한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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Modeling of pentacene MIS capacitors with admittance measurements and the effects of dispersive charge transport

  • Jung, Keum-Dong (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Lee, Cheon-An (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Park, Dong-Wook (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Park, Byung-Gook (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Shin, Hyung-Cheol (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Lee, Jong-Duk (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University)
  • Published : 2006.08.22
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Abstract

Capacitance and loss values of pentacene MIS capacitors with different thicknesses are measured as a function of frequency for the modeling of the devices. The equivalent circuit for the ideal MIS capacitor is adopted to model the obtained admittance, so the values of $C_i,\;C_d,\;C_b$, and $R_b$ are determined for each pentacene thickness. In the loss curve, broader loss peaks are observed in measurement than the modeling results regardless of the pentacene thickness. By considering the effects of dispersive charge transport in bulk semiconductor, more accurate modeling results are obtained.

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