• Title/Summary/Keyword: Ecr

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ECR 플라즈마를 이용한 반도체 공정기술

  • Park, Seong-Ho;Kang, Bong-Koo
    • Electronics and Telecommunications Trends
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    • v.3 no.2
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    • pp.37-56
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    • 1988

  • ECR 플라즈마는 활성도가 크고 지향성이 강한 고에너지 빔으로서, 고속.고정밀.고 선택비의 식각공정과, 저온.저손상.고 평탄화의 증착공정, 3차원 구조에도 불순물을 원하는 깊이만큼 도우핑할 수 있는 불순물 주입공정 등에 폭넓게 응용될 수 있다.

  • https://doi.org/10.22648/ETRI.1988.J.030204 인용 PDF

Characteristics of Transparent Conductive Tin Oxide Thin Films on PET Substrate Prepared by ECR-MOCVD (PET 기판상에 ECR 화학증착법에 의해 제조된 SnO2 투명도전막의 특성)

  • Kim, Yun Seok;Jeon, Bup Ju;Ju, Jeh Beck;Sohn, Tae Won;Lee, Joong Kee
    • Korean Chemical Engineering Research
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    • v.43 no.1
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    • pp.85-91
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    • 2005

  • $SnO_2$ films were prepared at room temperature under a $(CH_3)_4Sn-H_2-O_2$ atmosphere in order to obtain transparent conductive polymer by using ECR-MOCVD (Electron Cyclotron resonance -Metal Organic Chemical Vapor Deposition) system. The electrical properties of the films were investigated as function of process parameters such as deposition time, microwave power, magnetic current power, magnet/showering/substrate distance and working pressure. An increase in microwave power and magnetic current power brought on $SnO_2$ film formation with low electric resistivity. On the other hand, the effects of process parameters described above on optical properties were insignificant in the range of our experimental scope. The transmittance and reflectance of the films prepared by the ECR-MOCVD exhibited their average values of 93-98% at wave length range of 380-780 nm and 0.1-0.5%, respectively. The grain size of the $SnO_2$ films that are also insensitive with the process parameters were in the range of 20-50 nm. On the basis of experimental data obtained in the present study, electrical resistivity of $7.5{\times}10^{-3}ohm{\cdot}cm$, transmittance of 93%, and reflectance of 0.2% can be taken as optimum values.

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