• Transactions on Electrical and Electronic Materials
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• 제6권6호
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• pp.245-248
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• 2005

The physical and electrical properties of polycrystalline $\beta$-SiC were studied according to different nitrogen doping concentration. Nitrogen-doped SiC films were deposited by LPCVD(1ow pressure chemical vapor deposition) at $900^{\circ}C$ and 2 torr using $100\%\;H_2SiCl_2$ (35 sccm) and $5 \%\;C_2H_2$ in $H_2$(180 sccm) as the Si and C precursors, and $1\%\;NH_3$ in $H_2$(20-100 sccm) as the dopant source gas. The resistivity of SiC films decreased from $1.466{\Omega}{\cdot}cm$ with $NH_3$ of 20 sccm to $0.0358{\Omega}{\cdot}cm$ with 100 sccm. The surface roughness and crystalline structure of $\beta$-SiC did not depend upon the dopant concentration. The average surface roughness for each sample 19-21 nm and the average surface grain size is 165 nm. The peaks of SiC(111), SiC(220), SiC(311) and SiC(222) appeared in polycrystalline $\beta$-SiC films deposited on $Si/SiO_2$ substrate in XRD(X-ray diffraction) analysis. Resistance of nitrogen-doped SiC films decreased with increasing temperature. The variation of resistance ratio is much bigger in low doping, but the linearity of temperature dependent resistance variation is better in high doping. In case of SiC films deposited with 20 sccm and 100 sccm of $1\%\;NH_3$, the average of TCR(temperature coefficient of resistance) is -3456.1 ppm/$^{\circ}C$ and -1171.5 ppm/$^{\circ}C$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.228-229
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• 2009

$VO_2$ thermistor was fabricated on $Al_2O_3$ substrate. and has a CTR (Critical Temperature Resistor) characteristic. $VO_2$ thermistor has a about $10^6$ resistance($\Omega$) in normal temperature. But When temperature is a about $80^{\circ}C$, Resistance of $VO_2$ thermistor is a about some hundred resistance: The resistance of $VO_2$ thermistor increased with increasing length and decreasing width.

• 한국염색가공학회지
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• 제23권3호
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• pp.219-226
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• 2011

Recently, study of functional clothing for vital sensing is focused on improving conductivity and decreasing resistance, in order to enhance the electrocardiogram(ECG) sensing accuracy and obtained stable environmental durability on operation condition. In this study, four ECG fabrics that having different componnt yarns and weaving structures were produced to analyze their environmental durabilities and electric properties under general operation conditions including different physical and chemical stimulation. For outstanding electric properties and physical properties, the optimized ECG sensing fabric should consist of a fabric of 2 up 3 down twill structure containing 210de silver-coated conductive yarns and polyester yarn in warp and weft directions respectively. The selected fabric has $0.11{\Omega}$ which is relative lower resistance than otherwisely produced fabrics under ECG measurement condition. And it has 7% stable resistance changes under 25% strain and repeated strain.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권5호
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• pp.259-264
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• 2000

In this paper, the characteristics of piezoelectric transformer is studied for driving CCFL(Cold Cathode Fluorescent Lamp). In order to investigate the effects of geometrical dimensions, λvibration-mode type piezoelectric transformers with different sizes in the length(l), width$(\omega)$ and thickness(t) are made of ceramics with PZT-PMWS compositions. The increases in temperature and aging effect are also measured in the transformer of PT-3 sample under the condition of operation continuously for 10 hrs. As the results of dimensional effects, the output power and voltage step-up ratio are largely affected by the ratio of length to thickness(l/t) rather than that of length to $width(l/\omega)$. The output power and step-up ratio are increased with increasing l/t. On case of PT-3, the output voltages are 510[Vrms] at 36[Vrms] in input voltage, $100[k\Omega]$ in load resistance. Temperature increases and variation of output voltages are $10[^{\circ}C]$ and less than 5[%], respectively.

• 한국환경과학회지
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• 제7권1호
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• pp.36-40
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• 1998

This study was carried out to investigate the collection Efficiency of mass in collector step at the different of physical gas characterization. This work has focused on the dependence of the collection efficiency of mass in the collector zone of a two-stage set up field with gas temperature T and the dew point tmeperature. To identify the dependence of the mass collection efficiency on the Bounded plate of the collector zone MP.k by the spectre electric resistance of dust $p_e$. and the relative humidify ${\varphi}$, 20 at- tempts have been made with three different gas temperature ($50{\circ}C, 80{\circ}C, 110{\circ}C$) at different dew point. At the specific electric resistance of dust $p_e$=$10^6{\Omega}m$ which relative humidity corresponds to $\phi$ > 15%, a easy rise of the sounded plate secluded dust mass share was measured atwain. As the result of the higher cohesion imprisonment power due to the adsorbtion of particle, the rinse of the relative humidity developed on the particle surface. Therefore, the collection efficiency of mass was not predominant the high temperature T in the collector zone, neither was the pecific ellectric resistance of dust dependent.

• Carbon letters
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• 제21권
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• pp.68-73
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• 2017

We have demonstrated the production of thin films containing multilayer graphene-coated copper nanoparticles (MGCNs) by a commercial electrodeposition method. The MGCNs were produced by electrical wire explosion, an easily applied technique for creating hybrid metal nanoparticles. The nanoparticles had average diameters of 10-120 nm and quasi-spherical morphologies. We made a complex-electrodeposited copper thin film (CETF) with a thickness of $4.8{\mu}m$ by adding 300 ppm MGCNs to the electrolyte solution and performing electrodeposition. We measured the electric properties and performed corrosion testing of the CETF. Raman spectroscopy was used to measure the bonding characteristics and estimate the number of layers in the graphene films. The resistivity of the bare-electrodeposited copper thin film (BETF) was $2.092{\times}10^{-6}{\Omega}{\cdot}cm$, and the resistivity of the CETF after the addition of 300 ppm MGCNs was decreased by 2% to ${\sim}2.049{\times}10^{-6}{\Omega}{\cdot}cm$. The corrosion resistance of the BETF was $9.306{\Omega}$, while that of the CETF was increased to 20.04 Ω. Therefore, the CETF with MGCNs can be used in interconnection circuits for printed circuit boards or semiconductor devices on the basis of its low resistivity and high corrosion resistance.

• Progress in Superconductivity
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• 제10권1호
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• pp.45-49
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• 2008

For the development of superconducting fault current limiters (SFCLs), fault current limiting elements were fabricated out of Bi-2212 bulk tubes and tested. The SFCL elements consisted of tube shaped Bi-2212 bulks and metal shunts for the stabilizers. Firstly, the Bi-2212 bulk tubes were processed based on a design of monofilar coils in order to acquire large resistance and high voltage rating. 300 mm-long Bi-2212 tubes were designed to have the current path of 410 cm in length with 24 turns and 41 mm in diameter. The processed monofilar coil, as designed, had 300 A $I_c$ at 77 K. The fabricated superconducting monofilar coils were affixed to Cu-Ni alloy as that of stabilizers. The Cu-Ni alloys were processed to have the same shape of the superconducting monofilar coils. The Cu-Ni coil had resistivity of 32 ${\mu}{\Omega}$-cm at 77 K and 37 ${\mu}{\Omega}$-cm at 300 K. The metal shunts were attached to the outside of the Bi-2212 monofilar coil by a soldering technique. After the terminals made of copper were attached to both ends of the superconductor-metal shunt composite, the gap between the turns and the surface of the elements was filled with an epoxy and a dense mesh made of FRP in order to enhance the mechanical strength. The completed SFCL elements went through fault tests, and we confirmed that the voltage rating of 143 $V_{rms}$ (E =0.35 $V_{rms}$/cm) could be accomplished.

• ETRI Journal
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• 제34권1호
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• pp.134-137
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• 2012

Power metal-oxide semiconductor field-effect transistor (MOSFET) devices are widely used in power electronics applications, such as brushless direct current motors and power modules. For a conventional power MOSFET device such as trench double-diffused MOSFET (TDMOS), there is a tradeoff relationship between specific on-state resistance and breakdown voltage. To overcome the tradeoff relationship, a super-junction (SJ) trench MOSFET (TMOSFET) structure is studied and designed in this letter. The processing conditions are proposed, and studies on the unit cell are performed for optimal design. The structure modeling and the characteristic analyses for doping density, potential distribution, electric field, width, and depth of trench in an SJ TMOSFET are performed and simulated by using of the SILVACO TCAD 2D device simulator, Atlas. As a result, the specific on-state resistance of 1.2 $m{\Omega}-cm^2$ at the class of 100 V and 100 A is successfully optimized in the SJ TMOSFET, which has the better performance than TDMOS in design parameters.

• 한국전기전자재료학회논문지
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• 제31권4호
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• pp.261-266
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• 2018

When the clamp meter approaches the electric path where current is flowing, leakage current can be measured at a distance from the electric current because the induced current increases as the magnitude of the current increases and approaches nearer to the electric path. Therefore, measurements were carried out from a distance to avoid this effect. In addition, the measured values differ depending on the location of the power line that penetrates the ZCT of the clamp meter, thus measurements were performed at a location where this effect was minimized. The fraction of compliant branch circuits, whose leakage current was lower than 1.00 mA, was found to be 69.0% out of the total of 439 branch circuits, while the percentage of compliant branch circuits having an insulation resistance higher than $0.20M{\Omega}$ was found to be 93.2%. The reason why the percentage of compliant branch circuits with low leakage current was low might be due to the inclusion of capacitive leakage current in the total measured leakage current.

• 한국전기전자재료학회논문지
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• 제29권6호
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• pp.365-369
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• 2016

In this paper, we fabricated Cu/Mn alloy shunt resistor with low resistance and thermal stability for use of mobile electronic devices. We designed metal alloy composed of copper (Cu) and manganese (Mn) to embody in low resistance and low TCR which are conflict each other. Cu allows high electrical conductivity and Mn serves thermal stability in this Cu/Mn alloy system. We confirmed the elemental composition of the designed metal alloy system by using energy dispersive X-ray (EDX) analysis. We obtained low resistance below $10m{\Omega}$ and low temperature coefficient of resistance (TCR) below $100ppm/^{\circ}C$ from the designed Cu/Mn alloy resistor. And in order to minimize resistance change caused by alternative frequency on circuit, shape design of the metal alloy wire is performed by rolling process. Finally, we conclude that design of the metal alloy system was successfully done by alloying Cu and 3 wt% of Mn, and the Cu/Mn alloy resistor has low resistance and thermal stability.