ discrete points with $N_d$ being equal to the number of terms in the series expansions. The resulting system of inhomogeneous linear equations is solved by matrix inversion. No iterations are required. A discussion of the calculated line admittance parameters as functions of width of conductors, thickness of the layers, and frequency is given. The interconnect capacitance and conductance per unit length results are given and compared with those obtained using full wave solutions, and good agreement have been obtained in all the cases treated

• Proceedings of the KOSOMBE Conference
• /
• v.1994 no.05
• /
• pp.142-145
• /
• 1994

Calcium(Ca) ion plays an important role to trigger the secretion of important neurotransmitters. Since Ca ion flows into the cell thru the ion selective channel, the conductance of which depends on the transmembrane potential, the voltage-dependent characteristic of Ca ion channel is crucial to elucidate the stimulus-secretion coupling of exocytosis. The present study measured the Ca ion currents thru a whole-cell configuration patch at the transmembrane potential clamped at various desired levels in the rat chromaffin cell. The resultant current-voltage relationship was differentiated to obtain dynamic conductance at each clamped voltage. Based on these measured data, five numerical parameters were extracted to reveal electrical properties of Ca ion inflow process thru the voltage-gated channel. The present study can be applied to comparing the electrical characteristics of Ca channel under different experimental conditions. Also, further study is warranted to model the conformational changes of the channel molecules.

• Carbon letters
• /
• v.28
• /
• pp.60-65
• /
• 2018

Linear carbon chains (LCCs) encapsulated inside the hollow cores of carbon nanotubes (CNTs) have been experimentally synthesized and structurally characterized by Raman spectroscopy and transmission electron microscopy. However, in terms of electronic conductivity, their transportation mechanism has not been investigated theoretically or experimentally. In this study, the density of states and quantum conductance spectra were simulated through density functional theory combined with the non-equilibrium Green function method. The encapsulated LCCs inside (5,5), (6,4), and (9,0) single-walled carbon nanotubes (SWCNTs) exhibited a drastic change from metallic to semiconducting or from semiconducting to metallic due to the strong charge transfer between them. On the other hand, the electronic change in the conductance value of LCCs encapsulated inside the (7,4) SWCNT were in good agreement with the superposition of the individual SWCNTs and the isolated LCCs owing to the weak charge transfer.

• Journal of Sensor Science and Technology
• /
• v.14 no.5
• /
• pp.331-336
• /
• 2005

The influence of water molecule on the electrical properties of single-walled carbon nanotube field effect transistors (SWNT-FETs) was reported. Conductance suppression was observed with the increase of the humidity. This can be explained by doping of the SWNT-FETs, which has p-type semiconductor characteristic, with the water molecules acting as an electron donor. However, after 65 % of humidity, conductance of the SWNT-FETs started to increase again, due to the opening of electron channels. Upon annealing at $400^{\circ}C$ in Ar atmosphere, conductance increases more than 500 %, and the threshold voltage shifts toward further positive gate voltages. The results of this experiment support possible application of single-walled carbon nanotubes for humidity sensing material.

• Journal of the Korean Society of Groundwater Environment
• /
• v.2 no.2
• /
• pp.78-84
• /
• 1995

In 1983, 83 Wenner vertical electrical sounding(VES)s and 22 pumping tests had been carried out by Korea Agricultural Development Corporation(KADC) in Guam Myun, Yeoju Gun, Kyounggi Province. Also, 10 boreholes had been constructed in the area. Using these data electrical and hydraulic properties of aquifer in the Ganam area are investigated in this study. Assuming that the underground is 1-D, VES data are analyzed. Data analysis shows that the subsurface of study area can be interpreted as 4-layer structure and the 3rd layer which is regarded as aquifer has mean thickness of 10 m and mean resistivity of 506 ohm-m and rests on resistive bedrock. Under the circumstances, as most part of electric current flows parallel to the bedding, longitudinal unit conductance is an important parameter controlling VES curves and very closely correlates with transmissivity of aquifer in the study area. Thus, relation between longitudinal unit conductance and transmissivity is investigated in this study. Since resistivity and thickness of each layer are obtained from interpretation of VES data, the relations between transmissivity and resistivity, and between hydraulic conductivity and resistivity are also studied. Studies of such relations show that longitudinal conductance is proportional to transmissivity, and resistivity is inversely proportional to transmissivity and hydraulic conductivity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1992.05a
• /
• pp.91-96
• /
• 1992

The nonvolatile SNOSFET EEPROM memory devices with the channel width and iength of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$], 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$] and 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$] were fabricated by using the actual CMOS 1 [Mbit] process technology. The charateristics of I$\_$D/-V$\_$D/, I$\_$D/-V$\_$G/ were investigated and compared with the channel width and length. From the result of measuring the I$\_$D/-V$\_$D/ charges into the nitride layer by applying the gate voltage, these devices ere found to have a low conductance state with little drain current and a high conductance state with much drain current. It was shown that the devices of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$] represented the long channel characteristics and the devices of 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$] and 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$] represented the short channel characteristics. In the characteristics of I$\_$D/-V$\_$D/, the critical threshold voltages of the devices were V$\_$w/ = +34[V] at t$\_$w/ = 50[sec] in the low conductance state, and the memory window sizes wee 6.3[V], 7.4[V] and 3.4[V] at the channel width and length of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$], 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$], 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$], respectively. The positive logic conductive characteristics are suitable to the logic circuit designing.

• Korean Journal of Fisheries and Aquatic Sciences
• /
• v.10 no.4
• /
• pp.205-212
• /
• 1977

The properties of sea water in deep-sea are still quite poorly understood, even though those of the surface water have been sufficiently investigated. In this study, the specific conductance of sea water was measured under the circumstances : pressure of 1 to 2,000 bars and temperature 10 to $35^{\circ}C$ as well as over the concentration of 6.228 to 19.372 per mil chloronity. The specific conductance gave the linearity with the given pressure. The initial slope, ${\triangle}k/{\triangle}P$ of the specific conductance n versus the pressure P over the pressure 1 to 1,000 bars showed a large positive value, but the second slope over the pressure 1,000 to 2,000 bars was relatively less positive value. And our equations were comparable with the empirical formular obtained by Horns et al. (1963).

• BMB Reports
• /
• v.44 no.10
• /
• pp.635-646
• /
• 2011

Due to its high external and low internal concentration the $Ca^{2+}$ ion is used ubiquitously as an intracellular signaling molecule, and a great many $Ca^{2+}$-sensing proteins have evolved to receive and propagate $Ca^{2+}$ signals. Among them are ion channel proteins, whose $Ca^{2+}$ sensitivity allows internal $Ca^{2+}$ to influence the electrical activity of cell membranes and to feedback-inhibit further $Ca^{2+}$ entry into the cytoplasm. In this review I will describe what is understood about the $Ca^{2+}$ sensing mechanisms of the three best studied classes of $Ca^{2+}$-sensitive ion channels: Large-conductance $Ca^{2+}$-activated $K^+$ channels, small-conductance $Ca^{2+}$-activated $K^+$ channels, and voltage-gated $Ca^{2+}$ channels. Great strides in mechanistic understanding have be made for each of these channel types in just the past few years.

• Journal of the Korea Computer Industry Society
• /
• v.6 no.5
• /
• pp.783-790
• /
• 2005

In this paper, we have simulated a Symmetric Dual-gate Single-Si TFT which has three split floating n+ zones. This structure reduces the kink-effect drastically and improves the on-current. Due to the separated floating n+ zones, the transistor channel region is split into four zones with different lengths defined by a floating n+ region, This structure allows an effective reduction of the kink-effect depending on the length of two sub-channels. The on-current of the proposed dual-gate structure is 0.9mA while that of the conventional dual-gate structure is 0.5mA at a 12V drain voltage and a 7V gate voltage. This result shows a 80% enhancement in on-current. Moreover we observed the reduction of electric field in the channel region compared to conventional single-gate TFT and the reduction of the output conductance in the saturation region. In addition, we also confirmed the reduction of hole concentration in the channel region so that the kink-effect reduces effectively.