• Title/Summary/Keyword: Electric-field dependence

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Dependence of Extinction Ratio on the Carrier Transport in $1.55{\mu}m$ InGaAsP/InGaAsP Multiple-Quantum-Well Electroabsorption Modulators ($1.55{\mu}m$ InGaAsP/InGaAsP 다중양자우물구조 전계흡수형 광변조기에서 캐리어 수송현상이 소광특성에 미치는 영향)

  • Shim, Jong-In;Eo, Yung-Seon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.9
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    • pp.15-22
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    • 2000
  • The effects of carrier transport and input power on the extinction ratio was theoretically analyzed in a 1.55${\mu}m$ InGaAsP/InGaAsP multiple-quantum-well(MQW) electroabsorption(EA) modulator. Poisson's equation, current continuity equations for electrons and holes, and optical field distribution were self-consistently solved by considering electric field dependent absorption coefficients. The field screening effect due to the carrier accumulation in heterointerface and the space-charge region occurred more seriously at the input side of modulator as input optical intensity increased. It was revealed that extinction ratio could be steeply degraded for modulator with the length of 200${\mu}m$ when an input power exceeds 10mW. A degradation of extinction ratio due to the field screening effect would be more significantly at high-performance devices such as a 1.55${\mu}m$DFB-LD/EA-modulator integrated source where optical coupling efficiency is almost complete or a very high-speed modulator with its length as short as a few tens ${\mu}m$.

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The Effects of Environmental Dynamism on Supply Chain Commitment in the High-tech Industry: The Roles of Flexibility and Dependence (첨단산업의 환경동태성이 공급체인의 결속에 미치는 영향: 유연성과 의존성의 역할)

  • Kim, Sang-Deok;Ji, Seong-Goo
    • Journal of Global Scholars of Marketing Science
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    • v.17 no.2
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    • pp.31-54
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    • 2007
  • The exchange between buyers and sellers in the industrial market is changing from short-term to long-term relationships. Long-term relationships are governed mainly by formal contracts or informal agreements, but many scholars are now asserting that controlling relationship by using formal contracts under environmental dynamism is inappropriate. In this case, partners will depend on each other's flexibility or interdependence. The former, flexibility, provides a general frame of reference, order, and standards against which to guide and assess appropriate behavior in dynamic and ambiguous situations, thus motivating the value-oriented performance goals shared between partners. It is based on social sacrifices, which can potentially minimize any opportunistic behaviors. The later, interdependence, means that each firm possesses a high level of dependence in an dynamic channel relationship. When interdependence is high in magnitude and symmetric, each firm enjoys a high level of power and the bonds between the firms should be reasonably strong. Strong shared power is likely to promote commitment because of the common interests, attention, and support found in such channel relationships. This study deals with environmental dynamism in high-tech industry. Firms in the high-tech industry regard it as a key success factor to successfully cope with environmental changes. However, due to the lack of studies dealing with environmental dynamism and supply chain commitment in the high-tech industry, it is very difficult to find effective strategies to cope with them. This paper presents the results of an empirical study on the relationship between environmental dynamism and supply chain commitment in the high-tech industry. We examined the effects of consumer, competitor, and technological dynamism on supply chain commitment. Additionally, we examined the moderating effects of flexibility and dependence of supply chains. This study was confined to the type of high-tech industry which has the characteristics of rapid technology change and short product lifecycle. Flexibility among the firms of this industry, having the characteristic of hard and fast growth, is more important here than among any other industry. Thus, a variety of environmental dynamism can affect a supply chain relationship. The industries targeted industries were electronic parts, metal product, computer, electric machine, automobile, and medical precision manufacturing industries. Data was collected as follows. During the survey, the researchers managed to obtain the list of parts suppliers of 2 companies, N and L, with an international competitiveness in the mobile phone manufacturing industry; and of the suppliers in a business relationship with S company, a semiconductor manufacturing company. They were asked to respond to the survey via telephone and e-mail. During the two month period of February-April 2006, we were able to collect data from 44 companies. The respondents were restricted to direct dealing authorities and subcontractor company (the supplier) staff with at least three months of dealing experience with a manufacture (an industrial material buyer). The measurement validation procedures included scale reliability; discriminant and convergent validity were used to validate measures. Also, the reliability measurements traditionally employed, such as the Cronbach's alpha, were used. All the reliabilities were greater than.70. A series of exploratory factor analyses was conducted. We conducted confirmatory factor analyses to assess the validity of our measurements. A series of chi-square difference tests were conducted so that the discriminant validity could be ensured. For each pair, we estimated two models-an unconstrained model and a constrained model-and compared the two model fits. All these tests supported discriminant validity. Also, all items loaded significantly on their respective constructs, providing support for convergent validity. We then examined composite reliability and average variance extracted (AVE). The composite reliability of each construct was greater than.70. The AVE of each construct was greater than.50. According to the multiple regression analysis, customer dynamism had a negative effect and competitor dynamism had a positive effect on a supplier's commitment. In addition, flexibility and dependence had significant moderating effects on customer and competitor dynamism. On the other hand, all hypotheses about technological dynamism had no significant effects on commitment. In other words, technological dynamism had no direct effect on supplier's commitment and was not moderated by the flexibility and dependence of the supply chain. This study makes its contribution in the point of view that this is a rare study on environmental dynamism and supply chain commitment in the field of high-tech industry. Especially, this study verified the effects of three sectors of environmental dynamism on supplier's commitment. Also, it empirically tested how the effects were moderated by flexibility and dependence. The results showed that flexibility and interdependence had a role to strengthen supplier's commitment under environmental dynamism in high-tech industry. Thus relationship managers in high-tech industry should make supply chain relationship flexible and interdependent. The limitations of the study are as follows; First, about the research setting, the study was conducted with high-tech industry, in which the direction of the change in the power balance of supply chain dyads is usually determined by manufacturers. So we have a difficulty with generalization. We need to control the power structure between partners in a future study. Secondly, about flexibility, we treated it throughout the paper as positive, but it can also be negative, i.e. violating an agreement or moving, but in the wrong direction, etc. Therefore we need to investigate the multi-dimensionality of flexibility in future research.

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Statistical Properties of Geomagnetic Activity Indices and Solar Wind Parameters

  • Kim, Jung-Hee;Chang, Heon-Young
    • Journal of Astronomy and Space Sciences
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    • v.31 no.2
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    • pp.149-157
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    • 2014
  • As the prediction of geomagnetic storms is becoming an important and practical problem, conditions in the Earth's magnetosphere have been studied rigorously in terms of those in the interplanetary space. Another approach to space weather forecast is to deal with it as a probabilistic geomagnetic storm forecasting problem. In this study, we carry out detailed statistical analysis of solar wind parameters and geomagnetic indices examining the dependence of the distribution on the solar cycle and annual variations. Our main findings are as follows: (1) The distribution of parameters obtained via the superimposed epoch method follows the Gaussian distribution. (2) When solar activity is at its maximum the mean value of the distribution is shifted to the direction indicating the intense environment. Furthermore, the width of the distribution becomes wider at its maximum than at its minimum so that more extreme case can be expected. (3) The distribution of some certain heliospheric parameters is less sensitive to the phase of the solar cycle and annual variations. (4) The distribution of the eastward component of the interplanetary electric field BV and the solar wind driving function BV2, however, appears to be all dependent on the solar maximum/minimum, the descending/ascending phases of the solar cycle and the equinoxes/solstices. (5) The distribution of the AE index and the Dst index shares statistical features closely with BV and $BV^2$ compared with other heliospheric parameters. In this sense, BV and $BV^2$ are more robust proxies of the geomagnetic storm. We conclude by pointing out that our results allow us to step forward in providing the occurrence probability of geomagnetic storms for space weather and physical modeling.

Photocurrent Study on the Splitting of the Valence Band and Growth of $CdIn_2S_4$/GaAs Single Crystal Thin Film by Hot Wall Epitaxy (Hot Wall Epitaxy(HWE)법에 의해 성장된 $CdIn_2S_4$ 단결정 박막의 가전자대 갈라짐에 대한 광전류 연구)

  • Baek, Seung-Nam;Hong, Kwang-Joon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.79-80
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    • 2006
  • A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-Insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The temperature dependence of the energy band gap of the $CdIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation. $E_g(T)=2.7116 eV-(7.74{\times}10^{-4} eV)T^2/(T+434)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CdIn_2S_4$ have been estimated to be 0.1291 eV and 0.0248 eV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $AgInS_2$/GaAs epilayer. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and C1-exciton peaks for n = 1.

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Stress Induced Leakage Currents in the Silicon Oxide Insulator with the Nano Structures (나노 구조에서 실리콘 산화 절연막의 스트레스 유기 누설전류)

  • 강창수
    • Journal of the Institute of Electronics Engineers of Korea TE
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    • v.39 no.4
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    • pp.335-340
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    • 2002
  • In this paper, the stress induced leakage currents of thin silicon oxides is investigated in the ULSI implementation with nano structure transistors. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The transient current was caused by the tunnel charging and discharging of the stress generated traps nearby two interfaces. The stress induced leakage current will affect data retention in electrically erasable programmable read only memories. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between 113.4${\AA}$ and 814${\AA}$, which have the gate area $10^3cm^2$. The stress induced leakage currents will affect data retention and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses.

Junction Capacitance Dependence of Response Time for Magnetic Tunnel Junction (터널링 자기저항 소자의 접합면 정전용량에 따른 전기적 응답특성)

  • Park, S.Y.;Choi, Y.B.;Jo, S.C.
    • Journal of the Korean Magnetics Society
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    • v.12 no.2
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    • pp.68-72
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    • 2002
  • In this research, the effects of capacitance to the access time were studied at the junction area of tunneling magnetoresistance when these were used as memory devices. These results were obtained by applying electric signal input and magnetic field was not used. We applied bipolar square waves of 1MHz to the MTJ samples to obtain the results and time constant ($\tau$) calculated by observing wave responses utilizing an oscilloscope. And time constant was compared with junction area. Each part of MTJ sample, such as electrical pad, lead and contact area, was modeled as an electrical equivalent circuit based on experimental results. For the 200㎛$\times$200㎛ cell, junction capacitance was 90 pF. Also, measurement and simulation results were compared, which showed those similarity.

The Hyperfine Interaction for the FeIn2S4 by Mössbauer Spectroscopy (뫼스바우어 효과를 통한 FeIn2S4에서의 Fe2+ 초미세 상호 작용 연구)

  • Son, Bae-Soon;Kim, Sam-Jin;Kim, Chul-Sung
    • Journal of the Korean Magnetics Society
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    • v.17 no.1
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    • pp.30-33
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    • 2007
  • The $FeIn_2S_4$ exhibits an inverse spinel which Fe ions are occupied to the octahedral(B) site, while In ions are occupied to both the tetrahedral(A) and the octahedral(B) site. The $N\'{e}el$ temperature($T_N$) is determined to be 13 K. The effective moment of $FeIn_2S_4$ found to be $5.094{\mu}_B$ from the fit of Curie-Weiss inverse susceptibility for the temperature range over $T_N$, implying angular momentum contribution. The angular momentum contribution is shown in $M\"{o}ssbauer$ spectra for the antiferromagnetic ordering region($T{\leq}\;13K$), too. A weak $Fe^{2+}(B)-S^2-Fe^{2+}(B)$ interaction is responsible for a low $N\'{e}el$ temperature($T_N$) in $FeIn_2S_4$ system. The temperature dependence of electric quadrupole interaction is explained by z-axial crystalline field energy.

Performance and Variation-Immunity Benefits of Segmented-Channel MOSFETs (SegFETs) Using HfO2 or SiO2 Trench Isolation

  • Nam, Hyohyun;Park, Seulki;Shin, Changhwan
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.4
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    • pp.427-435
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    • 2014
  • Segmented-channel MOSFETs (SegFETs) can achieve both good performance and variation robustness through the use of $HfO_2$ (a high-k material) to create the shallow trench isolation (STI) region and the very shallow trench isolation (VSTI) region in them. SegFETs with both an HTI region and a VSTI region (i.e., the STI region is filled with $HfO_2$, and the VSTI region is filled with $SiO_2$) can meet the device specifications for high-performance (HP) applications, whereas SegFETs with both an STI region and a VHTI region (i.e., the VSTI region is filled with $HfO_2$, and the STI region is filled with $SiO_2$) are best suited to low-standby power applications. AC analysis shows that the total capacitance of the gate ($C_{gg}$) is strongly affected by the materials in the STI and VSTI regions because of the fringing electric-field effect. This implies that the highest $C_{gg}$ value can be obtained in an HTI/VHTI SegFET. Lastly, the three-dimensional TCAD simulation results with three different random variation sources [e.g., line-edge roughness (LER), random dopant fluctuation (RDF), and work-function variation (WFV)] show that there is no significant dependence on the materials used in the STI or VSTI regions, because of the predominance of the WFV.

Numerical Analysis of a Two-Dimensional N-P-N Bipolar Transistor-BIPOLE (2차원 N-P-N 바이폴라 트랜지스터의 수치해석-BIPOLE)

  • 이종화
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.21 no.2
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    • pp.71-82
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    • 1984
  • A programme, called BIPOLE, for the numerical analysis of twotimensional n-p-n bipolar transistors was developed. It has included the SRH and Auger recolnbination processes, the mobility dependence on the impurity density and the electric field, and the band-gap narrowing effect. The finite difference equations of the fundamental semiconductor equations are formulated using Newton's method for Poisson's equation and the divergence theorem for the hole and electron continuity equations without physical restrictions. The matrix of the linearized equations is sparse, symmetric M-matrix. For the solution of the linearized equations ICCG method and Gummel's algorithm have been employed. The programme BIPOLE has been applied to various kinds of the steady-state problems of n-p-n transistors. For the examples of applications the variations of common emitter current gain, emitter and diffusion capacitances, and input and output characteristics are calculated. Three-dimensional representations of some D.C. physical quantities such as potential and charge carrier distributions were displayed. This programme will be used for the nome,rical analysis of the distortion phenom ana of two-dimensional n-p-n transistors. The BIPOLE programme is available for everyone.

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A study on characteristics of $In_xGa_{1-x}As(0.03\leqx\leq0.11)$ epilayer by photoreflectance measuerment (Photoreflectance 측정에 의한 $In_xGa_{1-x}As(0.03\leqx\leq0.11)$ 에피층의 특성 연구)

  • 김인수;손정식;이철욱;배인호;임재영;한병국;신영남
    • Journal of the Korean Vacuum Society
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    • v.7 no.4
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    • pp.334-340
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    • 1998
  • Photoreflectance (PR) measurents have been performed on $In_xGa_{1-x}As/GaAs$ grown by molecular beam epitaxy (MBE). Bandgap $(E_0)$ of $In_xGa_{1-x}As$ epilayer measured from PR was separated as heavy-hole $(E_0(HH))$ and light-hole $(E_0(LH))$ by strain effect. The compositions and the strains of epilayer were obtained from the energy value of $E_0(HH)$ and from energy difference of $E_0(HH)$ and $E_0(LH)$, respectively. In addition, the PR signal of $E_0(LH)$ was diminished below 160 K. The interface electric field (E) of InGaAs/GaAs was increased from $0.75{\times}10^5$ V/cm to $2.66{\times}10^5$ V/cm as In composition increased, which was calculated from Franz-Keldysh oscillation (FKO) peaks. As the temperature dependence of the PR signal at x=0.09 sample, we obtained Varshni and Bose-Einstein coefficients.

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