• Transactions of the Korean Society of Mechanical Engineers A
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• v.36 no.10
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• pp.1189-1193
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• 2012

The Miniaturized Fingerprint Imager (MFI) is a slim optical mouse that can be used as an input device for application to wireless portable personnel communication devices such as smartphones. In this study, we have fabricated key optical components of an MFI, including the illumination optical components and imaging lens. An LED beam-shaping lens consisting of an aspheric lens and a Fresnel facet was successfully machined using a diamond turning machine (DTM). A customized V-shaped groove for beam path banding was fabricated by the bulk micromachining of silicon that was coated with aluminum using the shadow effect in thermal evaporation. The imaging lens and arrayed multilevel Fresnel lenses were fabricated by electron beam lithography and FAB etching, respectively. The proposed optical components are extremely compact and have high optical efficiency; therefore, they are applicable to ultraslim optical systems.

• The Korean Journal of Nuclear Medicine Technology
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• v.12 no.3
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• pp.176-180
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• 2008

Department of Nuclear Medicine in Seoul National University Hospital (SNUH) had developed $^{18}F$-Flumazenil as Benzodiazepine receptor imaging agent for PET diagnosis of Epilepsy. But production Activity of $^{18}F$-Flumazenil is decreased owing to this method has difficult synthesis procedures and pretty long synthesis time. In this study, we can modify synthesizing method to have more simple procedure and less spend time and help to increase production Activity. Old method: Radioactivity was produced by cyclotron was captured by QMA cartridge that was activated. Captured radioactivity was eluted into the reaction vial by using kryptofix solution and delivered. After evaporation of eluent, the azeotrophic drying step repeated two times. tosylflumazenil in anhydrous Acetonitrile was added to a reaction vial while bubbling. The reaction mixture was evaporated until the mixture volume was 0.5 mL. Reaction vial washed with 20 % Acetonitrile and that solution went into the reaction vial. The reaction mixture was loaded to the HPLC loop by hand and purified $^{18}F$-Flumazenil by HPLC column. New method: We used $TBAHCO_3$ solution as a eluent. After the eluent was evaporated, tosylflumazenil in anhydrous acetonitrile was added to a reaction vial and the reaction mixture was bubbled for 15 minutes. It was evaporated until the mixture volume became 0.5 mL. It was loaded to the HPLC loop. In old method, $^{18}F$-Flumazenil was synthesized via 6 steps synthesis procedures in 105 minutes with 30~35% synthesizing yield (non-decay correction) and specific activity was about $0.5{\sim}2{\times}10^5$ Ci/mole. In new method, It had 3 steps synthesis procedures in 53 minutes with 40~45% synthesizing yield and specific activity was about $3{\sim}8{\times}10^5$ Ci/mole. This method leads to improve of minimizing synthesis time, increasing synthesis yield and specific activity. While we can load reaction mixture to the HPLC loop, we can expose high radiation field thanks to used by hand.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.43-49
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• 1992

RHEED apparatus which is one of the systems of surface structure analysis has been constructed.Electron beam is focused by means of magnetic lens, and the beam divergence is about $1{\times}10^{-3}$ rad. The Acceleration voltage of this RHEED apparatus is continuously variable from 0 to 20 kV. K and Cs-adsorbed structureson Si(111)$7{\times}7$ surface at room and high temperatures($200{\times}700^{\circ}C$) have been investigated by RHEED. It is observed that the K and Cs-adsorbed Si(111)surface structures at saturation coverage are Si(111)$7{\tiems}7-K$ and Si(111)$1{\tiems}1-Cs$ at room temperature, respectively. When the specimen temperature was elevated during evaporation,the $3{\times}1$ structure appears in the range of temperature between $300^{\circ}C$ and $550^{\circ}C$, and the $1{\tiems}1$ structure appears above $550^{\circ}C$ in K/Si(111)system. Also, in Cs/Si(111) system the $\sqrt{3}{\times}\sqrt{3}$ structure appears at $300^{\circ}C$, and the $\sqrt{3}{\times}\sqrt{3}+3{\times}1$ structure appears between $350^{\circ}C$ and $400^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.358-359
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• 2012

최근 분극 특성이 상이한 무분극 GaN 에피성장에 관한 심도 있는 연구와 함께 전자-전공 캐리어의 주입 및 캐리어의 거동, 방출되는 편광 특성 및 다양한 물리적 특성들에 대해 보고되고 있으며, 광학적 특성 및 물리적 특성의 확보를 위한 많은 연구가 활발히 진행 중이다 [1]. GaN의 ohmic 접촉(ohmic contact)의 형성은 발광 다이오드(light emitting diode), 레이저 다이오드(Laser), 태양전지(solar cell)와 같은 고신뢰도, 고효율 광전자 소자를 제조하기 위해서는 매우 중요하다 [2]. 그러나 이와 함께 병행 되어야 할 무분극 p-GaN 의 ohmic contact에 관한 연구는 많이 이루어지고 있지 않는 실정이다. 따라서 본 논문에서는 r-plane 사파이어 기판 상에 성장된 p-GaN에서의 ohmic 접촉 형성 연구를 위하여 Ni/Au ohmic 전극의 접촉저항 특성을 연구하였다. 본 실험에서는 성장된 a-plane GaN의 Hole농도가 $3.09{\times}1017cm3$ 인 시편을 사용하였다. E-beam evaporation 장비를 이용하여 Ni/Au를 각각 20 nm 그리고80 nm 증착 하였으며 비접촉저항을 측정하기 위해 Circle-Transfer Length Method (C-TLM) 패턴을 사용하였다. 샘플은 RTA (Rapid Thermal Annealing)를 사용하여 $300^{\circ}C$에서 $700^{\circ}C$까지 온도를 변화시키며 전기적 특성을 비교하여 그림 1(a) 나타내었다. 그림에서 알 수 있듯이 $400^{\circ}C$에서 가장 낮은 비접촉저항 값인 $6.95{\times}10-3{\Omega}cm2$를 얻을 수 있음을 발견하였다. 이 때의 I-V curve 도 그림1(b)에 나타낸 바와 같이 열처리에 의해 크게 향상됨을 알 수 있다. 그러나, $500^{\circ}C$ 이상 온도를 증가시키면 다시 비접촉 저항이 증가하는 것을 관찰하였다. XRD (x-Ray Diffraction) 분석을 통하여 $400^{\circ}C$ 이상열처리 온도가 증가하면 금속 표면에 $NiO_2$가 형성되며, 이에 따라 오믹특성이 저하 된다고 사료된다. 또한 $Ni_3N$의 존재를 확인 하였으며 이는 nonpolar surface의 특성으로 인해 nitrogen out diffusion 현상이 동시에 발생하여 계면에는 dopant로 작용하는 질소 공공을 남기고 표면에 $Ni_3N$을 형성하여 ohmic contact의 특성이 저하되기 때문인 것으로 사료된다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.134-134
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• 2011

High-k dielectric materials such as $HfO_2$, $ZrO_2$ and $Al_2O_3$ increase gate capacitance and reduce gate leakage current in MOSFET structures. This behavior suggests that high-k materials will be promise candidates to substitute as a tunnel barrier. Furthermore, stack structure of low-k and high-k tunnel barrier named variable oxide thickness (VARIOT) is more efficient.[1] In this study, we fabricated the $WSi_2$ nanocrystals nonvolatile memory device with $SiO_2/HfO_2/Al_2O_3$ tunnel layer. The $WSi_2$ nano-floating gate capacitors were fabricated on p-type Si (100) wafers. After wafer cleaning, the phosphorus in-situ doped poly-Si layer with a thickness of 100 nm was deposited on isolated active region to confine source and drain. Then, on the gate region defined by using reactive ion etching, the barrier engineered multi-stack tunnel layers of $SiO_2/HfO_2/Al_2O_3$ (2 nm/1 nm/3 nm) were deposited the gate region on Si substrate by using atomic layer deposition. To fabricate $WSi_2$ nanocrystals, the ultrathin $WSi_2$ film with a thickness of 3-4 nm was deposited on the multi-stack tunnel layer by using direct current magnetron sputtering system [2]. Subsequently, the first post annealing process was carried out at $900^{\circ}C$ for 1 min by using rapid thermal annealing system in nitrogen gas ambient. The 15-nm-thick $SiO_2$ control layer was deposited by using ultra-high vacuum magnetron sputtering. For $SiO_2$ layer density, the second post annealing process was carried out at $900^{\circ}C$ for 30 seconds by using rapid thermal annealing system in nitrogen gas ambient. The aluminum gate electrodes of 200-nm thickness were formed by thermal evaporation. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer with HP 41501A pulse generator, an Agillent 81104A 80MHz pulse/pattern generator and an Agillent E5250A low leakage switch mainframe. We will discuss the electrical properties for application next generation non-volatile memory device.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.347-347
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• 2012

Nickel Oxide (NiO) is a transition metal oxide of the rock salt structure that has a wide band gap of 3.5 eV. It has a variety of specialized applications due to its excellent chemical stability, optical, electrical and magnetic properties. In this study, we concentrated on the application of NiO thin film for transparent conducting oxide. The energy band structure, electronic and optical properties of Nickel Oxide (NiO) thin films grown on Si by using electron beam evaporation were investigated by X-Ray Photoelectron Spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and UV-Spectrometer. The band gap of NiO thin films determined by REELS spectra was 3.53 eV for the primary energies of 1.5 keV. The valence-band offset (VBO) of NiO thin films investigated by XPS was 3.88 eV and the conduction-band offset (CBO) was 1.59 eV. The UV-spectra analysis showed that the optical transmittance of the NiO thin film was 84% in the visible light region within an error of ${\pm}1%$ and the optical band gap for indirect band gap was 3.53 eV which is well agreement with estimated by REELS. The dielectric function was determined using the REELS spectra in conjunction with the Quantitative Analysis of Electron Energy Loss Spectra (QUEELS)-${\varepsilon}({\kappa},{\omega})$-REELS software. The Energy Loss Function (ELF) appeared at 4.8, 8.2, 22.5, 38.6, and 67.0 eV. The results are in good agreement with the previous study [1]. The transmission coefficient of NiO thin films calculated by QUEELS-REELS was 85% in the visible region, we confirmed that the optical transmittance values obtained with UV-Spectrometer is the same as that of estimated from QUEELS-${\varepsilon}({\kappa},{\omega})$-REELS within uncertainty. The inelastic mean free path (IMFP) estimated from QUEELS-${\varepsilon}({\kappa},{\omega})$-REELS is consistent with the IMFP values determined by the Tanuma-Powell Penn (TPP2M) formula [2]. Our results showed that the IMFP of NiO thin films was increased with increasing primary energies. The quantitative analysis of REELS provides us with a straightforward way to determine the electronic and optical properties of transparent thin film materials.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.312-312
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• 2012

Magnesium oxide has become focus for research activities due to its use in magnetic tunnel junctions and for understanding of do ferromagnetism. Theoretical investigations on such type of system indicate that the presence of defects greater than a threshold value is responsible for the magnetic behaviour. It has also been shown experimentally that by decreasing the film thickness and size of nanoparticles, enhancement/increase in magnetization can be achieved. Apart from the change in dimension, swift heavy ions (SHI) are well known for creating defects and modifying the properties of the materials. In the present work, we have studied the irradiation induced effects in magnesium oxide thin film deposited on quartz substrate via X-ray absorption spectroscopy (XAS). Magnesium oxide thin films of thickness 50nm were deposited on quartz substrate by using e-beam evaporation method. These films were irradiated by 200 MeV Ag15+ ion beam at fluence of $1{\times}10^{11}$, $5{\times}10^{11}$, $1{\times}10^{12}$, $3{\times}10^{12}$ and $5{\times}10^{12}ions/cm^2$ at Nuclear Science Centre, IUAC, New Delhi (India). The grain size was observed (as studied by AFM) to be decreased from 37 nm (pristine film) to 23 nm ($1{\times}10^{12}ions/cm^2$) and thereafter it increases upto a fluence of $5{\times}10^{12}ions/cm^2$. The electronic structure of the system has been investigated by X-ray absorption spectroscopy (XAS) measurements performed at the high energy spherical grating monochromator 20A1 XAS (HSGM) beamline in the National Synchrotron Radiation Research Center (NSRRC), Taiwan. Oxides of light elements like MgO/ZnO possess many unique physical properties with potentials for novel application in various fields. These irradiated thin films are also studied with different polarization (left and right circularly polarized) of incident x-ray beam at 05B3 EPU- Soft x-ray scattering beamline of NSRRC. The detailed analysis of observed results in the wake of existing theories is discussed.

• Membrane Journal
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• v.28 no.3
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• pp.187-195
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• 2018

In this work, the morphology of polyvinylidene-co-hexafluoropropylene (PVDF-co-HFP) membranes were systemically investigated using phase inversion technique, to target membrane contactor applications. As the presence of macrovoids degrade the mechanical integrity of the membranes and jeopardize the long-term stability of membrane contactor processes (e.g. wetting), a wide range of dope compositions and casting conditions was studied to eliminate the undesired macrovoids. The type of solvent had significant effect on the membrane morphology, and the observed morphology were correlated to the physical properties of the solvent and solvent-polymer interactions. In addition, to fabricate macrovoid-free structure, the effects of different coagulation temperatures, inclusion of additives, and addition of nonsolvents were investigated. Due to the slow crystallization rate of P(VDF-co-HFP) polymer, it was found that obtaining porous membrane without macrovoids is difficult using only nonsolvent-induced phase separation method (NIPS). However, combined other phase inversion methods such as evaporation-induced phase separation (EIPS) and vapor-induced phase separation (VIPS), the desired membrane morphology can be obtained without any macrovoids.

• Journal of Animal Science and Technology
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• v.45 no.1
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• pp.87-100
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• 2003

This study was conducted in order to determine a proper level of molasses addition through the analysis of changes in appearance, nutritive and silage parameters before and after ensiling or deepstacking of broiler litter, to evaluate the effect of pelleting processed broiler litter and to develop methods to enhance palatability of broiler litter and reduce the adjustment period by ‘Hanwoo’ steers. Molasses addition was effective in ensiling and deepstacking of broiler litter and the proper addition level was about 5%. Changes in nutritive values of broiler litter by ensiling and deepstacking with or without molasses treatment were not great. Adding 5% molasses at deepstacking of broiler litter did not affect(P<0.05) in vitro digestion of dry matter and organic matter. Pelleting of broiler litter resulted in significant(P<0.05) moisture evaporation, organic matter reduction and nearly threefold increase of bulk density. Pelleting or molasses addition of broiler litter improved palatability by ‘Hanwoo’ steers and reduced the adjustment period by half(8-9 d).

• Journal of Powder Materials
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• v.24 no.2
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• pp.133-140
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• 2017

This study investigates the oxidation properties of Fe-14Cr ferritic oxide-dispersion-strengthened (ODS) steel at various high temperatures (900, 1000, and $1100^{\circ}C$ for 24 h). The initial microstructure shows that no clear structural change occurs even under high-temperature heat treatment, and the average measured grain size is 0.4 and $1.1{\mu}m$ for the as-fabricated and heat-treated specimens, respectively. Y-Ti-O nanoclusters 10-50 nm in size are observed. High-temperature oxidation results show that the weight increases by 0.27 and $0.29mg/cm^2$ for the as-fabricated and heat-treated ($900^{\circ}C$) specimens, and by 0.47 and $0.50mg/cm^2$ for the as-fabricated and heat-treated ($1000^{\circ}C$) specimens, respectively. Further, after 24 h oxidation tests, the weight increases by 56.50 and $100.60mg/cm^2$ for the as-fabricated and heat-treated ($1100^{\circ}C$) specimens, respectively; the latter increase is approximately 100 times higher than that at $1000^{\circ}C$. Observation of the surface after the oxidation test shows that $Cr_2O_3$ is the main oxide on a specimen tested at $1000^{\circ}C$, whereas $Fe_2O_3$ and $Fe_3O_4$ phases also form on a specimen tested at $1100^{\circ}C$, where the weight increases rapidly. The high-temperature oxidation behavior of Fe-14Cr ODS steel is confirmed to be dominated by changes in the $Cr_2O_3$ layer and generation of Fe-based oxides through evaporation.