• Title/Summary/Keyword: Edge-Aligned

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Effects on PCB Transmission Characteristics by SMD Pad Alignment (SMD의 패드 정렬이 PCB 전송 특성에 미치는 영향)

  • Kim, Chang-Gyun;Lee, Seongsoo
    • Journal of IKEEE
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    • v.22 no.3
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    • pp.874-877
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    • 2018
  • Many SMDs (surface mount device) are mounted and mutually connected on a PCB (printed circuit board). System performance degrades when their transmission characteristics are bad. Pads connecting a PCB and SMDs affects PCB transmission characteristics significantly, so pad should be properly aligned to optimize impedance matching. In this paper, effects on PCB transmission characteristics are simulated by pad alignment. When frequency is relatively low, pad alignment seldom affect PCB transmission characteristics, but it affects more and more when frequency or pad size becomes larger. Therefore, pad alignment should be carefully chosen based on target frequency and pad size. Especially, the proposed edge-aligned pad is generally more advantageous over the conventional centered-aligned pad in 12~16 GHz Ku-band frequency.

Simulation of the Strip Type CNT Field Emitter Triode Structure (띠 모양의 에미터를 가지는 탄소나노튜브 삼전극 전계방출 디스플레이 소자의 시뮬레이션)

  • 류성룡;이태동;김영길;변창우;박종원;고성우;천현태;고남제
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.11
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    • pp.1023-1028
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    • 2003
  • The field emission characteristics are studied by simulation for carbon nanotube triode structures with a strip-shaped emitter and a gate hole aligned with it. Two structures, one with double-edge and the other with single edge are analyzed. They show good emission characteristics. Emissions of electrons are concentrated on the edges of emitter and the emitted current increases as the distance between emitter and gate decreases. For single-edged emitter, the emitted electrons form a narow strip-shaped beam which has a good directionality. These triode structures have advantages in that they can be easily fabricated and aligned for assembly.

CMOS Clockless Wave Pipelined Adder Using Edge-Sensing Completion Detection (에지완료 검출을 이용한 클럭이 없는 CMOS 웨이브파이프라인 덧셈기 설계)

  • Ahn, Yong-Sung;Kang, Jin-Ku
    • Journal of IKEEE
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    • v.8 no.2 s.15
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    • pp.161-165
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    • 2004
  • In this paper, an 8bit wave pipelined adder using the static CMOS plus Edge-Sensing Completion Detection Logic is presented. The clockless wave-pipelining algorithm was implemented in the circuit design. The Edge-Sensing Completion Detection (ESCD) in the algorithm is consisted of edge-sensing circuits and latches. Using the algorithm, skewed data at the output of 8bit adder could be aligned. Simulation results show that the adder operates at 1GHz in $0.35{\mu}m$ CMOS technology with 3.3V supply voltage.

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Photoluminescence property of vertically aligned ZnO nanorods.

  • Das, S.N.;Kar, J.P.;Choi, J.H.;Myoung, J.M.
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.11a
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    • pp.25.2-25.2
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    • 2009
  • Vertically aligned zinc oxide(ZnO) nanorods (NRs) with different surface morphology were grown by metal organic chemical vapor deposition (MOCVD) on sapphire substrate with different deposition condition. Based on the surface morphology, ZnO nanostructures are divided into three types: nanoneedles, nanonails and nanorods with rounded tip. Variable temperature photoluminescence (PL) have employed to probe the exciton recombination in high density and vertically aligned ZnO Nanorod arrays. Low temperature photoluminescence measurements do not show any significant yellow emission, but the near band edge excitonic emission shows very strong dependence with the surface morphology. The recombination properties are expected to be different due to different surface-to-volume ratio and distribution of potential fluctuations of intrinsic defects.

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The fabrication process and optimum design of RESURF EDMOSFETs for smart power IC applications (Smart power IC용 RESURF EDMOSFETs의 제조공정과 최적설계)

  • 정훈호;권오경
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.7
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    • pp.176-184
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    • 1996
  • To overcome the drawbacks of conventional LDMOSFETs, we propose RESURF EDMOSFETs which can be adapted in varous circuit applications, be driven without charge pumping circuity and thowe threshold voltage can be adjusted. The devices have the diffused drift region formed by a high tmperature process before the gate oxidaton. After the polysilicon gate electrode formation, a fraction of the drift region around the gate edge is opened for supplemental self-aligned ion implantation to obtain self-aligned drift region. This leads to a shorter gate length and desirable drift region junction contour under the gate edge for minimum specific-on-resistance. In additon, a and maximize the breakdown voltage. Also, by biasing the metal field plate, we can reduce the specific-on-resistance further. The devices are optimized by using the TSUPREM-4 process simulator and the MEDICI device simulator. The optimized devices have the breakdwon voltage and the specific-on-resistance of 101.5V and 1.14m${\Omega}{\cdot}cm^{2}$, respectively for n-channel RESURF EDMOSFET, and 98V and 2.75m.ohm..cm$^{2}$ respectively for p-channel RESURF EDMOSFET. To check the validity of the simulations, we fabricated n-channel EDMOSFETs and confirmed the measured breakdown voltage of 97V and the specific-on-resistance of 1.28m${\Omega}{\cdot}cm^{2}$. These results are superior to those of any other reported power devices for smart power IC applications.

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A Study on the Lateral Field Effect of VA-LCDs (VA-LCD의 측면전장효과에 관한 연구)

  • Lim, Cheol-Jae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.3
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    • pp.260-264
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    • 2008
  • We analyzed the lowering of transmittance due to lateral field effect in the edge of pixel. We studied the method to solve the problem of VA-LCD. It occurred director distortion and transmittance lowering by strong lateral field in the edge of pixel. For analyzing the director distortion and improving the transmittance lowering, we applied the edge pattern to PVA-LCD of cross pattern. As a results, transmittance in the new VA modes were higher than that of conventional VA modes.

Detection of edge delamination in surface adhered active fiber composites

  • Wang, Dwo-Wen;Yin, Ching-Chung
    • Smart Structures and Systems
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    • v.5 no.6
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    • pp.633-644
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    • 2009
  • A simple method has been developed to detect the bonding condition of active fiber composites (AFC) adhered to the surface of a host structure. Large deformation actuating capability is one of important features of AFC. Edge delamination in adhesive layer due to large interfacial shear stress at the free edge is typically resulted from axial strain mismatch between bonded materials. AFC patch possesses very good flexibility and toughness. When an AFC patch is partially delaminated from host structure, there remains sensing capability in the debonded part. The debonding size can be determined through axial resonance measured by the interdigitated electrodes symmetrically aligned on opposite surfaces of the patch. The electrical impedance and modal response of the AFC patch in part adhered to an aluminum plate were investigated in a broad frequency range. Debonding ratio of the AFC patch is in inverse proportion to the resonant frequency of the fundamental mode. Feasibility of in-situ detecting the progressive delamination between AFC patch and host plate is demonstrated.

Study on Retardation Value of Fringe-Field Driven Homogeneously Aligned Nematic Liquid Crystal Cell using Liquid Crystals with Positive Dielectric Anisotropy (유전율 이방성이 양인 액정을 이용한 Fringe-Field Driven 수평 배향셀의 위상지연값 연구)

  • 정송희;김향율;송성훈;이승희
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.3
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    • pp.305-310
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    • 2004
  • We have studied the optimal phase retardation value of a homogeneously aligned liquid crystal (LC) driven by fringe-field when using the LC with positive dielectric anisotropy. In general, the transmittance of a homogeneous aligned LC cell under crossed polarizer is maximum when a twist angle of LC by in-plane rotation is 45$^{\circ}$ with polarizer and the cell retardation becomes λ/2. However, the device using the LC with positive dielectric anisotropy does not follow this since the degree of rotation of the LC is dependent on electrode position and in addition the LCs tilt up along the fringe-field. At the center of common and pixel electrode, the LC is most twisted around a middle position of a cell whereas at the edge position of pixel electrode, the LC is most twisted near bottom surface of a cell. Consequently, the optimal phase retardation of the device becomes much larger than λ/2 and the transmittance can be described using the combination of the in-plane switching and twisted nematic mode.

Growth and Characterization of Vertically Aligned ZnO nanowires with different Surface morphology

  • Das, S.N.;Choi, J.H.;Kar, J.P.;Myoung, J.M.
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.05a
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    • pp.35.1-35.1
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    • 2009
  • Vertically aligned zinc oxide (ZnO) nanorods (NRs) with different surface morphology were grown by metal organic chemical vapor deposition (MOCVD) on sapphire substrate. The films thus prepared were characterized by measuring X-ray diffraction (XRD), Scanning electron microscopy (SEM) and Transmission electron microscopy (TEM) studies. To study the effect of surface morphology on wettability, the contact angle (CA) of water was measured. It was demonstrated that the CA of the deposited ZnO NRs varied between $104^{\circ}$ and $135^{\circ}$ depending upon the surface morphology. Variable temperature photoluminescence (PL) have employed to probe the exciton recombination in high density and vertically aligned ZnO Nanorod arrays. The low-temperature PL characterizes the dominant near-band-edge excitonic emissions from such nanorod arrays.

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Kisat-A Magnetometer Observations of Birkeland Currents in the High-Latitude Region

  • Pyo, Yoo-Surn;Min, Kyoung-Wook
    • Bulletin of the Korean Space Science Society
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    • 1993.10a
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    • pp.8-8
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    • 1993
  • Field-aligned(Birkeland) currents of the High-latitude polar region are to the linkage between the solar wind-magnetosphere system and the ionosphere. The characteristics of field-aligned currents at an attitude of 1300 km have been investigated from the KiSat-A satellite magnetometer data recorded at SatRec form March to May 1993. It is found that the po1arity of both east-west and south-north magnetic components becomes reversed and distorted across the poleward edge. We suggest that these changes May occur rule to the Region 1 and Region 2 currents. It is also suggested that the current time resolution which is about 30 seconds, should be improved to prove gradual polarity changes in the polar region. In addition, it is shown how the observational results depend on the longitude in the high-latitude region.

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