• Journal of IKEEE
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• v.18 no.4
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• pp.447-455
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• 2014

In this research, n-based 4H-MOS Capacitor was fabricated with PECVD (plasma enhanced chemical vapor deposition) process for improving SiC/$SiO_2$ interface properties known as main problem of 4H-SiC MOSFET. To overcome the problems of dry oxidation process such as lower growth rate, high interface trap density and low critical electric field of $SiO_2$, PECVD and NO annealing processes are used to MOS Capacitor fabrication. After fabrication, MOS Capacitor's interface properties were measured and evaluated by hi-lo C-V measure, I-V measure and SIMS. As a result of comparing the interface properties with the dry oxidation case, improved interface and oxide properties such as 20% reduced flatband voltage shift, 25% reduced effective oxide charge density, increased oxide breakdown field of 8MV/cm and best effective barrier height of 1.57eV, 69.05% reduced interface trap density in the range of 0.375~0.495eV under the conduction band are observed.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.9
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• pp.1606-1611
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• 2008

Recently, The diagnosis techniques of electric facilities are developed on live line. This paper describes the discharge characteristics of polymer insulator(EPDM A type). Keeping the facilities in good working order, the goal of this paper will provide the information to enable user to easily judge conditions of facilities on the spot. The performance of polymer insulator is assessed from the KS C IEC 60270 and CEA LWIWG-01(96)(Tracking Wheel Test). As the results, UV generation patterns of polymer insulator grow like a jellyfish shape follow the ramping voltage. Discharging UVs are detected at about 31.25% of breakdown voltage. Just then, dimension of UV image is about $0.84cm^{2}$. The dimension of max. UV image is about $297.4cm^{2}$ at $160kV(V_{bd})$. The position of UV generation due to surface discharge of polymer insulator is the center of insulator in the early, then moved the ground side and the last, UV image moved through the junction part of source side. Surface of aged polymer insulator is cracked and faded due to arc. UV absorption spectrum of polymer insulator are appeared the C-H bond of scissoring vib. at $1014cm^{-1}$ and C=O bond of recombination structure. Also, recombined UV absorption peak such as C-H, N-H, and O-H is detected at the $3321cm^{-1}$. Through the paper, there are inspection data which are the relations between surface discharge of polymer insulator and UV detecting image.

• Fire Science and Engineering
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• v.30 no.4
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• pp.73-81
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• 2016

A self-regulating heating cable is an electrical heating element by flowing an electric current between parallel conductors filled with an extruded semi-conductive polymer. Self-regulating heating cables are used mainly for frost protection purposes because the construction is convenient and the price is low. On the other hand, structural problems with imperfections of the insulation can cause a fire despite their usefulness. This paper deduced a direct method to derive the cause by investigating the scene of a fire due to a self-regulating heating cable and analyzed the basic problem using fault tree analysis. In this paper, the actual fire scene was a cold storage warehouse, and fire investigation was conducted. After investigating the fire scene and fault tree analysis, the cause of the fire could be attributed to dielectric breakdown of the self-regulating heating cable. This paper could be utilized in the fire safety activities and similar fire investigations.

• Journal of Convergence for Information Technology
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• v.10 no.2
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• pp.1-8
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• 2020

The standardized procurement of supervisory cost for the construction of domestic Information and Communication Technology(ICT) facilities, which is announced by the Korea Engineering and Construction Association in May 2009, has been applied in the public institutions and private industries. However, the previous standardized procurement is not widely applied in recent years because the ICT and social economic environment have been rapidly changed and the previous equations to calculate the supervisory cost is not simplified. As results, the needs for a new standardized procurement has been increased and the Ministry of Industry, Commerce and Energy has published a notice with new standard procurement. In this paper, we provide the explanation of the background and the derivation process of the notice based on authors' experiences of project participation. As research method, we compare the previous mad-day cost of ICT construction and that of another area including electric facility construction, and then we explain a new procurement equation based on WBS(Work Breakdown Structure).

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.4
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• pp.495-502
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• 2014

Fast recovery diodes (FRDs) were developed using the $p^{{+}{+}}/n^-/n^{{+}{+}}$ epitaxial layers grown by low temperature epitaxy technology. We investigated the effect of electrostatic discharge (ESD) stresses on their electrical and switching properties using current-voltage (I-V) and reverse recovery time analyses. The FRDs presented a high breakdown voltage, >450 V, and a low reverse leakage current, < $10^{-9}$ A. From the temperature dependence of thermal activation energy, the reverse leakage current was dominated by thermal generation-recombination and diffusion, respectively, at low and high temperature regions. By virtue of the abrupt junction and the Pt drive-in for the controlling of carrier lifetime, the soft reverse recovery behavior could be obtained along with a well-controlled reverse recovery time of 21.12 ns. The FRDs exhibited excellent ESD robustness with negligible degradations in the I-V and the reverse recovery characteristics up to ${\pm}5.5$ kV of HBM and ${\pm}3.5$ kV of IEC61000-4-2 shocks. Likewise, transmission line pulse (TLP) analysis reveals that the FRDs can handle the maximum peak pulse current, $I_{pp,max}$, up to 30 A in the forward mode and down to - 24 A in the reverse mode. The robust ESD property can improve the long term reliability of various power applications such as automobile and switching mode power supply.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.131-131
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• 2008

Silicon carbide (SiC) has attracted significant attention for high frequency, high temperature and high power devices due to its superior properties such as the large band gap, high breakdown electric field, high saturation velocity and high thermal conductivity. We performed Al ion implantation processes on n-type 4H-SiC substrate using a SILVACO ATHENA numerical simulator. The ion implantation model used a Monte-Carlo method. We studied the effect of channeling by Al implantation simulation in both 0 off-axis and 8 off-axis n-type 4H-SiC substrate. We have investigated the Al distribution in 4H-SiC through the variation of the implantation energies and the corresponding ratio of the doses. The implantation energies controlled 40, 60, 80, 100 and 120 keV and the implantation doses varied from $2\times10^{14}$ to $1\times10^{15}cm^{-2}$. In the simulation results, the Al ion distribution was deeper as increasing implantation energy and the doping level increased as increasing implantation doses. After the post-implantation annealing, the electrical properties of Al-implanted p-n junction diode were investigated by SILV ACO ATLAS numerical simulator.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.5
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• pp.185-190
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• 2002

Capacitor material utilized in the downsizing passive devices and dynamic random access memory(DRAM) requires the physical and electrical properties at given area such as capacitor thickness reduction, relative dielectric constant increase, low leakage current and thermal stability. Common capacitor materials, $SiO_2$, $Si_3N_4$, $SiO_2$/$Si_3N_4$,TaN and et al., used until recently have reached their physical limits in their application to several hundred angstrom scale capacitor. $Ta_2O_{5}$ is known to be a good alternative to the existing materials for the capacitor application because of its high dielectric constant (25 ~35), low leakage current and high breakdown strength. Despite the numerous investigations of $Ta_2O_{5}$ material, there have little been established the clear understanding of the annealing effect on capacitance characteristic and conduction mechanism, design and fabrication for $Ta_2O_{5}$ film capacitor. This study presents the structure-property relationship of reactive-sputtered $Ta_2O_{5}$ MIM capacitor structure processed by annealing in a vacuum. X-ray diffraction patterns skewed the existence of amorphous phase in as-deposited condition and the formation of preferentially oriented-$Ta_2O_{5}$ in 670, $700^{\circ}C$ annealing. On 670, $700^{\circ}C$ annealing under the vacuum, the leakage current decrease and the enhanced temperature-capacitance characteristic stability. and the leakage current behavior is stable irrespective of applied electric field. The results states that keeping $Ta_2O_{5}$ annealed at vacuum gives rise to improvement of electrical characteristics in the capacitor by reducing oxygen-vacancy and the broken bond between Ta and O.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.469-472
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• 1999

CeO$_2$ thin films have used in wide applications such as SOI, buffer layer, antirflection coating, and gate dielectric layer. CeO$_2$takes one of the cubic system of fluorite structure and shows similar lattice constant (a=0.541nm) to silicon (a=0.543nm). We investigated CeO$_2$films as buffer layer material for nonvolatile memory device application of a single transistor. Aiming at the single transistor FRAM device with a gate region configuration of PZT/CeO$_2$ /P-Si , this paper focused on CeO$_2$-Si interface properties. CeO$_2$ films were grown on P-type Si(100) substrates by 13.56MHz RF magnetron sputtering system using a 2 inch Ce metal target. To characterize the CeO$_2$ films, we employed an XRD, AFM, C-V, and I-V for structural, surface morphological, and electrical property investigations, respectively. This paper demonstrates the best lattice mismatch as low as 0.2 % and average surface roughness down to 6.8 $\AA$. MIS structure of CeO$_2$ shows that breakdown electric field of 1.2 MV/cm, dielectric constant around 13.6 at growth temperature of 200 $^{\circ}C$, and interface state densities as low as 1.84$\times$10$^{11}$ cm $^{-1}$ eV$^{-1}$ . We probes the material properties of CeO$_2$ films for a buffer layer of FRAM applications.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.2
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• pp.357-361
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• 2011

The terminal current in voltage driven systems is an essential role for characterizing the pattern of electric discharge such as corona, breakdown, etc. Until now, to evaluate this terminal current, Sato's equation has been widely used in areas of high voltage and plasma discharge. Basically Sato's equation was derived by using the energy balance equation and its final form described physical meaning explicitly. To give more general abilities in Sato's equation, we present a generalized approach by directly using the Poynting's theorem incorporating the finite element method. When the magnetic field effect or the time-dependent voltage source is considered, this generalized energy method can be easily applicable to those problems with any dielectric media such as gas, fluid, and solid. As an alternative approach, the integral Ohm's law resulting in small numerical errors has an ability to be applied to multi-port systems. To test the generalized energy method and integral Ohm's law, first, the results from two prosed methods were compared to those from Sato's approach and an analytic solution in parallel plane electrodes. After verification, the generalized method was applied to the tip-sphere electrodes for evaluating the terminal current with three carriers and the Fowler-Nordheim field emission condition. From these results, we concluded that the generalized energy method can be a consistent technique for evaluating the discharge current with various dielectric materials or large magnetic field.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.13 no.4
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• pp.152-159
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• 1999

This paper describes the rmtion characteristics of a particle in GIS under AC voltage. To measure the motion characteristics of the particle, a model gas chamber and parallel plain electrodes were designed and manufactured lift-off voltages of wire and spherical particles on the electrode were calculated and rreasured, and electric charge was calculated. By using a high speed carrera, the rmtion characteristics of various particles with aw}ied voltages, such as motion pattern, lift-off time, lift-off height, were analyzed 1be lift-off voltages were greatly affected by diarreters of wire and spherical particles. At voltage around lift-off voltage, the stand-up particle in vertical state rmved up and down between electrodes and the height of the lift-off particle was low. At voltage around breakdown voltage, the particle repeated vertical rotation a few times while they were being lifted off, and then, they were floating between the electrodes.trodes.