• 한국산학기술학회논문지
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• 제13권5호
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• pp.2319-2324
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• 2012

본 논문에서는 가유전체 기판구조를 이용한 비대칭 브랜치 라인 커플러의 설계에 대하여 기술한다. 가유전체 기판구조에서는 주기적으로 다수의 비어홀들이 삽입되므로 등가적으로 유효유전율과 유효투자율이 증가하여, 여기에 전송선로를 구현할 경우 표준형 선로에 비하여 동일한 전기적 길이일 때 물리적 길이와 선폭이 감소하게 된다. 이런 특성을 이용하여 초고주파 회로들을 소형화하여 설계할 수 있는데, 본 논문에서는 2GHz대에서 동작하는 3:1 비대칭 브랜치 라인 커플러를 소형화하여 설계하는 것에 대하여 기술한다. 설계된 커플러는 표준형 전송선로를 이용하여 설계한 회로에 비하여 동일한 성능을 가지면서 약 53.4%의 크기를 갖는다. 비대칭 전력 분배 비율이 시뮬레이션과 측정 데이터에서 잘 일치하고 있으며, 측정된 손실도 불과 0.2dB 이내로 매우 적다.

• 한국전자파학회논문지
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• 제27권2호
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• pp.123-130
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• 2016

본 논문에서는 원격 화학 센서로 활용 가능한 플렉서블 미세유체 메타물질 흡수체를 제안한다. 제안된 흡수체는 잉크젯 프린팅 기법으로 종위 기판 위에 인쇄한 분할고리공진기(SRCR: Split Ring Cross Resonator)와 Polydimethylsiloxane(PDMS) 기판에 레이저 식각된 미세유체 채널로 구성되어 있어 매우 유연한 특징을 보인다. 본 연구에서 제안한 메타물질 흡수체는 미세유체 채널에 주입된 화학물질에 따른 실효 유전율의 변화를 공진주파수의 이동으로 감지할 수 있다. 제안된 흡수체는 시뮬레이션과 측정을 통하여 성능을 검증하였다. 측정 결과, 공기의 경우에는 10.49 GHz에서 흡수가 되었고, 에탄올과 탈이온수의 경우에는 각각 10.04 GHz와 8.9 GHz에서 흡수체로 동작함을 확인할 수 있었다.

• 한국전기전자재료학회논문지
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• 제15권9호
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• pp.783-787
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• 2002

In recent year, B $i_{4-}$x L $a_{x}$ $Ti_3$ $O_{12(BLT)}$ is one of promising substitute materials for the ferroelectric random access memory(FRAM) applications. But the systematic composition is still insufficient, so this experiment was carried out in ceramic ambient sintering process which has the very excellent ferroelectric property. Samples were prepared by a bulk and the purpose which was estimated with a suitability of thin films applications. The density of B $i_{3.75}$ L $a_{0.25}$ $Ti_3$ $O_{12}$ was high and the XRD pattern showed that the intensity of main peak (117) was increased at the argon ambient sintering. Controlling the quantity of oxygen, crystallization showed a thin, long plate like type, and we obtained the excellent dielectric and polarization properties at the argon atmosphere sintering. Also this sintering process was effective at the bulk sample. Argon ambient sintered sample produced higher permittivity of 154, the remanent polarization(2Pr) of 6.8 uC/$\textrm{cm}^2$ compared with that sintered in air and oxygen ambient. And this sintering process showed a possibility which could be applied to thin films process..

• Transactions on Electrical and Electronic Materials
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• 제16권3호
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• pp.142-145
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• 2015

In this work, open stubs were fabricated on a polyether sulfone (PES) substrate, and their basic radio frequency (RF) characteristics were investigated for application to RF matching components of a flexible monolithic microwave integrated circuit (MMIC). According to the results, an open stub employing coplanar waveguide (OSCPW) on PES exhibited much lower loss than that on silicon substrate. The OSCPW with a length of $500{\mu}m$ on PES showed capacitance values of 0.031 ~ 0.044 pF from 0.5 to 50 GHz. For application to a relatively high-value capacitive matching, an open stub employing a fishbone-type transmission line (OSFTTL) was fabricated on PES, and its characteristics were investigated. The OSFTTL showed much higher capacitance values than the OSCPW due to the high effective permittivity value. Specifically, the OSFTTL on PES showed capacitance values of 0.066 ~ 0.24 pF from 0.5 to 50 GHz, which are higher than those for the open stub on silicon substrate. The above results indicate that the OSCPW and OSFTTL on PES can be effectively used for application to low/high-value capacitive matching components on microwave and millimeter wave flexible MMIC. To the best of the authors' knowledge, this work is the first report of the investigation of RF capacitive matching components on PES substrate.

• 한국전자파학회논문지
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• 제9권3호
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• pp.296-304
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• 1998

TV파와 같은 수명편파용 광대역 전파흡수체를 설계하기 위해 평판 페라이트층 위에 핀형 페라이트를 적충한 전파흡수체를 제안하였다. 제안한 전파홉수체를 등가재료정수법을 이용하여 최적 치수를 구하고, 이 때의 전파흡수능을 기존의 흡수체의 흡수능과 비교하였다, 둥가재료정수법이라는 근사법의 타당성을 확인하기 위하여 Hashin-Strikman의 경계치를 이용한 경우의 실효유전율과 비교하였다. 나아가서, 등가재료정수법에 의한 전파흡수능과 도파관모델로 근사하여 FDTD법으로 구한 전파홉수능을 비교한 결과, 이들은 서로 잘 일치함을 확인하였다. 따라서, 제안한 단일편파용 전파흡수체는 30 MHz-5830 MHz의 광대역 특성을 가지며, 이러한 구조의 전파흡수체를 설계 또는 해석하는 데에는 등가재료정수법으로도 충분히 유효함이 입증되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.145-145
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• 2008

High-k materials have been paid much more attention for their characteristics with high permittivity to reduce the leakage current through the scaled gate oxide. Among the high-k materials, $ZrO_2$ is one of the most attractive ones combing such favorable properties as a high dielectric constant (k= 20 ~ 25), wide band gap (5 ~ 7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2$/Si structure. During the etching process, plasma etching has been widely used to define fine-line patterns, selectively remove materials over topography, planarize surfaces, and trip photoresist. About the high-k materials etching, the relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Among several etching techniques, we chose the inductively coupled plasma (ICP) for high-density plasma, easy control of ion energy and flux, low ownership and simple structure. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. During the etching process, the wafer surface temperature is an important parameter, until now, there is less study on temperature parameter. In this study, the etch mechanism of $ZrO_2$ thin film was investigated in function of $Cl_2$ addition to $BCl_3$/Ar gas mixture ratio, RF power and DC-bias power based on substrate temperature increased from $10^{\circ}C$ to $80^{\circ}C$. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by scanning emission spectroscope (SEM). The chemical state of film was investigated using energy dispersive X-ray (EDX).

• 한국전자파학회논문지
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• 제16권10호
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• pp.1050-1058
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• 2005

본 논문에서는 40 GHz 대역에서 동작하는 IEEE 802.16 고정 무선 통신 액세스를 위한 소형 저가격 및 광대역의 수신 모듈을 설계하고 구현하는 방법을 제안한다. 제안된 수신 모듈은 우수한 성능을 달성하기 위하여 캐비티 공정을 가지는 다층 LTCC 기술을 사용한다. 수신기는 저잡음 증폭기, 서브-하모닉 믹서, 내장된 이미지 제거필터와 IF 증폭기로 구성된다. 전송 손실과 모듈의 크기를 줄이기 위하여, 각 소자를 연결하기 위한 CB-CPW, 스트립 선로, 본드 와이어 및 천이(transition)들이 사용된다. LTCC는 유전율 7.1인 Dupont사의 DP-943을 사용하고 층수는 6층이며, 각 층의 높이가 100 um이다. 구현된 모듈의 크기는 $20{\times}7.5{\times}1.5\;mm^3$이며, 전체 잡음 지수는 4.8 dB 이하, 하향 변환 이득이 19.83 dB, 입력 P1 dB가 -22.8 dBm이고 이미지 제거값이 36.6 dBc 이상이다. 그리고 $560\~590\;MHz$ 대역의 디지털 TV 신호를 40 GHz 대역으로 상향 변환하여 전송시킨 후, 수신 모듈을 이용하여 시연하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.493-493
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• 2014

The manufacturing cost of thin-film photovoltics can potentially be lowered by minimizing the amount of a semiconductor material used to fabricate devices. Thin-film solar cells are typically only a few micrometers thick, whereas crystalline silicon (c-Si) wafer solar cells are $180{\sim}300\mu}m$ thick. As such, thin-film layers do not fully absorb incident light and their energy conversion efficiency is lower compared with that of c-Si wafer solar cells. Therefore, effective light trapping is required to realize commercially viable thin-film cells, particularly for indirect-band-gap semiconductors such as c-Si. An emerging method for light trapping in thin film solar cells is the use of metallic nanostructures that support surface plasmons. Plasmon-enhanced light absorption is shown to increase the cell photocurrent in many types of solar cells, specifically, in c-Si thin-film solar cells and in poly-Si thin film solar cell. By proper engineering of these structures, light can be concentrated and coupled into a thin semiconductor layer to increase light absorption. In many cases, silver (Ag) nanoparticles (NP) are formed either on the front surface or on the rear surface on the cells. In case of poly-Si thin film solar cells, Ag NPs are formed on the rear surface of the cells due to longer wavelengths are not perfectly absorbed in the active layer on the first path. In our cells, shorter wavelengths typically 300~500 nm are also not effectively absorbed. For this reason, a new concept of plasmonic nanostructure which is NPs formed both the front - and the rear - surface is worth testing. In this simulation Al NPs were located onto glass because Al has much lower parasitic absorption than other metal NPs. In case of Ag NP, it features parasitic absorption in the optical frequency range. On the other hand, Al NP, which is non-resonant metal NP, is characterized with a higher density of conduction electrons, resulting in highly negative dielectric permittivity. It makes them more suitable for the forward scattering configuration. In addition to this, Ag NP is located on the rear surface of the cell. Ag NPs showed good performance enhancement when they are located on the rear surface of our cells. In this simulation, Al NPs are located on glass and Ag NP is located on the rear Si surface. The structure for the simulation is shown in figure 1. Figure 2 shows FDTD-simulated absorption graphs of the proposed and reference structures. In the simulation, the front of the cell has Al NPs with 70 nm radius and 12.5% coverage; and the rear of the cell has Ag NPs with 157 nm in radius and 41.5% coverage. Such a structure shows better light absorption in 300~550 nm than that of the reference cell without any NPs and the structure with Ag NP on rear only. Therefore, it can be expected that enhanced light absorption of the structure with Al NP on front at 300~550 nm can contribute to the photocurrent enhancement.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.169-169
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• 2008

To keep pace with scaling trends of CMOS technologies, high-k metal oxides are to be introduced. Due to their high permittivity, high-k materials can achieve the required capacitance with stacks of higher physical thickness to reduce the leakage current through the scaled gate oxide, which make it become much more promising materials to instead of $SiO_2$. As further studying on high-k, an understanding of the relation between the etch characteristics of high-k dielectric materials and plasma properties is required for the low damaged removal process to match standard processing procedure. There are some reports on the dry etching of different high-k materials in ICP and ECR plasma with various plasma parameters, such as different gas combinations ($Cl_2$, $Cl_2/BCl_3$, $Cl_2$/Ar, $SF_6$/Ar, and $CH_4/H_2$/Ar etc). Understanding of the complex behavior of particles at surfaces requires detailed knowledge of both macroscopic and microscopic processes that take place; also certain processes depend critically on temperature and gas pressure. The choice of $BCl_3$ as the chemically active gas results from the fact that it is widely used for the etching o the materials covered by the native oxides due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. In this study, the surface reactions and the etch rate of $Al_2O_3$ films in $BCl_3/Cl_2$/Ar plasma were investigated in an inductively coupled plasma(ICP) reactor in terms of the gas mixing ratio, RF power, DC bias and chamber pressure. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by AFM and SEM. The chemical states of film was investigated using X-ray photoelectron spectroscopy (XPS), which confirmed the existence of nonvolatile etch byproducts.