• Journal of the Semiconductor & Display Technology
• /
• v.21 no.4
• /
• pp.6-13
• /
• 2022

The electrostatic phenomenon seriously issued in extreme ultraviolet semiconductor cleaning was studied in junction with molecular dynamic aspect. It was understood that two lone pairs of electrons in water molecule were subtly different each other in molecular orbital symmetry, existed as two states of large energy difference, and became basis for water clustering through hydron bonds. It was deduced that when hydrogen bond formed by lone pair of higher energy state was broken, two types of [H₂O]⁺ and [H₂O]^- ions would be instantaneously generated, or that lone pair of higher energy state experiencing reactions such as friction with Teflon surface could cause electrostatic generation. It was specifically observed that, in case of electrolyzed cathode water, negative electrostatic charges by electrons were overlapped with negative oxidation reduction potentials without mutual reaction. Therefore, it seemed that negative electrostatic development could be minimized in cathode water by mutual repulsion of electrons and [OH]^- ions, which would be providing excellences on extreme ultraviolet cleaning and electrostatic control as well.

• The Bulletin of The Korean Astronomical Society
• /
• v.31 no.1
• /
• pp.28.2-28.2
• /
• 2006

• Bulletin of the Korean Space Science Society
• /
• 2000.04a
• /
• pp.18-18
• /
• 2000

• The Bulletin of The Korean Astronomical Society
• /
• v.28 no.2
• /
• pp.82-82
• /
• 2003

• Photonics industry news
• /
• s.15
• /
• pp.40-45
• /
• 2003

• 전기의세계
• /
• v.51 no.2
• /
• pp.29-33
• /
• 2002

• 전기의세계
• /
• v.51 no.2
• /
• pp.34-43
• /
• 2002

• The Bulletin of The Korean Astronomical Society
• /
• v.40 no.1
• /
• pp.66.2-66.2
• /
• 2015

In today's age when telecommunications using satellite has become part of our daily lives, one has to be employ preventive measures to avert any possible danger, of which solar activity is the major cause. Coronal mass ejections (CMEs) heading towards the Earth can lead to disturbances in the Earth's magnetosphere, if their magnetic field is oriented southward. Monitoring of solar filaments in this case becomes very very crucial, as their eruption is associated with most of the CMEs. Monitoring of solar filaments in this case becomes very very crucial, as their eruption is associated with most of the CMEs. Also, filaments show activation up to a few hours prior to launch of a CME and thus can provide advance warning. In this study, we present an algorithm for the detection of solar filaments seen in the extreme ultraviolet (EUV) from Atmospheric Imaging Assembly (AIA) on board the Solar Dynamics Observatory (SDO). Various morphological operations are employed to identify and extract the filaments. These filaments are then tracked in order to determine their size and location continuously.

• Journal of the Korean Vacuum Society
• /
• v.12 no.S1
• /
• pp.40-45
• /
• 2003

Ru interfacial layer was inserted into Mo-on-Si interface to enhance the extreme ultra-violet (EUV) reflective multilayer properties. The stacking status and optical properties are analyzed using cross-sectional transmission electron microscope (TEM), and reflectometer. About 1.5% of maximum reflectivity can be acquired as predicted in optical simulation, which is thought to be originated from the diffusion inhibition property. Phase defect correctability of the multilayer can be enhanced by the insertion of Ru barrier layer.

• Ceramist
• /
• v.22 no.4
• /
• pp.429-451
• /
• 2019

Quartz glass is a key material for making semiconductor process components because of its purity, low thermal expansion, high UV transmittance and relatively low cost. Domestic quartz glass has a market worth about 500 billion won in 2018, and the market power of Japanese materials is very high. Quartz glass for semiconductor process can be divided into general process and exposure. For general process, molten quartz glass is mainly used, but synthetic quartz glass with higher purity is preferred. Synthetic quartz glass is used as the photomask for the exposure process. Recently, as semiconductors started the sub-nm process, the transition from the transmission type using ArF ultraviolet (194 nm) to the reflection type using EUV ultraviolet (13.5 nm) began. Therefore, the characteristics required for the synthetic quartz glass substrates used so far are also rapidly changing. This article summarizes the current technical trends of quartz glass and recent technical issues. Lastly, the present situation and development possibility of quartz glass technology in Korea were diagnosed.