한국정보디스플레이학회:학술대회논문집
- 2006.08a
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- Pages.67-69
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- 2006
Modeling of pentacene MIS capacitors with admittance measurements and the effects of dispersive charge transport
- Jung, Keum-Dong (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
- Lee, Cheon-An (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
- Park, Dong-Wook (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
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Park, Byung-Gook
(Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
- Shin, Hyung-Cheol (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
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Lee, Jong-Duk
(Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University)
- Published : 2006.08.22
Abstract
Capacitance and loss values of pentacene MIS capacitors with different thicknesses are measured as a function of frequency for the modeling of the devices. The equivalent circuit for the ideal MIS capacitor is adopted to model the obtained admittance, so the values of
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