• 제목/요약/키워드: Electric resistor

검색결과 111건 처리시간 0.028초

펄스 전기장 방식을 위한 전류원 기반의 고전압 펄스 발생 회로 (High voltage pulse circuit based on current source for Pulsed Electric Field method)

  • 오현준;강윤수;황훈하;노정욱
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2020년도 전력전자학술대회
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    • pp.230-232
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    • 2020
  • 식품을 보다 신선하고 오래 보관하기 위하여 처리 및 보존에 관한 여러 방법들이 연구되고 있다. 특히 열에 민감한 유제품 또는 액체 식품들에 대하여 열을 가하지 않는 비열처리 방식의 기술들이 연구되고 있다. 그 중 식품 내 미생물의 활성화와 고유한 속성의 변화를 최소화하는 방법으로 Pulsed Electric Field 방식에 대한 연구가 활발히 진행되고 있다. 하지만 해당방식은 기존의 열처리 방식에 비해 경제적인 면에서 단점을 가지고 있다. 이에 본 논문에서는 기존 Pulsed Electric Filed 방식의 효율을 높이고 비용을 저감할 수 있는 회로를 제안한다. 전압제어 방식의 DC/DC Power stage 부를 전류제어 방식으로 바꾸어 기존 회로의 Charging resistor를 사용하지 않음으로써 전력손실을 줄이고 비용 및 전기요금을 줄이고자 하였다. 본 논문에서는 시뮬레이션을 통해 제안회로를 검증하였다.

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15 kVA급 저항형 초전도 한류기의 전류제한특성 (Characteristics of 15 kVA superconducting fault current limiter)

  • Choi, Hyo-Sang;Kim, Hye-Rim;Hwang, Si-Dole;Kim, Sang-Joon;Lim, Hae-Ryong;Kim, In-Seon;Hyun, Ok-Bae
    • 한국초전도학회:학술대회논문집
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    • 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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    • pp.272-275
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    • 2000
  • We investigated a resistive superconducting fault current limiter (SFCL) fabricated using YBCO thin films on 2-inch diameter sapphire substrates. Nearly identical SFCL units were prepared and tested. The units were connected in series and parallel to increase the current and voltage ratings. A serial connection of the units showed significantly unbalanced power dissipation between the units. This imbalance was removed by introducing a shunt resistor to the firstly quenched unit. Parallel connection of the units increased the current rating. An SFCL module of 4 units in parallel, each of which has minimum quench current 25 Ap, was produced and successfully tested at a 220 V circuit. From the resistance increase, we estimated that the film temperature increases to 200 K in 5 msec, and 300 K in 120 msec. Successive quenches revealed that this system is stable without degradation in the current limiting capability under such thermal shocks as quenches at 220 V.

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154 ㎸ SC Neutral Resistor 절연이 콘덴서 뱅크에 미치는 영향 (A Study on Effect of Neutral Resistance Deterioration to 154㎸ Power Capacitances)

  • 전상동;김기일;정규원;유희영;이봉희
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2008년도 제39회 하계학술대회
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    • pp.345-346
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    • 2008
  • 최근에 콘덴서 뱅크에서 자주 일어나는 고장의 유형은 콘덴서의 내부절연파괴, 리액터의 소손이 주를 이루고 있다. 그중에서 콘덴서 셀의 절연파괴가 수대에서 십 수대까지 동시에 발생하기도 한다. 이러한 현상의 대부분은 차단기의 투입 시 서지전압과 전류에 의해 서서히 진행 혹은 갑작스런 고장으로 진행되고 있다. 이중에서 저항기의 절연열화가 진행되면 차단기 투입 시 순간적인 절연파괴를 일으켜 급준파의 전류를 더 급준하게 만들면서 콘덴서나 리액터의 열화를 더욱 더 가중시키며 순간적으로 저항기의 역할을 못하게 되어 안정상태를 더욱 해치는 역할을 수행하게 된다. 이 논문에서는 콘덴서 뱅크와 중성점 저항기의 특성을 분석하고 중성점 저항기의 절연성능을 보강하여 전, 후의 서지전류 특성을 비교함으로써 실제 계통에서 중성점 저항기의 절연열화가 콘덴서 뱅크에 미치는 영향에 대해서 알아보고자 한다.

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저항을 이용한 프로판-공기 혼합가스의 점화한계 개선에 관한 연구 (A Study on the Improved Ignition Limit with Resistor for Propan-air Mixture Gas)

  • 이춘하;오종용;옥경재;지승욱;이광식;심광렬
    • 한국화재소방학회논문지
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    • 제18권1호
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    • pp.18-23
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    • 2004
  • 본 논문은 IEC형 불꽃점화 시험장치를 이용하여 저압 유도회로의 최소 점화한계를 프로판-공기 5.25 Vol.%의 혼합 가스에 대하여 실험적으로 구하였으며, 또한 유도회로의 인덕턴스 L에 안전소자로서 저항을 병렬접속 하였을 경우 프로판-공기 5.25 Vol.%의 혼합 가스에 대한 점화한계 개선효과를 고찰하였다. 그 결과, 최소 점화한계는 전류의 크기에 따라 좌우되었다. 또한, 전원으로부터 공급되는 에너지는 인덕턴스에 우선 축적되고, 그 초과분의 에너지가 폭발성 가스의 점화원으로 작용하였다. 점화한계 개선효과는 인덕턴스가 300mH일 때, 최고 330%의 개선효과가 나타났으며 인덕턴스가 클수록 점화한계 개선효과가 크게 나타났다. 또한 병렬로 접속한 저항의 크기가 적을수록 점화한계 개선 효과가 크다. 본 연구결과는 본질안전 방폭형 전기기기의 연구개발을 위한 기본자료로 활용할 수 있을 뿐만 아니라 이들 기기의 방폭 성능에 대한 시험자료로도 활용이 가능할 것으로 사료된다.

수퍼 커패시터의 고장진단을 위한 파라미터의 측정기법과 순시전압강하 보상장치에의 응용사례 (Parameter Measurement Method for Super Capacitor Failure Diagnosis and Application of Voltage Sag Compensation System Using Super Capacitor)

  • 손진근
    • 한국ITS학회 논문지
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    • 제8권6호
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    • pp.173-179
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    • 2009
  • 본 논문에서는 순시전압강하 보상장치 등의 전력변환시스템에 사용되는 수퍼 커패시터(또는 전기이중층콘덴서; EDLC)의 고장진단을 위한 파라미터의 측정기법에 관한 연구를 수행하였다. 직류 에너지의 저장을 위한 기존의 장치에는 납축전지 또는 전해 커패시터를 사용하여 왔으나 환경문제 및 에너지밀도의 측면에서 불리하여 최근에는 수퍼 커패시터의 사용이 주목을 받고 있다. 따라서 본 논문에서는 이러한 수퍼 커패시터의 내부 특성 및 고장 마모 등을 분석하기 위한 커패시터의 등가직렬저항(ESR) 및 정전용량을 측정하는 기법을 제시하여 고장진단의 주요한 데이터에 활용이 가능토록 하였으며, 또한 수퍼 커패시터를 적용한 순간전압강하에 대한 응용 실험을 수행하여 그 결과를 함께 제시하였다.

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A Shared Channel Design for the Power and Signal Transfers of Electric-field Coupled Power Transfer Systems

  • Su, Yu-Gang;Zhou, Wei;Hu, Aiguo Patrick;Tang, Chun-Sen;Hua, Rong
    • Journal of Power Electronics
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    • 제16권2호
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    • pp.805-814
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    • 2016
  • Electric-field coupled power transfer (ECPT) systems have been proposed as an alternative wireless power transfer (WPT) technology in recent years. With the use of capacitive plates as a coupling structure, ECPT systems have many advantages such as design flexibility, reduced volume of the coupling structure and metal penetration ability. In addition, wireless communications are effective solutions to improve the safety and controllability of ECPT systems. This paper proposes a power and signal shared channel for electric-field coupled power transfer systems. The shared channel includes two similar electrical circuits with a band pass filter and a signal detection resistor in each. This is designed based on the traditional current-fed push-pull topology. An analysis of the mutual interference between the power and signal transmission, the channel power and signal attenuations, and the dynamic characteristic of the signal channel are conducted to determine the values for the electrical components of the proposed shared channel. Experimental results show that the designed channel can transfer over 100W of output power and data with a data rate from 300bps to 120 kbps.

Design of a Metamaterial Absorber for ISM Applications

  • Tak, Jinpil;Lee, Youngki;Choi, Jaehoon
    • Journal of electromagnetic engineering and science
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    • 제13권1호
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    • pp.1-7
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    • 2013
  • This paper proposes a metamaterial (MTM) absorber for 2.45 GHz band applications. The unit cell of the proposed absorber consists of an electric LC (ELC) resonator and a strip line, which are printed on opposite sides of the substrate. The ELC resonator comprises two split ring resonators (SRRs) and a connecting line with a resistor. The designed absorber exhibits an absorption of 94 % and a half-max bandwidth of 0.16 GHz at 2.45 GHz.

Study on EMTP Simulation Applying Dual Reactor for Prevention of the Ferro-resonance and VT Burnout in Substation System

  • Kim, Seok-kon;An, Yong-ho;Jang, Byung-tae;Choi, Jong-kee;Lee, Nam-ho;Han, Jung-yeol;Lee, You-jin
    • KEPCO Journal on Electric Power and Energy
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    • 제1권1호
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    • pp.1-8
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    • 2015
  • When the line and switchgear of the substation system are disconnected, ferro-resonance can occur. This happens even if the capacitive reactance and inductive reactance are not equal, which are not common resonance conditions. Resonance conditions vary depending on the busbar configuration environment. Although the damping resistance method applying the existing saturable reactor to cope with ferro-resonance has been successfully applied on site, there can be loss of normal function during long-term operation. The reason is because the rise in the operating frequency of saturable reactors means the saturation number is increased. Therefore, it can no longer function as saturable reactor since the resistor having inadequate capacity is burned out. To address this problem, in this paper, an EMTP-based simulation test was performed by designing and applying a dual reactor method, which adds an extended divergence reactor to the 1st side of the VT. The test result confirms that when the divergence reactor is inserted, the voltage and current values obtained at the 1st side and 2nd side of the VT as well as current values of divergence reactor part were stabilized from the transient phenomena and return to normal values. When compared with existing measures, although this method is similar in adding having a reactor added to a system regarding ferro-resonance, it has the advantage of being able to prevent ferro-resonance in advance since the reactor is added before the system is saturated. In addition, because it does not use damping resistance, it can extend the equipment life and stabilize its operation. Therefore, there are a lot of differences in terms of its operating characteristics and achivement of goal between the conventional method and new divergence reactor method.

유도형과 저항형 초전도한류기의 파라메타를 고려한 전력계통도입효과의 분석 및 고찰 (On the Current Limiting Characteristics and Parameters of Superconducting Fault Current Limiter Introduced to 345kV Electric Power System due to Resistive-Type, Reactive-Type)

  • 홍원표;김용학;전영환;이승학
    • 한국초전도저온공학회:학술대회논문집
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    • 한국초전도저온공학회 2002년도 학술대회 논문집
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    • pp.285-290
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    • 2002
  • Power systems are becoming larger and larger for meeting electric power demand. Therefore, the over-currents resulting from contingencies such short circuits are increasing higher. The Maximum short circuit current of modern power system is becoming so large that circuit breaker are not expected th be able to shut down the current in the future. In order to cut over-currents, a system composed of a superconducting fault current limiter(SFCL) and traditional breaker seems to provide a promising solution for future power operation. In present paper, three line-to-ground fault is assumed to happen at the center of 345kV transmission lines in a large capacity electric power system The superconducting fault current limiter was represented using a commutation type, which consists of a non-inductive superconducting coil and current limiting element(resistor or reactor). The introduction merits of the SFCL were investigated quantitatively by RTDS/EMTDC from the viewpoint of current limiting performance, the prevention of the voltage drop at the load bus and comparison characteristics for two type SFCL. Desired design specification and operation parameters of SFCL were also given qualitatively by the performance evaluation of the two type SFCL in the power system.

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A Simple Analytical Model for the Study of Optical Bistability Using Multiple Quantum Well p-i-n Diode Structure

  • Jit, S.;Pal, B.B.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제4권1호
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    • pp.63-73
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    • 2004
  • A simple analytical model has been presented for the study of the optical bistability using a $GaAs-Al_{0.32}Ga_{0.68}As$ multiple quantum well (MQW) p-i-n diode structure. The calculation of the optical absorption is based on a semi-emperical model which is accurately valid for a range of wells between 5 and 20 nm and the electric field F< 200kV/cm . The electric field dependent analytical expression for the responsivity is presented. An attempt has been made to derive the analytical relationship between the incident optical power ( $(P_{in})$ ) and the voltage V across the device when the diode is reverse biased by a power supply in series with a load resistor. The relationship between $P_{in}$ and $P_{out}$ (i.e. transmitted optical power) is also presented. Numerical results are presented for a typical case of well size $L_Z=10.5nm,\;barrier\;size\;L_B=9.5nm$ optical wave length l = 851.7nm and electric field F? 100kV/cm. It has been shown that for the values of $P_{in}$ within certain range, the device changes its state in such a way that corresponding to every value of $P_{in}$ , two stable states and one unstable state of V as well as of $P_{out}$ are obtained which shows the optically controlled bistable nature of the device.