• Proceedings of the KIEE Conference
• /
• 1993.07b
• /
• pp.558-560
• /
• 1993

The dielectric properties of pressboard depend on the chemical and fine structures as well as on the macroscopic structure of pressboard. The investigate on the dielectric characteristics of pressboard, therefore, provides an important approach to an understanding of the correlation between the characteristics and the structure of pressboard. The purpose of this research is to investigate the dielectric properties of pressboard.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.4
• /
• pp.348-351
• /
• 2007

Recently, Nanotechnology becomes a major issue in most part of industries. Nanotechnology is expected to develop various application products due to nano material mired composites is improved physical and electrical properties compared to conventional composites materials. Dielectric and insulation materials need to develop and improve like other field about nanotechnology. In this paper, we reported dielectric dispersion by size(no filler, $1.2{\mu}m$, 500 nm, 10 nm), frequencies(60, 120, 1 kHz), and temperatures($30{\sim}170^{\circ}C$). Dielectric constant of composites materials with filler shows higher than composites materials without filler and increased depending on rising temperatures in low frequency region. It was the effect that nano-filler and impurities in composites contributed to electrical conductivity. And dielectric properties depending on temperatures shows to change in low frequency region dramatically We analyzed interfacial polarization in low frequency region($10^{-2}$ Hz) and oriented polarization in high frequency region($10^{-5{\sim}6}$ Hz) on composites materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.35 no.2
• /
• pp.103-118
• /
• 2022

With the recent increase in demand for electronic devices, multi-layer ceramic capacitors (MLCCs) have become the most important core component. In particular, the next-generation MLCC with extremely high reliability is required for the 4^th industrial revolution and electric vehicle applications. Therefore, it is necessary to develop dielectric ceramic materials with high dielectric properties and reliability. During the decades, electrical properties of BaTiO₃ based dielectric ceramics, which have been widely used in MLCC industrial field, have been improved by microstructure and defect chemistry control. However, electrical properties of BaTiO₃ have reached their limits, and new types of dielectric materials have been widely studied. Based on these backgrounds, this report presents the recent development trends of BaTiO₃-based dielectric materials for the next-generation MLCCs, and suggests promising candidates to replace BaTiO₃ ceramics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.05e
• /
• pp.61-64
• /
• 2003

In the response to an increasing demand for electrical energy, much effort aimed to develop and commercialise HTS power equipments is going on around the world. For the development, it is necessary to establish the dielectric technology in $LN_2$. Hence many types of dielectric tests should be carried out to understand the dielectric phenomena at cryogenic temperature and to gather various dielectric data. Among the many types dielectric tests, the barrier effect were conducted with the simulated electrode after analysing the insulating configuration of the pancake coil type HTS transformer. The influence of a barrier on the dielectric strength was measured according to the size and the position of the barrier. It was shown that the effectiveness, the ratio of the breakdown voltage in presence of barrier to the voltage without barrier, is highest when the barrier is placed at the needle electrode side. And the barrier effect was not depend on the electrode array. The life time to breakdown with decreasing the applied voltage was increased remarkably having wide error band but the shape parameter in Weibull distribution was almost constant.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.11
• /
• pp.1007-1013
• /
• 1998

In this paper, the dielectric properties of fabricated Polyvinylidene fluoride(PVDF, $PVF_2$) thin film with substrate temperature from 30 to at vapor deposition. The dielectric properties of PVDF thin film had been studied in the frequency range from 10Hz to 4MHz at measuring temperature between 20 and $100^{/circ}C$. The anomalous increasing in dielectric constant and dielectric loss at low frequencies and high temperature was described for PVDF thin film containing ion impurities. In particularly, ion mobility of fabricated PVDF thin film at substrate temperature at $30^{/circ}C$ decrease from $2\times10^{-5}\;to\;3.07$\times10^{-7}cm^2/V.s$ On the other hand, ion density increase abruptly from 1.49\times$$10^{13}$ to $1.5\times$10^{16}$cm^{-3}$ In spite of decreasing of ion mobility, dielectric constants and dielectric loss for PVDF thin film increase rapidly with decreasing frequency and high temperature. It was concluded that the dielectric constants and dielectric loss was related to ion density than to ion mobility at low frequency and high temperatures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07b
• /
• pp.1119-1122
• /
• 2003

In this paper, the electric field distribution in dielectric tube with one layer and spherical dielectric in water was simulated. The reactor was made up of the spherical dielectric that is diameter 2.5[mm], ${\epsilon}_r$ : 5, 100, 1000, 5000 respectively and one glass plate being 2[mm] thickness, ${\epsilon}_r$ : 5 as electrode. The discharge gap was 7[mm]. As a result of the simulation, in case of being about the same value between the dielectric constant of spherical dielectric and water, when the reactor was applied to high voltage dielectric polarization characteristic was trending toward disappearance. To get more strong electric field, the dielectric constant should be higher comparatively, Increasing the spherical dielectric constant, the location of equippotential line was shifting from the interior to the exterior.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07b
• /
• pp.1143-1146
• /
• 2003

This paper was simulated the electric field distribution in dielectric tube with two layers and spherical dielectric in water. The reactor was made up of the spherical dielectric that is diameter : 2.5[mm], ${\epsilon}_r$ : 5, 25, 100, 1000, 5000 respectively and two glass plate being 2[mm] thickness, ${\epsilon}_r$ : 5 as electrode. The discharge gap was 9[mm]. As a result of the simulation, in case of being about the same value between the dielectric constant of spherical dielectric and water, when the reactor was applied to high voltage, dielectric polarization characteristic was trending toward disappearance. To get more strong electric field, the dielectric constant should be higher comparatively, Increasing the spherical dielectric constant, the location of equippotential line was shifting from the interior to the exterior.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.4 no.1
• /
• pp.52-62
• /
• 2004

In this paper we look at the effect of Fringe-Enhanced-Barrier-lowering (FEBL) for high-K dielectric MOSFETs and the dependence of FEBL on various technological parameters (spacer dielectrics, overlap length, dielectric stack, S/D junction depth and dielectric thickness). We show that FEBL needs to be contained in order to maintain the performance advantage with scaled high-K dielectric MOSFETs. The degradation in high-K dielectric MOSFETs is also identified as due to the additional coupling between the drain-to-source that occurs through the gate insulator, when the gate dielectric constant is significantly higher than the silicon dielectric constant. The technology parameters required to minimize the coupling through the high-K dielectric are identified. It is also shown that gate dielectric stack with a low-K material as bottom layer (very thin $SiO_2$ or oxy-nitride) will be helpful in minimizing FEBL. The circuit performance issues with high-K MOS transistors are also analyzed in this paper. An optimum range of values for the dielectric constant has been identified from the delay and the energy dissipation point of view. The dependence of the optimum K for different technology generations has been discussed. Circuit models for the parasitic capacitances in high-K transistors, by incorporating the fringing effects, have been presented.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.345-348
• /
• 1999

The monolayer behaviors at the air-water interface and the dielectric properties of MI-0 LB films for complex concentration were investigated by the surface pressure-area ($\pi$-A) isotherms and dielectric constant. The molecular area was expanded with increase of metal ions concentration. It is considered that the expansion of molecular area is due to electrostatic repulsion between the polymer chains andhydrophobic increase of ionic strength. In the frequency-dependent complex dielectric constant at room temperature, the real part of dielectric constant($\varepsilon'$) is about 6.0~10.0 in the low-frequency range and is decreasing slowly upto $1O^4$Hz. It decreased abruptly near $1O^5Hz$. It seems to be dielectric dispersion in this frequency range. Also, the imaginary part of dielectric constant ($\varepsilon"$) shows a peak in $1O^5$~$1O^6Hz$. It seems to be dielectric absorption in this frequency range.ange.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.4
• /
• pp.300-305
• /
• 2000

We have investigated the dielectric and electrical characteristics of palmitic acid(PA) stearic acid(SA) and arachidic acid(AA) Langmuir-Blodgett(LB) films because these fatty acid systems have a same hydrophilic group and a different hydrophobic one(methylene group or alkyl chain length). The fatty acid systems were used as LB films and the status of the deposited films was confirmed by evaluating the transfer ratio the UV absorption and the capacitance. The dielectric characteristics such as the frequency-capacitance characteristics and the dielectric dispersion and absorption characteristics of PA SA and AA through-plane were measured. The relative dielectric constants of PA, SA and AA LB films were about 3.0~4.6, 2.7~3.0 and 2.4~3.0 respectively. That is the relative dielectric constants were decreased in proportion to the chain length of methylene group. Also the dielectric dispersion and absorption of each fatty acid LB films have arisen from spontaneous polarization of dipole polarization in the range of 10$^4$~10$^{5}$ ［Hz］. The conductivity of PA, SA and AA LB films obtained from I-V characteristics were about 9$\times$10$^{-14}$ , 3$\times$10$^{-14}$ and 5$\times$10$^{-15}$ ［S/cm］. respectively. These results have shown the insulating materials and could control the conductivity y changing the length of methylene group. Also we have confirmed that the barrier height of fatty acid systems were almost the same ones obtained from dielectric characteristics.