• Title/Summary/Keyword: Effective refractive index

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Fabrication of Optically Encoded Images on Porous Silicon (다공성 실리콘을 이용한 암호화된 광학이미지 제작)

  • Koh, Young-Dae;Kim, Sung-Jin;Kim, Jong-Hyeon;Rheu, Seong-Ok;Bang, Hyeon-Seok;Jeong, Yun-Sik;Park, Bo-Kyeong;Sohn, Hong-Lae
    • Journal of the Korean Vacuum Society
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    • v.17 no.1
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    • pp.46-50
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    • 2008
  • Optical images on the porous silicon exhibiting Febry-Perot fringe pattern have been prepared by using an electrochemical etching of p-type silicon wafer (boron-doped,<100> orientation, resistivity $0.8{\sim}1.2m{\Omega}-cm$) and beam projector. The images remained in the substrate displayed an optical images correlating to the optical pattern and could be useful for optical data storage. A decrease in the effective optical thickness of the Febry-Perot layers was observed, indicative of a change in refractive index induced by exposing of porous silicon to the white light. This provides the ability to fabricate complex optical encoding in the surface of silicon.

Dielectric and Optical Properties of Amorphous Hafnium Indium Zinc Oxide Thin Films on Glass Substrates

  • Shin, Hye-Chung;Seo, Soon-Joo;Denny, Yus Rama;Lee, Kang-Il;Lee, Sun-Young;Oh, Suhk-Kun;Kang, Hee-Jae;Heo, Sung;Chung, Jae-Gwan;Lee, Jae-Cheol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.225-225
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    • 2011
  • The dielectric and optical properties of GaInZnO (GIZO), HfInZnO (HIZO) and InZnO (IZO) thin films on glass by RF magnetron sputtering method were investiged using reflection electron energy loss spectroscopy (REELS). The band gap was estimated from the onset values of REELS spectra. The band gaps of GIZO, HIZO and IZO thin films are 3.1 eV, 3.5 eV and 3.0 eV, respectively, Hf and Ga incorporated into IZO results in an increase in the energy band gap of IZO by 0.5 eV and 0.1 eV. The dielectric functions were determined by comparing the effective cross section determined from experimental REELS with a rigorous model calculation based on the dielectric response theory, using available software package, good agreement between the experimental and fitting results gives confidence in the accuracy of the determined dielectric function. The main peak of Energy Loss Function (ELF) obtained from IZO shows at 18.42 eV, which shifted to 19.43 eV and 18.15 eV for GIZO and HIZO respectively, because indicates the corporation of cation Ga and Hf in the composition. The optical properties represented by the dielectric function e, the refractive index n, the extinction coefficient k, and the transmission coefficient, T of HIZO and IZO thin films were determined from a quantitative analysis of REELS. The transmission coefficient was increased to 93% and decreased to 87% in the visible region with the incorporation of Hf and Ga in the IZO compound.

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Doping Controlled Emitter with a Transparent Conductor for Crystalline Si Solar Cells

  • Kim, Min-Geon;Kim, Hyeon-Yeop;Choe, U-Jin;Lee, Jun-Sin;Kim, Jun-Dong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.590-590
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    • 2012
  • A transparent conducting oxide (TCO) layer was applied in crystalline Si (c-Si) solar cells without use of the conventional SiNx-coating. A high quality indium-tin-oxide (ITO) layer was directly deposited on an emitter layer of a Si wafer. Three different types of emitters were formed by controlling the phosphorous diffusion condition. A light-doped emitter forming a thinner emitter junction showed an improved photoconversion efficiency of 14.1% comparing to 13.2% of a heavy-doped emitter. This was induced by lower recombination within a narrower depletion region of the light-doped emitter. In the aspect of light management, the intermediate refractive index of ITO is effective to reduce the light reflection leading the enhanced carrier generation in a Si absorber. For the electrical aspect, the ITO layer serves as an efficient electrical conductor and thus relieves the burden of high contact resistance of the light-doped emitter. Additionally, the ITO works as a buffer layer of Ag and Si and certainly prevents the shunting problem of Ag penetration into Si emitter region. It discusses an efficient design scheme of TCO-embedded emitter Si solar cells.

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Near Infrared Laser Based on Polymer Waveguide Bragg Grating (폴리머 광도파로 브래그 격자 기반의 근적외선 레이저)

  • Kim, Kyung-Jo;Son, Nam-Seon;Kim, Jun-Whee;Oh, Min-Cheol
    • Korean Journal of Optics and Photonics
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    • v.22 no.4
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    • pp.179-183
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    • 2011
  • An external cavity laser operating at near infrared wavelength is demonstrated by incorporating polymer waveguide Bragg reflectors. 3rd order Bragg grating and oversized rip waveguide structure were designed by using the effective index method and the transmission matrix method. The polymer waveguide was fabricated using polymer materials with refractive indices of 1.462 and 1.435 for the core and the cladding layers, respectively. The external feedback laser with 875-nm Bragg grating exhibits single mode lasing located at 850-nm wavelength with an output power of 0 dBm, a 20-dB bandwidth of 0.2 nm and a side mode suppression ratio of 40 dB.

Effectiveness of Beam-propagation-method Simulations for the Directional Coupling of Guided Modes Evaluated by Fabricating Silica Optical-waveguide Devices (광도파로 모드 간의 방향성 결합현상에 대한 빔 진행 기법 설계의 효율성 및 실리카 광도파로 소자 제작을 통한 평가)

  • Jin, Jinung;Chun, Kwon-Wook;Lee, Eun-Su;Oh, Min-Cheol
    • Korean Journal of Optics and Photonics
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    • v.33 no.4
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    • pp.137-145
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    • 2022
  • A directional coupler device, one of the fundamental components of photonic integrated circuits, distributes optical power by evanescent field coupling between two adjacent optical waveguides. In this paper, the design process for manufacturing a directional coupler device is reviewed, and the accuracy of the design results, as seen from the characteristics of the actual fabricated device, is confirmed. When designing a directional coupler device through a two-dimensional (2D) beam-propagation-method (BPM) simulation, an optical structure is converted to a two-dimensional planar structure through the effective index method. After fabricating the directional coupler device array, the characteristics are measured. To supplement the 2D-BPM results that are different from the experimental results, a 3D-BPM simulation is performed. Although 3D-BPM simulation requires more computational resources, the simulation result is closer to the experimental results. Furthermore, the waveguide core refractive index used in 3D-BPM is adjusted to produce a simulation result consistent with the experimental results. The proposed design procedure enables accurate design of directional coupler devices, predicting the experimental results based on 3D-BPM.

The Effects of Substrate Bias Voltage on the Formation of $(ZnS)_{1-x}-(SiO_2)_x$ Protective Films in Phase Change Optical Disk by R.F. Sputtering Method. (R.F. 스퍼터링법에 의한 상변화형 광디스크의 $(ZnS)_{1-x}-(SiO_2)_x$ 보호막 제조시 기판 바이어스전압의 영향)

  • Lee, Tae-Yun;Kim, Do-Hun
    • Korean Journal of Materials Research
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    • v.8 no.10
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    • pp.961-968
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    • 1998
  • In order to investigate the effects of substrate bias voltage on the formation of$ZnS-SiO_2$ protective film in phase change optical disk by R.F. magnetron sputtering method, thin dielectric film was formed on Si wafer and Corning glass by using ZnS(80mol%)-$SiO_2$(20mol%)t arget under argon gas. In this study, the Taguchi experimental method was applied in order to obtain optimum conditions with reduced number of experiments and to control numerous variables effectively. At the same time this method can assure the reproducibility of experiments. Optimum conditions for film formation obtained by above method were target RF power of 200 W. substrate RF power of 20 W, Ar pressure of 5 mTorr. sputtering time of 20 min.. respectively. The phase of specimen was determined by using XRD and TEM. The compositional analysis of specimen was performed by XPS test. In order to measure the thermal resistivity of deposited specimen, annealing test was carried out at $300^{\circ}C$ and $600^{\circ}C$. For the account of void fraction in thin film, the Bruggeman EMA(Effective Medium Approximation) method was applied using the optical data obtained by Spectroscopic Ellipsometry. According to the results of this work, the existence of strong interaction between bias voltage and sputtering time was confirmed for refractive index value. According to XRD and TEM analysis of specimen, the film structure formed in bias voltage resulted in more refined structures than that formed without bias voltage. But excess bias voltage resulted in grain growth in thin film. It was confirmed that the application of optimum bias voltage increased film density by reduction of void fraction of about 3.7%.

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Preparation of Fe4[Fe(CN)6]3 Coated on Mica or TiO2/Mica for Infrared Reflective Blue Pigments and Isolation-heat Properties of These Paints (Fe4[Fe(CN)6]3가 코팅된 Mica 또는 TiO2/Mica 적외선 반사용 청색안료 제조 및 이 도료의 차열 특성 평가)

  • Jung, Ha-Young;Kim, Dae Sung;Lee, Hyun-Jin;Lee, Seung-Ho;Lim, Hyung Mi;Choi, Byung-Ki;Kang, Kwang-Jung;Choi, Jin-Sub
    • Korean Journal of Materials Research
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    • v.23 no.12
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    • pp.672-679
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    • 2013
  • $Fe_4[Fe(CN)_6]_3$ coated on a mica or $TiO_2$/mica surface as infrared reflective blue pigment was prepared by a hydrothermal method. $Fe_4[Fe(CN)_6]_3$, used as coloring agent, was uniformly coated on mica or $TiO_2$/mica under the optimized condition of a 1.2 : 1 weight ratio between iron(III) chloride hexahydrate and potassium ferrocyanidetrihydrate at the initial pH level of 4.5 at $70^{\circ}C$. The infrared (IR)-reflective pigments were characterized by SEM, Zeta-potenial, FT-IR, and UV-VIS NIR spectrophotometry. Especially the CIE color coordinate and total solar reflectance(TSR) properties of the pigments were investigated in relation to variation of the coating and coated substrate thicknesses. Isolation-heat paint was prepared with 20 wt% blue pigments fully dispersed in acryl-urethane resin and several additives to coat the film uniformly. The films were also measured with CIE color coordinate, TSR, and the surface temperature was recorded by an isolation-heat measuring system. The pigments and films of $Fe_4[Fe(CN)_6]_3$ coated on mica and $TiO_2$/mica showed high TSR values compared with the TSR value of $Fe_4[Fe(CN)_6]_3$ itself. According to the increase of TSR value, the property of isolation-heat is effective. To realize the optimal blue color, we applied the the pigment to $TiO_2$ coated mica(TM(b)) which has blueish interference color. The pigment of $Fe_4[Fe(CN)_6]_3$ coated on TM(b) shows a strong blue color compared with that of $Fe_4[Fe(CN)_6]_3$ coated on $TiO_2$/Mmca(TM(w)), which has a whitish interference color.

Double Layer Anti-reflection Coating for Crystalline Si Solar Cell (결정질 실리콘 태양전지를 위한 이층 반사방지막 구조)

  • Park, Je Jun;Jeong, Myeong Sang;Kim, Jin Kuk;Lee, Hi-Deok;Kang, Min Gu;Song, Hee-eun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.1
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    • pp.73-79
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    • 2013
  • Crystalline silicon solar cells with $SiN_x/SiN_x$ and $SiN_x/SiO_x$ double layer anti-reflection coatings(ARC) were studied in this paper. Optimizing passivation effect and optical properties of $SiN_x$ and $SiO_x$ layer deposited by PECVD was performed prior to double layer application. When the refractive index (n) of silicon nitride was varied in range of 1.9~2.3, silicon wafer deposited with silicon nitride layer of 80 nm thickness and n= 2.2 showed the effective lifetime of $1,370{\mu}m$. Silicon nitride with n= 1.9 had the smallest extinction coefficient among these conditions. Silicon oxide layer with 110 nm thickness and n= 1.46 showed the extinction coefficient spectrum near to zero in the 300~1,100 nm region, similar to silicon nitride with n= 1.9. Thus silicon nitride with n= 1.9 and silicon oxide with n= 1.46 would be proper as the upper ARC layer with low extinction coefficient, and silicon nitride with n=2.2 as the lower layer with good passivation effect. As a result, the double layer AR coated silicon wafer showed lower surface reflection and so more light absorption, compared with $SiN_x$ single layer. With the completed solar cell with $SiN_x/SiN_x$ of n= 2.2/1.9 and $SiN_x/SiO_x$ of n= 2.2/1.46, the electrical characteristics was improved as ${\Delta}V_{oc}$= 3.7 mV, ${\Delta}_{sc}=0.11mA/cm^2$ and ${\Delta}V_{oc}$=5.2 mV, ${\Delta}J_{sc}=0.23mA/cm^2$, respectively. It led to the efficiency improvement as 0.1% and 0.23%.

Optimization of Optical Structure of Lightguide Panel for Uniformity Improvement of Edge-lit Backlight (엣지형 LED 백라이트의 균일도 향상을 위한 도광판의 광구조 최적화)

  • Lee, Jung-Ho;Nahm, Kie-Bong;Ko, Jae-Hyeon;Kim, Joong-Hyun
    • Korean Journal of Optics and Photonics
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    • v.21 no.2
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    • pp.61-68
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    • 2010
  • Optical simulation methods were applied to the edge-lit LED backlight for LCD TV applications in order to optimize the optical structure of the light guide plate(LGP), and thus to improve the uniformity properties by removing the bright spots caused by LED's. The edge-lit LED backlight consisted of three white LED's with a lamp cover, a light guide plate, and a reflection film. When there was no pattern on the entrance side surface of the LGP, the illuminance uniformity was sensitively dependent on the distance d between the LED and the entrance surface. The illuminance uniformity increased with d but its increasing rate slowed down when d was beyond ~ 1.5 mm. When micro-patterns such as a lenticular lens array (LLA) or a serration pattern were formed on the entrance surface, the illuminance uniformity was improved substantially even for the case of very small d. At the same simulation condition, the lightguide with serration pattern showed a better uniformity than that with LLA pattern. Additional improvement could be achieved by changing the refractive index of the micro-patterns. These results suggest that using micro-patterns is a very effective way to reduce the bright spots due to their refracting function for the concentrated incident rays onto the LGP.

Physicochemical Changes of Beef Loin by Different Cooking Methods (가열처리방법에 따른 쇠고기 등심의 이화학적 특성 변화)

  • Yang, Jong-Beom;Lee, Kyoung-Hae;Choi, Sung-Up
    • Food Science and Preservation
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    • v.19 no.3
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    • pp.368-375
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    • 2012
  • To decrease the intake of animal fat and cholesterol, the changes in the physicochemical characteristics of beef loin cooked through different methods (boiling, steaming, baking, and frying) were investigated. The cooking weight loss, moisture drain rate, and cholesterol drain rate were highest during frying, whereas the lipid drain rate was highest during boiling. The pH value increased markedly during steaming, the acid value of meat fat increased remarkedly during boiling, and the refractive index of meat fat increased notably upon frying. The hardness of meat was remarkedly increased by steaming. The gumminess and chewiness of meat were notably increased by frying. The springiness slightly decreased during all the cooking methods, and the cohesiveness was not significantly affected by any cooking process. The CIE $L^*$ (lightness) value increased markedly during boiling, the CIE $a^*$ (redness) value decreased markedly during both boiling and steaming, and the CIE $b^*$ (yellowness) value decreased notably during all the cooking methods. The fatty acid composition did not significantly change after cooking, except when the meat was fried. Therefore, boiling is an effective cooking method for beef loin to decrease the intake of animal fat.