• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.9
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• pp.3615-3620
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• 2010

This study is development of UV-cured coating compounds which has more improved anti-stain and anti-biosis, about surface prevention of PVC Tile. We added water-soluble anti-static and anti-microbial agent to the resin. The process has prevented electrostatic and bacterial contagious disease. The result, which added 15wt% of water-soluble anti-static and 1wt% anti-microbial agent and coated with No.12 Bar-coater, coating composition had optimum surface property. It appear electric resistance($10^9{\Omega}/cm^2$), anti-stain (Ink Test, Dust Test), anti-biosis (99.99%), and adhesive power(100%).

• Korean Chemical Engineering Research
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• v.43 no.3
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• pp.425-431
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• 2005

New type of supercapacitor using high surface area activated carbons mixed with high conductivity polypyrrole (Ppy) has been prepared in order to achieve low impedance and high energy density. Mixed carbons of BP-20 and MSP-20 were used as the active electrode material, and polypyrrole doped with 2-naphthalenesulfonic acid (2-NSA) and carbon black (Super P) as conducting agents were added to activated carbons in order to enhance good electric conductivity. Electrodes prepared with the activated electrode materials and the conducting agents were added to a solution of organic binder [P(VdF-co-HFP) / NMP]. The ratio of optimum electrode composition was 78 : 17 : 5 wt.％ of (MSP20 : BP-20=1 : 1), (Super P : Ppy=10 : 7) and P(VdF-co-HFP) respectively. The performance of unit cell with addition of 7 wt％ Ppy have shown specific capacitance of 28.02 F/g, DC-ESR of $1.34{\Omega}$, AC-ESR of $0.36{\Omega}$, specific energy of 19.87 Wh/kg and specific power of 9.77 kW/kg. With addition of Ppy, quick charge-discharge of unit cell was possible because of low ESR, low charge transfer resistance and quick reaction rate. And good stability up to 500 chargedischarge cycles were retained about 80％ of their original capacity. It was concluded that the specific capacitance originated highly from compound phenomena of the pseudocapacitance by oxidation-reduction of polypyrrole and the nonfaradaic capacitance by adsorption-desorption of activated carbons.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.226-229
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• 2005

In this study, a step-down piezoelectric transformer was fabricated to utilize as an adapter for charging batteries of mobile electronic appliances. The ceramic part of the transformer is $Pb[(Mn_{1/3}Sb_{2/3})_{0.05}Zr_{0.475}Ti_{0.475}]O_3$ with mechanical quality factor of 1600, electromechanical coupling coefficient 59 %, and piezoelectric constant d33 1300, which can be utilized as a piezoelectric transformer. A simply fabricated disk-typed test pattern of diameter 28 mm and thickness 2 mm was used to characterize resonant frequency, Qm, kp according to the different input/output electrode area. efficiency and power as a function of load resistance was also investigated. The sample APT showed some spurious mode and BPT showed better frequency property. Taking all properties which are admittance, effective electromechanical coupling coefficient and mechanical quality factor most suitable for piezoelectric transformer is BPT which has 12 mm diameter electrode and the condition of 15 Vrms, 30 $\Omega$ made the maximum efficiency of 93.7 % and maximum power is 6W with 50 Vrms.

• Progress in Superconductivity and Cryogenics
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• v.10 no.1
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• pp.10-14
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• 2008

Differently from BSCCO tapes which are fabricated by powder-in-tube method, the coated conductors are made by the evaporation of YBCO on metal substrate. Due to this structural merit, although the coated conductors are generally used for large current transportation, they are expected to be favorable to the purpose of the fault current limitation as well. In this study, using YBCO coated conductor having copper stabilizer formed by plating technique(produced by Superpower Co.), we investigated the over-current characteristics of the coated conductor. The coated conductors had 85 A $I_c$ and 90 K $T_c$. The resistance of the conductor was 0.93 $m{\Omega}/cm$ at 300 K and 0.17 $m{\Omega}/cm$ at the temperature right above $T_c$. To the coated conductors, we applied the voltages of the range from 150 $V_{rms}$ to 230 $V_{rms}$ and measured the V-I curves using four probe method. From the results, we could analyze the electric behavior of the coated conductor in flux flow state. As the current exceed $I_c$, the currents were distributed into the superconductor and metal stabilizer. The amounts of the currents shared through both current paths were calculated under the assumption that the ,Joule heating was perfectly eliminated by $LN_2$ surrounding the conductor. Finally, the condition for the stable current flowing state which does not affect the conductor was established from the analysis on the over-current characteristics.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.11a
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• pp.179-180
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• 2012

Aluminum alloys are widely known as non-ferrous metal with light weight and high strength. Consequently, these materials take center stage in the aircraft and automobile industry. The Al7075 aluminum alloy is based on the Al-Zn-Mg-Cu and one of the strongest wrought aluminum alloys. Aluminum nitride has ten times higher thermal conductivity($319W/m{\cdot}K$) than Al2O3 and also has outstanding electric insulation($1{\times}1014{\Omega}{\cdot}cm$). Furthermore, it has high mechanical property (430 MPa) even though its co-efficient of thermal expansion is less than alumina For these reasons, it has great possibilities to be used for not only the field which needs high strength lightweight but also electronic material field because of its suitability to be applied to the insulator film of PCB or wafer of ceramic with high heat conduction. This paper investigates the mechanical properties and corrosion behavior of aluminum alloy Al7075 deposited with aluminum nitride thin films To improve the surface properties of Al7075 with respect to hardness, and resistance to corrosion, aluminum nitride thin films have been deposited by pulsed DC reactive magnetron sputtering. The pulsed DC power provides arc-free deposition of insulating films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.12
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• pp.1099-1105
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• 2006

In this paper, the equivalent circuit model of a Rosen-type multilayer piezoelectric transformer(MPT) has been proposed based on the Mason's equivalent circuit model and the principle of single layer piezoelectric plate. From the piezoelectric direct and converse effects, the symbolic expressions between the electric inputs and outputs of the MPT have been derived from the equivalent circuit model. A simplified equivalent circuit model of the MPT whose driving part has a single input form has been proposed. The symbolic expressions of the driving part have been derived from the simplified equivalent circuit model and the model was compared with the multi-input equivalent circuit model through the simulation. In the comparisons between the simulation results and the experimental data, output voltage is 630 Vp-p in case of 11-layered MPT and 670 Vp-p for 13-layered MPT over the experiment range. As the load resistance increases, output voltage increases and saturates over $300k{\Omega}$ and the resonant frequency changes from 102 kHz to 103 kHz. The simulation and the experimental results agree well over different load resistances and frequencies.

• Journal of Sensor Science and Technology
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• v.15 no.1
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• pp.53-57
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• 2006

This paper describes a novel processing technique for fabrication of polymer-derived SiCN (silicone carbonitride) microstructures for super-temperature MEMS applications. PDMS (polydimethylsiloxane) mold is fabricated on SU-8 photoresist using standard UV photolithographic process. Liquid precursor is injected into the PDMS mold. Finally, solid polymer structure is cross-linked using HIP (hot isostatic pressure) at $400^{\circ}C$, 205 bar. Optimum pyrolysis and annealing conditions are determined to form a ceramic microstructure capable of withstanding over $1400^{\circ}C$. The fabricated SiCN ceramic microstructure has excellent characteristics, such as shear strength (15.2 N), insulation resistance ($2.163{\times}10^{14}{\Omega}$) and BDV (min. 1.2 kV) under optimum process condition. These fabricated SiCN ceramic microstructures have greater electric and physical characteristics than bulk Si wafer. The fabricated SiCN microstructures would be applied for supertemperature MEMS applications such as heat exchanger and combustion chamber.

• Transactions of the Korean hydrogen and new energy society
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• v.20 no.2
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• pp.116-124
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• 2009

We investigated the influences of cobalt coating deposited by DC electroplating on the ferritic stainless steel, STS 430, as a protective layer on a metallic interconnect for SOFC applications. Cobalt coated STS 430 revealed a uniform and denser-packing oxide surface and a reduced growth rate of $Cr_2O_3$ scales after oxidation at $800^{\circ}C$in air. Cobalt coating layer was oxidized to $CoCo_2O_4$ and Co containing mixed oxide spinels such as $Co_2CrO_4$, $CoCr_2O_4$, and $CoCrFeO_4$. The area specific resistance value of Co coated sample was $0.020\;{\Omega}cm^2$ lower than that of uncoated at $800^{\circ}C$ in air during 500 h. After 1000 h oxidation, cobalt oxide coating layer suppressed chromium outward diffusion.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.11
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• pp.785-789
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• 2013

Silicon Carbide (SiC) is the material with the wide band-gap (3.26 eV), high critical electric field (~2.3 MV/cm), and high bulk electron mobility (~900 $cm^2/Vs$). These electronic properties allow attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation compared to Si devices. In general, device design has a significant effect on the switching and electrical characteristics. It is known that in this paper, we demonstrated that the switching performance and breakdown voltage of IGBT is dependent with doping concentration of p-base region and drift layer by using 2-D simulations. As a result, electrical characteristics of SiC-IGBT deivce is higher breakdown voltage ($V_B$= 1,600 V), lower on-resistance ($R_{on}$= 0.43 $m{\Omega}{\cdot}cm^2$) than Si-IGBT. Also, we determined that processing time and cost is reduced by the depth of n-drift region of IGBT was reduced.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.487-487
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• 2011

Recently graphene has emerged as a fascinating 2D system in condensed-matter physics as well as a new material for the development of nanotechnology. The unusual electronic band structure of graphene allows it to exhibit a strong ambipolar electric field effect with high mobility. These properties lead to the possibility of its application in high-performance transparent conducting films (TCFs). Compared to indium tin oxide (ITO) electrodes, which have a typical sheet resistance of ${\sim}60{\Omega}$/sq and ~85 % transmittance in the visible range (400?900 nm), the CVD-grown graphene electrodes have a higher/flatter transmittance in the visible to IR region and are more robust under bending. Nevertheless, the lowest sheet resistance of the currently available CVD graphene electrodes is higher than that of ITO. Here, we report an ingenious strategy, irradiation of MeV electron beam (e-beam) at room temperature under ambient condition, for obtaining size-homogeneous gold nanoparticle decorated on graphene. The nano-particlization promoted by MeV e-beam irradiation was investigated by transmission electron microscopy, electron energy loss spectroscopy elemental mapping, and energy dispersive X-ray spectroscopy. These results clearly revealed that gold nanoparticle with 10 ~ 15 nm in mean size were decorated along the surface of the graphene after 1.5 MeV-e-beam irradiation. A chemical transformation and charge transfer for the metal gold nanoparticle were systematically explored by X-ray photoelectron spectroscopy and Raman spectroscopy. This approach advances the numerous applications of graphene films as transparent conducting electrodes.