• 한국재료학회지
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• 제33권12호
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• pp.517-524
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• 2023

BaTiO₃-Poly vinylidene fluoride (PVDF) solution was prepared by adding 0~25 wt% BaTiO₃ nanopowder and 10 wt% PVDF powder in solvent. BaTiO₃-PVDF film was fabricated by spreading the solution on a glass with a doctor blade. The output performance increased with increasing BaTiO₃ concentration. When the BaTiO₃ concentration was 20 wt%, the output voltage and current were 4.98 V and 1.03 ㎂ at an applied force of 100 N. However, they decreased when the over 20 wt% BaTiO₃ powder was added, due to the aggregation of particles. To enhance the output performance, the generator was poled with an electric field of 150~250 kV/cm at 100 ℃ for 12 h. The output performance increased with increasing electric field. The output voltage and current were 7.87 V and 2.5 ㎂ when poled with a 200 kV/cm electric field. This result seems likely to be caused by the c-axis alignment of the BaTiO₃ after poling treatment. XRD patterns of the poled BaTiO₃-PVDF films showed that the intensity of the (002) peak increased under high electric field. However, when the generator was poled with 250 kV/cm, the output performance of the generator degraded due to breakdown of the BaTiO₃-PVDF film. When the generator was matched with 800 Ω resistance, the power density of the generator reached 1.74 mW/m². The generator was able to charge a 10 ㎌ capacitor up to 1.11 V and turn on 10 red LEDs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.457-460
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• 1999

The effects of electrical positive stress on n-channel LDD and offset structured poly-Si TFT\`s have been systematically investigated in order to analyze the transfer curve\`s shift mechanism. It has been found that the LDD and offset regions behave as a series resistance that reduce the electric field near drain. Hot carrier effects are reduced because of these results. After electrical stress transfer curve’s shift and variation of the off-current are dependent upon the offset length rather than offset region’s doping concentration. Variation of the subthreshold slope is dependent upon offset region’s doping concentration as well as offset length.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 영호남 학술대회 논문집
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• pp.44-47
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• 2003

In this paper, the electric field distribution in dielectric tube with one layer and spherical dielectric($ZrO_2$) in water was simulated. The reactor was made up of the spherical dielectric that is diameter : 3.0[mm], $ZrO_2(\varepsilon_r:10)$ and one glass plate of thickness(2[mm]), $\varepsilon_r$(10) as electrode. The discharge gap was 8[mm]. To get more strong electric field, the dielectric constant should be higher comparatively. Using the spherical dielectric for water discharge in dielectric tube, the location of equipotential line was shifting from the interior to the exterior. At real water discharge experimental, ozone was measured higher dissolved ozone in water at condition of water rate(l[l/min]) and injector than condition of non-injector or 2~3[l/min].

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 영호남 학술대회 논문집
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• pp.40-43
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• 2003

In this paper, the electric field distribution in dielectric tube with one layer and spherical dielectric(glass) in water was simulated. The reactor was made up of the spherical dielectric that is diameter : 3.0[mm], glass(${\varepsilon}_r$:5) and one glass plate of thickness(2[mm]), ${\varepsilon}_r$(5) as electrode. The discharge gap was 8[mm). Toget more strong electric field, the dielectric constant should be higher comparatively. Using the spherical dielectric for water discharge in dielectric tube, the location of equipotential line was shifting from the interior to the exterior. At real water discharge experimental, $H_2O_2$ was measured higher generated $H_2O_2$ in water at condition of water rate(1[l/min]) and injector than condition of non-injector or 2-3[l/min])

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권2호
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• pp.260-264
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• 2017

Process variation effect on arch-structured gate stacked array (GSTAR) 3-D NAND flash is investigated. In case of arch-structured GSTAR, a shape of the arch channel is depending on an alignment of photo-lithography. Channel width fluctuates according to the channel hole alignment. When a shape of channel exceeds semicircle, channel width becomes longer, increasing drain current. However, electric field concentration on tunnel oxide decreases because less electric flux converges into a larger surface of tunnel oxide. Therefore, program efficiency is dependent on the process variation. Meanwhile, a radius of channel holes near the bottom side become smaller due to an etch slope. It also affects program efficiency as well as channel width. Larger hole radius has an advantage of higher drain current, but causes degradation of program speed.

• Bulletin of the Korean Chemical Society
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• 제33권8호
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• pp.2737-2740
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• 2012

The use of plants to remove toxic metals from soil (phytoremediation) is emerging as a cost-effective alternative to conventional methods for the removal of heavy metals from contaminated soil. Indian mustard (Brassica juncea) was used as the plant to accumulate high tissue concentrations of lead when grown in contaminated soil. For this study, the application of an electric field combined effectively with EDTA-enhanced phytoremediation. A stimulation of direct and alternating electric potential was compared and EDTA-enhanced phytoremediation of lead using Indian mustard has been performed. The effects of experimental parameters such as operating voltage with different concentration of EDTA, the number of graphite electrodes, and cultivation period on the removal of toxic metal were studied. Shoot lead accumulations in Indian mustard increased as the concentration of EDTA and dc electric potential was increased. Two to four folds was increased when EDTA plus a dc electric potential was applied, compared to an ac electric potential. The maximum lead accumulation in the shoots was achieved by applying EDTA plus dc electric potential with 6 graphite electrodes.

• 한국광학회지
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• 제9권2호
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• pp.86-91
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• 1998

소오다 석회유리를 기판으로 하고 전기장에 의한 $Cs^+-Na^+$ 이온교환으로 다중 모우드 평면 광도파로를 제작하였다. 광도파로의 각 모우드들에 대한 실효굴절률을 측정하였으며 변형 Fermi 함수 모양으로 맞춤한 굴절률 분포형태를 전자 현미분석기로 얻은 농도분포형태와 비교분석하여 설명하였다. 정량적인 분석결과 약 90%의 $Na^+$이온이 $Cs^+$이온으로 치환되었다. 주어진 인가전기장, 확산온도 및 확산시간으로부터 광도파로 깊이, 이동도 및 굴절률 변화를 구하는 식을 세웠다. 이 식에서 성립하는 광도파로의 깊이와 확산시간의 제곱근 사이의 선형관계 및 광도파로의 깊이와 인가전기장 사이의 선형관계를 실험으로 확인하였다.

• 조명전기설비학회논문지
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• 제17권6호
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• pp.77-82
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• 2003

본 논문에서는 강한 불평등전계를 형성시킬 수 있는 다선형전극을 강전해수 발생장치내에 설치하여 전계집중효과에 의해 발생되는 기포내의 선행방전의 형태와 기포방전이 수소이온농도와 산화환원전위반응에 미치는 영향을 검토하고자 하였다. 실험결과, 강전해수 발생장치내의 양전극측을 다선형으로 함으로써 양전극측에서 발생되는 기포내에서 비유전율 차이에 의한 기포내의 선행방전을 관찰할 수 있었다. 그리고 기포방전에 의해 발생된 이온들이 강전해수 발생장치내에 용해됨으로써 전해수의 이온농도를 증가시켰다. 이때 발생된 고농도의 이온들을 분리집속 시키고 산화환원작용을 크게 증가시켜 고농도의 강전해수를 발생시킬 수 있었다.

• 한국재난정보학회 논문집
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• 제15권1호
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• pp.28-38
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• 2019

연구목적: 본 연구는 건설 계측센서의 내구연한 저하원인 및 개선방안을 상세히 제시하여 건설구조물의 계측관리 수준향상과 계측센서의 기술발전에 기여하고자 한다. 연구방법: 건설 계측센서의 내구연한 저하원인 및 개선방안에 대하여 건설분야와 전기전자분야로 구분하여 상세한 현황을 조사하고 검토를 실시하였다. 연구결과: 건설분야는 승인 및 검수, 검사 및 시험, 검정 및 교정, 손망실율 최소화 방안 등을 조사 검토하였고, 전기전자분야는 센서패키지 및 실링, 응력집중부위 단선, 낙뢰 및 부식에 의한 손상 등을 조사 검토하였다. 결론: 건설분야와 전기전자분야에서 계측센서의 내구연한 저하원인 및 개선방안을 토대로 건설현장에 적용되는 계측센서의 내구연한이 현재보다 연장될 것으로 기대된다.

• 한국전기전자재료학회논문지
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• 제18권10호
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• pp.877-882
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• 2005

In order to fabricate a high breakdown SiC-SBD (Schottky barrier diode), we investigate an effect on metal guard ring (MGR) in breakdown characteristics of the SiC-SBD. The breakdown characteristics of MGR-type SiC-SBD is significantly dependent on both the guard ring metal and the alloying time of guard ring metal. The breakdown characteristics of MGR-type SiC-SBDs are essentially improved as the alloying time of guard ring metal is increased. The SiC-SBD without MGR shows less than 200 V breakdown voltage, while the SiC-SBD with Al MGR shows approximately 700 V breakdown voltage. The improvement in breakdown characteristics is attributed to the field edge termination effect by the MGR, which is similar to an implanted guard ring-type SiC-SBD. There are two breakdown origins in the MGR-type SiC-SBD. One is due to a crystal defects, such as micropipes and stacking faults, in the Epi-layers and the SiC substrate, and occurs at a lower electric field. The other is due to the destruction of guard ring metal, which occurs at a higher electric field. The demolition of guard ring metal is due to the electric field concentration at an edge of Schottky contact metal.