• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.67-69
• /
• 2006

Capacitance and loss values of pentacene MIS capacitors with different thicknesses are measured as a function of frequency for the modeling of the devices. The equivalent circuit for the ideal MIS capacitor is adopted to model the obtained admittance, so the values of $C_i,\;C_d,\;C_b$, and $R_b$ are determined for each pentacene thickness. In the loss curve, broader loss peaks are observed in measurement than the modeling results regardless of the pentacene thickness. By considering the effects of dispersive charge transport in bulk semiconductor, more accurate modeling results are obtained.

• Journal of Sensor Science and Technology
• /
• v.14 no.6
• /
• pp.402-408
• /
• 2005

This paper describes the optimal design of a multi-layered surface plasmon resonance sensors to meet various specifications and improve some physical parameters. Dip 3 dB bandwidth and depth were chosen as design parameters and the objective function was the norm of the difference between design parameters and target values. The design variables are thicknesses of each layer and to obtain the design parameters, the optical admittance method was employed. The (1+1) evolution strategy was employed as an optimization tool. By applying the proposed optimization procedure to a 3-layered sensor, the optimized design variables considerably improved the 3 dB bandwidth by 4.8 nm and the dip depth by 1.1 dB.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.415-418
• /
• 2000

In this paper, we calculated equivalent circuit of Langevin type ultrasonic vibrator and designed a vibrator whose resonant frequency is 50(KHz). FEA (Finite Element Analysis) was employed to calculate the resonant frequencies and maximum displacements of designed vibrators. The computer calculated resonant frequencies were approached to the designed one. As AC voltage input the maximum displacements were shown sinusoidal changes. Terminal input admittance over a frequency range spanning the resonant frequency were calculated. ANSYS was employed to calculate resonant frequencies, displacements and terminal input admittance of vibrators

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.21 no.10
• /
• pp.1094-1102
• /
• 2010

In this paper, the problem of electromagnetic transmission via slits in a cavity inside conducting screen of finite thickness is considered for the case that the TE(to the slit axis) polarized plane wave is incident on the slit in conducting screen. Using the method of moments the variations of the transmitted power through the slits are obtained and compared with those computed from an equivalent circuit constructed using an equivalent slit admittance. It is found that the effective slit width of a narrow slit, at resonance, becomes $1/{\pi}$ wavelengths independently of the actual slit width. The transmission resonance phenomena in the proposed geometry are explained in connection with the variations of an equivalent admittance of the slit in the cavity.

• Journal of Power Electronics
• /
• v.18 no.3
• /
• pp.853-862
• /
• 2018

Frequency coupling in the phase domain is a recently reported phenomenon for phase locked loop (PLL) based three-phase grid-inverter systems. This paper investigates the mechanism and stabilization method for the frequency coupling to the stability of grid-inverter systems. Self and accompanying admittance models are employed to represent the frequency coupling characteristics of the inverter, and a small signal equivalent circuit of a grid-inverter system is set up to reveal the mechanism of the frequency coupling to the system stability. The analysis reveals that the equivalent inverter admittance is changed due to the frequency coupling of the inverter, and the system stability is affected. In the end, retuning the bandwidth of the phase locked loop is presented to stabilize the three-phase grid-inverter system. Experimental results are given to verify the analysis and the stabilization scheme.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1996.11a
• /
• pp.300-302
• /
• 1996

Using the AC and DC methods we have studied th electrical properties of ZnO added TiO$_2$. The electrical conductivity of ZnO added TiO$_2$ was nearly unchanged with increasing the content of ZnO. Ac conductivity and conductance as a function of Frequency showed the similar trends. The impedance, admittance, and modulus spectrums were consistent with the results of DC conductivity.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.464.1-464.1
• /
• 2014

Among numerous material candidates, Cu(InxGa1-x)(SySe2-y) (CIGS) thin films have emerged as promising material candidates for thin film solar cell applications due to the high energy conversion efficiency and relatively low fabrication cost. The CIGS thin film solar cells consist of several materials, including Mo back contacts, ZnO-based window layers, and CdS buffer layers. All these materials have different crystal structures and contain quite distinct chemical elements, and hence the device characterization requires careful analyses. Most of all, identification of the major trap states resulting in the carrier recombination processes is a key step toward realization of high efficiency CIGS solar cells. We have carried out electrical investigations of CIGS thin film solar cells to specify the major trap states and their roles in photovoltaic performance. In particular, we have used the temperature-dependent transport characterizations and admittance spectroscopy. In this presentation, we will introduce some exemplary studies of DC and AC electrical characteristics of the CIGS solar cells.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.11
• /
• pp.949-955
• /
• 2009

In this study, we investigated the effects of Cr dopant (1.0 at% $Cr_2O_3$ sintered at $1000^{\circ}C$ for 1 h in air) on the bulk trap (i.e. defect) and interface state levels of ZnO using dielectric functions ($Z^*$, $M^*$, $Y^*$, $\varepsilon^*$, and $tan{\delta}$), admittance spectroscopy (AS), and impedance-modulus spectroscopy (IS & MS). For the identification of the bulk trap levels, we examine the zero-biased admittance spectroscopy and dielectric functions as a function of frequency and temperature. Impedance and electric modulus spectroscopy is a powerful technique to characterize grain boundaries of electronic ceramic materials as well. As a result, three kinds of bulk defect trap levels were found below the conduction band edge of ZnO in 1.0 at% Cr-doped ZnO (Cr-ZnO) as 0.11 eV, 0.21 eV, and 0.31 eV. The overlapped defect levels ($Zn^{..}_i$ and $V^{\cdot}_0$) in admittance spectra were successfully separated by the combination of dielectric function such as $M^*$, $\varepsilon^*$, and $tan{\delta}$. In Cr-ZnO, the interfacial state level was about 1.17 eV by IS and MS. Also we measured the resistance ($R_{gb}$) and capacitance ($C_{gb}$) of grain boundaries with temperature using impedance-modulus spectroscopy. It have discussed about the stability and homogeneity of grain boundaries using distribution parameter ($\alpha$) simulated with the Z"-logf plots with temperature.

• Proceedings of the KIEE Conference
• /
• 1993.07a
• /
• pp.120-123
• /
• 1993

This paper presents the developing a new algorithm for detecting the Back fed Earth Fault in three wire-unigrounded distribution system by zero sequence admittance. So called "Backfed Earth Fault" of the electric power distribution line refers to a class of earth faults that the load-side line only is grounded, following after the distribution line broken into two parts, the source-side and the load-side. Because its mechanism differs from that of other earth faults, it is therefore, required to examine. This paper deals with the detailed software of the digital protective relay for Backfed earth fault. In order to prove that the proposed schemes is good, we performed off-line simulation using data from EMTP and ETSA(Electrcity Trust Of South Austrilia). It is shown that the suggested algorithm is never mal operated.

• Journal of the Korean institute of surface engineering
• /
• v.56 no.4
• /
• pp.227-232
• /
• 2023

In this study, complex admittance as a function of temperature and frequency was measured to analyze the important relaxation properties of lead scandium niobate, which is physically important, although it is not an environmentally friendly electrical and electronic material, including lead. Lead scandium niobate was synthesized by heat treating the solid oxide, and the conductance, susceptance and capacitance were measured as a function of temperature and frequency from the temperature dependence of the RLC circuit. The relaxation characteristics of lead scandium niobate were found to be affected by contributions such as grain size, grain boundary characteristics, space charge, and dipole arrangement. As the temperature rises, the maximum admittance and susceptance increase in one direction, but the resonance frequency decreases below the transition temperature but increases after the phase transition.