• Title/Summary/Keyword: Edge Energy

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Effects of Port Shape on Steady Flow Characteristics in an SI Engine with Semi-Wedge Combustion Chamber (2) - Velocity Distribution (2) (반 쐐기형 연소실을 채택한 SI 기관에서 포트형상이 정상유동 특성에 미치는 영향 (2) - 유속분포 (2))

  • Yoon, Inkyoung;Ohm, Inyong
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.41 no.2
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    • pp.97-107
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    • 2017
  • This study is the second investigation on the steady flow characteristics of an SI engine with a semi-edge combustion chamber as a function of the port shape with varying evaluation positions. For this purpose, the planar velocity profiles were measured from 1.75B, 1.75 times of bore position apart from the bottom of head, to 6.00B positions using particle - image velocimetry. The flow patterns were examined with both a straight and a helical port. The velocity profiles, streamlines, and centers of swirl were almost the same at the same valve lift regardless of the measuring position, which is quite different from the case of the pent-roof combustion chamber. All the eccentricity values of the straight port were out of distortion criterion 0.15 through the lifts and the position. However, the values of the helical port exceeded the distortion criterion by up to 4 mm lift, but decreased rapidly above the 3.00B position and the 5 mm lift. There always existed a relative offset effect in the evaluation of the swirl coefficient using the PIV method due to the difference of the ideal impulse swirl meter velocity profile assumption, except for the cylinder-center-base estimation that was below 4 mm of the straight port. Finally, it was concluded that taking the center as an evaluation basis and the assumption about the axial velocity profile did not have any qualitative effect on swirl evaluation, but affected the value owing to the detailed profile.

Recent Research Trends of Cryopreservation Technology Based on Microalgae Chlorophyta (미세조류 동결보존 기술 개발의 최근 연구 동향)

  • Yim, Jun-Ho;Seo, Yong Bae;Kim, Seon Min;Jeon, Young Jae
    • Journal of Life Science
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    • v.31 no.10
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    • pp.960-968
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    • 2021
  • Since microalgae research started on late 18 century, they have been recognized as one of the most important bioresources used in bioindustry. Owing to the large efforts paid to industrial application of this microorganisms, their importance on food/feed and bioactive compounds has been further extending into the environmental research areas including alternative energy resources, mitigation of the carbon emission, and waste-water treatment. However, despite the importance on their industrial application, the fundamental research field related to the long-term preservation of microalgae culture has not received much attention. However, a less labor intensive and cost-efficient preservation technology enabling biologically active and stable microalgae-culture provides a key success factor in the biotechnological application. Therefore, this study investigated various cutting-edge microalgae cryopreservation technologies currently developed so far, mainly targeting Chlorophyta, which occupies the largest taxon in the classification system of microalgae. In addition, for the development of successful cryopreservation technique, the key factors such as temperature control effect and preservative effect during cryopreservation of microalgae culture were investigated. In addition, the problems with current preservation technology that is being used in Korean domestic biological resource banks and the international microalgal resource banks are described. According to our investigation, currently no standard method for long-term preservation of microalgae is available due to their various morphological and physiological characteristics. To overcome such issues, much more efforts on fundamental research area on the identification of specific biomarker used for microalgae taxonomical classification and further systemic approaches based on strain-specific cryopreservation methods needed.

High Voltage β-Ga2O3 Power Metal-Oxide-Semiconductor Field-Effect Transistors (고전압 β-산화갈륨(β-Ga2O3) 전력 MOSFETs)

  • Mun, Jae-Kyoung;Cho, Kyujun;Chang, Woojin;Lee, Hyungseok;Bae, Sungbum;Kim, Jeongjin;Sung, Hokun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.32 no.3
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    • pp.201-206
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    • 2019
  • This report constitutes the first demonstration in Korea of single-crystal lateral gallium oxide ($Ga_2O_3$) as a metal-oxide-semiconductor field-effect-transistor (MOSFET), with a breakdown voltage in excess of 480 V. A Si-doped channel layer was grown on a Fe-doped semi-insulating ${\beta}-Ga_2O_3$ (010) substrate by molecular beam epitaxy. The single-crystal substrate was grown by the edge-defined film-fed growth method and wafered to a size of $10{\times}15mm^2$. Although we fabricated several types of power devices using the same process, we only report the characterization of a finger-type MOSFET with a gate length ($L_g$) of $2{\mu}m$ and a gate-drain spacing ($L_{gd}$) of $5{\mu}m$. The MOSFET showed a favorable drain current modulation according to the gate voltage swing. A complete drain current pinch-off feature was also obtained for $V_{gs}<-6V$, and the three-terminal off-state breakdown voltage was over 482 V in a $L_{gd}=5{\mu}m$ device measured in Fluorinert ambient at $V_{gs}=-10V$. A low drain leakage current of 4.7 nA at the off-state led to a high on/off drain current ratio of approximately $5.3{\times}10^5$. These device characteristics indicate the promising potential of $Ga_2O_3$-based electrical devices for next-generation high-power device applications, such as electrical autonomous vehicles, railroads, photovoltaics, renewable energy, and industry.

Evaluation of the Usefulness of MapPHAN for the Verification of Volumetric Modulated Arc Therapy Planning (용적세기조절회전치료 치료계획 확인에 사용되는 MapPHAN의 유용성 평가)

  • Woo, Heon;Park, Jang Pil;Min, Jae Soon;Lee, Jae Hee;Yoo, Suk Hyun
    • The Journal of Korean Society for Radiation Therapy
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    • v.25 no.2
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    • pp.115-121
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    • 2013
  • Purpose: Latest linear accelerator and the introduction of new measurement equipment to the agency that the introduction of this equipment in the future, by analyzing the process of confirming the usefulness of the preparation process for applying it in the clinical causes some problems, should be helpful. Materials and Methods: All measurements TrueBEAM STX (Varian, USA) was used, and a file specific to each energy, irradiation conditions, the dose distribution was calculated using a computerized treatment planning equipment (Eclipse ver 10.0.39, Varian, USA). Measuring performance and cause errors in MapCHECK 2 were analyzed and measured against. In order to verify the performance of the MapCHECK 2, 6X, 6X-FFF, 10X, 10X-FFF, 15X field size $10{\times}10$ cm, gantry $0^{\circ}$, $180^{\circ}$ direction was measured by the energy. IGRT couch of the CT values affect the measurements in order to confirm, CT number values : -800 (Carbon) & -950 (COUCH in the air), -100 & 6X-950 in the state for FFF, 15X of the energy field sizes $10{\times}10$, gantry $180^{\circ}$, $135^{\circ}$, $275^{\circ}$ directionwas measured at, MapPHAN allocated to confirm the value of HU were compared, using the treatment planning computer for, Measurement error problem by the sharp edges MapPHAN Learn gantry direction MapPHAN of dependence was measured in three ways. GANTRY $90^{\circ}$, $270^{\circ}$ in the direction of the vertically erected settings 6X-FFF, 15X respectively, and Setting the state established as a horizontal field sizes $10{\times}10$, $90^{\circ}$, $45^{\circ}$, $315^{\circ}$, $270^{\circ}$ of in the direction of the energy-6X-FFF, 15X, respectively, were measured. Without intensity modulated beam of the third open arc were investigated. Results: Of basic performance MapCHECK confirm the attenuation measured by Couch, measured from the measured HU values that are assigned to the MAP-PHAN, check for calculation accuracy for the angled edge of the MapPHAN all come in a range of valid measurement errors do not affect the could see. three ways for the Gantry direction dependence, the first of the meter built into the value of the Gantry $270^{\circ}$ (relative $0^{\circ}$), $90^{\circ}$ (relative $180^{\circ}$), 6X-FFF, 15X from each -1.51, 0.83% and -0.63, -0.22% was not affected by the AP/PA direction represented. Setting the meter horizontally Gantry $90^{\circ}$, $270^{\circ}$ from the couch, Energy 6X-FFF 4.37, 2.84%, 15X, -9.63, -13.32% the difference. By-side direction measurements MapPHAN in value is not within the valid range can not, because that could be confirmed as gamma pass rate 3% of the value is greater than the value shown. You can check the Open Arc 6X-FFF, 15X energy, field size $10{\times}10$ cm $360^{\circ}$ rotation of the dose distribution in the state to look at nearly 90% pass rate to emerge. Conclusion: Based on the above results, the MapPHAN gantry direction dependence by side in the direction of the beam relative dose distribution suitable for measuring the gamma value, but accurate measurement of the absolute dose can not be considered is. this paper, a more accurate treatment plan in order to confirm, Reduce the tolerance for VMAT, such as lateral rotation investigation in order to measure accurate absolute isodose using a combination of IMF (Isocentric Mounting Fixture) MapCHEK 2, will be able to minimize the impact due to the angular dependence.

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Development of Position Encoding Circuit for a Multi-Anode Position Sensitive Photomultiplier Tube (다중양극 위치민감형 광전자증배관을 위한 위치검출회로 개발)

  • Kwon, Sun-Il;Hong, Seong-Jong;Ito, Mikiko;Yoon, Hyun-Suk;Lee, Geon-Song;Sim, Kwang-Souk;Rhee, June-Tak;Lee, Dong-Soo;Lee, Jae-Sung
    • Nuclear Medicine and Molecular Imaging
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    • v.42 no.6
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    • pp.469-477
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    • 2008
  • Purpose: The goal of this paper is to present the design and performance of a position encoding circuit for $16{\times}16$ array of position sensitive multi-anode photomultiplier tube for small animal PET scanners. This circuit which reduces the number of readout channels from 256 to 4 channels is based on a charge division method utilizing a resistor array. Materials and Methods: The position encoding circuit was simulated with PSpice before fabrication. The position encoding circuit reads out the signals from H9500 flat panel PMTs (Hamamatsu Photonics K.K., Japan) on which $1.5{\times}1.5{\times}7.0\;mm^3$ $L_{0.9}GSO$ ($Lu_{1.8}Gd_{0.2}SiO_{5}:Ce$) crystals were mounted. For coincidence detection, two different PET modules were used. One PET module consisted of a $29{\times}29\;L_{0.9}GSO$ crystal layer, and the other PET module two $28{\times}28$ and $29{\times}29\;L_{0.9}GSO$ crystal layers which have relative offsets by half a crystal pitch in x- and y-directions. The crystal mapping algorithm was also developed to identify crystals. Results: Each crystal was clearly visible in flood images. The crystal identification capability was enhanced further by changing the values of resistors near the edge of the resistor array. Energy resolutions of individual crystal were about 11.6%(SD 1.6). The flood images were segmented well with the proposed crystal mapping algorithm. Conclusion: The position encoding circuit resulted in a clear separation of crystals and sufficient energy resolutions with H9500 flat-panel PMT and $L_{0.9}GSO$ crystals. This circuit is good enough for use in small animal PET scanners.

Performance Measurement of Siemens Inveon PET Scanner for Small Animal Imaging (소동물 영상을 위한 Siemens Inveon PET 스캐너의 성능평가)

  • Yu, A-Ram;Kim, Jin-Su;Kim, Kyeong-Min;Lee, Young-Sub;Kim, Jong-Guk;Woo, Sang-Keun;Park, Ji-Ae;Kim, Hee-Joung;Cheon, Gi-Jeong
    • Progress in Medical Physics
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    • v.21 no.2
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    • pp.145-152
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    • 2010
  • Inveon PET is a recently developed preclinical PET system for small animal. This study was conducted to measure the performance of Inveon PET as recommended by the NEMA NU 4-2008. We measured the spatial resolution, the sensitivity, the scatter fraction and the NECR using a F-18 source. A 3.432 ns coincidence window was used. A $1\;mm^3$ sized F-18 point source was used for the measurement of spatial resolution within an energy window of 350~625 keV. PET acquisition was performed to obtain the spatial resolution from the center to the 5 cm offset toward the edge of the transverse FOV. Sensitivity, scatter fraction, and NECR were measured within an energy window of 350~750 keV. For measuring the sensitivity, a F-18 line source (length: 12.7 cm) was used with concentric 5 aluminum tubes. For the acquisition of the scatter fraction and the NECR, two NEMA scatter phantoms (rat: 50 mm in diameter, 150 mm in length; mouse: 25 mm in diameter, 70 mm in length) were used and the data for 14 half-lives (25.6 hr) was obtained using the F-18 line source (rat: 316 MBq, mouse: 206 MBq). The spatial resolution of the F-18 point source was 1.53, 1.50 and 2.33 mm in the radial, tangential and axial directions, respectively. The volumetric resolution was $5.43\;mm^3$ in the center. The absolute sensitivity was 6.61%. The peak NECR was 486 kcps @121 MBq (rat phantom), and 1056 kcps @128 MBq (mouse phantom). The values of the scatter fraction were 20.59% and 7.93% in the rat and mouse phantoms, respectively. The performances of the Inveon animal PET scanner were measured in this study. This scanner will be useful for animal imaging.

Effect of Carrier Confinement and Optical Properties of Two-dimensional Electrons in Al0.3Ga0.7N/GaN and Al0.3Ga0.7N/GaN/Al0.15Ga0.85N/GaN Heterostructures (Al0.3Ga0.7N/GaN 및 Al0.3Ga0.7N/GaN/Al0.15Ga0.85N/GaN 이종접합 구조에서 운반자 구속 효과와 이차원 전자가스의 광학적 특성)

  • Kwack, H.S.;Lee, K.S.;Cho, H.E.;Lee, J.H.;Cho, Y.H.
    • Journal of the Korean Vacuum Society
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    • v.17 no.4
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    • pp.359-364
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    • 2008
  • We have investigated optical and structural properties of $Al_{0.3}Ga_{0.7}N$/GaN and $Al_{0.3}Ga_{0.7}N/GaN/Al_{0.15}Ga_{0.85}N/GaN$ heterostructures (HSs) grown by metal-organic chemical vapor deposition, by means of Hall measurement, high-resolution X-ray diffraction, and temperature- and excitation power-dependent photoluminescence (PL) spectroscopy. A strong GaN band edge emission and its longitudinal optical phonon replicas were observed for all the samples. At 10 K, a 2DEG-related PL peak located at ${\sim}\;3.445\;eV$ was observed for $Al_{0.3}Ga_{0.7}N$/GaN HS, while two 2DEG peaks at ${\sim}\;3.42$ and ${\sim}\;3.445\;eV$ were observed for $Al_{0.3}Ga_{0.7}N/GaN/Al_{0.15}Ga_{0.85}N/GaN$ HS due to the additional $Al_{0.15}Ga_{0.85}N$ layers. Moreover, the emission intensity of the 2DEG peak was higher in $Al_{0.3}Ga_{0.7}N/GaN/Al_{0.15}Ga_{0.85}N/GaN$ HS than in $Al_{0.3}Ga_{0.7}N$/GaN HS probably due to an effective confinement of the photo-excited holes by the additional $Al_{0.15}Ga_{0.85}N$ layers. The 2DEG-related emission intensity decreased with increasing temperature and disappeared at temperatures above 150 K. To investigate the origin of the new 2DEG peaks, the energy-band structure for multiple AlGaN/GaN HSs were simulated and compared with the experimental data. As a result, the observed high- and low-energy peaks of 2DEG can be attributed to the spatially-separated 2DEG emissions formed at different AlGaN/GaN heterointerfaces.

Enhancement and Quenching Effects of Photoluminescence in Si Nanocrystals Embedded in Silicon Dioxide by Phosphorus Doping (인의 도핑으로 인한 실리콘산화물 속 실리콘나노입자의 광-발광현상 증진 및 억제)

  • Kim Joonkon;Woo H. J.;Choi H. W.;Kim G. D.;Hong W.
    • Journal of the Korean Vacuum Society
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    • v.14 no.2
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    • pp.78-83
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    • 2005
  • Nanometric crystalline silicon (no-Si) embedded in dielectric medium has been paid attention as an efficient light emitting center for more than a decade. In nc-Si, excitonic electron-hole pairs are considered to attribute to radiative recombination. However the surface defects surrounding no-Si is one of non-radiative decay paths competing with the radiative band edge transition, ultimately which makes the emission efficiency of no-Si very poor. In order to passivate those defects - dangling bonds in the $Si:SiO_2$ interface, hydrogen is usually utilized. The luminescence yield from no-Si is dramatically enhanced by defect termination. However due to relatively high mobility of hydrogen in a matrix, hydrogen-terminated no-Si may no longer sustain the enhancement effect on subsequent thermal processes. Therefore instead of easily reversible hydrogen, phosphorus was introduced by ion implantation, expecting to have the same enhancement effect and to be more resistive against succeeding thermal treatments. Samples were Prepared by 400 keV Si implantation with doses of $1\times10^{17}\;Si/cm^2$ and by multi-energy Phosphorus implantation to make relatively uniform phosphorus concentration in the region where implanted Si ions are distributed. Crystalline silicon was precipitated by annealing at $1,100^{\circ}C$ for 2 hours in Ar environment and subsequent annealing were performed for an hour in Ar at a few temperature stages up to $1,000^{\circ}C$ to show improved thermal resistance. Experimental data such as enhancement effect of PL yield, decay time, peak shift for the phosphorus implanted nc-Si are shown, and the possible mechanisms are discussed as well.

A Study on Development of Prototype Test Train Design in G7 Project for High Speed Railway Technology (G7 고속전철기술개발사업에서의 시제차량 통합 디자인 개발)

  • 정경렬;이병종;윤세균
    • Archives of design research
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    • v.16 no.4
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    • pp.185-196
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    • 2003
  • The demand for an environment-friendly transportation system, equipped with low energy consumption, and low-or zero-pollution has been on the increase since the beginning of the World Trade Organization era. Simultaneously, the consistent growth of high-speed tram technology, combined with market share, has sparked a fierce competition among technologically-advanced countries like France, Germany, and Japan in an effort to keep the lead in high-speed train technology via extensive Research and development(R&D) expenses. These countries are leaders in the race to implement the next-generation transportation system, build intercontinental rail way networks and export the high-speed train as a major industry commodity. The need to develop our own(Korean) 'high-speed train' technology and its core system technology layouts including original technology serves a few objectives: They boost the national competitive edge; they develop an environmental friendly rail road system that can cope with globalization and minimize the social and economic losses created by the growing traffic-congested delivery costs, environment pollution, and public discomforts. In turn, the 'G7 Project-Development of High Speed Railway Technology' held between 1996 and 2002 for a six-year period was focused on designing a domestic train capable of traveling at a speed of 350km/h combined and led to the actual implementation of engineering and producing the '2000 high-speed train:' This paper summarizes and introduces one of the G7 Projects-specifically, the design segment achievement within the development of train system engineering technology. It is true that the design aspect of the Korean domestic railway system program as a whole was lacking when compared with the advanced railroad countries whose early phase of train design emphasized the design aspect. However, having allowed the active participation of expert designers in the early phase of train design in the current project has led to a new era of domestic train development and the implementation of a way to meet demand flexibly with newly designed trains. The idea of a high-speed train in Korea and its design concept is well-conceived: a faster, more pleasant, and silent based Korean high-speed train that facilitates a new travel culture. A Korean-type of high-speed train is acknowledged by passengers who travel in such trains. The Korean high-speed prototype train has been born, combining aerodynamic air-cushioned design, which is the embodiment of Korean original design of forehead of power car minimized aerodynamic resistance using a curved car body profile, and the improvement of the interior design with ergonomics and the accommodation of the vestibule area through the study of passenger behavior and social culture that is based on the general passenger car.

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A COMPARATIVE STUDY ON THE PHYSICAL PROPERTIES OF ORTHODONTIC PLIERS ACCORDING TO TYPES OF STERILIZATION (멸균 방법에 따른 교정용 플라이어의 물성 변화에 대한 비교 연구)

  • Cho, Il-Je;Son, Woo-Sung
    • The korean journal of orthodontics
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    • v.28 no.2 s.67
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    • pp.329-341
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    • 1998
  • Sterilization has received much attention in orthodontic practices over the past several years. The present study was undertaken to investigate the effects of sterilization on the physical properties of orthodontic pliers-AEZ, Unitek, and Dentronix ligature cutters. This study was designed to examine the tips of ligature cutters before and after 200 and 400 sterilization cycles using the Bowmar RHT-1000, the Dentronix DDS-5000, and the Eschmann SES-2000. The tip surface and the fracture surface were observed with a scanning electron microscope. The microstructure was observed with an optical microscope. The hardness test was carried out with the mic개-Vickers hardness tester and the Rockwell C Scale hardness tester. The chemical composition was analyzed by energy dispersive X-ray spectrometer. The results of this study were as follows : 1. The number and the size of corrosion products on the tip surface and the proportion of cleavage planes in fractured specimen increased, but the hardness of the tip decreased in proportion to sterilization cycles. From these observations, it was considered that mechanical properities decreased in proportion to sterilization cycles. 2. The number and the size of chromium carbides increased in proportion to sterilization cycles. Coarse microstructure decreased mechanical properities. 3. The AEZ and Unitek ligature cutters were Fe-Cr stainless steels, but the Dentronix ligature cutter was Co-Cr alloy. There were many differences among manufactures, but the chemical composition was .not changed after sterilization cycles. 4. The tip edge of ligature cutter used in a clinic revealed microcracks with the SEM observation. Clinical experience confirmed that ligature cutters were gradually degraded by sterilization.

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